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7369435 Write once read only memory employing floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7365369 Nitride semiconductor device  
A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride...
7348237 NOR flash memory cell with high storage density  
Structures and methods for NOR flash memory cells, arrays and systems are provided. The NOR flash memory cell includes a vertical floating gate transistor extending outwardly from a substrate. The...
7345310 Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof  
A bipolar junction transistor (BJT) includes a silicon carbide (SiC) collector layer of first conductivity type, an epitaxial silicon carbide base layer of second conductivity type on the silicon...
7312474 Group III nitride based superlattice structures  
A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well...
EP1806787A1 Silicon carbide bipolar transistor and method of fabricating thereof  
A bipolar junction transistor (BJT) includes a silicon carbide (SiC) collector layer (316) of first conductivity type, as epitaxial silicon carbide base layer (320) of second conductivity type on...
7221017 Memory utilizing oxide-conductor nanolaminates  
Structures, systems and methods for floating gate transistors utilizing oxide-conductor nanolaminates are provided. One floating gate transistor embodiment includes a first source/drain region, a...
7154140 Write once read only memory with large work function floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7133315 Write once read only memory employing charge trapping in insulators  
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect...
7132701 Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods  
Provided is a process for forming a contact for a compound semiconductor device without electrically shorting the device. In one embodiment, a highly doped compound semiconductor material is...
7130220 Write once read only memory employing floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7112494 Write once read only memory employing charge trapping in insulators  
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect...
7083996 Nitride semiconductor device and manufacturing method thereof  
A nitride semiconductor device includes a GaN substrate having a single-crystal GaN layer at least on its surface and plurality of device-forming layers made of nitride semiconductor. The...
7015053 Nitride semiconductor laser device  
A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources...
6958497 Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures  
A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well...
6943376 Electrode for p-type SiC  
An object of this invention is to provide an electrode for p-type SiC which can provide improved surface morphology and less thermal damage for a semiconductor crystal layer due to formation of an...
6909119 Low temperature formation of backside ohmic contacts for vertical devices  
A semiconductor device is disclosed that includes a semiconductor substrate having a first surface and a second surface and a first conductivity type and at least one epitaxial layer on the first...
6884644 Low temperature formation of backside ohmic contacts for vertical devices  
The invention comprises a method for forming a metal-semiconductor ohmic contact ( 18 ) for use in a semiconductor device ( 10 ) having a plurality of epitaxial layers ( 14 a-c ) wherein the ohmic...
6835956 Nitride semiconductor device and manufacturing method thereof  
A nitride semiconductor device includes a GaN substrate having a single-crystal GaN layer at least on its surface and plurality of device-forming layers made of nitride semiconductor. The...
6815323 Ohmic contacts on n-type silicon carbide using carbon films  
Ohmic contact formation inclusive of Carbon films on 4H and 6H n-type Silicon Carbide is disclosed. Contact formation includes an initial RF sputtering to produce an amorphous Carbon film with the...
6815304 Silicon carbide bipolar junction transistor with overgrown base region  
Silicon carbide bipolar junction transistors having an overgrown base layer are provided. The bipolar junction transistors can be made with a very thin (e.g., 0.3 μm or less) base layer while...
6803243 Low temperature formation of backside ohmic contacts for vertical devices  
A method for forming an ohmic contact to silicon carbide for a semiconductor device comprises implanting impurity atoms into a surface of a silicon carbide substrate thereby forming a layer on the...
6747291 Ohmic contacts on p-type silicon carbide using carbon films  
Ohmic contact formation on p-type Silicon Carbide is disclosed. The formed contact includes an initial amorphous Carbon film layer converted to graphitic sp 2 Carbon during an elevated temperature...
6711191 Nitride semiconductor laser device  
A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources...
6610999 Multiple stage high power diode  
A Schottky rectifier has multiple stages with substantially identical or very similar structures. Each stage includes a nitride-based semiconductor layer, a Schottky contact formed on one surface...
6599644 Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide  
A method of producing an ohmic contact to p-type silicon carbide comprising two layers, the first one comprising nickel silicide and the second one comprising titanium carbide is disclosed. The...
6365494 Method for producing an ohmic contact  
A component is produced on a substrate made of SiC. The component has at least one ohmic contact and at least one Schottky contact. The component is brought to a temperature of more than 1300° C....
6229193 Multiple stage high power diode  
A Schottky rectifier has multiple stages with substantially identical or very similar structures. Each stage includes a nitride-based semiconductor layer, a Schottky contact formed on one surface...
6221087 Ablation assembly with safety stop  
An ablation assembly has an advancer mechanism coupled to a proximal end of a driveshaft, and an ablation device, such as a rotatable burr, coupled to a distal end of the driveshaft. The advancer...
6204160 Method for making electrical contacts and junctions in silicon carbide  
A method for making electrical contacts and junctions in silicon carbide that concurrently incorporates and activates dopants from a gaseous ambient. The low temperature processing of the present...
5980265 Low resistance, stable ohmic contacts to silicon carbide, and method of making the same  
Stable, high temperature electrical contacts to silicon carbide formed using a unique silicide formation process that employs a sacrificial silicon layer between the silicon carbide and the...
5847397 Photodetectors using III-V nitrides  
A bandpass photodetector using a III-V nitride and having predetermined electrical properties. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and...
5677538 Photodetectors using III-V nitrides  
A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The...
5502003 Silicon carbide electronic device manufacturing method  
Reciprocal diffusion is prevented in a SiC electronic device by interposing an intermediate layer composed of W or a W-Si alloy rather than forming the Ni electrode directly on a SiC base,...
Matches 1 - 34 out of 34