Matches 1 - 9 out of 9
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6515348 Semiconductor device with FET MESA structure and vertical contact electrodes  
A semiconductor device comprises one or more field effect devices (FD) having source and drain regions ( 5 and 6 ) spaced apart by a body region ( 3 a ). A gate structure ( 7 a , 7 b ),...
EP0744774A2 Field effect transistor and method for producing same  
A field effect transistor includes: a semiconductor substrate; an active layer formed on a part of a principal surface of the semiconductor substrate and having a predetermined impurity...
5130764 Multi layer photopolymeric structure for the manufacturing of MESFET devices with submicrometric gate and variable length recessed channel  
A technique utilizing conventional photolithography to manufacture GaAs MESFET devices having sub-micrometric gate and variable length recessed channel. The structure of these devices consists of...
5031006 Semiconductor device having a Schottky decoupling diode  
A semiconductor device includes at least one field effect transistor integrated monolithically on a substrate with a decoupling diode between a d.c. supply conductor and a ground conductor. The...
5019875 Semiconductor device radiation hardened MESFET  
This invention is for improving the radiation hardness or radiation resistance of GaAs MESFETs. According to this invention, an n-type active layer is formed by doping GaAs crystal evenly in the...
4499481 Heterojunction Schottky gate MESFET with lower channel ridge barrier  
An FET with an extremely short channel formed by the apex of a substrate ridge structure protruding upward through the channel layer toward a Schottky-barrier gate contact. The device is formed by...
4499440 Low reflectivity electrodes in semiconductive SAW devices  
Low reflectivity electrodes (2-4) are formed within recesses extending from a major surface of a semiconductive and piezoelectric substrate (1) (such as gallium arsenide) so as to reduce SAW...
4404732 Self-aligned extended epitaxy mesfet fabrication process  
A fabrication process for a gallium arsenide MESFET device is disclosed. A feature of the invention is placing a gate structure on the gallium arsenide substrate. Then a process including molecular...
4387386 Microwave controlled field effect switching device  
A microwave switching device replacing PIN diodes and operating at higher eeds requires reduced switching current. A field effect controlled device is utilized with no ground plane, for elimination...
Matches 1 - 9 out of 9