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7413480 Silicon pillars for vertical transistors  
In order to form a more stable silicon pillar which can be used for the formation of vertical transistors in DRAM cells, a multi-step masking process is used. In a preferred embodiment, an oxide...
7371627 Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines  
A memory array with data/bit lines extending generally in a first direction formed in an upper surface of a substrate and access transistors extending generally upward and aligned generally atop a...
7368365 Memory array buried digit line  
A method of forming a buried digit line is disclosed. Sacrificial spacers are formed along the sidewalls of an isolation trench, which is then filled with a sacrificial material. One spacer is...
7368344 Methods of reducing floating body effect  
Methods of reducing the floating body effect in vertical transistors are disclosed. The floating body effect occurs when an active region in a pillar is cut off from the substrate by a depletion...
7285812 Vertical transistors  
Vertical transistors for memory cells, such as 4F2 memory cells, are disclosed. The memory cells use digit line connections formed within the isolation trench to connect the digit line with the...
7247570 Silicon pillars for vertical transistors  
In order to form a more stable silicon pillar which can be used for the formation of vertical transistors in DRAM cells, a multi-step masking process is used. In a preferred embodiment, an oxide...
7229895 Memory array buried digit line  
A method of forming a buried digit line is disclosed. Sacrificial spacers are formed along the sidewalls of an isolation trench, which is then filled with a sacrificial material. One spacer is...
7015794 Active transponder with means allowing the maximum communication distance to be varied  
The active transponder is intended for several applications or to operate in various modes requiring different levels of security. Security is controlled by varying the maximum communication...
6949448 Local oxidation of silicon (LOCOS) method employing graded oxidation mask  
A method for forming a local oxidation of silicon (LOCOS) isolation region on a silicon substrate. A series of patterned graded oxidation mask layers formed of a material comprising silicon, oxygen...
6677658 Advanced isolation process for large memory arrays  
A process for creating silicon isolation regions which utilizes silicon islands or pillars as sources of silicon for silicon dioxide (or silicon oxide) fields. These silicon oxide fields separate...
EP0722094B1 Transmitter-receiver for non-contact IC card system  
Abstract of EP0722094 In a non-contact IC card system which transmits and receives signals between an interrogator and a transponder, a transmitter-receiver used for the interrogator comprises a...
6380606 Locos isolation process using a layered pad nitride and dry field oxidation stack and semiconductor device employing the same  
The present invention provides methods of manufacturing a field oxide isolation structure over a semiconductor. One of the methods includes the steps of: (1) depositing a first stack-nitride...
6306727 Advanced isolation process for large memory arrays  
A process for creating silicon isolation regions which utilizes silicon islands or pillars as sources of silicon for silicon dioxide (or silicon oxide) fields. These silicon oxide fields separate...
EP1143377A1 Active transponder including means to modify the maximum communication distance  
Abstract not available for EP1143377
6090686 Locos isolation process using a layered pad nitride and dry field oxidation stack and semiconductor device employing the same  
The present invention provides methods of manufacturing a field oxide isolation structure over a semiconductor. One of the methods includes the steps of: (1) depositing a first stack-nitride...
5728614 Method to improve the topography of a field oxide region  
A process for reducing the severe topography in field oxide regions, via use of insulator spacers, on the sides of the field oxide region, has been developed. An insulator layer is first deposited...
5703573 Transmitter-receiver for non-contact IC card system  
In a non-contact IC card system which transmits and receives signals between an interrogator and a transponder, a transmitter-receiver used for the interrogator comprises a distance detecting means...
EP0722094A1 Transmitter-receiver for non-contact IC card system  
In a non-contact IC card system which transmits and receives signals between an interrogator and a transponder, a transmitter-receiver used for the interrogator comprises a distance detecting means...
4789560 Diffusion stop method for forming silicon oxide during the fabrication of IC devices  
High quality silicon oxide is grown for integrated circuits by oxidizing poly-crystalline silicon under an oxygen gas flow. A diffusion stop layer of thermal silicon nitride is formed on the...
4613556 Heterogeneous electrophotographic imaging members of amorphous silicon and silicon oxide  
Disclosed is an electrographic imaging member consisting essentially of a supporting substrate, a hydrogenated amorphous silicon photogenerating layer, and in contact therewith a charge...
4583281 Method of making an integrated circuit  
A method of forming in a silicon substrate an active region bounded by a field of silicon dioxide is described. On top of a mesa formed in the silicon substrate is provided a three layered...
4544617 Electrophotographic devices containing overcoated amorphous silicon compositions  
Disclosed is an electrophotographic photoresponsive device comprised of a supporting substrate, an amorphous silicon charge transport layer, a trapping layer comprised of doped amorphous silicon,...
4472459 Local oxidation of silicon substrate using LPCVD silicon nitride  
The formation of silicon dioxide isolated silicon islands on the surface of a substrate is improved by utilizing as an oxidation mask a patterned layer of silicon nitride which is deposited by...
4429011 Composite conductive structures and method of making same  
A composite conductive structure which includes an insulating substrate on which is provided a conductor of molybdenum covered by a layer of molybdenum nitride and a method of making the structure...
4398992 Defect free zero oxide encroachment process for semiconductor fabrication  
A method for local oxideation of a semiconductor using only conventional large scale integration (LSI) fabrication techniques is provided which results in an oxide layer without the formation of...
4361600 Method of making integrated circuits  
A method of forming in a substrate of monocrystalline silicon semiconductor material having a major surface, a plurality of islands of silicon each including an active region of the substrate...
Matches 1 - 26 out of 26