Power semiconductor device
United States Patent D798832

Hayashida, Yukimasa (Tokyo, JP)
Iura, Shinichi (Tokyo, JP)
Uemura, Hitoshi (Tokyo, JP)
Oya, Daisuke (Tokyo, JP)
Hatori, Kenji (Tokyo, JP)
Sakai, Yasuhiro (Tokyo, JP)
Tsuda, Ryo (Tokyo, JP)
Date, Ryutaro (Tokyo, JP)
Application Number:
Publication Date:
Filing Date:
Primary Class:
International Classes:
(IPC1-7): 1303
Field of Search:
D13/182, 257/678, 257/684, 257/690, 257/691, 361/679.01, 361/713, 361/728, 361/736, 361/760, 361/761, 361/772, 361/775, 361/783, 361/820, 174/250, 174/253, 438/15, 438/25, 438/26, 438/51, 438/55, 438/63, 438/64
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US Patent References:
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Primary Examiner:
Oswecki, Elizabeth J.
Attorney, Agent or Firm:
Studebaker & Brackett PC

1. The ornamental design for a power semiconductor device, as shown and described.


FIG. 1 is a front, left side, bottom perspective view of a power semiconductor device, showing our new design;

FIG. 2 is a front, right side, top perspective view thereof;

FIG. 3 is a front view thereof;

FIG. 4 is a rear view thereof;

FIG. 5 is a left side view hereof;

FIG. 6 is a right side view thereof;

FIG. 7 is a top view thereof;

FIG. 8 is a bottom view thereof;

FIG. 9 is a cross sectional view taken along line 9-9 in FIG. 3; and,

FIG. 10 is another cross sectional view taken along line 10-10 in FIG. 3.

The broken lines in FIG. 4 illustrate unclaimed portions of the power semiconductor device and form no part of the claimed design.