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7378719 |
Low leakage MIM capacitor
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between...
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7368343 |
Low leakage MIM capacitor
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between...
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EP1145279B1 |
SEMICONDUCTOR ELEMENT WITH A TUNGSTEN OXIDE LAYER AND METHOD FOR ITS PRODUCTION
Abstract not available for EP1145279 Abstract of corresponding document: DE19901210 The invention relates to a semiconductor element with at least one layer of tungsten oxide (WOx), optionally in...
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7208787 |
Semiconductor device and a process for manufacturing a complex oxide film
A semiconductor device is prepared using an insulating film consisting of a tantalum-tungsten oxide crystal film, a tantalum-molybdenum oxide crystal film, or a laminated film where a silicon...
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6861695 |
High-k dielectric materials and processes for manufacturing them
High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and...
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6787429 |
High-K dielectric materials and processes for manufacturing them
High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and...
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6452757 |
Data sensor including layered dielectric gap
A data transfer head includes a data transfer element for transferring date between the data transfer head and a data storage medium and a dielectric gap electrically shielding the data transfer...
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6449132 |
Dielectric gap material for magnetoresistive heads with conformal step coverage
A silicon nitride dielectric film for use in an MR head according to the present invention comprises from about 38% to 44% by volume of Si, from about 35% to 37% by volume of N, and from about 21%...
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EP1145279A2 |
SEMICONDUCTOR ELEMENT AND METHOD FOR ITS PRODUCTION
Abstract not available for EP1145279 Abstract of corresponding document: DE19901210 The invention relates to a semiconductor element with at least one layer of tungsten oxide (WOx), optionally in...
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6258675 |
High K gate electrode
A semiconductor structure with a high-K insulative layer. An insulative layer is disposed on a silicon substrate and includes a first nitride layer and a high-K layer. A gate is disposed on the...
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5754442 |
Path analyzing displaying apparatus for designing logic circuit
The invention provides a path analyzing displaying apparatus for designing a logic circuit which can achieve reduction in intervention degree of a designer and expansion of human interface with a...
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5688724 |
Method of providing a dielectric structure for semiconductor devices
A dielectric structure on a substrate includes a primary dielectric layer on the substrate, the primary dielectric being a metal oxide, such as tantalum pentoxide, having a high dielectric...
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5563331 |
Magnetoresistive sensor utilizing a sensor material with a perovskite-like crystal structure
A magnetoresistive sensor may be constructed with material having a perovskite-like crystal structure and an increased magnetoresistive effect. The material is based on the composition (A1) 1 -x...
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5476727 |
Thin film electroluminescence display element
A thin film electroluminescence display element composed of a soda-lime glass substrate having provided thereon a barrier layer including tantalum (V) oxide, a transparent indium-tin oxide (ITO)...
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5412160 |
Circuit board
A circuit board comprising a substrate, at least one dielectric film formed on the substrate and made of at least one selected from the group consisting of AlN, BN, diamond, diamond-like carbon,...
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5404075 |
TFEL element with tantalum oxide and tungsten oxide insulating layer
A thin film EL element includes a pair of electrodes disposed oppositely each other, a pair of insulator layers disposed between the electrodes, at least one of the insulator layers consisting...
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