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7405444 |
Micro-mechanically strained semiconductor film
A semiconductor structure embodiment comprises a semiconductor membrane with local strained areas. The membrane with local strained areas is formed by a process including performing a local...
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7394111 |
Strained Si/SiGe structures by ion implantation
One aspect of this disclosure relates to a method for forming a strained silicon over silicon germanium (Si/SiGe) structure. In various embodiments, germanium ions are implanted into a silicon...
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7391096 |
STI structure
An STI structure and fabricating method thereof are disclosed. The STI fabricating method comprises forming a pad oxide layer and a first nitride layer on a substrate. A trench is formed by etching...
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7368790 |
Strained Si/SiGe/SOI islands and processes of making same
A process of making a strained silicon-on-insulator structure is disclosed. A recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms a bubble recess under...
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7326597 |
Gettering using voids formed by surface transformation
One aspect of this disclosure relates to a method for creating a gettering site in a semiconductor wafer. In various embodiments, a predetermined arrangement of a plurality of holes is formed in...
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7273788 |
Ultra-thin semiconductors bonded on glass substrates
A method for forming a semiconductor on insulator structure includes providing a glass substrate, providing a semiconductor wafer, and performing a bonding cut process on the semiconductor wafer...
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7271445 |
Ultra-thin semiconductors bonded on glass substrates
A method for forming a semiconductor on insulator structure includes providing a glass substrate, providing a semiconductor wafer, and performing a bonding cut process on the semiconductor wafer...
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7262428 |
Strained Si/SiGe/SOI islands and processes of making same
A process of making a strained silicon-on-insulator structure is disclosed. A recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms a bubble recess under...
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7260125 |
Method of forming mirrors by surface transformation of empty spaces in solid state materials
A multi-layered reflective mirror formed of spaced-apart plate-shaped empty space patterns formed within a substrate is disclosed. The plurality of plate-shaped empty space patterns are formed by...
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7202530 |
Micro-mechanically strained semiconductor film
One aspect of the present subject matter relates to a method for forming strained semiconductor film. In various embodiments, a single crystalline semiconductor film is formed on a substrate...
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7198974 |
Micro-mechanically strained semiconductor film
One aspect of the present subject matter relates to a method for forming strained semiconductor film. In various embodiments, a single crystalline semiconductor film is formed on a substrate...
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7164188 |
Buried conductor patterns formed by surface transformation of empty spaces in solid state materials
A plurality of buried conductors and/or buried plate patterns formed within a monocrystalline substrate is disclosed. A plurality of empty-spaced buried patterns are formed by drilling holes in the...
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7153753 |
Strained Si/SiGe/SOI islands and processes of making same
A process of making a strained silicon-on-insulator structure is disclosed. A recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms a bubble recess under...
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7142577 |
Method of forming mirrors by surface transformation of empty spaces in solid state materials and structures thereon
A multi-layered reflective mirror formed of spaced-apart plate-shaped empty space patterns formed within a substrate is disclosed. The plurality of plate-shaped empty space patterns are formed by...
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7115480 |
Micromechanical strained semiconductor by wafer bonding
One aspect disclosed herein relates to a method for forming a strained semiconductor structure. In various embodiments of the method, a number of recesses are formed in a surface of a first...
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7054532 |
Three-dimensional photonic crystal waveguide structure and method
A waveguide structure formed with a three-dimensional (3D) photonic crystal is disclosed. The 3D photonic crystal comprises a periodic array of voids formed in a solid substrate. The voids are...
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7045874 |
Micromechanical strained semiconductor by wafer bonding
One aspect disclosed herein relates to a method for forming a strained semiconductor structure. In various embodiments of the method, a number of recesses are formed in a surface of a first...
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7041575 |
Localized strained semiconductor on insulator
One aspect of this disclosure relates to a method for straining a transistor body region. In various embodiments, oxygen ions are implanted to a predetermined depth in a localized region of a...
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7008854 |
Silicon oxycarbide substrates for bonded silicon on insulator
A method for forming a semiconductor on insulator structure includes forming a semiconductor layer on an insulating substrate, where the substrate is a different material than the semiconductor...
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6987037 |
Strained Si/SiGe structures by ion implantation
One aspect of this disclosure relates to a method for forming a strained silicon over silicon germanium (Si/SiGe) structure. In various embodiments, germanium ions are implanted into a silicon...
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6929984 |
Gettering using voids formed by surface transformation
One aspect of this disclosure relates to a method for creating a gettering site in a semiconductor wafer. In various embodiments, a predetermined arrangement of a plurality of holes is formed in...
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6898362 |
Three-dimensional photonic crystal waveguide structure and method
A waveguide structure formed with a three-dimensional (3D) photonic crystal is disclosed. The 3D photonic crystal comprises a periodic array of voids formed in a solid substrate. The voids are...
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6721956 |
Interactive information services system and associated method for capturing transaction data
A method and system are provided to permit a network operator to capture transaction data relating to transactions between a subscriber and a service provider that are conducted via a...
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