Matches 51 - 76 out of 76 < 1 2
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7253431 Method and apparatus for solution processed doping of carbon nanotube  
A method is provided for doping a carbon nanotube. The method comprises exposing the nanotube to a one-electron oxidant in a solution phase. A method is also provided for forming a carbon nanotube...
7245520 Random access memory including nanotube switching elements  
A random access memory cell includes first and second nanotube switching elements and an electronic memory with cross-coupled first and second inverters. Each nanotube switching element includes a...
7187201 Programmable logic device suitable for implementation in molecular electronics  
Pullup and pulldown structures can be formed using nanoscale programmable junctions. These devices can be integrated into nanoscale circuit designs and can be programmably configured, e.g., desired...
7180107 Method of fabricating a tunneling nanotube field effect transistor  
A method of fabricating a tunneling nanotube field effect transistor includes forming in a nanotube an n-doped region and a p-doped region which are separated by an undoped channel region of the...
7176478 Nanotube-based vacuum devices  
New, hybrid vacuum electron devices are proposed, in which the electrons are extracted from the nanotube into vacuum. Each nanotube is either placed on the cathode electrode individually or grown...
7161168 Superlattice nanopatterning of wires and complex patterns  
Fabrication of metallic or non-metallic wires with nanometer widths and nanometer separation distances without the use of lithography. Wires are created in a two-step process involving forming the...
7115916 System and method for molecular optical emission  
A light emitting device comprises a gate electrode, a channel comprising a molecule for electrically stimulated optical emission, wherein the molecule is disposed within an effective range of the...
7112816 Carbon nanotube sensor and method of producing the same  
A carbon nanotube sensor and a method of producing the carbon nanotube sensor are disclosed. The sensor detects small particles and molecules. The sensor includes a gate, a source and a drain...
7105874 Single electron transistor having memory function  
A single electron transistor having a memory function and a fabrication method thereof are disclosed. In the single electron transistor, a first substrate and an insulation film are sequentially...
7102157 Nanotube-based vacuum devices  
New, hybrid vacuum electronic devices are proposed, in which the electrons are extracted from the nanotube into vacuum. Each nanotube is either placed on the cathode electrode individually or grown...
7087920 Nanowire, circuit incorporating nanowire, and methods of selecting conductance of the nanowire and configuring the circuit  
A nanowire includes a single crystalline semiconductor material having an exterior surface and an interior region and at least one dopant atom. At least a portion of the nanowire thermally switches...
7015546 Deterministically doped field-effect devices and methods of making same  
Deterministically doped field-effect devices and methods of making same. One or more dopant atoms, also referred to as impurities or impurity atoms, are arranged in the channel region of a device...
7001805 Method for fabricating n-type carbon nanotube device  
A method for fabricating an n-type carbon nanotube device, characterized in that thermal annealing and plasma-enhanced chemical vapor-phased deposition (PECVD) are employed to form a non-oxide gate...
6982903 Field effect devices having a source controlled via a nanotube switching element  
Field effect devices having a source controlled via a nanotube switching element. Under one embodiment, a field effect device includes a source region and a drain region of a first semiconductor...
6969504 Electrical conductors comprising single-wall carbon nanotubes  
The present invention concerns electrical conductors comprising armchair single-wall carbon nanotubes. Such electrical conductors made by the invention are metallic, i.e., they will conduct...
6962839 Apparatus and manufacturing process of carbon nanotube gate field effect transistor  
The present invention generally relates to an apparatus and method of carbon nanotube (CNT) gate field effect transistor (FET), which is used to replace the current metal gate of transistor for...
6940088 Molecular structures comprising single wall carbon nanotubes  
The present invention provides novel molecular structures, which are suitable for use as electrical devices. In one example, the molecular structure comprises a central nanotube of a zigzag type (...
6921575 Carbon nanotube structures, carbon nanotube devices using the same and method for manufacturing carbon nanotube structures  
Carbon nanotube structures are provided, in which the networks with a desired area and volume, where the carbon nanotubes are electrically or magnetically connected, are formed and the method for...
6855603 Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof  
The present invention provide a vertical nano-sized transistor using carbon nanotubes capable of achieving high-density integration, that is, tera-bit scale integration, and a manufacturing method...
6852582 Carbon nanotube gate field effect transistor  
The present invention generally relates to an apparatus and method of carbon nanotube (CNT) gate field effect transistor (FET), which is used to replace the current metal gate of transistor for...
6835613 Method of producing an integrated circuit with a carbon nanotube  
A method of producing an integrated circuit with a carbon nanotube is disclosed. The integrated circuit includes a source, a drain, and a gate, and the source and the drain are positioned on the...
6798000 Field effect transistor  
A field-effect transistor that having a nanowire, which forms a source region, a channel region and a drain region of the field-effect transistor, the nanowire being a semiconducting and/or...
6740910 Field-effect transistor, circuit configuration and method of fabricating a field-effect transistor  
The gate region of a field effect transistor comprises at least one through hole wherein a nanoelement is provided which is electrically coupled to the source and the drain. The nanoelement may...
5932890 Field effect transistor loaded with multiquantum barrier  
A field effect transistor having an excellent transfer conductance and an improved gate leakage current and breakdown voltage is provided. In the transistor, a multiquantum barrier structure 4 is...
5432119 High yield electron-beam gate fabrication method for sub-micron gate FETS  
Yields of FETs such as HEMTs are significantly improved by establishing an elongate gate contact opening in a patterning material with the patterning material over-hanging the opening along both...
5266506 Method of making substantially linear field-effect transistor  
An FET with multiple channels to provide a substantially linear transfer characteristic. The widths and carrier concentrations of the channels, and the depths of the channels below the gate of the...
Matches 51 - 76 out of 76 < 1 2