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7372741 Nonvolatile memory apparatus having a processor and plural memories one or more of which is a nonvolatile memory having circuitry which performs an erase operation and an erase verify operation when the processor specifies the erase operation mode to the nonvolatile memory  
A nonvolatile memory apparatus which includes plural memories one of which is a nonvolatile memory such as a Flash EEPROM capable of being specified a plurality of operations from a processing unit...
7369435 Write once read only memory employing floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7348237 NOR flash memory cell with high storage density  
Structures and methods for NOR flash memory cells, arrays and systems are provided. The NOR flash memory cell includes a vertical floating gate transistor extending outwardly from a substrate. The...
7257022 Nanocrystal write once read only memory for archival storage  
Structures and methods for write once read only memory employing charge trapping are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor...
7221586 Memory utilizing oxide nanolaminates  
Structures, systems and methods for transistors utilizing oxide nanolaminates are provided. One transistor embodiment includes a first source/drain region, a second source/drain region, and a...
7221017 Memory utilizing oxide-conductor nanolaminates  
Structures, systems and methods for floating gate transistors utilizing oxide-conductor nanolaminates are provided. One floating gate transistor embodiment includes a first source/drain region, a...
7193893 Write once read only memory employing floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7166509 Write once read only memory with large work function floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7154778 Nanocrystal write once read only memory for archival storage  
Structures and methods for write once read only memory employing charge trapping are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor...
7133315 Write once read only memory employing charge trapping in insulators  
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect...
7130220 Write once read only memory employing floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7113429 Nor flash memory cell with high storage density  
Structures and methods for NOR flash memory cells, arrays and systems are provided. The NOR flash memory cell includes a vertical floating gate transistor extending outwardly from a substrate. The...
7112494 Write once read only memory employing charge trapping in insulators  
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect...
7099199 Nonvolatile semiconductor memory device  
A nonvolatile memory apparatus which includes plural memories one of which is a nonvolatile memory such as a Flash EEPROM capable of being specified a plurality of operations from a processing unit...
7020028 Nonvolatile semiconductor memory device  
An EEPROM having an erasing control circuit that performs at least the read out operation one time on the corresponding memory cells after an erasing operation is performed in connection therewith....
6996009 NOR flash memory cell with high storage density  
Structures and methods for NOR flash memory cells, arrays and systems are provided. The NOR flash memory cell includes a vertical floating gate transistor extending outwardly from a substrate. The...
6936527 Low voltage non-volatile memory cell  
A memory cell comprises a multilayer gate heating structure formed over a channel region between source and drain regions. The multilayer gate heating structure comprises polysilicon and metal...
6930920 Low voltage non-volatile memory cell  
A memory cell comprises a multilayer gate heating structure formed over a channel region between source and drain regions. The multilayer gate heating structure comprises polysilicon and metal...
6909635 Programmable memory cell using charge trapping in a gate oxide  
An illustrative embodiment of the present invention includes a non-volatile, reprogrammable circuit switch. The circuit switch includes a metal oxide semiconductor field effect transistor (MOSFET)...
6888739 Nanocrystal write once read only memory for archival storage  
Structures and methods for write once read only memory employing charge trapping are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor...
6804136 Write once read only memory employing charge trapping in insulators  
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect...
6791882 Nonvolatile semiconductor memory device  
An EEPROM having an erasing control circuit that performs at least the read out operation one time on the corresponding memory cells after an erasing operation is performed in connection therewith....
6747902 Nonvolatile semiconductor memory apparatus  
A nonvolatile memory apparatus contains plural memories, at least one of which is a nonvolatile memory, and a processing unit. Data input/output (I/O) terminals of the memories and processing unit...
6545314 Memory using insulator traps  
A memory cell provides point defect trap sites in an insulator for storing data charges. Single electrons are stored on respective point defect trap sites and a resulting parameter, such as...
6534998 Semiconductor device and control method thereof  
Disclosed is a semiconductor device capable of stabilizing a gate voltage at high voltage and high current, protecting the device from breakdown by preventing current nonuniformity and oscillations...
6438036 Nonvolatile semiconductor memory device  
An EEPROM having an erasing control circuit that performs at least the read out operation one time on the corresponding memory cells after an erasing operation is performed in connection therewith....
6351411 Memory using insulator traps  
A memory cell provides point defect trap sites in an insulator for storing data charges. Single electrons are stored on respective point defect trap sites and a resulting parameter, such as...
6271560 Single-poly EPROM cell with CMOS compatible programming voltages  
The Frohmann-Bentchkowsky EPROM cell is programmed by utilizing biasing voltages which are sufficient to induce hot punchthrough holes to flow from the source region to the drain region, and...
6259629 Nonvolatile semiconductor memory device  
Within an EEPROM having a memory array in which the electrically erasable nonvolatile storage elements are arranged in a matrix form, an erasing control circuit is included, which performs at least...
6246606 Memory using insulator traps  
A memory cell provides point defect trap sites in an insulator for storing data charges. Single electrons are stored on respective point defect trap sites and a resulting parameter, such as...
6181600 Nonvolatile semiconductor memory device  
Within an EEPROM having a memory array in which the electrically erasable nonvolatile storage elements are arranged in a matrix form, an erasing control circuit is included, which performs at least...
6157576 Nonvolatile semiconductor memory device  
Within an EEPROM having a memory array in which the electrically erasable nonvolatile storage elements are arranged in a matrix form, an erasing control circuit is included, which performs at least...
6137724 Memory device that utilizes single-poly EPROM cells with CMOS compatible programming voltages  
A memory device is disclosed which includes a plurality of memory cells formed in rows and columns. Each memory cell includes a Frohmann-Bentchkowsky p-channel memory transistor and an n-channel...
6137723 Memory device having erasable Frohmann-Bentchkowsky EPROM cells that use a well-to-floating gate coupled voltage during erasure  
A memory device has a plurality of memory cells formed in rows and columns. Each memory cell includes an erasable Frohmann-Bentchkowsky p-channel memory transistor and an n-channel MOS access...
6137722 Memory array having Frohmann-Bentchkowsky EPROM cells with a reduced number of access transistors  
A plurality of Frohmann-Bentchkowsky p-channel memory transistors which are arranged in rows and columns is disclosed. Each column of memory transistors has an associated output line. A row of...
6137721 Memory device having erasable frohmann-bentchkowsky EPROM cells that use a plate-to-floating gate coupled voltage during erasure  
A memory device is disclosed which includes a plurality of memory cells formed in rows and columns. Each memory cell includes an erasable Frohmann-Bentchkowsky p-channel memory transistor and an...
6130840 Memory cell having an erasable Frohmann-Bentchkowsky memory transistor  
A memory cell has an erasable Frohmann-Bentchkowsky p-channel memory transistor and an n-channel MOS access transistor. Eraseability is provided by utilizing a p-well which is formed adjacent to...
6128223 Semiconductor memory device  
A semiconductor memory device includes a memory cell and first and second electrodes. The memory cell has a floating gate formed on a semiconductor substrate via a gate insulating film to be...
5898614 Non-volatile semiconductor memory device  
A non-volatile semiconductor memory device comprises a plurality of memory cells each including a semiconductor substrate of a first conductivity type having a main surface region, a control gate...
5844842 Nonvolatile semiconductor memory device  
Within an EEPROM having a memory array in which the electrically erasable nonvolatile storage elements are arranged in a matrix form, an erasing control circuit is included, which performs at least...
5691939 Triple poly PMOS flash memory cell  
A P-channel MOS memory cell has P+ source and drain regions formed in an N-well. A thin runnel oxide is provided between the well surface and an overlying floating gate. In one embodiment, the thin...
EP0517607B1 Method of fabrication of a non-volatile memory cell and memory cell fabricated with this method  
Abstract of EP0517607 This method consists in producing strips in a stack of an insulating layer and of a conductive layer intended to form respectively the gate insulators (210) and the floating...
EP0520825B1 Process for the simultaneous fabrication of high- and low voltage semiconductor devices, integrated circuit containing the same, systems and methods  
Abstract of EP0520825 An electrically-erasable, electrically-programmable read-only memory cell (676) is formed at a face of a semiconductor layer (152) having a first conductivity-type and...
5465231 EEPROM and logic LSI chip including such EEPROM  
Disclosed is an EEPROM cell which can be manufactured with ease by the standard CMOS process. The EEPROM cell of the present invention has a first MOS transistor formed in a semiconductor substrate...
EP0623959A2 EEPROM cell.  
An EEPROM cell has a first MOS transistor formed in a semiconductor substrate 1 of a first conductivity type and having current conducting regions 2a, 2b of a second conductivity type and a gate...
5301150 Flash erasable single poly EPROM device  
A single polysilicon layer electrically programmable and electrically erasable read only memory cell is described. The cell utilizes an n-well inversion capacitor, formed in a semiconductor...
5291052 CMOS semiconductor device with (LDD) NMOS and single drain PMOS  
A MOS semiconductor device and the methods for constructing the device. The MOS device provided with first and second MOS transistors are formed on two identical wafer sections. The impurity region...
5256584 Method for producing a non-volatile memory cell using spacers  
Method for producing a non-volatile memory cell and obtained memory cell. This method consists of embodying strips in a stacking of one nonconducting film and one conductive film, both films...
5253200 Electrically erasable and programmable read only memory using stacked-gate cell  
An electrically erasable programmable nonvolatile memory device includes a plurality of memory cells. The memory device has architecture similar to or the same as an UV-EPROM. Erasure operating is...
5225700 Circuit and method for forming a non-volatile memory cell  
An electrically-erasable, electrically-programmable read-only memory cell (676) is formed at a face of a semiconductor layer (152) having a first conductivity-type and includes a tunnel diode doped...
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