Matches 1 - 33 out of 33
Match Document Document Title
7433237 Memory utilizing oxide nanolaminates  
One transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A gate is separated from the channel region by a gate insulator. The...
7369435 Write once read only memory employing floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7348237 NOR flash memory cell with high storage density  
Structures and methods for NOR flash memory cells, arrays and systems are provided. The NOR flash memory cell includes a vertical floating gate transistor extending outwardly from a substrate. The...
7271435 Modified source/drain re-oxidation method and system  
Methods and devices are disclosed utilizing a phosphorous-doped oxide layer that is added prior to re-oxidation. This allows greater control of the re-oxidation process and greater control of the...
7257022 Nanocrystal write once read only memory for archival storage  
Structures and methods for write once read only memory employing charge trapping are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor...
7221586 Memory utilizing oxide nanolaminates  
Structures, systems and methods for transistors utilizing oxide nanolaminates are provided. One transistor embodiment includes a first source/drain region, a second source/drain region, and a...
7221017 Memory utilizing oxide-conductor nanolaminates  
Structures, systems and methods for floating gate transistors utilizing oxide-conductor nanolaminates are provided. One floating gate transistor embodiment includes a first source/drain region, a...
7193893 Write once read only memory employing floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7166509 Write once read only memory with large work function floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7154778 Nanocrystal write once read only memory for archival storage  
Structures and methods for write once read only memory employing charge trapping are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor...
7133315 Write once read only memory employing charge trapping in insulators  
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect...
7130220 Write once read only memory employing floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7113429 Nor flash memory cell with high storage density  
Structures and methods for NOR flash memory cells, arrays and systems are provided. The NOR flash memory cell includes a vertical floating gate transistor extending outwardly from a substrate. The...
7112494 Write once read only memory employing charge trapping in insulators  
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect...
7037860 Modified source/drain re-oxidation method and system  
Methods and devices are disclosed utilizing a phosphorous-doped oxide layer that is added prior to re-oxidation. This allows greater control of the re-oxidation process and greater control of the...
6996009 NOR flash memory cell with high storage density  
Structures and methods for NOR flash memory cells, arrays and systems are provided. The NOR flash memory cell includes a vertical floating gate transistor extending outwardly from a substrate. The...
6909635 Programmable memory cell using charge trapping in a gate oxide  
An illustrative embodiment of the present invention includes a non-volatile, reprogrammable circuit switch. The circuit switch includes a metal oxide semiconductor field effect transistor (MOSFET)...
6888739 Nanocrystal write once read only memory for archival storage  
Structures and methods for write once read only memory employing charge trapping are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor...
6804136 Write once read only memory employing charge trapping in insulators  
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect...
6759298 Methods of forming an array of flash field effect transistors and circuitry peripheral to such array  
A method of forming an array of FLASH field effect transistors and circuitry peripheral to such array includes forming a sacrificial oxide over an array area and a periphery area of a semiconductor...
6756268 Modified source/drain re-oxidation method and system  
Methods and devices are disclosed utilizing a phosphorous-doped oxide layer that is added prior to re-oxidation. This allows greater control of the re-oxidation process and greater control of the...
6753224 Layer of high-k inter-poly dielectric  
A new Inter Poly Dielectric (IPD) layer is provided for use in creating ultra-small gate electrodes. A first and a second high-k dielectric film are provided which remain amorphous at relatively...
6545314 Memory using insulator traps  
A memory cell provides point defect trap sites in an insulator for storing data charges. Single electrons are stored on respective point defect trap sites and a resulting parameter, such as...
6377523 Seek control method in optical storage device  
Disclosed is a seek control method in an optical storage device, of seek-moving a light beam of an optical head from a certain track on an optical storage medium to a desired track. This seek...
6351411 Memory using insulator traps  
A memory cell provides point defect trap sites in an insulator for storing data charges. Single electrons are stored on respective point defect trap sites and a resulting parameter, such as...
6232643 Memory using insulator traps  
A memory cell provides point defect trap sites in an insulator for storing data charges. Single electrons are stored on respective point defect trap sites and a resulting parameter, such as...
6153470 Floating gate engineering to improve tunnel oxide reliability for flash memory devices  
A method of forming floating gate to improve tunnel oxide reliability for flash memory devices. A substrate having a source, drain, and channel regions is provided. A tunnel oxide layer is formed...
6140181 Memory using insulator traps  
A memory cell provides point defect trap sites in an insulator for storing data charges. Single electrons are stored on respective point defect trap sites and a resulting parameter, such as...
6114196 Method of fabricating metal-oxide semiconductor transistor  
A method of fabricating a MOS transistor. An undoped multi-layer stacked polysilicon structure is formed on a gate oxide layer and then being doped to increase conductivity. After that, the...
6025240 Method and system for using a spacer to offset implant damage and reduce lateral diffusion in flash memory devices  
A system and method for providing a memory cell on a semiconductor is disclosed. In one aspect, the method and system include providing at least one gate stack on the semiconductor, depositing at...
5726070 Silicon-rich tunnel oxide formed by oxygen implantation for flash EEPROM  
A process for forming an EEPROM having silicon rich tunnel oxide is disclosed. This oxide is used in the formation of flash EEPROMs and results in high tunneling current at low voltages. The oxide...
5712177 Method for forming a reverse dielectric stack  
An embodiment of the invention allows the reversing of the sequence of a stacked gate dielectric layer so that a thermal oxide overlies a CVD deposited oxide. A CVD dielectric (12) is first...
5432749 Non-volatile memory cell having hole confinement layer for reducing band-to-band tunneling  
An arrangement for reducing the erratic operation of a non-volatile memory cell caused by the accumulation of holes at a specific location within the cell during the electrical erasing of the cell...
Matches 1 - 33 out of 33