Title:
Power semiconductor device
United States Patent D798832
Inventors:
Hayashida, Yukimasa (Tokyo, JP)
Iura, Shinichi (Tokyo, JP)
Uemura, Hitoshi (Tokyo, JP)
Oya, Daisuke (Tokyo, JP)
Hatori, Kenji (Tokyo, JP)
Sakai, Yasuhiro (Tokyo, JP)
Tsuda, Ryo (Tokyo, JP)
Date, Ryutaro (Tokyo, JP)
Application Number:
29/558572
Publication Date:
10/03/2017
Filing Date:
03/18/2016
Assignee:
MITSUBISHI ELECTRIC CORPORATION (Tokyo, JP)
Primary Class:
International Classes:
(IPC1-7): 1303
Field of Search:
D13/182, 257/678, 257/684, 257/690, 257/691, 361/679.01, 361/713, 361/728, 361/736, 361/760, 361/761, 361/772, 361/775, 361/783, 361/820, 174/250, 174/253, 438/15, 438/25, 438/26, 438/51, 438/55, 438/63, 438/64
View Patent Images:
US Patent References:
D775593Power semiconductor moduleJanuary, 2017EdenharterD13/182
D776071Power semiconductor moduleJanuary, 2017EdenharterD13/182
D773412Semiconductor deviceDecember, 2016YoneyamaD13/182
D773413Semiconductor deviceDecember, 2016YoneyamaD13/182
D774479Semiconductor moduleDecember, 2016SoyanoD13/182
D775091Power semiconductor moduleDecember, 2016EdenharterD13/182
D772184Semiconductor moduleNovember, 2016SoyanoD13/182
D769834Semiconductor deviceOctober, 2016KawaseD13/182
D766851Semiconductor deviceSeptember, 2016YoneyamaD13/182
D767516Semiconductor deviceSeptember, 2016YoneyamaD13/182
D762597Power semiconductor moduleAugust, 2016BertalanD13/182
D762185Power semiconductor moduleJuly, 2016MuehlensiepD13/182
D759604Semiconductor deviceJune, 2016YoneyamaD13/182
D754084Semiconductor deviceApril, 2016KawaseD13/182
D748595Power semiconductor moduleFebruary, 2016BertalanD13/182
D721048Semiconductor moduleJanuary, 2015NakamuraD13/182
D721340Semiconductor moduleJanuary, 2015NakamuraD13/182
D712853Semiconductor moduleSeptember, 2014NakamuraD13/182
D710317Semiconductor deviceAugust, 2014ChenD13/182
D710318Semiconductor deviceAugust, 2014ChenD13/182
D710319Semiconductor deviceAugust, 2014ChenD13/182
D704670Semiconductor deviceMay, 2014ChenD13/182
D704671Semiconductor deviceMay, 2014ChenD13/182
D703625Power semiconductor moduleApril, 2014LimD13/182
D686174Semiconductor deviceJuly, 2013SoyanoD13/182
D653633SemiconductorFebruary, 2012SoyanoD13/182
D653634SemiconductorFebruary, 2012SoyanoD13/182
D606951Semiconductor deviceDecember, 2009SoyanoD13/182
D587662Semiconductor deviceMarch, 2009SoutomeD13/182
D589012Semiconductor deviceMarch, 2009SoyanoD13/182
D476959Semiconductor deviceJuly, 2003YamadaD13/182
D441726Semiconductor elementMay, 2001SofueD13/182
D364383Semi-conductor element with terminal casingNovember, 1995YamadaD13/146
D364384Semi-conductor element with terminal casingNovember, 1995ShimizuD13/146
D364385Semi-conductor element with terminal casingNovember, 1995ShimizuD13/146
5347160Power semiconductor integrated circuit packageSeptember, 1994Sutrina257/678
Primary Examiner:
Oswecki, Elizabeth J.
Attorney, Agent or Firm:
Studebaker & Brackett PC
Claims:
CLAIM

1. The ornamental design for a power semiconductor device, as shown and described.

Description:

FIG. 1 is a front, left side, bottom perspective view of a power semiconductor device, showing our new design;

FIG. 2 is a front, right side, top perspective view thereof;

FIG. 3 is a front view thereof;

FIG. 4 is a rear view thereof;

FIG. 5 is a left side view hereof;

FIG. 6 is a right side view thereof;

FIG. 7 is a top view thereof;

FIG. 8 is a bottom view thereof;

FIG. 9 is a cross sectional view taken along line 9-9 in FIG. 3; and,

FIG. 10 is another cross sectional view taken along line 10-10 in FIG. 3.

The broken lines in FIG. 4 illustrate unclaimed portions of the power semiconductor device and form no part of the claimed design.