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7141850 |
Gated semiconductor assemblies and methods of forming gated semiconductor assemblies
In one aspect, the invention includes a method of forming a gated semiconductor assembly, comprising: a) forming a silicon nitride layer over and against a floating gate; and b) forming a control...
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7057263 |
Semiconductor wafer assemblies comprising photoresist over silicon nitride materials
In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the...
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6929852 |
Protective overlayer for ceramics
An alumina comprising composition protective overlayer ( 20 ) for protecting a ceramic matrix composite material ( 12 ) from a high temperature, moisture-containing environment. Alumina may be used...
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6906420 |
Semiconductor device
The semiconductor device of the present invention includes: a substrate; a first conductor film supported by the substrate; an insulating film formed on the substrate to cover the first conductor...
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6756634 |
Gated semiconductor assemblies
In one aspect, the invention includes a method of forming a gated semiconductor assembly, comprising: a) forming a silicon nitride layer over and against a floating gate; and b) forming a control...
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EP1394138A2 |
Protective overlayer for ceramics
An alumina comprising composition protective overlayer (20) for protecting a ceramic matrix composite material (12) from a high temperature, moisture-containing environment. Alumina may be used as...
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6693345 |
Semiconductor wafer assemblies comprising photoresist over silicon nitride materials
In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the...
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6683381 |
Semiconductor device having a copper interconnect layer
The semiconductor device of the present invention includes: a substrate; a first conductor film supported by the substrate; an insulating film formed on the substrate to cover the first conductor...
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6677661 |
Semiconductive wafer assemblies
In one aspect, the invention includes a semiconductor fabrication process, comprising: a) providing a substrate; b) forming a layer of silicon nitride over the substrate, the layer having a...
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6670288 |
Methods of forming a layer of silicon nitride in a semiconductor fabrication process
In one aspect, the invention includes a semiconductor fabrication process, comprising: a) providing a substrate; b) forming a layer of silicon nitride over the substrate, the layer having a...
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6635530 |
Methods of forming gated semiconductor assemblies
The invention includes a method of forming a gated semiconductor assembly. A first transistor gate layer is formed over a substrate. A silicon nitride layer is formed over the first transistor gate...
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6475912 |
Semiconductor device and method and apparatus for fabricating the same while minimizing operating failures and optimizing yield
The semiconductor device of the present invention includes: a substrate; a first conductor film supported by the substrate; an insulating film formed on the substrate to cover the first conductor...
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6461985 |
Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers
In one aspect, the invention includes a method of semiconductive wafer processing comprising forming a silicon nitride layer over a surface of a semiconductive wafer, the silicon nitride layer...
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6451504 |
Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride
A semiconductor processing method of promoting adhesion of photoresist to an outer substrate layer predominately comprising silicon nitride includes, a) providing a substrate; b) providing an outer...
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6429151 |
Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers
In one aspect, the invention includes a method of semiconductive wafer processing comprising forming a silicon nitride layer over a surface of a semiconductive wafer, the silicon nitride layer...
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6417559 |
Semiconductor wafer assemblies comprising photoresist over silicon nitride materials
In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the...
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6326321 |
Methods of forming a layer of silicon nitride in semiconductor fabrication processes
In one aspect, the invention includes a semiconductor fabrication process, comprising: a) providing a substrate; b) forming a layer of silicon nitride over the substrate, the layer having a...
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6323139 |
Semiconductor processing methods of forming photoresist over silicon nitride materials
In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the...
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6316372 |
Methods of forming a layer of silicon nitride in a semiconductor fabrication process
In one aspect, the invention includes a semiconductor fabrication process, comprising: a) providing a substrate; b) forming a layer of silicon nitride over the substrate, the layer having a...
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6300671 |
Semiconductor wafer assemblies comprising photoresist over silicon nitride materials
In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the...
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6300253 |
Semiconductor processing methods of forming photoresist over silicon nitride materials, and semiconductor wafer assemblies comprising photoresist over silicon nitride materials
In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the...
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6297171 |
Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride
A semiconductor processing method of promoting adhesion of photoresist to an outer substrate layer predominately comprising silicon nitride includes, a) providing a substrate; b) providing an outer...
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6255139 |
Method for providing a thermal path through particles embedded in a thermal cap
The present invention relates generally to a new method for improving the reliability of cooling designs using thermal paste to cool chips in semiconductor modules and structure thereof. More...
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6162512 |
Process for modifying surfaces of nitride, and nitride having surfaces modified thereby
A process for modifying a nitride surface includes irradiating energized ion particles onto the nitride surface while blowing a reactive gas directly on the nitride surface under a vacuum...
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6111314 |
Thermal cap with embedded particles
The present invention relates generally to a new method for improving the reliability of cooling designs using thermal paste to cool chips in semiconductor modules and structure thereof. More...
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6093956 |
Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers
In one aspect, the invention includes a method of semiconductive wafer processing comprising forming a silicon nitride layer over a surface of a semiconductive wafer, the silicon nitride layer...
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5985771 |
Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers
In one aspect, the invention includes a method of semiconductive wafer processing comprising forming a silicon nitride layer over a surface of a semiconductive wafer, the silicon nitride layer...
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5980974 |
Coated orthopaedic implant components
An improved coated orthopaedic implant component is disclosed. The implant may be coated with platinum, iridium or other metals for improved characteristics. Ion beam coating orthopaedic parts by...
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5926739 |
Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride
A semiconductor processing method of promoting adhesion of photoresist to an outer substrate layer predominately comprising silicon nitride includes, a) providing a substrate; b) providing an outer...
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5855950 |
Method for growing an alumina surface on orthopaedic implant components
A method is disclosed for ion beam treating orthopaedic parts by ion implanting the parts with aluminum ions while the parts are immersed in an oxygen-containing background gas. When the parts are...
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5731046 |
Fabrication of diamond and diamond-like carbon coatings
Energy, such as from three different lasers, is directed at the surface of a substrate to mobilize and vaporize a carbon constituent element (e.g., carbide) within the substrate (e.g., steel). The...
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5620754 |
Method of treating and coating substrates
Energy, such as from one or more lasers, is directed at the surface of a substrate to mobilize and vaporize a constituent element (e.g., carbide) within the substrate (e.g., steel). The vaporized...
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5554415 |
Substrate coating techniques, including fabricating materials on a surface of a substrate
Energy, such as from one or more lasers, is directed at the surface of a substrate to mobilize and vaporize a constituent element (e.g., carbide) within the substrate (e.g., steel). The vaporized...
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5423923 |
Hard film of amorphous Ti-Si alloy having fine tin particles
Deposition of a hard film of Ti-Si-N composite material on a substrate is carried out by using a source of evaporation possessing a composition of Ti a Si b (wherein "a" and "b" stand for atomic...
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5405458 |
Method of producing hard film of Ti-Si-N composite material
Deposition of a hard film of Ti--Si--N composite material on a substrate is carried out by using a source of evaporation possessing a composition of Ti a Si b (wherein "a" and "b" stand for...
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