Matches 1 - 25 out of 25
Match Document Document Title
7433237 Memory utilizing oxide nanolaminates  
One transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A gate is separated from the channel region by a gate insulator. The...
7429515 Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics  
A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO 2 gate oxides are provided. Gate oxides formed from...
7369435 Write once read only memory employing floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7348237 NOR flash memory cell with high storage density  
Structures and methods for NOR flash memory cells, arrays and systems are provided. The NOR flash memory cell includes a vertical floating gate transistor extending outwardly from a substrate. The...
7257022 Nanocrystal write once read only memory for archival storage  
Structures and methods for write once read only memory employing charge trapping are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor...
7221586 Memory utilizing oxide nanolaminates  
Structures, systems and methods for transistors utilizing oxide nanolaminates are provided. One transistor embodiment includes a first source/drain region, a second source/drain region, and a...
7193893 Write once read only memory employing floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7177135 On-chip bypass capacitor and method of manufacturing the same  
An on-chip bypass capacitor and method of manufacturing the same, the on-chip bypass capacitor including at least two capacitor arrays, each capacitor array including a first layer connecting the...
7166509 Write once read only memory with large work function floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7154778 Nanocrystal write once read only memory for archival storage  
Structures and methods for write once read only memory employing charge trapping are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor...
7154140 Write once read only memory with large work function floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7133315 Write once read only memory employing charge trapping in insulators  
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect...
7130220 Write once read only memory employing floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7113429 Nor flash memory cell with high storage density  
Structures and methods for NOR flash memory cells, arrays and systems are provided. The NOR flash memory cell includes a vertical floating gate transistor extending outwardly from a substrate. The...
7112494 Write once read only memory employing charge trapping in insulators  
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect...
6996009 NOR flash memory cell with high storage density  
Structures and methods for NOR flash memory cells, arrays and systems are provided. The NOR flash memory cell includes a vertical floating gate transistor extending outwardly from a substrate. The...
6970370 Ferroelectric write once read only memory for archival storage  
Structures and methods for ferroelectric write once read only memory adapted to be programmed for long retention archival storage are provided. The write once read only memory cell includes a...
6952362 Ferroelectric write once read only memory for archival storage  
Structures and methods for ferroelectric write once read only memory adapted to be programmed for long retention archival storage are provided. The write once read only memory cell includes a...
6925001 Electrically programmable resistance cross point memory sensing method  
A method of reading a selected resistive memory bit having its output connected to a bitline, which is connected to a plurality of unselected electrically parallel resistive memory bits, is...
6888739 Nanocrystal write once read only memory for archival storage  
Structures and methods for write once read only memory employing charge trapping are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor...
6858905 Methods of manufacturing low cross-talk electrically programmable resistance cross point memory structures  
Low cross talk resistive cross point memory devices are provided, along with methods of manufacture and use. The memory device comprises a bit formed using a perovskite material interposed at a...
6804136 Write once read only memory employing charge trapping in insulators  
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect...
6693821 Low cross-talk electrically programmable resistance cross point memory  
Low cross talk resistive cross point memory devices are provided, along with methods of manufacture and use. The memory device comprises a bit formed using a perovskite material interposed at a...
6459137 Method for constructing ferroelectric capacitors on integrated circuit substrates  
A ferroelectric capacitor and method for making the same are disclosed. The ferroelectric capacitor may be constructed on a silicon substrate such as SiO 2 or Si 3 N 4 . The ferroelectric...
5872739 Sense amplifier for low read-voltage memory cells  
A sense amplifier for comparing the resistance of a reference cell connected to a reference bit line to the resistance of a data cell connected to a data bit line. The amplifier includes a first...
Matches 1 - 25 out of 25