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7416994 Atomic layer deposition systems and methods including metal beta-diketiminate compounds  
The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one β-diketiminate ligand. Such systems and methods can be useful for...
7410671 Sequential chemical vapor deposition  
The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the...
7405158 Methods for depositing tungsten layers employing atomic layer deposition techniques  
In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in...
7368402 Systems and methods for forming tantalum oxide layers and tantalum precursor compounds  
A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum...
7352048 Integration of barrier layer and seed layer  
The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer....
7332442 Systems and methods for forming metal oxide layers  
A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor...
7332032 Precursor mixtures for use in preparing layers on substrates  
Methods of forming a layer on a substrate using complexes of Formula I. The complexes and methods are particularly suitable for the preparation of semiconductor structures. The complexes are of the...
7300873 Systems and methods for forming metal-containing layers using vapor deposition processes  
A method of forming (and an apparatus for forming) a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or...
7300870 Systems and methods of forming refractory metal nitride layers using organic amines  
A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum nitride barrier layer, on a substrate by using an atomic layer...
7262133 Enhancement of copper line reliability using thin ALD tan film to cap the copper line  
A method for depositing a cap layer over a metal-containing interconnect is provided. In one aspect, the cap layer is formed by introducing a pulse of a metal-containing compound followed by a...
7235486 Method for forming tungsten materials during vapor deposition processes  
In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a...
7211144 Pulsed nucleation deposition of tungsten layers  
A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing...
7208413 Formation of boride barrier layers using chemisorption techniques  
A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one...
7201803 Valve control system for atomic layer deposition chamber  
A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system...
7196007 Systems and methods of forming refractory metal nitride layers using disilazanes  
A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum (silicon) nitride barrier layer, on a substrate by using a...
7189287 Atomic layer deposition using electron bombardment  
Formation of a layer of material on a surface by atomic layer deposition methods and systems includes using electron bombardment of the chemisorbed precursor.
7122464 Systems and methods of forming refractory metal nitride layers using disilazanes  
A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum (silicon) nitride barrier layer, on a substrate by using a...
7115528 Systems and method for forming silicon oxide layers  
A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor...
7115499 Cyclical deposition of tungsten nitride for metal oxide gate electrode  
A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a...
7115494 Method and system for controlling the presence of fluorine in refractory metal layers  
A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when...
7115166 Systems and methods for forming strontium- and/or barium-containing layers  
A method of forming (and apparatus for forming) a layer, such as a strontium titanate, barium titanate, or barium-strontium titanate layer, on a substrate by employing a vapor deposition method,...
7101795 Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer  
A method and system to form a refractory metal layer on a substrate features nucleating a substrate using sequential deposition techniques in which the substrate is serially exposed to first and...
7094685 Integration of titanium and titanium nitride layers  
Embodiments of the invention generally relate to an apparatus and method of integration of titanium and titanium nitride layers. One embodiment includes providing one or more cycles of a first set...
7094680 Formation of a tantalum-nitride layer  
A method of forming a tantalum nitride layer for integrated circuit fabrication is disclosed. In one embodiment, the method includes forming a tantalum nitride layer by chemisorbing a tantalum...
7085616 Atomic layer deposition apparatus  
A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more...
7049226 Integration of ALD tantalum nitride for copper metallization  
A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The...
7033922 Method and system for controlling the presence of fluorine in refractory metal layers  
A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when...
7030042 Systems and methods for forming tantalum oxide layers and tantalum precursor compounds  
A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum...
7022948 Chamber for uniform substrate heating  
Embodiments of the invention generally provide an apparatus and a method for providing a uniform thermal profile to a plurality of substrates during heat processing. In one embodiment, a cassette...
6998579 Chamber for uniform substrate heating  
In a first aspect, a first apparatus is provided for heating substrates. The first apparatus includes (1) a chamber having a bottom portion and a top portion; (2) a plurality of heated supports...
6998014 Apparatus and method for plasma assisted deposition  
Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus...
6995081 Systems and methods for forming tantalum silicide layers  
A method of forming (and apparatus for forming) tantalum suicide layers (including tantalum silicon nitride layers), which are typically useful as diffusion barrier layers, on a substrate by using...
6967159 Systems and methods for forming refractory metal nitride layers using organic amines  
A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum nitride barrier layer, on a substrate by using an atomic layer...
6951804 Formation of a tantalum-nitride layer  
A method of forming a tantalum-nitride layer ( 204 ) for integrated circuit fabrication is disclosed. Alternating or co-reacting pulses of a tantalum containing precursor and a nitrogen containing...
6936906 Integration of barrier layer and seed layer  
The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer....
6916398 Gas delivery apparatus and method for atomic layer deposition  
One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the...
6911391 Integration of titanium and titanium nitride layers  
Embodiments of the present invention generally relate to an apparatus and method of integration of titanium and titanium nitride layers. One embodiment includes providing one or more cycles of a...
6878206 Lid assembly for a processing system to facilitate sequential deposition techniques  
A lid assembly for a semiconductor processing system is provided. The lid assembly generally includes a lid having a gas manifold mounted on a first side and a baffle plate mounted on a second...
6875271 Simultaneous cyclical deposition in different processing regions  
A method for simultaneous deposition of multiple compounds on a substrate is provided. In one aspect, a gas stream is introduced into a processing chamber and flows across a substrate surface...
6869838 Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications  
A method of passivation layer deposition using a cyclical deposition process is described. The cyclical deposition process may comprise alternately adsorbing a silicon-containing precursor and a...
6855368 Method and system for controlling the presence of fluorine in refractory metal layers  
A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when...
6849545 System and method to form a composite film stack utilizing sequential deposition techniques  
A system and method to form a stacked barrier layer for copper contacts formed on a substrate. The substrate is serially exposed to first and second reactive gases to form an adhesion layer. Then,...
6846516 Multiple precursor cyclical deposition system  
Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate...
6833161 Cyclical deposition of tungsten nitride for metal oxide gate electrode  
A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a...
6827978 Deposition of tungsten films  
A method of forming a composite tungsten film on a substrate is described. The composite tungsten film comprises sequentially deposited tungsten nucleation layers and tungsten bulk layers. Each of...
6825447 Apparatus and method for uniform substrate heating and contaminate collection  
Embodiments of the invention generally provides an apparatus and method for heating substrates, comprising a heater disposed within a chamber, a plurality of heated supports movably disposed within...
6811814 Method for growing thin films by catalytic enhancement  
A method of growing a thin film onto a substrate. A precursor of the film is fed into a reaction space in the form of a vapor phase pulse causing the precursor to adsorb onto the surface of the...
6794284 Systems and methods for forming refractory metal nitride layers using disilazanes  
A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum (silicon) nitride barrier layer, on a substrate by using a...
6784049 Method for forming refractory metal oxide layers with tetramethyldisiloxane  
A method of forming (and apparatus for forming) refractory metal oxide layers, such as tantalum pentoxide layers, on substrates by using vapor deposition processes with refractory metal precursor...
6765178 Chamber for uniform substrate heating  
Embodiments of the invention generally provide an apparatus and a method for providing a uniform thermal profile to a plurality of substrates during heat processing. In one embodiment, a cassette...
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