Matches 1 - 45 out of 45
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7433237 Memory utilizing oxide nanolaminates  
One transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A gate is separated from the channel region by a gate insulator. The...
7369435 Write once read only memory employing floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7348237 NOR flash memory cell with high storage density  
Structures and methods for NOR flash memory cells, arrays and systems are provided. The NOR flash memory cell includes a vertical floating gate transistor extending outwardly from a substrate. The...
7257022 Nanocrystal write once read only memory for archival storage  
Structures and methods for write once read only memory employing charge trapping are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor...
7221586 Memory utilizing oxide nanolaminates  
Structures, systems and methods for transistors utilizing oxide nanolaminates are provided. One transistor embodiment includes a first source/drain region, a second source/drain region, and a...
7221017 Memory utilizing oxide-conductor nanolaminates  
Structures, systems and methods for floating gate transistors utilizing oxide-conductor nanolaminates are provided. One floating gate transistor embodiment includes a first source/drain region, a...
7193893 Write once read only memory employing floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7166509 Write once read only memory with large work function floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7154778 Nanocrystal write once read only memory for archival storage  
Structures and methods for write once read only memory employing charge trapping are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor...
7133315 Write once read only memory employing charge trapping in insulators  
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect...
7130220 Write once read only memory employing floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7113429 Nor flash memory cell with high storage density  
Structures and methods for NOR flash memory cells, arrays and systems are provided. The NOR flash memory cell includes a vertical floating gate transistor extending outwardly from a substrate. The...
7112494 Write once read only memory employing charge trapping in insulators  
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect...
7110299 Transistor with nanocrystalline silicon gate structure  
A memory is described which has memory cells that store data using hot electron injection. The data is erased through electron tunneling. The memory cells are described as floating gate transistors...
6996009 NOR flash memory cell with high storage density  
Structures and methods for NOR flash memory cells, arrays and systems are provided. The NOR flash memory cell includes a vertical floating gate transistor extending outwardly from a substrate. The...
6912158 Transistor with nanocrystalline silicon gate structure  
A memory is described which has memory cells that store data using hot electron injection. The data is erased through electron tunneling. The memory cells are described as floating gate transistors...
6888739 Nanocrystal write once read only memory for archival storage  
Structures and methods for write once read only memory employing charge trapping are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor...
6804136 Write once read only memory employing charge trapping in insulators  
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect...
6661720 Leakage detection in programming algorithm for a flash memory device  
Leakage detection in a programming algorithm for a flash memory device. According to one embodiment of the present invention a method includes programming a first flash cell in an array of flash...
6650585 Leakage detection in programming algorithm for a flash memory device  
Leakage detection in a programming algorithm for a flash memory device. According to one embodiment of the present invention a method includes programming a first flash cell in an array of flash...
EP0842514B1 FLASH MEMORY SYSTEM HAVING REDUCED DISTURB AND METHOD  
Abstract not available for EP0842514 Abstract of corresponding document: US5617350 A flash memory system having a reduced tendency to have its erased cells disturbed during read operations. An...
6584019 Leakage detection in flash memory cell  
Leakage detection for cells in a flash memory device. According to one embodiment of the present invention a method includes reading a flash cell in a read cycle in a flash memory device to...
6574144 Flash memory with nanocrystalline silicon film coating gate  
A memory is described which has memory cells that store data using hot electron injection. The data is erased through electron tunneling. The memory cells are described as floating gate transistors...
6545314 Memory using insulator traps  
A memory cell provides point defect trap sites in an insulator for storing data charges. Single electrons are stored on respective point defect trap sites and a resulting parameter, such as...
6493270 Leakage detection in programming algorithm for a flash memory device  
Leakage detection in a programming algorithm for a flash memory device. According to one embodiment of the present invention a method includes programming a first flash cell in an array of flash...
6407424 Flash memory with nanocrystalline silicon film floating gate  
A memory is described which has memory cells that store data using hot electron injection. The data is erased through electron tunneling. The memory cells are described as floating gate transistors...
6351411 Memory using insulator traps  
A memory cell provides point defect trap sites in an insulator for storing data charges. Single electrons are stored on respective point defect trap sites and a resulting parameter, such as...
6300193 Flash memory with nanocrystalline silicon film floating gate  
A memory is described which has memory cells that store data using hot electron injection. The data is erased through electron tunneling. The memory cells are described as floating gate transistors...
6282122 Evaluation of memory cell characteristics  
Techniques are used to evaluate margin of programmable memory cells. In particular, techniques are used to measure negative erased threshold voltage levels. Techniques are used to increase the...
6246606 Memory using insulator traps  
A memory cell provides point defect trap sites in an insulator for storing data charges. Single electrons are stored on respective point defect trap sites and a resulting parameter, such as...
6232643 Memory using insulator traps  
A memory cell provides point defect trap sites in an insulator for storing data charges. Single electrons are stored on respective point defect trap sites and a resulting parameter, such as...
6166401 Flash memory with microcrystalline silicon carbide film floating gate  
A memory is described which has memory cells that store data using hot electron injection. The data is erased through electron tunneling. The memory cells are described as floating gate transistors...
6141256 Differential flash memory cell and method for programming same  
A flash memory cell. The flash memory cell includes first and second transistors. The first transistor has a control gate coupled to a word line, a drain coupled to a data line and a floating gate....
6140181 Memory using insulator traps  
A memory cell provides point defect trap sites in an insulator for storing data charges. Single electrons are stored on respective point defect trap sites and a resulting parameter, such as...
6108241 Leakage detection in flash memory cell  
Leakage detection for cells in a flash memory device. According to one embodiment of the present invention a method includes reading a flash cell in a read cycle in a flash memory device to...
6031763 Evaluation of memory cell characteristics  
Techniques are used to evaluate margin of programmable memory cells. In particular, techniques are used to measure negative erased threshold voltage levels. Techniques are used to increase the...
6009018 Differential flash memory cell and method for programming same  
A flash memory cell. The flash memory cell includes first and second transistors. The first transistor has a control gate coupled to a word line, a drain coupled to a data line and a floating gate....
5989958 Flash memory with microcrystalline silicon carbide film floating gate  
A memory is described which has memory cells that store data using hot electron injection. The data is erased through electron tunneling. The memory cells are described as floating gate transistors...
5959896 Multi-state flash memory cell and method for programming single electron differences  
A flash memory cell. The cell includes a transistor with a floating gate that is formed from a number of crystals of semiconductor material. The crystals are disposed in the gate oxide of the...
5959891 Evaluation of memory cell characteristics  
Techniques are used to evaluate margin of programmable memory cells. In particular, techniques are used to measure negative erased threshold voltage levels. Techniques are used to increase the...
5852306 Flash memory with nanocrystalline silicon film floating gate  
A memory is described which has memory cells that store data using hot electron injection. The data is erased through electron tunneling. The memory cells are described as floating gate transistors...
5801401 Flash memory with microcrystalline silicon carbide film floating gate  
A memory is described which has memory cells that store data using hot electron injection. The data is erased through electron tunneling. The memory cells are described as floating gate transistors...
5754477 Differential flash memory cell and method for programming  
A flash memory cell. The flash memory cell includes first and second transistors. The first transistor has a control gate coupled to a word line, a drain coupled to a data line and a floating gate....
5740104 Multi-state flash memory cell and method for programming single electron differences  
A flash memory cell. The cell includes a transistor with a floating gate that is formed from a number of crystals of semiconductor material. The crystals are disposed in the gate oxide of the...
5617350 Flash memory system having reduced disturb and method  
A flash memory system having a reduced tendency to have its erased cells disturbed during read operations. An array of flash memory cells are arranged into a multiplicity of rows and columns, with...
Matches 1 - 45 out of 45