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7417549 Automated antenna trim for transmitting and receiving semiconductor devices  
A radio frequency communication device and method for tuning an antenna attached thereto are disclosed. A radio frequency communication device is disclosed comprising internal circuitry and an...
7402516 Method for making integrated circuits  
Integrated circuits, the key components in thousands of electronic and computer products, include interconnected networks of electrical components. The components are typically wired, or...
7394157 Integrated circuit and seed layers  
Structures are provided which improve performance in integrated circuits. The structures include a diffusion barrier and a seed layer in an integrated circuit both formed using a low energy ion...
7378737 Structures and methods to enhance copper metallization  
Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary...
7368378 Methods for making integrated-circuit wiring from copper, silver, gold, and other metals  
Integrated circuits, the key components in thousands of electronic and computer products, include interconnected networks of electrical components. The components are typically wired, or...
7341633 Apparatus for electroless deposition  
Embodiments of the invention generally provide a fluid processing platform. The platform includes a mainframe having a substrate transfer robot, at least one substrate cleaning cell on the...
7301190 Structures and methods to enhance copper metallization  
Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary...
7285196 Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals  
In recent years, copper wiring has emerged as a promising substitute for the aluminum wiring in integrated circuits, because copper offers lower electrical resistance and better reliability at...
7276795 Small grain size, conformal aluminum interconnects and method for their formation  
A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN...
7262505 Selective electroless-plated copper metallization  
Structures and methods are provided which include a selective electroless copper metallization. The present invention includes a novel methodology for forming copper vias on a substrate, including...
7262130 Methods for making integrated-circuit wiring from copper, silver, gold, and other metals  
Integrated circuits, the key components in thousands of electronic and computer products, include interconnected networks of electrical components. The components are typically wired, or...
7253737 Automated antenna trim for transmitting and receiving semiconductor devices  
A radio frequency communication device and methods of testing and tuning an antenna attached thereto are disclosed. A radio frequency communication device comprises internal circuitry and an...
7253521 Methods for making integrated-circuit wiring from copper, silver, gold, and other metals  
Integrated circuits include networks of electrical components that are typically wired, or interconnected, together with aluminum wires. In recent years, researchers have begun using copper in...
7220665 H2 plasma treatment  
Electronic devices are constructed by a method that includes forming a first conductive layer in an opening in a multilayer dielectric structure supported by a substrate, forming a core conductive...
7217661 Small grain size, conformal aluminum interconnects and method for their formation  
A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN...
7205233 Method for forming CoWRe alloys by electroless deposition  
A method for fabricating a capping layer with enhanced barrier resistance to both copper and oxygen diffusion, comprises forming a capping layer on a conductive surface of an interconnect, wherein...
7192494 Method and apparatus for annealing copper films  
A method and apparatus for annealing copper. The method comprises forming a copper layer by electroplating on a substrate in an integrated processing system and annealing the copper layer in a...
7146722 Method of forming a bond pad structure  
A bond pad structure comprising two bond pads, methods of forming the bond pad structure, an integrated circuit die incorporating the bond pad structure, and methods of using the bond pad structure...
7138014 Electroless deposition apparatus  
An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations...
7112528 Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug  
The present invention generally provides a metallization process for forming a highly integrated interconnect. More particularly, the present invention provides a dual damascene interconnect module...
7105914 Integrated circuit and seed layers  
Structures are provided which improve performance in integrated circuits. The structures include a diffusion barrier and a seed layer in an integrated circuit both formed using a low energy ion...
7091611 Multilevel copper interconnects with low-k dielectrics and air gaps  
Structures and methods are provided for an improved multilevel wiring interconnect in an integrated circuit assembly. The present invention provides for a multilayer copper wiring structure by...
7067421 Multilevel copper interconnect with double passivation  
Structures and methods provide multilevel wiring interconnects in an integrated circuit assembly which alleviate problems associated with integrated circuit size and performance and include methods...
7064447 Bond pad structure comprising multiple bond pads with metal overlap  
A bond pad structure comprising two bond pads, methods of forming the bond pad structure, an integrated circuit die incorporating the bond pad structure, and methods of using the bond pad structure...
7064065 Silver under-layers for electroless cobalt alloys  
In one embodiment, a method for depositing a capping layer on a substrate surface containing a copper layer is provided which includes exposing the substrate surface to a zinc solution, exposing...
7041606 Electroless deposition of doped noble metals and noble metal alloys  
A method for forming an oxidation barrier including at least partially immersing a semiconductor device structure in an electroless plating bath that includes at least one metal salt and at least...
6995470 Multilevel copper interconnects with low-k dielectrics and air gaps  
Structures and methods are provided for an improved multilevel wiring interconnect in an integrated circuit assembly. The present invention provides for a multilayer copper wiring structure by...
6946393 Small grain size, conformal aluminum interconnects and method for their formation  
A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN...
6940172 Chemical vapor deposition of titanium  
A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the...
6929774 Method and apparatus for heating and cooling substrates  
A method and apparatus for heating and cooling a substrate are provided. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating...
6905622 Electroless deposition method  
Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including...
6903462 Chemical vapor deposition of titanium  
A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the...
6899816 Electroless deposition method  
Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including...
6866943 Bond pad structure comprising tungsten or tungsten compound layer on top of metallization level  
A bond pad structure formed over a predetermined area of an IC substrate comprising quickly and easily removable redundancy and passivation layers upon lithography and plasma etching in a plasma...
6830838 Chemical vapor deposition of titanium  
A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the...
6830820 Chemical vapor deposition of titanium  
A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the...
6824666 Electroless deposition method over sub-micron apertures  
An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations...
6821909 Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application  
A method for depositing a passivation layer on a substrate surface using one or more electroplating techniques is provided. Embodiments of the method include selectively depositing an initiation...
6806812 Automated antenna trim for transmitting and receiving semiconductor devices  
A radio frequency communication device and methods of testing and tuning an antenna attached thereto are disclosed. A radio frequency communication device according to the present invention is...
6774487 Small grain size, conformal aluminum interconnects and method for their formation  
A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN...
6774049 Electroless deposition of doped noble metals and noble metal alloys  
A method for forming an oxidation barrier including at least partially immersing a semiconductor device structure in an electroless plating bath that includes at least one metal salt and at least...
6756298 Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals  
In recent years, copper wiring has emerged as a promising substitute for the aluminum wiring in integrated circuits, because copper offers lower electrical resistance and better reliability at...
6743716 Structures and methods to enhance copper metallization  
Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary...
6743714 Low temperature integrated metallization process and apparatus  
The present invention relates generally to an improved process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in...
6726776 Low temperature integrated metallization process and apparatus  
The present invention relates generally to an improved process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in...
6705512 Method of application of conductive cap-layer in flip-chip, cob, and micro metal bonding  
A method of bonding a bonding element to a metal bonding pad comprises the following steps. A semiconductor structure having an exposed, recessed metal bonding pad within a layer opening is...
6693366 Electroless deposition of doped noble metals and noble metal alloys  
A method for forming an oxidation barrier including at least partially immersing a semiconductor device structure in an electroless plating bath that includes at least one metal salt and at least...
6537905 Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug  
The present invention generally provides a metallization process for forming a highly integrated interconnect. More particularly, the present invention provides a dual damascene interconnect module...
6518198 Electroless deposition of doped noble metals and noble metal alloys  
A method for forming an oxidation barrier including at least partially immersing a semiconductor device structure in an electroless plating bath that includes at least one metal salt and at least...
6472756 Method of forming titanium silicide and titanium by chemical vapor deposition and resulting apparatus  
A method is provided for forming a contact in an integrated circuit by chemical vapor deposition (CVD). In one embodiment, a titanium precursor and a silicon precursor are contacted in the presence...
Matches 1 - 50 out of 82 1 2 >