Matches 1 - 25 out of 25
Match Document Document Title
7335462 Method of depositing an amorphous carbon layer  
A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert...
7223526 Method of depositing an amorphous carbon layer  
A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert...
7148156 Removable amorphous carbon CMP stop  
A method is provided for processing a substrate including removing amorphous carbon material disposed on a low k dielectric material with minimal or reduced defect formation and minimal dielectric...
7144822 High density plasma process for optimum film quality and electrical results  
A method for plasma processing of semiconductor wafers is provided that reduces plasma-induced damage to the gate dielectric while limiting damage to the wafer from particulates that flake off of...
7109114 HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance  
A method of operating a substrate processing chamber that includes, prior to a substrate processing operation, flowing a seasoning gas comprising silane and oxygen into said chamber at a flow ratio...
6858265 Technique for improving chucking reproducibility  
Method and apparatus for improving the reproducibility of chucking forces of an electrostatic chuck used in plasma enhanced CVD processing of substrates provides for precoating of the electrostatic...
6852647 Removable amorphous carbon CMP stop  
A method is provided for processing a substrate including removing amorphous carbon material disposed on a low k dielectric material with minimal or reduced defect formation and minimal dielectric...
6841341 Method of depositing an amorphous carbon layer  
A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert...
6624064 Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application  
The present invention provides a method of depositing an amorphous fluorocarbon film using a high bias power applied to the substrate on which the material is deposited. The invention contemplates...
6573030 Method for depositing an amorphous carbon layer  
A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert...
EP0892083B1 Method and apparatus for seasoning a substrate processing chamber  
Abstract of EP0892083 An improved method of reducing the level of contaminants (e.g., fluorine) absorbed in films deposited within a substrate processing chamber. A seasoning layer is deposited...
6449521 Decontamination of a plasma reactor using a plasma after a chamber clean  
A method and apparatus for reducing fluorine and other sorbable contaminants in plasma reactor used in chemical vapor deposition process such as the deposition of silicon oxide layer by the...
6413321 Method and apparatus for reducing particle contamination on wafer backside during CVD process  
Backside particle contamination of semiconductor wafers subjected to chemical vapor deposition is significantly reduced by optimizing various process parameters, alone or in combination. A high...
EP1109211A2 Method of reducing undesired etching of insulation due to elevated boron concentrations  
A method is provided for reducing elevated boron concentrations (denoted as "boron spikes") in an insulating layer containing silicon, boron and other elements where the layer interfaces with...
6223685 Film to tie up loose fluorine in the chamber after a clean process  
An improved method of reducing the level of contaminants (e.g., fluorine) absorbed in films deposited within a substrate processing chamber. A seasoning layer is deposited within the substrate...
6162488 Method for closed loop control of chemical vapor deposition process  
The present invention is directed to a method of controlling the application of a surface coating by chemical deposition using a closed loop control on growth rate. The method compares a measure of...
6121161 Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions  
A method and apparatus for controlling the introduction of contaminates into a deposition chamber that occur naturally within the chamber components. The CVD chamber is "seasoned" with a protective...
6020035 Film to tie up loose fluorine in the chamber after a clean process  
An improved method of reducing the level of contaminants (e.g., fluorine) absorbed in films deposited within a substrate processing chamber. A seasoning layer is deposited within the substrate...
5900288 Method for improving substrate adhesion in fluoropolymer deposition processes  
A method of cleaning a substrate, in particular, the front face of a thermal ink jet printing device, to improve subsequent thin film deposition in a single chamber plasma processing system...
5895586 Plasma processing apparatus and plasma processing method in which a part of the processing chamber is formed using a pre-fluorinated material of aluminum  
There are provided a plasma processing apparatus and a plasma processing method which are suitable for processing a processed substance using a gas plasma containing fluorine atoms. Structural...
EP0892083A1 Method and apparatus for seasoning a substrate processing chamber  
An improved method of reducing the level of contaminants (e.g., fluorine) absorbed in films deposited within a substrate processing chamber. A seasoning layer is deposited within the substrate...
5824375 Decontamination of a plasma reactor using a plasma after a chamber clean  
A method and apparatus for reducing fluorine and other sorbable contaminants in plasma reactor used in chemical vapor deposition process such as the deposition of silicon oxide layer by the...
EP0870851A2 Methods and apparatus for minimizing excess aluminum accumulation in CVD chambers  
A method and apparatus for minimizing excess aluminum deposition that can build up inside a substrate processing chamber (15) during an aluminum CVD substrate processing operation. The method of...
5589233 Single chamber CVD process for thin film transistors  
A method of depositing layers of intrinsic amorphous silicon and doped amorphous silicon sequentially on a substrate in the same CVD chamber without incurring a dopant contamination problem. The...
EP0648858A1 Methods of coating plasma etch chambers and apparatus for plasma etching workpieces.  
The disclosure relates to a method of protecting a semiconductor workpiece (129) from contact with free-floating particulate contamination during plasma etching of the workpiece. Gaseous materials...
Matches 1 - 25 out of 25