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Match Document Document Title
7368402 Systems and methods for forming tantalum oxide layers and tantalum precursor compounds  
A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum...
7354872 Hi-K dielectric layer deposition methods  
Methods of forming a high dielectric constant dielectric layer are disclosed including providing a process chamber including a holder for supporting a substrate, introducing a first gas comprising...
7309889 Constructions comprising perovskite-type dielectric  
The invention includes a capacitor construction. A capacitor electrode has a perovskite-type dielectric material thereover. The perovskite-type dielectric material has an edge region proximate the...
7217617 Methods of forming a capacitor  
A method of forming a capacitor having a capacitor dielectric layer comprising ABO 3 , where “A” is selected from the group consisting of Group IIA and Group IVB metal elements and mixtures...
7208198 Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer  
The invention includes a chemical vapor deposition method of forming a barium strontium titanate comprising dielectric layer having a varied concentration of barium and strontium, and/or titanium,...
7192889 Methods for forming a high dielectric film  
A method of forming a high dielectric oxide film conventionally formed using a post formation oxygen anneal to reduce the leakage current of such film includes forming a high dielectric oxide film...
7166885 Semiconductor devices  
The invention includes semiconductor devices. In one implementation, semiconductor device includes a first conductive material. A first layer of a dielectric material is over the first conductive...
7101594 Methods of forming capacitor constructions  
The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen...
7052584 Method of forming a capacitor  
A method of forming a capacitor having a capacitor dielectric layer comprising ABO 3 , where “A” is selected from the group consisting of Sn and Group IIA metal elements and mixtures thereof,...
7030042 Systems and methods for forming tantalum oxide layers and tantalum precursor compounds  
A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum...
7011978 Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions  
The invention includes a capacitor construction. A capacitor electrode has a perovskite-type dielectric material thereover. The perovskite-type dielectric material has an edge region proximate the...
7005695 Integrated circuitry including a capacitor with an amorphous and a crystalline high K capacitor dielectric region  
The invention comprises integrated circuitry and to methods of forming capacitors. In one implementation, integrated circuitry includes a capacitor having a first capacitor electrode, a second...
6995419 Semiconductor constructions having crystalline dielectric layers  
The invention includes semiconductor constructions. In one implementation, semiconductor construction includes a first conductive material. A first layer of a dielectric material is over the first...
6982103 Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer  
The invention a chemical vapor deposition method of forming a barium strontium titanate comprising dielectric layer having a varied concentration of barium and strontium, and/or titanium, within...
6962824 Method for controlling deposition of dielectric films  
A method for controlling stoichiometry of dielectric films, e.g., BST films, preferably formed at low deposition temperatures. A deposition process may use an adjustment in oxidizer flow and/or...
6958267 Methods of forming perovskite-type dielectric materials with chemical vapor deposition  
The invention includes a capacitor construction. A capacitor electrode has a perovskite-type dielectric material thereover. The perovskite-type dielectric material has an edge region proximate the...
6953721 Methods of forming a capacitor with an amorphous and a crystalline high K capacitor dielectric region  
The invention comprises integrated circuitry and to methods of forming capacitors. In one implementation, integrated circuitry includes a capacitor having a first capacitor electrode, a second...
6943392 Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen  
The invention comprises capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen. In one embodiment, a capacitor includes first...
6927179 Methods and apparatus for forming a high dielectric film and the dielectric film formed thereby  
A method of forming a high dielectric oxide film conventionally formed using a post formation oxygen anneal to reduce the leakage current of such film includes forming a high dielectric oxide film...
6896969 Oxidative conditioning compositions for metal oxide layer and applications thereof  
A metal oxide layer may made more highly oxidized by exposing the layer to sulfur trioxide. The leakage current of the layer may thereby be decreased, providing a capacitor containing such a layer...
6891217 Capacitor with discrete dielectric material  
The invention includes methods of forming capacitors and capacitor constructions. In one implementation, a method of forming a capacitor includes forming a first capacitor electrode. A first layer...
6888188 Capacitor constructions comprising perovskite-type dielectric materials and having different degrees of crystallinity within the perovskite-type dielectric materials  
The invention includes a capacitor construction. A capacitor electrode has a perovskite-type dielectric material thereover. The perovskite-type dielectric material has an edge region proximate the...
6887579 Oxidative conditioning compositions for metal oxide layer and applications thereof  
A metal oxide layer may made more highly oxidized by exposing the layer to sulfur trioxide. The leakage current of the layer may thereby be decreased, providing a capacitor containing such a layer...
6884475 Chemical vapor deposition method for depositing a high k dielectric film  
The invention includes chemical vapor deposition and physical vapor deposition methods of forming high k ABO 3 comprising dielectric layers on a substrate, where “A” is selected from the group...
6838293 Method for controlling deposition of dielectric films  
A method for controlling stoichiometry of dielectric films, e.g., BST films, preferably formed at low deposition temperatures. A deposition process may use an adjustment in oxidizer flow and/or...
6797560 Method of manufacturing a capacitor having tantalum oxide film as an insulating film  
A tantalum oxide film is formed on a lower conductive film by vapor-deposition, and then is treated with active oxygen species. The treated film is annealed at a temperature lower than the...
6784049 Method for forming refractory metal oxide layers with tetramethyldisiloxane  
A method of forming (and apparatus for forming) refractory metal oxide layers, such as tantalum pentoxide layers, on substrates by using vapor deposition processes with refractory metal precursor...
6773981 Methods of forming capacitors  
Capacitors and methods of forming capacitors are disclosed. In one implementation, a capacitor comprises a capacitor dielectric layer comprising Ta 2 O 5 formed over a first capacitor electrode. A...
6770525 Method of fabricating capacitors for semiconductor devices  
Disclosed is a method for fabricating capacitors for semiconductor devices. This method includes the steps of forming a lower electrode on an understructure of a semiconductor substrate, depositing...
6764956 Methods of treating dielectric materials  
The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen...
6730559 Capacitors and methods of forming capacitors  
The invention includes methods of forming capacitors and capacitor constructions. In one implementation, a method of forming a capacitor includes forming a first capacitor electrode. A first layer...
6720272 Methods of forming capacitor constructions  
The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen...
6699530 Method for constructing a film on a semiconductor wafer  
The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of...
6683005 Method of forming capacitor constructions  
The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen...
6627508 Method of forming capacitors containing tantalum  
The invention pertains to semiconductor circuit components and capacitors, and to methods of forming capacitors and semiconductor circuit components. In one aspect, the invention includes a method...
6613702 Methods of forming capacitor constructions  
The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen...
6605521 Method of forming an oxide film on a gate side wall of a gate structure  
In order to prevent abnormal oxidation of the side wall of a polycide gate conductor layer in the oxidation heat treatment process after the RIE processing of the polycide gate conductor layer in a...
6573199 Methods of treating dielectric materials with oxygen, and methods of forming capacitor constructions  
The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen...
6566147 Method for controlling deposition of dielectric films  
A method for controlling stoichiometry of dielectric films, e.g., BST films, preferably formed at low deposition temperatures. A deposition process may use an adjustment in oxidizer flow and/or...
6432793 Oxidative conditioning method for metal oxide layer and applications thereof  
A metal oxide layer may made more highly oxidized by exposing the layer to sulfur trioxide. The leakage current of the layer may thereby be decreased, providing a capacitor containing such a layer...
6426308 Methods for forming films having high dielectric constants  
A method form forming a dielectric film on a substrate includes the steps of placing the substrate in a process chamber wherein said substrate is isolated from an external environment, depositing...
6407452 Integrated circuitry and method of restricting diffusion from one material to another  
The invention includes methods of restricting diffusion between materials. First and second different materials which are separated by a barrier layer capable of restricting diffusion of material...
6400552 Capacitor with conductively doped Si-Ge alloy electrode  
Capacitors and methods of forming capacitors are disclosed. In one implementation, a capacitor includes a capacitor dielectric layer including Ta 2 O 5 formed over a first capacitor electrode. A...
6391802 Method of manufacturing an integrated capacitor onto a silicon substrate  
Method of manufacturing a capacitor integrated onto a silicon substrate, comprising a step of depositing a layer of first electrode, a step of depositing a layer of a dielectric material, a step of...
EP1195799A1 High pressure process for the formation of crystallized ceramic films at low temperatures  
A process is disclosed for forming crystallized ceramic films at low temperatures by providing a higher pressure under which the formation of crystallized ceramic films from the amorphous or...
6329237 Method of manufacturing a capacitor in a semiconductor device using a high dielectric tantalum oxide or barium strontium titanate material that is treated in an ozone plasma  
There is disclosed a method of making a high dielectric capacitor of a semiconductor device using Ta 2 O 5 , BST((Ba 1 -x Sr x )TiO 3 ) etc. of a high dielectric characteristic as a capacitor...
6325017 Apparatus for forming a high dielectric film  
An apparatus for forming a high dielectric oxide film includes a controllable atomic oxygen source and a vaporized precursor source. A deposition chamber for receiving the atomic oxygen from the...
6320238 Gate structure for integrated circuit fabrication  
The present invention relates to a gate stack structure having a dielectric material layer disposed on a substrate with a gate electrode disposed thereon. In an exemplary embodiment, the dielectric...
6282080 Semiconductor circuit components and capacitors  
The invention pertains to semiconductor circuit components and capacitors. In another aspect, the invention includes a capacitor including: a) a first capacitor plate; b) a first...
6255186 Methods of forming integrated circuitry and capacitors having a capacitor electrode having a base and a pair of walls projecting upwardly therefrom  
In accordance with one implementation the invention, a capacitor comprises two conductive capacitor electrodes separated by a capacitor dielectric layer, with at least one of the capacitor...
Matches 1 - 50 out of 67 1 2 >