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EP0270567B1 |
INFRARED IMAGER
Abstract not available for EP0270567 Abstract of corresponding document: WO8707082 An infrared imager (10) for sensing infrared radiation. The imager (10) comprises a detection layer (14) of...
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5366927 |
Method of fabricating epitaxially deposited ohmic contacts using group II-V I
An ohmic contact to a p-type zinc selenide (ZnSe) layer in a Group II-VI semiconductor device, includes a zinc telluride selenide (ZnTe x Se 1 -x) layer on the zinc selenide layer, a mercury...
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5016073 |
Photodetector semiconductor which does not require extensive cooling
A photodetector of semiconductor material includes a photosensitive region adjacent to a minority carrier extraction region arranged when biased to depress the photosensitive region minority...
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4952995 |
Infrared imager
An infrared imager (10) is disclosed for sensing infrared radiation. The imager (10) comprises a detection layer (14) of semiconductor material which is operable to detect the occurrence of...
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4927771 |
Method of thermal isolation of detector elements in an uncooled staring focal plane array
A method of thermally isolating detector elements in an uncooled focal pl array. A backfill material of arsenic trisulfide is deposited inside reticulated grooves in a detector material to provide...
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4910154 |
Manufacture of monolithic infrared focal plane arrays
The manufacture of monolithic HgCdTe detectors and Si circuitry in an IR focal plane array is achieved by forming a protective layer of SiO 2 or SiN x on a silicon wafer containing silicon...
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4829354 |
Drift field switch
A drift field switch incorporating a layer of semiconductor material having a first conductivity type, two spaced apart regions having the same conductivity type or a second conductivity type which...
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4749659 |
Method of manufacturing an infrared-sensitive charge coupled device
A charge coupled device (CCD) sensitive to infrared radiation composed of a succession of three layers of Group III-V semiconductor material. The layers are a window layer, a sensitive layer and a...
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4746622 |
Process for preparing a charge coupled device with charge transfer direction biasing implants
A process is disclosed of preparing a charge coupled device containing charge transfer direction biasing implants wherein the steps and materials for patterning electrodes and implants promote...
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4672737 |
Detector array module fabrication process
A photo-detector array module is disclosed which comprises a stack of semiconductor chips having integrated circuitry on each chip. To permit the emplacement of photo-detectors on the focal plane...
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4630090 |
Mercury cadmium telluride infrared focal plane devices having step insulator and process for making same
The disclosure relates to a stepped insulator process for HgCdTe infared focal plane devices, the insulator being a combination of two insulator materials, ZnS and SiO, which differ in dielectric...
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4614960 |
Focal plane array
A focal plane array, comprised of an infrared (IR) photovoltaic detector array coupled to a charge coupled device (CCD), which provides for minimum deviation in input threshold voltage between...
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4553152 |
Monolithic infrared ray charge transfer element
A monolithic infrared ray charge transfer element suitable for use in the 8 to 14 μm wavelength range, having improved response characteristics, and which is easily fabricated. A charge transfer...
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4533933 |
Schottky barrier infrared detector and process
A Schottky barrier diode formed of iridium-silicon material having a frequency response encompassing the 3.0 to 5.0 micrometer infrared band. The bandwidth, uniformity of response and silicon base...
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4518255 |
Temperature tracking range finder
The disclosed apparatus is a temperature tracking narrow band optical range finder which includes a prior art GaAs laser diode for emitting a laser energy pulse to a target and an improved GaAs...
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4450460 |
Magnetic-infrared-emitting diode
A plate of a semiconductor having a narrow energy gap such as InSb, is applied with a magnetic field in parallel therewith and further supplied with a current in parallel therewith also as well as...
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4445269 |
Methods of making infrared photoconductors with passivation control
An array of semiconductive photoconductor detectors is formed on a substr with which the array forms a heterojunction. The array has a whole or partial overlayer of the same material as the...
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4401487 |
Liquid phase epitaxy of mercury cadmium telluride layer
The specification discloses a process and apparatus for forming a layer of mercury cadmium telluride of predetermined composition on the surface of a selected substrate by first providing a crystal...
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4387987 |
Method of producing solid-state color imaging devices
In a solid-state imaging device wherein filters of the three primary colors in the mosaic filter configuration are stacked on a solid-state imager LSI in which a plurality of picture elements each...
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4377904 |
Method of fabricating a narrow band-gap semiconductor CCD imaging device
A monolithic charge-coupled infrared imaging device (CCIRID) is fabricated on N-type HgCdTe. A native oxide layer on the semiconductor is used, in combination with ZnS to provide first level...
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