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7402516 Method for making integrated circuits  
Integrated circuits, the key components in thousands of electronic and computer products, include interconnected networks of electrical components. The components are typically wired, or...
7394157 Integrated circuit and seed layers  
Structures are provided which improve performance in integrated circuits. The structures include a diffusion barrier and a seed layer in an integrated circuit both formed using a low energy ion...
7378737 Structures and methods to enhance copper metallization  
Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary...
7368378 Methods for making integrated-circuit wiring from copper, silver, gold, and other metals  
Integrated circuits, the key components in thousands of electronic and computer products, include interconnected networks of electrical components. The components are typically wired, or...
7301190 Structures and methods to enhance copper metallization  
Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary...
7285839 Coating of copper and silver air bridge structures to improve electromigration resistance and other applications  
An improved electrical interconnect for an integrated circuit and methods for providing the same are disclosed. The electrical interconnect includes an air bridge extending through a gaseous medium...
7285196 Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals  
In recent years, copper wiring has emerged as a promising substitute for the aluminum wiring in integrated circuits, because copper offers lower electrical resistance and better reliability at...
7271085 Method of fabricating a semiconductor interconnect structure  
A method of fabricating a semiconductor interconnect structure is disclosed. The method includes forming a first metal plug in a first opening defined by a first layer of photoresist, forming a...
7262505 Selective electroless-plated copper metallization  
Structures and methods are provided which include a selective electroless copper metallization. The present invention includes a novel methodology for forming copper vias on a substrate, including...
7262130 Methods for making integrated-circuit wiring from copper, silver, gold, and other metals  
Integrated circuits, the key components in thousands of electronic and computer products, include interconnected networks of electrical components. The components are typically wired, or...
7253521 Methods for making integrated-circuit wiring from copper, silver, gold, and other metals  
Integrated circuits include networks of electrical components that are typically wired, or interconnected, together with aluminum wires. In recent years, researchers have begun using copper in...
7220665 H2 plasma treatment  
Electronic devices are constructed by a method that includes forming a first conductive layer in an opening in a multilayer dielectric structure supported by a substrate, forming a core conductive...
7211512 Selective electroless-plated copper metallization  
Structures and methods are provided which include a selective electroless copper metallization. The present invention includes a novel methodology for forming copper vias on a substrate. This...
7105914 Integrated circuit and seed layers  
Structures are provided which improve performance in integrated circuits. The structures include a diffusion barrier and a seed layer in an integrated circuit both formed using a low energy ion...
7094682 Coating of copper and silver air bridge structures to improve electromigration resistance and other applications  
An improved electrical interconnect for an integrated circuit and methods for providing the same are disclosed. The electrical interconnect includes an air bridge extending through a gaseous medium...
7091611 Multilevel copper interconnects with low-k dielectrics and air gaps  
Structures and methods are provided for an improved multilevel wiring interconnect in an integrated circuit assembly. The present invention provides for a multilayer copper wiring structure by...
7075166 Coating of copper and silver air bridge structures to improve electromigration resistance and other applications  
An improved electrical interconnect for an integrated circuit and methods for providing the same are disclosed. The electrical interconnect includes an air bridge extending through a gaseous medium...
7067421 Multilevel copper interconnect with double passivation  
Structures and methods provide multilevel wiring interconnects in an integrated circuit assembly which alleviate problems associated with integrated circuit size and performance and include methods...
7049219 Coating of copper and silver air bridge structures to improve electromigration resistance and other applications  
An improved electrical interconnect for an integrated circuit and methods for providing the same are disclosed. The electrical interconnect includes an air bridge extending through a gaseous medium...
6995470 Multilevel copper interconnects with low-k dielectrics and air gaps  
Structures and methods are provided for an improved multilevel wiring interconnect in an integrated circuit assembly. The present invention provides for a multilayer copper wiring structure by...
6984892 Semiconductor structure implementing low-K dielectric materials and supporting stubs  
A semiconductor device is provided. The semiconductor device includes a substrate having transistor devices and a plurality of copper interconnect metallization lines and conductive vias. The...
6849927 Forming submicron integrated-circuit wiring from gold, silver, copper, and other metals  
A typical integrated circuit interconnects millions of microscopic transistors and resistors with aluminum wires buried in silicon-dioxide insulation. Yet, aluminum wires and silicon-dioxide...
6780755 Gas dome dielectric system for ULSI interconnects  
A method of forming a multilevel conductor structure for ULSI circuits is provided. The structure includes a substrate having a plurality of dielectric supports extending from the substrate to...
6756298 Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals  
In recent years, copper wiring has emerged as a promising substitute for the aluminum wiring in integrated circuits, because copper offers lower electrical resistance and better reliability at...
6743716 Structures and methods to enhance copper metallization  
Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary...
6633074 Integrated circuit wiring with low RC time delay  
The present invention is directed to a semiconductor interconnect structure comprised of a promoter layer defining openings and a metal layer having a portion elevated above the substrate assembly...
6614099 Copper metallurgy in integrated circuits  
A typical integrated circuit interconnects millions of microscopic transistors and resistors with aluminum wires buried in silicon-dioxide insulation. Yet, aluminum wires and silicon-dioxide...
6509256 Methods of forming electrically conductive interconnections and electrically interconnected substrates  
Methods of forming electrically conductive interconnections and electrically interconnected substrates are described. In one implementation, a first substrate having an outer surface is provided...
6476493 Semiconductor device  
A semiconductor device comprises a substrate having at least first, second and third metal layers formed over it. The metal layers comprise parallel strips. The strips of a given metal layer may be...
6368939 Multilevel interconnection structure having an air gap between interconnects  
A semiconductor device has an air-gap/multi-level interconnection structure. The interconnects are insulated from one another by an air gap in the same layer, and by an interlevel dielectric film...
EP0756322B1 Semiconductor device with integrated heat sink  
Abstract of EP0756322 The component has a number of elementary transistor fingers where the passivation layer is broken for a homogeneous emitter contact. A subcollector (4) is buried in the...
6331733 Semiconductor device  
This invention discloses a semiconductor device including a substrate, at least first, second and third metal layers formed over the substrate, the second metal layer including a plurality of...
6271597 Methods for forming electrically conductive interconnections and electrically interconnected substrates  
Methods of forming electrically conductive interconnections and electrically interconnected substrates are described. In one implementation, a first substrate having an outer surface is provided...
6218282 Method of forming low dielectric tungsten lined interconnection system  
Multi-level semiconductor devices are formed with reduced parasitic capacitance without sacrificing structural integrity or electromigration performance by removing the inter-layer dielectrics and...
6146985 Low capacitance interconnection  
A semiconductor device having reduced parasitic capacitance and, consequentially increased integrated circuit speed, is achieved by removing sections of dielectric interlayers which do not support...
6143639 Methods of forming electrically conductive interconnections and electrically interconnected substrates  
Methods of forming electrically conductive interconnections and electrically interconnected substrates are described. In one implementation, a first substrate having an outer surface is provided...
6127264 Integrated circuit having conductors of enhanced cross-sectional area  
A interconnect structure is provided having a conductor with enhanced thickness. The conductor includes an upper portion and a lower portion, wherein the lower portion geometry is sufficient to...
6110760 Methods of forming electrically conductive interconnections and electrically interconnected substrates  
Methods of forming electrically conductive interconnections and electrically interconnected substrates are described. In one implementation, a first substrate having an outer surface is provided...
6091149 Dissolvable dielectric method and structure  
A fabrication process is provided that produces an air gap dielectric in which a multi-level interconnect structure is formed upon a temporary supporting material. The temporary material is...
6090703 Method of forming an integrated circuit having conductors of enhanced cross-sectional area with etch stop barrier layer  
A interconnect structure is provided having a conductor with enhanced thickness. The conductor includes an upper portion and a lower portion, wherein the lower portion geometry is sufficient to...
6064118 Multilevel interconnection structure having an air gap between interconnects  
A semiconductor device has an air-gap/multi-level interconnection structure. The interconnects are insulated from one another by an air gap in the same layer, and by an interlevel dielectric film...
6034436 Semiconductor device having an improved through-hole structure  
A semiconductor device has isolated first layer interconnects, second layer interconnects, third layer interconnects, and through-holes each connecting one of the second layer interconnects and a...
5990001 Method of forming a semiconductor device having a critical path wiring  
Disclosed is a semiconductor device, which has: a wiring corresponding to a critical path, a wiring delay time of which determines an operating speed of an entire circuit, and a wiring...
5969421 Integrated circuit conductors that avoid current crowding  
An integrated circuit and method of use provides conductive vias between conductor layers so that current flows in such a manner that current crowding is reduced in at least one underlying layer....
5900668 Low capacitance interconnection  
A semiconductor device having reduced parasitic capacitance and, consequentially increased integrated circuit speed, is achieved by removing sections of dielectric interlayers which do not support...
5847462 Integrated circuit having conductors of enhanced cross-sectional area with etch stop barrier layer  
An interconnect structure is provided having a conductor with enhanced thickness. The conductor includes an upper portion and a lower portion, wherein the lower portion geometry is sufficient to...
5798559 Integrated circuit structure having an air dielectric and dielectric support pillars  
A method of making an integrated circuit interconnect structure having air as the effective dielectric between metallization layers includes the steps of: a) providing an air dielectric formation...
5719433 Semiconductor component with integrated heat sink  
A semiconductor component that could be a power transistor type of component comprises mesa-structured elementary bipolar transistors. This component has a thick, metal heat sink of which a part...
5710462 Semiconductor integrated circuit device having multi-level wiring structure without dot pattern  
First plugs project from a lower inter-level insulating layer so as to be coplanar with an upper surface of a middle-level wiring on the lower-level insulating layer, and through-holes are formed...
5675187 Reliability of metal leads in high speed LSI semiconductors using dummy vias  
A semiconductor device (and method of manufacturing thereof) having metal leads (114+130) with improved reliability, comprising metal leads (114+130) on a substrate 112, a low-dielectric constant...
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