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DE102019217286A1 Method and device for detecting a facet area, wafer production method and laser processing device  
A method of detecting a facet area includes: a fluorescent luminance detection step of detecting a fluorescent luminance characteristic of SiC by irradiating an SiC ingot with excitation light...
DE102019216551A1 WAFER MANUFACTURING DEVICE  
A wafer manufacturing apparatus has an ingot grinding unit that grinds the top surface of an ingot to planarize the top surface, a laser irradiation unit that detects the focus of a laser beam...
DE102019214897A1 DIAMOND SUBSTRATE PRODUCTION PROCESS  
A diamond substrate manufacturing method includes a step of forming a band-shaped separation layer with depositing a laser beam on a diamond ingot by moving the diamond ingot relative to each...
DE102019213984A1 WAFER MANUFACTURING METHOD AND LASER MACHINING DEVICE  
A wafer manufacturing method includes a facet area detection step with detecting a facet area from an upper surface of a SiC ingot, a coordinate setting step with setting the X and Y coordinates...
DE102014107238B4 Semiconductor wafer treatment process  
Semiconductor wafer treatment process, in which a wafer stack (7) consisting of a plurality of semiconductor wafers (2) lying on top of one another is provided in such a way that at least one...
DE102019003331A1 SEMICONDUCTOR SUBSTRATE MANUFACTURING SYSTEMS AND RELATED METHODS  
Implementations of a method of separating a wafer from a rod that includes semiconductor material may include: creating a damage layer in a rod that includes semiconductor material. The rod may...
DE102019207552A1 Transfer template and a cutting blade change method  
Disclosed is a transfer template for use in transferring a new cutting blade as a replacement component to a processing unit, wherein a cutting device comprises a chuck table holding a workpiece,...
DE102019003329A1 SEMICONDUCTOR SUBSTRATE AGGREGATION SYSTEM AND METHOD OF PROCESSING  
Implementations of methods of thinning a semiconductor substrate may include providing a semiconductor substrate having a first surface and a second surface opposite the first surface, wherein the...
DE102019204741A1 Method for producing a wafer  
A method for producing a hexagonal single crystal ingot wafer comprises the steps of planarizing one end side of the hexagonal single crystal ingot, forming a stripping layer in the hexagonal...
DE102018001327A1 Method for generating short subcritical cracks in solids  
The present invention relates to a method for producing modifications (9) inside a solid (1). The method comprises introducing laser radiation (14) of a laser (29) into the interior of the solid...
DE102018000748A1 Production of a thin substrate layer  
A process for producing a thin substrate layer (30) of at most 100 μm by stress application by means of a stressor layer structure (10) on an ingot (20), wherein the stressor layer structure (10)...
DE102019200729A1 Wafer manufacturing process and wafer manufacturing device  
There is provided a wafer manufacturing method for producing a wafer of hexagonal single crystal ingot, the method comprising a separation layer forming step of positioning a focal point of a...
DE102018203741A1 Block clamping device and wire sawing device for slicing the block having it  
According to the present invention, there is provided a block clamp device comprising: a clamp body constructed to have a holder mounting groove and a cavity; a fixing member configured to hold...
DE102018221394A1 Wafer-making device and transport tray  
A wafer manufacturing apparatus includes: an ingot grinding unit configured to grind and planarize an upper surface of an ingot held by a first holding table; a laser applying unit configured to...
DE10157433B4 A method of cutting a rare earth alloy, a method of manufacturing a rare earth magnet, and a wire saw apparatus  
Method for cutting a workpiece (50) using a wire (20) with abrasive grains (24), which are fixed to a core wire (22), wherein the workpiece (50) is cut with a running wire (20) in such a state...
DE102018219942A1 SiC ingot formation process  
A SiC ingot forming method includes: a holding step of holding a cut portion of a SiC primitive ingot cut from a SiC ingot growth base by a chuck table; a planarization step of grinding an end...
DE102018219424A1 WAFING MANUFACTURING METHOD AND WAFING MAKING DEVICE  
A wafer manufacturing method for producing a hexagonal single crystal ingot wafer is disclosed. The wafer manufacturing method includes: a planarization step of planarizing an upper surface of the...
DE102017009136A1 Method of separating and detaching slices from a brittle of a brittle-hard material  
The invention relates to methods for separating and detaching slices from a brittle of a brittle-hard material with defects introduced as a plane damage zone. The methods are characterized in...
DE102017007586A1 Manufacturing plant for separating wafers from donor substrates  
The present invention relates to a manufacturing plant (40) for detaching wafers (2) from donor substrates (4). According to the invention, the production system comprises at least one analysis...
DE102017007585A1 Apparatus and method for pressurizing stress-generating layers to improve a separation tear  
The present invention relates according to claim 1 to a method for separating at least one solid state layer (1), in particular a solid state disk, from a donor substrate (2). The method according...
DE102016220523B4 Apparatus and method for analyzing optically detectable inhomogeneities on the surface of wafers  
Device (14) for analyzing optically detectable inhomogeneities on the surface of wafers which have been separated from an ingot (4) by means of a wire saw (5) 1.1. an illumination device (20) for...
DE112011100105B4 DIVIDING FOR A SEMICONDUCTOR SUBSTRATE  
A method of cleaving a layer (601) from a block (201) of a semiconductor substrate, the method comprising: Electroplating a nickel-containing adhesive layer (301) on the block (201) of the...
DE102018212588A1 Wafer processing method  
A cutting method is provided. The cutting method includes: a holding member arranging step for arranging a dividing band on a back surface of a wafer; a holding step of holding the wafer to a...
DE102018210573A1 LASER PROCESSING DEVICE AND LASER PROCESSING METHOD  
Disclosed herein is a laser processing method which is a selection step for a single crystal silicon wafer for selecting a single crystal silicon wafer as a workpiece, a selecting step for a laser...
DE102018210110A1 WAFER PRODUCTION DEVICE  
A wafer manufacturing apparatus for manufacturing a SiC wafer from a SiC single crystal ingot includes an ingot grinding unit, a laser applying unit, which has a pulsed laser beam having a...
DE102018205905A1 SiC wafer manufacturing process  
There is disclosed herein an SiC wafer manufacturing method of manufacturing a SiC wafer from a SiC single crystal ingot. The SiC wafer manufacturing method includes a separation layer forming...
DE102017003830A1 Process for wafer production with defined aligned modification lines  
The present invention thus relates to a method for separating at least one solid state layer (2) from a donor substrate (1). According to the invention, the method preferably comprises at least...
DE102018202042A1 SIC WAFER MANUFACTURING METHOD  
There is disclosed herein an SiC wafer manufacturing method of manufacturing a SiC wafer from a SiC single crystal ingot. The SiC wafer manufacturing method includes a wafer manufacturing step of...
DE102018201298A1 SiC wafer manufacturing process  
There is disclosed herein an SiC wafer manufacturing method of manufacturing a SiC single crystal ingot wafer. The SiC wafer manufacturing method includes an end surface planarization step of...
DE102018201209A1 LASER PROCESSING DEVICE  
There is disclosed herein a laser processing apparatus for forming a separation layer inside an ingot by applying a laser beam to an end surface of the ingot in the state where the focal point of...
DE102017222047A1 SIC WAFER MANUFACTURING METHOD  
There is disclosed herein an SiC wafer manufacturing method of manufacturing a SiC wafer from a SiC single crystal ingot. The SiC wafer manufacturing method includes a separation layer forming...
DE102016220523A1 Apparatus and method for analyzing optically detectable inhomogeneities on the surface of wafers  
In a method for analyzing optically detectable inhomogeneities on the surface (2) of wafers (3), an image of the surface (2) of the wafer (3) is analyzed by means of a computing device (26).
DE102016117921A1 Method for splitting semiconductor devices and semiconductor device  
A method of cleaving a semiconductor wafer includes introducing hydrogen atoms into at least one cleavage region of a semiconductor wafer. The cleavage region comprises a concentration of nitrogen...
DE102017003698B3 Production of a thin substrate layer  
A method for producing a thin substrate layer (30) having a thickness of at most 100 .mu.m, by the substrate layer (30) is detached from the ingot (20) by generating a tensile stress on an ingot...
DE102017209187A1 Wafer manufacturing method  
There is disclosed herein a wafer manufacturing method of manufacturing a SiC wafer from a single crystal SiC ingot. The wafer manufacturing method includes a parting surface forming step of...
DE102017208953A1 LASER PROCESSING DEVICE AND WAFING MANUFACTURING METHOD  
A laser processing apparatus for manufacturing a GaN wafer from a GaN ingot includes a laser beam irradiation unit configured to apply a laser beam having a wavelength capable of passing through...
DE102017206401A1 METHOD FOR WORKING A SIC AND WAFER  
A method for processing a SiC wafer comprises a stripping-raising step with irradiating the SiC wafer with a laser beam having a wavelength that transmits SiC to form a stripping level in a region...
DE102017206178A1 Wafer manufacturing processes and detection method for a machining feed  
A wafer manufacturing method comprising a manufacturing a wafer from an ingot includes a detection step for a machining feed with a confirming whether a direction in which a c-axis of the ingot is...
DE102008059359B4 An apparatus for detecting the edge of a workpiece and laser beam processing machine  
and the reflection light detection means (64) the edge of the workpiece (W) based on a positional difference between the reflection light (LBB1), which is obtained when the of the...
DE112015005680T5 Wafer Group, wafer manufacturing apparatus and wafer manufacturing technology  
An object of the present invention is to provide a wafer group that facilitates ensuring a uniformity of products which have been produced from the wafer group, whose composition varies between...
DE102016112049B3 METHOD OF PRODUCING CZ-SILICON WAFERS AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE  
According to a process for producing CZ silicon wafer is a CZ silicon ingot or a CZ silicon Ingotabschnitt in CZ silicon wafer cut (S100). A parameter of at least two of the CZ silicon wafer is...
DE102016119111A1 METHOD FOR PRODUCING SEMICONDUCTOR RESERVES AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE  
One embodiment of a method for manufacturing semiconductor wafers comprises determining at least one material property for at least two positions of a semiconductor ingot (S100). A notch or flat...
DE112015001723T5 Transport system and procedures  
The invention relates to a system for transporting workpieces (3, 3 '), such as wafers or solar cells. The system consists of a mainly vertical (10) and a downstream mainly horizontal (12)...
DE102016114448A1 Single crystal ingot, semiconductor wafer and method for producing semiconductor wafers  
One embodiment of a method for manufacturing semiconductor wafers includes forming a notch or flat in a semiconductor ingot extending along an axial direction (S100). A plurality of markings are...
DE19947015B4 A method for cutting and separating a bent CSP plate with considerable bending into individual small parts  
A method of cutting and separating a bent CSP plate (10) with substantial bending into individual small parts by means of a cutting machine (13) having at least one clamping table (14) for holding...
DE102016206056A1 Cutting process for a workpiece  
A cutting method of a workpiece is provided. The cutting method of a workpiece includes an attaching step for attaching an adhesive tape to the front or back of a workpiece, a forming step of...
DE112014006038T5 A method for processing a frangible panel and apparatus for processing a plate Fragile  
[MEANS FOR SOLVING] A method for processing a frangible panel includes a cutting step of forming a score line in a top surface of a fragile plate by moving a cutting device, which is pressed...
DE112014006024T5 A method for processing a frangible panel and apparatus for processing a frangible panel  
A method for processing a frangible panel includes a breaking step, in which a pressure member for pressing a surface of the frangible panel and a support member are used to support a rear surface...
DE102015103118A1 Splitting procedure and use of a material in a splitting procedure  
The invention relates to a splitting procedure for dividing a solid starting material in at least two solid-sections and the use of a material in such a splitting procedure. To increase the...
DE102015217288A1 SiC ingot cutting process  
Herein, a SiC ingot cutting method is disclosed which includes: an initial separation layer forming step for scanning a focal point of a laser beam parallel to an end surface of the SiC ingots...

Matches 1 - 50 out of 316 1 2 3 4 5 6 7 >