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7371538 |
Microluminometer chip and method to measure bioluminescence
An integrated microluminometer includes an integrated circuit chip having at least one n-well/p-substrate junction photodetector for converting light received into a photocurrent, and a detector on...
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7244997 |
Magneto-luminescent transducer
An electronic system includes a three terminal device having a light emitting portion and a magnetically sensitive portion. The magnetically sensitive portion is for modulating light emission from...
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6724020 |
Semiconductor device and power amplifier using the same
A semiconductor device comprising a bipolar transistor having an emitter layer consisting of a semiconductor containing indium, and a protective insulating film containing silicon and oxygen which...
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6576937 |
Semiconductor device and power amplifier using the same
A semiconductor device including a bipolar transistor having an emitter layer consisting of a semiconductor containing indium, and a protective insulating film containing silicon and oxygen which...
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6576487 |
Method to distinguish an STI outer edge current component with an STI normal current component
The present invention details a method which characterizes an STI fabrication process, and more particularly provides information relating to a variation in the STI sidewall profile between...
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6465830 |
RF voltage controlled capacitor on thick-film SOI
A voltage controlled capacitor sandwiched between a buried oxide and a shallow trench insulator to form a near ideal P+ to n-well diode with minimal parasitic capacitance and resistance.
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6455892 |
Silicon carbide semiconductor device and method for manufacturing the same
In an accumulation mode MOSFET, a surface channel layer is disposed on a p − type base region between an n + type source region and an n − type epi layer. The surface channel layer is...
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6221760 |
Semiconductor device having a silicide structure
A semiconductor device has a thin semi-insulating polycrystalline silicon (SIPOS) film on the surface of a silicon substrate having a diffused region therein. The SIPOS film is thermally treated at...
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6143614 |
Monolithic inductor
The monolithic inductor (30) includes a substrate (38), a spiral metal trace (32) disposed insulatively above the substrate (38), where a parasitic capacitance (56) is generated between the spiral...
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6040219 |
Method of fabricating power semiconductor device using semi-insulating polycrystalline silicon (SIPOS) film
A method for manufacturing a power semiconductor device including a semi-insulating polycrystalline silicon (SIPOS) film is provided. According to this method, first, a conductive collector region...
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5717241 |
Gate controlled lateral bipolar junction transistor
A gate controlled lateral bipolar junction transistor (GCLBJT) device for an integrated circuit and a method of fabrication thereof are provided. The GCLBJT resembles a merged field effect...
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5705827 |
Tunnel transistor and method of manufacturing same
The tunnel transistor of the present invention has either a junction structure wherein a degenerated first semiconductor having one conduction type, a non-degenerated second semiconductor and a...
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5329113 |
Optoelectronic switching node
An optoelectronic switching node is disclosed wherein two input optical beams can be switched in the sense that they can be regenerated in either one of two output spatial locations in response to...
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5241197 |
Transistor provided with strained germanium layer
A transistor having a high carrier mobility and suited for a high-speed operation can be formed by utilizing a fact that the carrier mobility in a strained germanium layer is large. A strain...
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5111255 |
Buried channel heterojunction field effect transistor
A high transconductance field effect transistor is realized by controlling the doping level in a conducting channel buried beneath a heterointerface. In one exemplary embodiment, a channel...
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5010374 |
Quantum well laser utilizing an inversion layer
A quantum well laser exhibiting near ideal switching characteristics, high power conversion efficiency and, moreover, capable of utilizing the advantageous characteristics of a double...
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