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7369379 |
Methods, circuits, and applications using a resistor and a Schottky diode
A combination of a current limiting resistor and a clamping Schottky diode prevent substantial forward biasing of a pn junction associated with a pad in a snapback device during normal operation,...
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7221021 |
Method of forming high voltage devices with retrograde well
A high voltage device with retrograde well is disclosed. The device comprises a substrate, a gate region formed on the substrate, and a retrograde well placed in the substrate next to the gate...
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7187000 |
High performance tunneling-biased MOSFET and a process for its manufacture
A semiconductor structure and a method for its manufacture are provided. In one example, the structure includes a well region doped with a first type dopant (e.g., a P-type or N-type dopant). A...
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7154136 |
Isolation structures for preventing photons and carriers from reaching active areas and methods of formation
Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm...
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7075763 |
Methods, circuits, and applications using a resistor and a Schottky diode
A combination of a current limiting resistor and a clamping Schottky diode prevent substantial forward biasing of a pn junction associated with a pad in a snapback device during normal operation,...
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6869844 |
Method and structure for protecting NROM devices from induced charge damage during device fabrication
A structure for protecting an NROM from induced charge damage during device fabrication is described. The structure provides a discharge path for charge accumulated on the polygate layer during...
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6838710 |
Compound semiconductor protection device for low voltage and high speed data lines
The invention relates to the protection of devices in a monolithic chip fabricated from an epitaxial wafer, such as a wafer for a Group III-V compound semiconductor or a wafer for a Group IV...
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