Matches 1 - 18 out of 18
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7429536 Methods for forming arrays of small, closely spaced features  
Methods of forming arrays of small, densely spaced holes or pillars for use in integrated circuits are disclosed. Various pattern transfer and etching steps can be used, in combination with...
7413981 Pitch doubled circuit layout  
In one embodiment of the present invention, a method for connecting a plurality of bit lines to sense circuitry includes providing a plurality of bit lines extending from a memory array in a first...
7407893 Liquid precursors for the CVD deposition of amorphous carbon films  
Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing...
7396781 Method and apparatus for adjusting feature size and position  
Variations in the pitch of features formed using pitch multiplication are minimized by separately forming at least two sets of spacers. Mandrels are formed and the positions of their sidewalls are...
7393789 Protective coating for planarization  
Various pattern transfer and etching steps can be used to create features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form superimposed,...
7390746 Multiple deposition for integration of spacers in pitch multiplication process  
Pitch multiplication is performed using a two step process to deposit spacer material on mandrels. The precursors of the first step react minimally with the mandrels, forming a barrier layer...
7368362 Methods for increasing photo alignment margins  
Methods and structures are provided for increasing alignment margins when contacting pitch multiplied interconnect lines with other conductive features in memory devices. The portions of the lines...
7361569 Methods for increasing photo-alignment margins  
Methods and structures are provided for increasing alignment margins when contacting pitch multiplied interconnect lines with other conductive features in memory devices. The portions of the lines...
7335462 Method of depositing an amorphous carbon layer  
A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert...
7268054 Methods for increasing photo-alignment margins  
Methods and structures are provided for increasing alignment margins when contacting pitch multiplied interconnect lines with other conductive features in memory devices. The portions of the lines...
7253118 Pitch reduced patterns relative to photolithography features  
Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form...
7223526 Method of depositing an amorphous carbon layer  
A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert...
7151040 Methods for increasing photo alignment margins  
Methods and structures are provided for increasing alignment margins when contacting pitch multiplied interconnect lines with other conductive features in memory devices. The portions of the lines...
7148156 Removable amorphous carbon CMP stop  
A method is provided for processing a substrate including removing amorphous carbon material disposed on a low k dielectric material with minimal or reduced defect formation and minimal dielectric...
7094442 Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon  
A method is provided for forming an amorphous carbon layer, deposited on a dielectric material such as oxide, nitride, silicon carbide, carbon doped oxide, etc., or a metal layer such as tungsten,...
7079740 Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides  
Methods are provided for forming optical devices, such as waveguides, with minimal defect formation. In one aspect, the invention provides a method for forming a waveguide structure on a substrate...
7064078 Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme  
A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as...
6875664 Formation of amorphous carbon ARC stack having graded transition between amorphous carbon and ARC material  
A method of forming an integrated circuit using an amorphous carbon hard mask involves providing an amorphous carbon material layer above a layer of conductive material and providing an...
Matches 1 - 18 out of 18