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7399707 In situ application of etch back for improved deposition into high-aspect-ratio features  
A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma...
7387940 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry  
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated...
7368800 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry  
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated...
7368366 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry  
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated...
7364981 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry  
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated...
7361614 Method of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry  
This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of...
7329586 Gapfill using deposition-etch sequence  
Methods deposit a film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. Flows of first precursor deposition gases are...
7294556 Method of forming trench isolation in the fabrication of integrated circuitry  
This invention includes methods of forming a phosphorus doped silicon dioxide comprising layers, and methods of forming trench isolation in the fabrication of integrated circuitry. In one...
7250380 Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry  
This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of...
7250378 Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry  
This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of...
7235459 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry  
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated...
7229931 Oxygen plasma treatment for enhanced HDP-CVD gapfill  
Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas...
7217634 Methods of forming integrated circuitry  
The invention includes methods of forming integrated circuitry. In one implementation, a method of forming an integrated circuit includes forming a plurality of isolation trenches within...
7205240 HDP-CVD multistep gapfill process  
A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H 2 ...
7196021 HDP-CVD deposition process for filling high aspect ratio gaps  
A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a...
7183227 Use of enhanced turbomolecular pump for gapfill deposition using high flows of low-mass fluent gas  
High flows of low-mass fluent gases are used in an HDP-CVD process for gapfill deposition of a silicon oxide film. An enhanced turbomolecular pump that provides a large compression ratio for such...
7157385 Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry  
This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of...
7132134 Staggered in-situ deposition and etching of a dielectric layer for HDP CVD  
A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate...
7125815 Methods of forming a phosphorous doped silicon dioxide comprising layer  
This invention includes methods of forming phosphorus doped silicon dioxide comprising layers, and methods of forming trench isolation in the fabrication of integrated circuitry. In one...
7087536 Silicon oxide gapfill deposition using liquid precursors  
A silicon oxide film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A liquid Si—C—O—H precursor is...
7081414 Deposition-selective etch-deposition process for dielectric film gapfill  
A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is...
7053010 Methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming arrays of memory cells  
This invention includes methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming bit line over...
7052552 Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD  
A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma...
7049211 In-situ-etch-assisted HDP deposition using SiF4  
A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF 4 , a fluent gas, a silicon source, and an oxidizing...
7012010 Methods of forming trench isolation regions  
In accordance with an aspect of the invention, a method of forming a trench isolation region includes forming a trench within a substrate. A silanol layer is formed to partially fill the trench and...
6958112 Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation  
Methods and systems are provided for depositing silicon oxide in a gap on a substrate. The silicon oxide is formed by flowing a process gas into a process chamber and forming a plasma having an...
6929700 Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD  
A substrate processing apparatus comprising a substrate processing chamber, a gas distribution system operatively coupled to the chamber, a high density plasma power source, a controller...
6908862 HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features  
A method of depositing a film on a substrate disposed in a substrate processing chamber. The method includes depositing a first portion of the film by forming a high density plasma from a first...
6903031 In-situ-etch-assisted HDP deposition using SiF4 and hydrogen  
A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF 4 , H 2 , a silicon source, and an oxidizing gas...
6897120 Method of forming integrated circuitry and method of forming shallow trench isolation in a semiconductor substrate  
A method of forming integrated circuitry includes forming a silicon nitride comprising layer over a semiconductor substrate. At least a portion of the silicon nitride comprising layer is etched...
6888212 Method for trench isolation by selective deposition of low temperature oxide films  
A method of forming isolation regions in a silicon substrate comprising the steps of forming a trench in the silicon substrate, filling the trench with a silanol polymer material then heating the...
6869880 In situ application of etch back for improved deposition into high-aspect-ratio features  
A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma...
6821577 Staggered in-situ deposition and etching of a dielectric layer for HDP CVD  
A method for depositing a conformal dielectric layer employing a dep-etch technique features selectively decreasing the deposition gas present in a process chamber where a substrate to be covered...
6802944 High density plasma CVD process for gapfill into high aspect ratio features  
A method of depositing a film on a substrate. In one embodiment, the method includes depositing a first portion of the film using a high density plasma to partially fill a gap formed between...
6730593 Method of depositing a low K dielectric with organo silane  
A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties...
6719012 Method of forming trench isolation regions  
In accordance with an aspect of the invention, a method of forming a trench isolation region includes forming a trench within a substrate. A silanol layer is formed to partially fill the trench and...
6709721 Purge heater design and process development for the improvement of low k film properties  
The present invention provides a method of depositing a carbon doped silicon oxide film having a low dielectric constant (k). A process gas mixture containing at least a carrier gas, an oxidizer, a...
6667553 H:SiOC coated substrates  
This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant and a light transmittance of 95% or more for light with a wavelength...
6660663 Computer readable medium for holding a program for performing plasma-assisted CVD of low dielectric constant films formed from organosilane compounds  
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The...
6660656 Plasma processes for depositing low dielectric constant films  
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a...
6596655 Plasma processes for depositing low dielectric constant films  
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a...
6593655 Method for producing hydrogenated silicon oxycarbide films having low dielectric constant  
This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises reacting an methyl-containing silane in a...
6583028 Methods of forming trench isolation regions  
In accordance with an aspect of the invention, a method of forming a trench isolation region includes forming a trench within a substrate. A silanol layer is formed to partially fill the trench and...
6562690 Plasma processes for depositing low dielectric constant films  
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a...
6541282 Plasma processes for depositing low dielectric constant films  
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a...
6537929 CVD plasma assisted low dielectric constant films  
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The...
6511903 Method of depositing a low k dielectric with organo silane  
A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties...
6455394 Method for trench isolation by selective deposition of low temperature oxide films  
A method of forming isolation regions in a silicon substrate comprising the steps of forming a trench in the silicon substrate, filling the trench with a silanol polymer material then heating the...
6451686 Control of semiconductor device isolation properties through incorporation of fluorine in peteos films  
A method and apparatus for reducing oxide traps within a silicon oxide film by incorporating a selected level of fluorine in the silicon oxide film. The method includes the steps of distributing a...
6375744 Sequential in-situ heating and deposition of halogen-doped silicon oxide  
A low dielectric constant insulating film on a substrate is formed by introducing a process gas comprising a silicon source, a fluorine source, and oxygen into a chamber. The process gas is formed...
Matches 1 - 50 out of 71 1 2 >