Matches 1 - 17 out of 17
Match Document Document Title
5936290 Semiconductor device having an insulated gate field effect transistor and a well spaced from the channel region of the insulated gate field effect transistor  
A CMOS semiconductor device comprises a well and a MOSFET adjacent to the well, wherein the distance between the channel region of the MOSFET is larger than the distance between the well and any of...
4761903 Waterproof display frame  
Pictures are displayed by means of a frame comprised of a light-transmissive rigid plate and a flexible water-impermeable sealing sheet. The picture is placed on the rear face of the rigid plate....
4203126 CMOS structure and method utilizing retarded electric field for minimum latch-up  
CMOS device and method utilizing a retarded electric field for reducing the current gain in the base region of parasitic transistors in the device. A buried layer is utilized in the base region of...
4161417 Method of making CMOS structure with retarded electric field for minimum latch-up  
Method for making CMOS device utilizing a retarded electric field for reducing the current gain in the base region of parasitic transistors in the device. A buried layer is utilized in the base...
4138280 Method of manufacture of zener diodes  
A method of manufacture of a zener diode with a given breakdown voltage is disclosed wherein the resistivity of the initial wafer is measured before diffusion of a junction in the wafer, and a...
4089712 Epitaxial process for the fabrication of a field effect transistor having improved threshold stability  
An improved field effect transistor device in a monocrystalline semiconductor body provided with source and drain regions and a gate electrode disposed over the channel between the source and drain...
4060432 Method for manufacturing nuclear radiation detector with deep diffused junction  
Germanium radiation detectors are manufactured by diffusing lithium into high purity p-type germanium. The diffusion is most readily accomplished from a lithium-lead-bismuth alloy at approximately...
3999213 Semiconductor device and method of manufacturing the device  
A semiconductor device particularly suitable for ICs with complementary field effect transistors and/or bipolar circuit elements comprises a semiconductor body having a first type substrate region...
3631310 INSULATED GATE FIELD EFFECT TRANSISTORS  
An insulated gate field effect transistor having in the channel region extending from the source to the drain, at least to the depth of the source, a laterally decreasing concentration of...
3518509 COMPLEMENTARY FIELD-EFFECT TRANSISTORS ON COMMON SUBSTRATE BY MULTIPLE EPITAXY TECHNIQUES  
3493824 INSULATED-GATE FIELD EFFECT TRANSISTORS UTILIZING A HIGH RESISTIVITY SUBSTRATE  
3479233 METHOD FOR SIMULTANEOUSLY FORMING A BURIED LAYER AND SURFACE CONNECTION IN SEMICONDUCTOR DEVICES  
3469155 PUNCH-THROUGH MEANS INTEGRATED WITH MOS TYPE DEVICES FOR PROTECTION AGAINST INSULATION LAYER BREAKDOWN  
3456169 INTEGRATED CIRCUITS USING HEAVILY DOPED SURFACE REGION TO PREVENT CHANNELS AND METHODS FOR MAKING  
3447046 INTEGRATED COMPLEMENTARY MOS TYPE TRANSISTOR STRUCTURE AND METHOD OF MAKING SAME  
3440503 INTEGRATED COMPLEMENTARY MOS-TYPE TRANSISTOR STRUCTURE AND METHOD OF MAKING SAME  
3440502 INSULATED GATE FIELD EFFECT TRANSISTOR STRUCTURE WITH REDUCED CURRENT LEAKAGE  
Matches 1 - 17 out of 17