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7149998 |
Lithography process modeling of asymmetric patterns
A lithography process model is generated to account for asymmetric printing of a feature of a target pattern to help better predict how the target pattern will print. The process model for one...
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7149999 |
Method for correcting a mask design layout
A method for performing a mask design layout resolution enhancement includes determining a level of correction for a mask design layout for a predetermined parametric yield with a minimum total...
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7146599 |
Method for using asymmetric OPC structures on line ends of semiconductor pattern layers
A method is disclosed for conducting optical proximity correction (OPC) on at least two features in a circuit design. After detecting a first feature having at least one end thereof to be in the...
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7143390 |
Method for creating alternating phase masks
A method is provided for creating a phase mask for lithographic exposure operations. In this case, phase-shifting regions ( 10 ) with a different phase are defined on both sides of critical...
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7139997 |
Method and system for checking operation of a mask generation algorithm
Disclosed is a method for checking the operation of an IC mask generation algorithm in which at least a first identifier of the mask generation algorithm is associated with at least a first symbol...
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7139998 |
Photomask designing method, pattern predicting method and computer program product
A photomask designing method used in a lithography process, the lithography process comprises illuminating light on a photomask and converging the light which has passed through the photomask on a...
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7137098 |
Pattern component analysis and manipulation
A method for determining component patterns of a raw substrate map. A subset of substrate patterns is selected from a set of substrate patterns, and combined into a composite substrate map. The...
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7131101 |
Displacing edge segments on a fabrication layout based on proximity effects model amplitudes for correcting proximity effects
Techniques for forming a mask fabrication layout for a physical integrated circuit design layout include correcting the fabrication layout for proximity effects using a proximity effects model. A...
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7131102 |
Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era
A process is described for shrinking gate lengths and poly interconnects simultaneously during the fabrication of an integrated circuit. A positive tone photoresist is coated on a substrate and is...
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7131104 |
Fast and accurate optical proximity correction engine for incorporating long range flare effects
A method is described for performing model-based optical proximity corrections on a mask layout used in an optical lithography process having a plurality of mask shapes. Model-based optical...
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7131103 |
Conductor stack shifting
A method for integrating a first integrated circuit design having first layers and a second integrated circuit design having second layers into a common reticle set. The second integrated circuit...
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7127699 |
Method for optimizing a number of kernels used in a sum of coherent sources for optical proximity correction in an optical microlithography process
A method is provided for optimizing the number of kernels N used in a sum of coherent sources (SOCS) for optical proximity correction in an optical microlithography process, including setting the...
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7127698 |
Method for reducing reticle set cost
A method of making a reticle. Design data, i.e., GDSII data is read in, then a scribe or frame is built, and the design is placed in the scribe. Then, Boolean operations, sizing, OPC corrections...
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7124396 |
Alternating phase-shift mask rule compliant IC design
A system, method and program product that implement a design object that automatically provides compliance to alternating phase shifted mask (altPSM) rules are disclosed. The invention implements a...
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7124395 |
Automatic optical proximity correction (OPC) rule generation
A method of automatically applying optical proximity correction techniques to a reticle design containing a plurality of features. The method comprises the steps of: (1) generating a first set of...
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7124394 |
Method for time-evolving rectilinear contours representing photo masks
Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process,...
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7120895 |
System and method for lithography simulation
There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing,...
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7117475 |
Method and system for utilizing an isofocal contour to perform optical and process corrections
A method and system for performing optical proximity correction (OPC) on an integrated circuit (IC) mask design is disclosed. The system and method of the present invention includes identifying a...
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7117478 |
System and method for lithography simulation
There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing,...
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7117460 |
Method for physical parameter extraction for transistor model
A method is disclosed for modifying a device dimension extraction model. After collecting in-line data with regard to at least one feature of a device for one or more layouts, a proximity and...
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7117140 |
Method of evaluating the exposure property of data to wafer
A method of evaluating the exposure property of data to a wafer in which errors in the production of a photomask and the formation of patterns caused by defocus in the transfer of data to the wafer...
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7117476 |
Determining feasibility of IC edits
A computer method of analyzing an integrated circuit (“IC”) masked design data, comprising grouping into a cluster areas of layers preceding a target metal layer that are suitable for milling,...
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7117477 |
System and method for lithography simulation
There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing,...
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7115343 |
Pliant SRAF for improved performance and manufacturability
A method for increasing coverage of subresolution assist features (SRAFs) in a layout. A set of possible SRAF placement and sizing rules for a given pitch is provided, ranked according to some...
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7114145 |
System and method for lithography simulation
There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing,...
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7114143 |
Process yield learning
A method for producing yield enhancement data from integrated circuits on a substrate. A database of defects on the substrate is compared to a database of design information for the integrated...
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7114144 |
Mask pattern inspecting method, inspection apparatus, inspecting data used therein and inspecting data generating method
A method of inspecting a photomask for a semiconductor integrated circuit formed based on drawing pattern data, includes the steps of classifying a drawing pattern of the semiconductor integrated...
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7109751 |
Methods of implementing phase shift mask compliant static memory cell circuits
Methods of implementing a static memory cell compliant with the requirements of phase shift masks. A phase shift compliant memory cell is generated by implementing a single bit line, two word...
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7109500 |
Mask pattern correction method, semiconductor device manufacturing method, mask manufacturing method and mask
A mask pattern correction method capable of preventing a position of a pattern from deviating by deformation of a mask due to gravity, a mask production method, a mask, and a production method of a...
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7111277 |
System and method for lithography simulation
There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing,...
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7111256 |
Use of overlay diagnostics for enhanced automatic process control
Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or...
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7107571 |
Visual analysis and verification system using advanced tools
A system and method of analyzing defects on a mask used in lithography are provided. A defect area image is provided as a first input, a set of lithography parameters is provided as a second input,...
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7107572 |
Methods of forming patterned reticles
The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a...
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7105841 |
Photolithographic techniques for producing angled lines
The present subject matter allows non-orthogonal lines to be formed at the same thickness as the orthogonal lines so as to promote compact designs, to be formed with even line edges, and to be...
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7107573 |
Method for setting mask pattern and illumination condition
A method for setting a mask pattern and an illumination condition suitable for an exposure method for using plural kinds of light to illuminate a mask that arranges a predetermined pattern and an...
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7103870 |
Method for planning layout for LSI pattern, method for forming LSI pattern and method for generating mask data for LSI
First, multiple circuit patterns, which will eventually make an LSI, are designed on a cell-by-cell basis, and an initial placement is made for the circuit patterns designed. Next, optical...
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7103869 |
Method of verifying IC mask sets
A method of fabricating an IC includes forming a test circuit in/on the wafer to electrically indicate that a correct mask set was used during a revision of the IC design during the manufacturing...
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7100145 |
Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs
Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been...
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7100146 |
Design system of alignment marks for semiconductor manufacture
A design system of an alignment mark for manufacturing a semiconductor device includes a memory which stores at least mark data including pattern information regarding plural kinds of marks and...
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7096452 |
Method and device for checking lithography data
Devices and methods are provided that include advantages such as the ability to identify sizes, shapes and locations of frequently unwanted additional features that occur as a result of...
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7093228 |
Method and system for classifying an integrated circuit for optical proximity correction
A method and system for performing optical proximity correction (OPC) on an integrated circuit (IC) chip design is disclosed. The system and method of the present invention includes dividing the IC...
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7093229 |
System and method for providing defect printability analysis of photolithographic masks with job-based automation
Serious defects on a mask can compromise the functionality of the integrated circuits formed on the wafer. Nuisance defects, which do not affect the functionality, waste expensive resources. A...
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7093227 |
Methods of forming patterned reticles
The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a...
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7093226 |
Method and apparatus of wafer print simulation using hybrid model with mask optical images
To exam mask defect impact during the transfer of a mask pattern to a wafer layer, tools can use mask images obtained during mask inspection. Specifically, these tools can also use optical models...
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7089528 |
Methods and systems for estimating reticle bias states
Disclosed are methods and systems for estimating a reticle bias state for a process system, that include computing a difference between control data provided to the process system and error data...
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7084413 |
Photolithographic techniques for producing angled lines
The present subject matter allows non-orthogonal lines to be formed at the same thickness as the orthogonal lines so as to promote compact designs, to be formed with even line edges, and to be...
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7086031 |
Methods of forming patterned reticles
The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a...
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7080330 |
Concurrent measurement of critical dimension and overlay in semiconductor manufacturing
A system and methodology are disclosed for monitoring and controlling a semiconductor fabrication process. One or more structures formed on a wafer matriculating through the process facilitate...
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7080349 |
Method of developing optimized optical proximity correction (OPC) fragmentation script for photolithographic processing
A method for developing an optimized layout fragmentation script for an optical proximity correction (OPC) simulation tool. A test pattern layout having at least one structure representing a...
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7076761 |
Method for creating charged-particle-beam exposure data, method for manufacturing semiconductor device, and program
A method for creating charged-particle-beam exposure data containing a description of an exposure sequence of character patterns to perform exposure of a charged-particle-beam according to a...
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