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7598516 Self-aligned process for nanotube/nanowire FETs  
A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based...
7589403 Lead structure for a semiconductor component and method for producing the same  
A lead structure for a semiconductor component includes: external leads for external connections outside a plastic housing composition, internal leads for electrical connections within the plastic...
7586130 Vertical field effect transistor using linear structure as a channel region and method for fabricating the same  
A vertical field effect transistor includes: an active region with a bundle of linear structures functioning as a channel region; a lower electrode, functioning as one of source and drain regions;...
7583526 Random access memory including nanotube switching elements  
Random access memory including nanotube switching elements. A memory cell includes first and second nanotube switching elements and an electronic memory. Each nanotube switching element includes...
7582534 Chemical doping of nano-components  
A method is provided for doping nano-components, including nanotubes, nanocrystals and nanowires, by exposing the nano-components to an organic amine-containing dopant. A method is also provided...
7579281 Transistor assembly and method of its fabrication  
A transistor assembly with semiconductor material vertically introduced into micro holes ( 4 ) in a pliable a film laminate consisting of two plastic films ( 1, 3 ) with a metal layer ( 2 ) located...
7579223 Semiconductor apparatus and process for fabricating the same  
A semiconductor apparatus in which a conducting path formed from organic semiconductor molecules as a material has a novel structure and exhibits high mobility, and a manufacturing method for...
7576410 Power transistor  
A power transistor has a source region, a drain region, a semiconductor body arranged between the source region and the drain region, and a plurality of nanotubes. The plurality of nanotubes are...
7576355 Electronic device, field effect transistor including the electronic device, and method of manufacturing the electronic device and the field effect transistor  
Provided is an electronic device, a field effect transistor having the electronic device, and a method of manufacturing the electronic device and the field effect transistor. The electronic device...
7544546 Formation of carbon and semiconductor nanomaterials using molecular assemblies  
The invention is directed to a method of forming carbon nanomaterials or semiconductor nanomaterials. The method comprises providing a substrate and attaching a molecular precursor to the...
7542334 Bistable latch circuit implemented with nanotube-based switching elements  
A nanotube-based switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in...
7538337 Nanowire semiconductor device  
Semiconductor devices may be fabricated using nanowires. In an example embodiment, a conductive gate may be used to control conduction along the nanowires, in which case one of the contacts is a...
7535016 Vertical carbon nanotube transistor integration  
A hybrid semiconductor structure which includes a horizontal semiconductor device and a vertical carbon nanotube transistor, where the vertical carbon nanotube transistor and the horizontal...
7535014 Integrally gated carbon nanotube field ionizer device and method of manufacture therefor  
A field ionization device can include a first insulator layer on a first side of a substrate, a conductive gate layer on the first insulator layer, a cavity in the substrate, a portion of first...
7534675 Techniques for fabricating nanowire field-effect transistors  
Techniques for the fabrication of field-effect transistors (FETs) having nanowire channels are provided. In one aspect, a method of fabricating a FET is provided comprising the following steps. A...
7521275 Free-standing electrostatically-doped carbon nanotube device and method for making same  
A method and associated structure for forming a free-standing electrostatically-doped carbon nanotube device is described. The method includes providing a carbon nanotube on a substrate in such a...
7498215 Method of producing product including silicon wires  
Provided is a product including a group of a plurality of wires, in which longitudinal directions of the wires are arranged in one direction, and a method of producing the same. The longitudinal...
7498084 Macromolecular structure, functional device having the same, transistor, and display apparatus using the same  
A functional device includes a pair of electrodes 1 and 4 and a macromolecular structure including a hole-conducting layer 5 and an electron-conducting layer 2 . The macromolecular structure...
7492624 Method and device for demultiplexing a crossbar non-volatile memory  
A method and device demultiplex a crossbar non-volatile memory that includes a first array of row nano-wires and a second array of column nano-wires, which cross the row nano-wires at a plurality...
7485908 Insulated gate silicon nanowire transistor and method of manufacture  
An insulated gate silicon nanowire transistor amplifier structure is provided and includes a substrate formed of dielectric material. A patterned silicon material may be disposed on the substrate...
7473943 Gate configuration for nanowire electronic devices  
Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at...
7465612 Fabricating method for thin film transistor substrate and thin film transistor substrate using the same  
A thin film transistor substrate and its fabrication method are discussed. According to an embodiment, the fabricating method of a thin film transistor substrate includes forming a gate electrode...
7465595 Quantum device, manufacturing method of the same and controlling method of the same  
By bringing a tip of an AFM into contact with the surface of a GaAs substrate or an AlGaAs substrate, for example, applying a negative bias to the tip, and applying a positive bias to the GaAs...
7452759 Carbon nanotube field effect transistor and methods for making same  
A structure and fabrication process for a carbon nanotube field effect transistor is disclosed herein. In one embodiment, a method for forming a carbon nanotube transistor starts with a substrate...
7447055 Multiplexer interface to a nanoscale-crossbar  
Various embodiments of the present invention are directed to electronic means for reading the content of a nanowire-crossbar memory. In one embodiment of the present invention, a microscale or...
7446044 Carbon nanotube switches for memory, RF communications and sensing applications, and methods of making the same  
Switches having an in situ grown carbon nanotube as an element thereof, and methods of fabricating such switches. A carbon nanotube is grown in situ in mechanical connection with a conductive...
7439562 Process for modifying at least one electrical property of a nanotube or a nanowire and a transistor incorporating it  
The present invention concerns a method for modyfing at least an electronic property of a carbon nanotube or nanowire comprising exposing said nanotube or nanowire to an acid having the formula (I)...
7436033 Tri-gated molecular field effect transistor and method of fabricating the same  
A tri-gated molecular field effect transistor includes a gate electrode formed on a substrate and having grooves in a source region, a drain region and a channel region, and at least one molecule...
7423285 Wire cross-point fet structure  
The difficulty of miniaturization of large-scale integrated circuits in electric devices based on the conventional techniques involving three-dimensional device structures or the introduction of...
7411241 Vertical type nanotube semiconductor device  
A vertical type nanotube semiconductor device including a nanotube bit line, disposed on a substrate and in parallel with the substrate and composed of a nanotube with a conductive property, and a...
7410853 Method of forming a nanowire and method of manufacturing a semiconductor device using the same  
In a method of forming a nanowire in a semiconductor device, a trench is formed by partially etching a bulk semiconductor substrate. An insulation layer pattern is formed on the substrate to fill...
7405129 Device comprising doped nano-component and method of forming the device  
A device comprising a doped semiconductor nano-component and a method of forming the device are disclosed. The nano-component is one of a nanotube, nanowire or a nanocrystal film, which may be...
7402506 Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby  
A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said...
7394118 Chemical sensor using semiconducting metal oxide nanowires  
Indium oxide nanowires are used for determining information about different chemicals or Biologics. Chemicals are absorbed to the surface of the nanowires, and cause the semiconducting...
7390947 Forming field effect transistors from conductors  
A nanotube transistor, such as a carbon nanotube transistor, may be formed with a top gate electrode and a spaced source and drain. Conduction along the transistor from source to drain is...
7385231 Porous thin-film-deposition substrate, electron emitting element, methods of producing them, and switching element and display element  
A method of producing a porous thin-film-deposition substrate, which has the steps of: placing onto a substrate that has an electrostatic charge on its surface, fine particles with a surface...
7359888 Molecular-junction-nanowire-crossbar-based neural network  
A method for configuring nanoscale neural network circuits using molecular-junction-nanowire crossbars, and nanoscale neural networks produced by this method. Summing of weighted inputs within a...
7339184 Systems and methods for harvesting and integrating nanowires  
The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires...
7323730 Optically-configurable nanotube or nanowire semiconductor device  
The invention relates to a semiconductor device comprising at least two electrodes and at least one nanotube or nanowire, in particular a carbon nanotube or nanowire, the device including at least...
7307448 Interconnectable nanoscale computational stages  
Embodiments of the present invention implement computing circuits comprising a number of interconnectable nanoscale computational stages. Each nanoscale computational stage includes: (1) a...
7307271 Nanowire interconnection and nano-scale device applications  
A nano-colonnade structure-and methods of fabrication and interconnection thereof utilize a nanowire column grown nearly vertically from a (111) horizontal surface of a semiconductor layer to...
7301199 Nanoscale wires and related devices  
The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various...
7297615 Si nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same  
A silicon nanowire substrate having a structure in which a silicon nanowire film having a fine line-width is formed on a substrate, a method of manufacturing the same, and a method of manufacturing...
7294519 Semiconductor light-emitting device and method of manufacturing the same  
Provided are a semiconductor light-emitting device having nano-needles and a method of manufacturing the same. The provided semiconductor light-emitting device improves the extraction efficiency of...
7276424 Fabrication of aligned nanowire lattices  
Methodologies associated with fabricating aligned nanowire lattices are described. One exemplary method embodiment includes providing a twist wafer bonded thin single crystal semiconductor film and...
7257022 Nanocrystal write once read only memory for archival storage  
Structures and methods for write once read only memory employing charge trapping are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor...
7253431 Method and apparatus for solution processed doping of carbon nanotube  
A method is provided for doping a carbon nanotube. The method comprises exposing the nanotube to a one-electron oxidant in a solution phase. A method is also provided for forming a carbon nanotube...
7253065 Self-aligned nanotube field effect transistor and method of fabricating same  
A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the...
7245520 Random access memory including nanotube switching elements  
A random access memory cell includes first and second nanotube switching elements and an electronic memory with cross-coupled first and second inverters. Each nanotube switching element includes a...
7187201 Programmable logic device suitable for implementation in molecular electronics  
Pullup and pulldown structures can be formed using nanoscale programmable junctions. These devices can be integrated into nanoscale circuit designs and can be programmably configured, e.g., desired...
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