Title:
Power semiconductor device
United States Patent D827590


Inventors:
Hayashida, Yukimasa (Tokyo, JP)
Iura, Shinichi (Tokyo, JP)
Uemura, Hitoshi (Tokyo, JP)
Oya, Daisuke (Tokyo, JP)
Hatori, Kenji (Tokyo, JP)
Sakai, Yasuhiro (Tokyo, JP)
Tsuda, Ryo (Tokyo, JP)
Date, Ryutaro (Tokyo, JP)
Application Number:
29/558550
Publication Date:
09/04/2018
Filing Date:
03/18/2016
Assignee:
MITSUBISHI ELECTRIC CORPORATION (Tokyo, JP)
Primary Class:
Other Classes:
D13/147
International Classes:
(IPC1-7): 1303
Field of Search:
D13/133, D13/146, D13/147, D13/154, D13/155, D13/182, D13/184, D13/199
View Patent Images:
US Patent References:
D798832Power semiconductor deviceOctober, 2017HayashidaD13/182
D476622Portion of a power converterJuly, 2003AndoD13/118
D476959Semiconductor deviceJuly, 2003YamadaD13/182
D475012Portion of a power converterMay, 2003AndoD13/118
D469059Power converterJanuary, 2003AndoD13/110
D467869Portion of power converterDecember, 2002AndoD13/110
D357672Hybrid integrated circuit for electric power controlApril, 1995TerasawaD13/182



Primary Examiner:
Bui, Daniel
Attorney, Agent or Firm:
Studebaker & Brackett PC
Claims:
CLAIM

1. The ornamental design for the power semiconductor device, as shown and described.

Description:

FIG. 1 is a perspective view of the front, left and bottom sides of a power semiconductor device showing our new design;

FIG. 2 is a perspective view of the front, right and top sides thereof;

FIG. 3 is a front view thereof;

FIG. 4 is a rear view thereof;

FIG. 5 is a left side view thereof;

FIG. 6 is a right side view thereof;

FIG. 7 is a top view thereof;

FIG. 8 is a bottom view thereof;

FIG. 9 is an end view of cutting part at 9-9, with omitting the interior mechanism thereof; and,

FIG. 10 is an end view of cutting part at 10-10, with omitting the interior mechanism thereof.

The broken line showing of unclaimed portion of the power semiconductor device is for the purpose of illustrating environmental structure only and forms no part of the claimed design.