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7402489 Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same  
A storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode including a barrier layer interposed between a conductive plug and an oxidation...
7393753 Method for forming a storage cell capacitor compatible with high dielectric constant materials  
Described are integrated circuit electrodes and method for fabricating an electrode, which include, in an embodiment forming a silicon, first portion of the electrode in a lower region of a...
7385240 Storage cell capacitor compatible with high dielectric constant materials  
An integrated circuit structure includes a digit line and an electrode adapted to be part of a storage cell capacitor and includes a barrier layer interposed between a conductive plug and an...
7378719 Low leakage MIM capacitor  
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between...
7368343 Low leakage MIM capacitor  
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between...
EP1145279B1 SEMICONDUCTOR ELEMENT WITH A TUNGSTEN OXIDE LAYER AND METHOD FOR ITS PRODUCTION  
Abstract not available for EP1145279 Abstract of corresponding document: DE19901210 The invention relates to a semiconductor element with at least one layer of tungsten oxide (WOx), optionally in...
7335570 Method of forming insulating films, capacitances, and semiconductor devices  
Insulating metal oxide or nitride films are deposited by RF magnetron sputtering. During sputtering, the atmospheric gas comprises an oxygen or nitride compound gas and an inert gas. The proportion...
7319270 Multi-layer electrode and method of forming the same  
An interconnect includes an opening formed in a dielectric layer. A conductive barrier is deposited in the opening, over which a first conductive layer is deposited. A conductive oxide is deposited...
7253052 Method for forming a storage cell capacitor compatible with high dielectric constant materials  
Described are integrated circuit electrodes and method for fabricating an electrode, which include, in an embodiment forming a silicon, first portion of the electrode in a lower region of a...
7205599 Devices having improved capacitance  
A capacitor formed by a process using only two deposition steps and a dielectric formed by oxidizing a metal layer in an electrolytic solution. The capacitor has first and second conductive plates...
7153707 Method for forming a storage cell capacitor compatible with high dielectric constant materials  
An integrated circuit structure includes a digit line and an electrode adapted to be part of a storage cell capacitor and includes a barrier layer interposed between a conductive plug and an...
7126205 Devices having improved capacitance and methods of their fabrication  
A capacitor formed by a process using only two deposition steps and a dielectric formed by oxidizing a metal layer in an electrolytic solution. The capacitor has first and second conductive plates...
7084482 Capacitor of a semiconductor device and memory device using the same  
A capacitor of a semiconductor device includes a lower electrode, a dielectric layer, including a plurality of band gaps, formed on the lower electrode, and an upper electrode formed on the...
7042033 ULSI MOS with high dielectric constant gate insulator  
MOS transistor formed on a semiconductor substrate of a first conductivity type and method of fabrication are provided. The device includes (a) an interfacial layer formed on the substrate; (b) a...
7015532 Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same  
A storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode including a barrier layer interposed between a conductive plug and an oxidation...
7012292 Oxidative top electrode deposition process, and microelectronic device structure  
A method of preventing oxygen deficiency in a ferroelectric or high ε film material having a top electrode layer deposited thereon. Process conditions are employed that either enable the top...
6960541 Process for fabrication of a semiconductor component having a tungsten oxide layer  
A semiconductor element with at least one layer of tungsten oxide, optionally in a structured tungsten oxide layer, is described. The semiconductor element is characterized in that the relative...
6958257 Tantalum sputtering target and method of manufacture  
Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials...
6896969 Oxidative conditioning compositions for metal oxide layer and applications thereof  
A metal oxide layer may made more highly oxidized by exposing the layer to sulfur trioxide. The leakage current of the layer may thereby be decreased, providing a capacitor containing such a layer...
6887579 Oxidative conditioning compositions for metal oxide layer and applications thereof  
A metal oxide layer may made more highly oxidized by exposing the layer to sulfur trioxide. The leakage current of the layer may thereby be decreased, providing a capacitor containing such a layer...
6861695 High-k dielectric materials and processes for manufacturing them  
High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and...
6838367 Method for simultaneous formation of fuse and capacitor plate and resulting structure  
An improved method for forming a fuse element is disclosed. During the formation of the upper capacitor plate in a capacitor structure, metals or their alloys are simultaneously patterned as an...
6838353 Devices having improved capacitance and methods of their fabrication  
A capacitor formed by a person using only two deposition steps and a dielectric formed by oxidizing a metal layer in an electrolytic solution. The capacitor has first and second conductive plates...
6794705 Multi-layer Pt electrode for DRAM and FRAM with high K dielectric materials  
A multi-layer electrode ( 246 ) and method of fabrication thereof in which a conductive region ( 244 ) is separated from a barrier layer ( 222 ) by a first conductive liner ( 240 ) and a second...
6791131 Method for forming a storage cell capacitor compatible with high dielectric constant materials  
The invention is a storage cell capacitor having a storage node electrode comprising a barrier layer interposed between a conductive plug and an oxidation resistant layer. A thick insulative layer...
6787429 High-K dielectric materials and processes for manufacturing them  
High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and...
6781180 Trench capacitor and method for fabricating the same  
A trench capacitor for use in a semiconductor memory cell is formed in a substrate and includes a trench having an upper region and a lower region. An insulation collar is formed in the upper...
6762924 Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same  
The invention is a storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode having a barrier layer interposed between a conductive plug and an...
6727148 ULSI MOS with high dielectric constant gate insulator  
MOS transistor formed on a semiconductor substrate of a first conductivity type and method of fabrication are provided. The device includes (a) an interfacial layer formed on the substrate; (b) a...
6596596 Methods of forming a field effect transistors  
A method of forming a field effect transistor includes forming a tungsten nitride comprising layer proximate at least one of a semiconductive channel region or a conductive gate layer. The tungsten...
6566161 Tantalum sputtering target and method of manufacture  
Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials...
6555473 Field effect transistors and methods of forming a field effect transistor  
The invention includes capacitors, capacitor forming methods, field effect transistors, and field effect transistor forming methods. In one aspect, a method of forming a layer including tungsten...
6531730 Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same  
The invention is a storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode comprising a barrier layer interposed between a conductive plug and an...
6495427 Method for forming a capacitor compatible with high dielectric constant materials having two independent insulative layers  
The invention is a storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode comprising a barrier layer interposed between a conductive plug and an...
6475856 Capacitors and capacitor forming methods  
The invention includes capacitors, capacitor forming methods, field effect transistors, and field effect transistor forming methods. In one aspect, a method of forming a layer including tungsten...
6432793 Oxidative conditioning method for metal oxide layer and applications thereof  
A metal oxide layer may made more highly oxidized by exposing the layer to sulfur trioxide. The leakage current of the layer may thereby be decreased, providing a capacitor containing such a layer...
6391801 Method of forming a layer comprising tungsten oxide  
The invention includes capacitors, capacitor forming methods, field effect transistors, and field effect transistor forming methods. In one aspect, a method of forming a layer including tungsten...
6387749 Method of manufacturing a capacitor in a semiconductor device  
The present invention relates generally to a method of manufacturing a semiconductor device. There is disclosed a method of manufacturing a semiconductor device capable of obtaining a higher static...
6380028 Semiconductor device and a method of manufacturing thereof  
This invention discloses a semiconductor device which comprises a thin semiconductor substrate; first and second word lines formed on the thin semiconductor substrate; a first source, a common...
6365486 Method of fabricating semiconductor devices utilizing in situ passivation of dielectric thin films  
A capacitor for a semiconductor device is fabricated by a method which reduces the interaction of a capacitor electrode and a dielectric layer in the capacitor. One or more passivation layers are...
6355516 Method of manufacturing a capacitor with a bi-layer Ta2O5 capacitor dielectric in a semiconductor device including performing a plasma treatment on the first Ta2O5 layer  
There is disclosed a method of manufacturing a capacitor in a semiconductor device capable of effectively removing the organic impurity of a Ta 2 O 5 film by performing an in-situ plasma process...
EP1145279A2 SEMICONDUCTOR ELEMENT AND METHOD FOR ITS PRODUCTION  
Abstract not available for EP1145279 Abstract of corresponding document: DE19901210 The invention relates to a semiconductor element with at least one layer of tungsten oxide (WOx), optionally in...
6303427 Method of manufacturing a capacitor in a semiconductor device  
The present invention relates to a method of manufacturing a capacitor in a semiconductor device. It is designed to solve the problem due to oxidization of the surface of the underlying tungsten...
6268620 Method of forming capacitors on integrated circuit  
A method of making a semiconductor device, comprises the steps of providing an insulating layer, forming a series of holes in the insulating layer, depositing a first layer of a metal, or a...
6201276 Method of fabricating semiconductor devices utilizing in situ passivation of dielectric thin films  
A capacitor for a semiconductor device is fabricated by a method which reduces the interaction of a capacitor electrode and a dielectric layer in the capacitor. One or more passivation layers are...
6144057 Semiconductor memory device including a field effect transistor  
A semiconductor memory device including a field effect transistor associated with a semiconductor substrate and a capacitor. The capacitor is connected to a drain region of the transistor....
6066528 Method for forming a capacitor compatible with high dielectric constant materials having two independent insulative layers  
The invention is a storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode comprising a barrier layer interposed between a conductive plug and an...
6030847 Method for forming a storage cell capacitor compatible with high dielectric constant materials  
The invention is a storage cell capacitor having a storage node electrode comprising a barrier layer interposed between a conductive plug and an oxidation resistant layer. A thick insulative layer...
6027966 Isolated sidewall capacitor  
A capacitor structure is provided, with a first conductor on top of a substrate, a first non-conductor on top of and substantially in register with the first conductor, the first conductor and...
5959327 Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same  
The invention is a storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode comprising a barrier layer interposed between a conductive plug and an...
Matches 1 - 50 out of 65 1 2 >