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7341969 |
Aluminum nitride sintered body
The object of the present invention is to provide a susceptor with superior thermal uniformity by minimizing pores in an aluminum nitride sintered body. In an aluminum nitride sintered body...
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7319080 |
Aluminum nitride sintered compact
An aluminum nitride sintered body comprising crystal grains of an average grain size (D 50 ) of 0.1 to 2.5 μm, and having a pore area ratio of not larger than 1×10 −7 , a pore density of not...
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7309672 |
Lightweight boron carbide materials with improved mechanical properties and process for their manufacture
This disclosure describes sintered bodies comprising about 90 wt % to about 99 wt % of boron carbide, having a B:C atomic ratio ranging from 3.8 to 4.5:1; 0 to 1 wt % free carbon; 0 to 1 wt % BN or...
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7288496 |
Aluminum nitride sintered body and method of evaluation for the same
An aluminum nitride sintered body is provided, including a polycrystalline structure in which grain boundary fracture toughness K IC gb is 1.6 MPa·m 1/2 or more. The grain boundary fracture...
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7267808 |
Aluminum nitride powder, method for producing the same and use thereof
The present invention is to produce an aluminum nitride powder which is turned into a sintered body at a temperature of not more than 1600° C., thereby obtaining a sintered aluminum nitride in...
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7247591 |
Translucent PCA ceramic, ceramic discharge vessel, and method of making
A translucent polycrystalline material suitable for use in ceramic discharge vessels for metal halide lamps is produced by sintering an alumina powder doped with a MgO sintering aid in a nitrogen...
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7247589 |
Transparent polycrystalline sintered ceramic of cubic crystal structure
Transparent polycrystalline sintered ceramic of cubic crystal structure. The invention relates to the field of technical ceramic and relates to transparent polycrystalline sintered ceramics of...
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7211216 |
Aluminum nitride ceramic, semiconductor manufacturing member, and manufacturing method for aluminum nitride ceramic
An aluminum nitride ceramic including aluminum nitride grains and grain boundary phases comprises a grain boundary phase-rich layer including more amount of the grain boundary phases in a surface...
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7211153 |
Ceramic joined body, substrate holding structure and substrate processing apparatus
A substrate holding structure having excellent corrosion resistance and airtightness, excellent dimensional accuracy and sufficient durability when mechanical or thermal stress is applied thereto...
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7148166 |
Aluminum nitride ceramics and a member used for the production of semiconductors
An aluminum nitride ceramic having a low volume resistivity at room temperature and a relatively low samarium content is provided. The aluminum nitride ceramic contains aluminum nitride as a main...
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7122490 |
Aluminum nitride materials and members for use in the production of semiconductors
A novel aluminum nitride material having a low room temperature volume resistivity is provided. The aluminum nitride material has an aluminum nitride main component and includes at least 0.03 mol %...
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7098159 |
Articles for casting applications comprising ceramic composite and methods for making articles thereof
A refractory article for use in casting operations wherein said article is subject to prolonged contact with molten metal of at least 1500° C. for at least three hours, said article comprises a...
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7087112 |
Nitride ceramics to mount aluminum nitride seed for sublimation growth
An apparatus and method for fabricating a mount for an aluminum nitride (AlN) seed for single crystal aluminum nitride growth is provided. A holder having a proximal base and wall portions...
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7081425 |
Aluminum nitride sintered body
An aluminum nitride sintered body having an oxygen concentration of not larger than 400 ppm, a metal impurity concentration of not larger than 150 ppm, and a carbon concentration of not larger than...
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7015166 |
Carbon-containing aluminum nitride sintered compact and ceramic substrate for use in equipment for manufacturing or inspecting semiconductor
An objective of the present invention is to provide an aluminum nitride sintered body making it possible to keep a volume resistivity of 10 8 Ω·cm or more, and guarantee covering-up capability,...
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6953761 |
Aluminum nitride sintered body and substrate for electronic devices
An aluminum nitride sintered body produced by sintering under pressure of a powder composition comprising aluminum nitride and 5 to 30% by weight of at least one sintering aid selected from the...
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6919287 |
Aluminum nitride materials and members used for the production of semiconductors
An aluminum nitride material having a high thermal conductivity and reduced room temperature volume resistivity is provided. The aluminum nitride material has an interconnected intergranular phase...
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6919286 |
Aluminum nitride ceramics, members for use in a system for producing semiconductors, and corrosion resistant members
An aluminum nitride ceramic is provided, including 0.5 to 10 weight percent of boron atoms and 0.1 to 2.5 weight percent of carbon atoms. The ceramic has a room temperature volume resistivity not...
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6888236 |
Ceramic substrate for manufacture/inspection of semiconductor
A ceramic substrate for a semiconductor producing/examining device which has high fracture toughness value, excellent thermal shock resistivity, high thermal conductivity and an excellent...
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6884742 |
Aluminum nitride ceramics, members for use in a system for producing semiconductors, corrosion resistant members and conductive members
An aluminum nitride ceramic is provided, containing boron atoms in an amount of not lower than 1.0 weight percent and carbon atoms in an amount of not lower than 0.3 weight percent and having a...
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6821919 |
Superior toughness and adhesive strength ceramic coating of titanium aluminum carbon nitride-amorphous carbon nanocomposite
A nanocomposite having titanium aluminum carbon nitride and amorphous carbon is disclosed, and the nanocomposite comprises a titanium aluminum carbon nitride grain of nanometer scale and an...
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6800576 |
Aluminum nitride sintered bodies and members for semiconductor-producing apparatuses
An aluminum nitride sintered body contains aluminum nitride as a main component, at least one rare earth metal element in an amount of not less than 0.4 mol % and not more than 2.0 mol % as...
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6607836 |
Material of low volume resistivity, an aluminum nitride sintered body and a member used for the production of semiconductors
A material with a low volume resistivity at room temperature composed of an aluminum nitride sintered body is provided. The sintered body contains samarium in a converted content calculated as...
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6486085 |
Aluminum nitride sintered bodies and semiconductor-producing members including same
An aluminum nitride sintered body is provided. The aluminum nitride has a polycrystalline structure of aluminum nitride crystals having an average particle diameter in a range of 5 μm to 20 μm...
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6458732 |
Lightweight dry refractory
A dry refractory composition having superior insulating value. The dry refractory composition also may have excellent resistance to molten metals and slags. The composition includes filler...
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6432855 |
Superabrasive boride and a method of preparing the same by mechanical alloying and hot pressing
A ceramic material which is an orthorhombic boride of the general formula: AlMgB 14 :X, with X being a doping agent. The ceramic is a superabrasive, and in most instances provides a hardness of 40...
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6403510 |
Aluminum nitride sintered body and manufacturing method thereof
An aluminum nitride sintered body with high heat conductivity and high strength as well as a method of inexpensively manufacturing such an aluminum nitride sintered body at a low temperature are...
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6383962 |
Aluminum nitride sintered product
An aluminum nitride sintered product which is made mainly of aluminum nitride and contains an yttrium compound in an amount of from 0.6 to 5 wt % as calculated as yttrium oxide, a vanadium compound...
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6294275 |
Aluminum-nitride sintered body, method for fabricating the same, and semiconductor substrate comprising the same
An aluminum-nitride sintered body that has both high thermal conductivity and high mechanical strength, a fabricating method for the same, and a semiconductor substrate comprising the same. A...
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6225249 |
Aluminum nitride sintered body, method of producing thereof, electrostatic chuck, susceptor, dummy wafer, clamp ring and particle catcher using the same
The aluminum nitride sintered body of the invention has a thermal conductivity equivalent to that of a high purity aluminum nitride sintered body and a volume resistivity of 10 14 Ωcm or less,...
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6174614 |
Sintered aluminum nitride body and metallized substrate prepared therefrom
A sintered aluminum nitride body comprising aluminum nitride as the main component and containing a calcium compound, an ytterbium compound, and a neodymium compound. Due to the use of the above...
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6084221 |
Aluminum nitride heater
A ceramic heater includes a substrate (1) consisting of an aluminum nitride sintered body, and a heating element (2) and a feed electrode (3), mainly composed of silver or a silver alloy, formed on...
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6051303 |
Semiconductor supporting device
A semiconductor-supporting device comprising a substrate made of an aluminum nitride-based ceramic material and having a semiconductor-placing surface, wherein an orientation degree of the aluminum...
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6048813 |
Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys
Simulated diamond gemstones are produced by faceting and polishing bulk single crystals of colorless synthetic aluminum nitride or aluminum nitride:silicon carbide alloys.
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6001760 |
Aluminum nitride sintered body, metal embedded article, electronic functional material and electrostatic chuck
In AlN crystal grains constituting a sintered body, is contained: 150 ppm-0.5 wt. %, preferably at most 0.1 wt.%, of at least one rare earth element (as oxide thereof); at most 900 ppm, preferably...
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5998321 |
Aluminum nitride sintered body, electronic functional material, and electrostatic chuck
This invention relates to an aluminum nitride sintered body comprising aluminum nitride crystal grains, in which the grains have a given content of a rare earth element (a conversion content as an...
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5993699 |
Aluminum nitride based composite body electronic functional material, electrostatic chuck and method of producing aluminum nitride based composite body
This invention provides an aluminum nitride based composite body comprising aluminum nitride crystal grains and γ-alumina type crystals in which the aluminum nitride crystal grains has a specified...
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5981416 |
Titanium nitride aluminum based sintered material and its production method
The purpose of the present invention is to provide a titanium nitride aluminum based sintered material having excellent durability and able to be cheaply produced and cut spheroidal graphite cast...
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5976398 |
Process for manufacturing semiconductor, apparatus for manufacturing semiconductor, and amorphous material
A process for manufacturing a semiconductor, including generating a first plasma of a V group element from a V group element source; generating a second plasma of an auxiliary material for...
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5958813 |
Semi-insulating aluminum nitride sintered body
The semi-insulating aluminum nitride sintered body of this invention is composed of aluminum nitride particles, electroconductive fine particles having a volume inherent resistivity value of not...
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5948716 |
Cubic boron nitride based sintered material and its producing method
The purpose of the present invention is to provide a cubic boron nitride based sintered material having excellent durability and capable of cutting at least spheroidal graphite cast iron at high...
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5925585 |
Materials formed by refractory grains bound in a matrix of aluminum nitride or sialon containing titanium nitride
The invention relates to refractory materials that may be used in iron and steel metallurgy comprising, in % by weight: A! 32 to 87% of particles and/or grains of at least one refractory...
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5914389 |
E6 associated protein
The present invention provides compositions of isolated and purified E6 Associated Protein and fragments thereof. Also provided are nucleic acid constructs encoding E6 Associated Protein. These...
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5908799 |
Apparatus for producing semiconductor using aluminum nitride bodies as substrates
An aluminum nitride sintered body is characterized by having a g-value of an unpaired electron in a spectrum of an electron spin resonance being not less than 2.0010. The aluminum nitride sintered...
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5874378 |
Sintered aluminum nitride
A sintered aluminum nitride contains rare earth elements (RE) in amounts of from 3 to 10% by weight in terms of RE 2 O 3 , alkaline earth elements (R) in amounts of from 0.3 to 3.0% by weight in...
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5837633 |
Method for production of aluminum nitride sintered body and aluminum nitride powder
The present invention provides a method for producing an aluminum nitride sintered body having excellent characteristics and an aluminum nitride powder conveniently and inexpensively. The present...
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5830570 |
Aluminum nitride substrate and process for preparation thereof
An aluminum nitride substrate composed of a sintered body base material composed mainly of aluminum nitride and an aluminum oxide layer formed on the surface of the base material, wherein at least...
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5820789 |
High voltage ceramic igniter
A method of heating, comprising the step of providing a line voltage of between 120V and 230 V across a ceramic igniter having a hot zone composition comprising: (a) between 50 and 80 v/o of an...
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5777543 |
Ceramic resistor and electrostatic chuck having an aluminum nitride crystal phase
A ceramic resistor comprising chiefly an aluminum nitride, and an electrostatic chuck using the ceramic resistor as a resistor layer. The ceramic resistor comprises chiefly an aluminum nitride...
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5773377 |
Low temperature sintered, resistive aluminum nitride ceramics
An aluminum nitride ceramic having enhanced properties suitable for electronic packaging applications can be prepared from a synergistic aluminum nitride powder/sintering aid mixture, in which the...
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