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8148283 |
Aluminum nitride sintered body
A high-purity aluminum nitride sintered body is provided by efficiently removing oxides contained in a raw material powder in producing an aluminum nitride sintered body and preventing composite...
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8039412 |
Crystalline composition, device, and associated method
A composition including a polycrystalline metal nitride having a number of grains is provided. These grains have a columnar structure with one or more properties such as, an average grain size, a...
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8022001 |
Aluminum nitride sintered product, method for producing the same, and electrostatic chuck including the same
A method for producing an aluminum nitride sintered product according to the present invention includes the steps of (a) preparing a powder mixture that contains AlN, 2 to 10 parts by weight of...
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7973481 |
Nitride sintered body and method for manufacturing thereof
An insulating material high both in thermal conductivity and light reflectance, and a submount high in heat radiatability for mounting an LED element thereon, capable of raising a light utilization...
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7935325 |
Rare earth-activated aluminum nitride powders and method of making
Rare earth-activated aluminum nitride powders are made using a solution-based approach to form a mixed hydroxide of aluminum and a rare earth metal, the mixed hydroxide is then converted into an...
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7936128 |
Frit seal material, lamp with frit seal, and method for sealing a high intensity discharge lamp
A high intensity discharge lamp includes an arc tube with a chemical fill, capillaries extended from the arc tube, electrodes fed through the capillaries into the arc tube, and a frit seal that...
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7867466 |
Thermally conductive, electrically insulating material and production method thereof
Means for a thermally conductive and electrically insulating material 1 containing an AlN crystal 150 mainly comprising AlN, and a production method thereof. In production, a molten aluminum layer...
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7833922 |
Method of forming aluminum oxynitride material and bodies formed by such methods
Methods of forming aluminum oxynitride (AlON) materials include sintering green bodies comprising aluminum orthophosphate or another sacrificial material therein. Such green bodies may comprise...
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7803733 |
Aluminum nitride sintered body and semiconductor manufacturing apparatus member
The aluminum nitride sintered body includes at least europium, aluminum, and oxygen. It was found that a grain boundary phase having a peak having a X-ray diffraction profile substantially the same...
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7803732 |
Compositions for improved ceramic armor
The present invention contemplates the addition of zirconium compounds to well known ceramic ballistic materials to increase resistance to penetration by projectiles. In the preferred embodiments...
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7741237 |
Sealing composition for sealing aluminum nitride and aluminum oxynitride ceramics
There is described a sealing composition for sealing aluminum nitride and aluminum oxynitride ceramics comprising: a mixture of SiO2, at least one other metal oxide, and a silicon additive...
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7737065 |
Process for producing aluminum nitride sintered compacts
The present invention relates to a process of producing an aluminum nitride sintered body which satisfies both high thermal conductivity and reduction in the shrinkage factor at the time of...
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7662736 |
High thermally conductive aluminum nitride sintered product
The high thermal conductive aluminum nitride sintered body according to the present invention has: a thermal conductivity of 220 W/m·K or more; and a three point bending strength of 250 MPa or ...
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7629282 |
Aluminum nitride sintered body, semiconductor manufacturing device and method of manufacturing
A conductive channel formed of an (Sm, Ce)Al11O18 is interconnected in grain boundaries of aluminum nitride (AlN) particles, thereby reducing the temperature dependency of the volume resistivity of...
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7605102 |
Aluminum nitride ceramic and semiconductor manufacturing member
An aluminum nitride ceramic including aluminum nitride grains and grain boundary phases comprises a grain boundary phase-rich layer including more amount of the grain boundary phases in a surface...
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7592280 |
Aluminum nitride sintered body, method of manufacturing aluminum nitride sintered body, and member
An aluminum nitride sintered body is provided, wherein an average crystal grain diameter is 2.0 μm or less, a crystalline phase detected by an X-ray diffractometer is an AlN phase only or an AlN ...
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7553469 |
Aluminum nitride powder and aluminum nitride sintered compact
To provide an aluminum nitride powder and an aluminum nitride sintered body which satisfy both high thermal conductivity of an aluminum nitride sintered body and reduction in the shrinkage factor...
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7553787 |
Aluminum nitride-based ceramic sintered body and member for semiconductor manufacturing device
An aluminum nitride-based ceramic sintered body is provided, which is manufactured by sintering an aluminum nitride powder comprising aluminum nitride as a main component, carbon in an amount of...
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7473661 |
Method for preparing a sintered body of aluminum nitride
Disclosed is a method for preparing a high dense aluminum nitride (AlN) sintered body. The method includes the steps of preparing powders for the AlN sintered body comprising Y2O3 of 0.1 to 15 wt...
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7459408 |
Al2O3 dispersion-strengthened Ti2AlN composites and a method for producing the same
The invention provides Al2O3 dispersion-strengthened Ti2AlN composites, wherein Ti2AlN matrix and Al2O3 strengthening phase both are reactively formed in situ. The volume fraction of Al2O3 is 5% to...
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7407903 |
Material for high temperatures
The present invention relates to a material for use at temperatures exceeding 1200° C. and in oxidizing atmospheres consisting generally of an alloy between a metal, aluminium (Al) and carbon (C) ...
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7341969 |
Aluminum nitride sintered body
The object of the present invention is to provide a susceptor with superior thermal uniformity by minimizing pores in an aluminum nitride sintered body. In an aluminum nitride sintered body...
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7319080 |
Aluminum nitride sintered compact
An aluminum nitride sintered body comprising crystal grains of an average grain size (D50) of 0.1 to 2.5 μm, and having a pore area ratio of not larger than 1×10−7, a pore density of not larger tha...
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7309672 |
Lightweight boron carbide materials with improved mechanical properties and process for their manufacture
This disclosure describes sintered bodies comprising about 90 wt % to about 99 wt % of boron carbide, having a B:C atomic ratio ranging from 3.8 to 4.5:1; 0 to 1 wt % free carbon; 0 to 1 wt % BN or...
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7267808 |
Aluminum nitride powder, method for producing the same and use thereof
The present invention is to produce an aluminum nitride powder which is turned into a sintered body at a temperature of not more than 1600° C., thereby obtaining a sintered aluminum nitride in ...
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7247591 |
Translucent PCA ceramic, ceramic discharge vessel, and method of making
A translucent polycrystalline material suitable for use in ceramic discharge vessels for metal halide lamps is produced by sintering an alumina powder doped with a MgO sintering aid in a nitrogen...
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7247589 |
Transparent polycrystalline sintered ceramic of cubic crystal structure
Transparent polycrystalline sintered ceramic of cubic crystal structure. The invention relates to the field of technical ceramic and relates to transparent polycrystalline sintered ceramics of...
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7211153 |
Ceramic joined body, substrate holding structure and substrate processing apparatus
A substrate holding structure having excellent corrosion resistance and airtightness, excellent dimensional accuracy and sufficient durability when mechanical or thermal stress is applied thereto...
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7148166 |
Aluminum nitride ceramics and a member used for the production of semiconductors
An aluminum nitride ceramic having a low volume resistivity at room temperature and a relatively low samarium content is provided. The aluminum nitride ceramic contains aluminum nitride as a main...
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7122490 |
Aluminum nitride materials and members for use in the production of semiconductors
A novel aluminum nitride material having a low room temperature volume resistivity is provided. The aluminum nitride material has an aluminum nitride main component and includes at least 0.03 mol %...
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7098159 |
Articles for casting applications comprising ceramic composite and methods for making articles thereof
A refractory article for use in casting operations wherein said article is subject to prolonged contact with molten metal of at least 1500° C. for at least three hours, said article comprises a ...
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7087112 |
Nitride ceramics to mount aluminum nitride seed for sublimation growth
An apparatus and method for fabricating a mount for an aluminum nitride (AlN) seed for single crystal aluminum nitride growth is provided. A holder having a proximal base and wall portions...
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7081425 |
Aluminum nitride sintered body
An aluminum nitride sintered body having an oxygen concentration of not larger than 400 ppm, a metal impurity concentration of not larger than 150 ppm, and a carbon concentration of not larger than...
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7015166 |
Carbon-containing aluminum nitride sintered compact and ceramic substrate for use in equipment for manufacturing or inspecting semiconductor
An objective of the present invention is to provide an aluminum nitride sintered body making it possible to keep a volume resistivity of 108 Ω·cm or more, and guarantee covering-up capability, a l...
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6953761 |
Aluminum nitride sintered body and substrate for electronic devices
An aluminum nitride sintered body produced by sintering under pressure of a powder composition comprising aluminum nitride and 5 to 30% by weight of at least one sintering aid selected from the...
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6919287 |
Aluminum nitride materials and members used for the production of semiconductors
An aluminum nitride material having a high thermal conductivity and reduced room temperature volume resistivity is provided. The aluminum nitride material has an interconnected intergranular phase...
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6919286 |
Aluminum nitride ceramics, members for use in a system for producing semiconductors, and corrosion resistant members
An aluminum nitride ceramic is provided, including 0.5 to 10 weight percent of boron atoms and 0.1 to 2.5 weight percent of carbon atoms. The ceramic has a room temperature volume resistivity not...
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6888236 |
Ceramic substrate for manufacture/inspection of semiconductor
A ceramic substrate for a semiconductor producing/examining device which has high fracture toughness value, excellent thermal shock resistivity, high thermal conductivity and an excellent...
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6884742 |
Aluminum nitride ceramics, members for use in a system for producing semiconductors, corrosion resistant members and conductive members
An aluminum nitride ceramic is provided, containing boron atoms in an amount of not lower than 1.0 weight percent and carbon atoms in an amount of not lower than 0.3 weight percent and having a...
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6821919 |
Superior toughness and adhesive strength ceramic coating of titanium aluminum carbon nitride-amorphous carbon nanocomposite
A nanocomposite having titanium aluminum carbon nitride and amorphous carbon is disclosed, and the nanocomposite comprises a titanium aluminum carbon nitride grain of nanometer scale and an...
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6800576 |
Aluminum nitride sintered bodies and members for semiconductor-producing apparatuses
An aluminum nitride sintered body contains aluminum nitride as a main component, at least one rare earth metal element in an amount of not less than 0.4 mol % and not more than 2.0 mol % as...
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6607836 |
Material of low volume resistivity, an aluminum nitride sintered body and a member used for the production of semiconductors
A material with a low volume resistivity at room temperature composed of an aluminum nitride sintered body is provided. The sintered body contains samarium in a converted content calculated as...
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6486085 |
Aluminum nitride sintered bodies and semiconductor-producing members including same
An aluminum nitride sintered body is provided. The aluminum nitride has a polycrystalline structure of aluminum nitride crystals having an average particle diameter in a range of 5 μm to 20 μm a...
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6458732 |
Lightweight dry refractory
A dry refractory composition having superior insulating value. The dry refractory composition also may have excellent resistance to molten metals and slags. The composition includes filler...
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6432855 |
Superabrasive boride and a method of preparing the same by mechanical alloying and hot pressing
A ceramic material which is an orthorhombic boride of the general formula: AlMgB14:X, with X being a doping agent. The ceramic is a superabrasive, and in most instances provides a hardness of 40...
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6403510 |
Aluminum nitride sintered body and manufacturing method thereof
An aluminum nitride sintered body with high heat conductivity and high strength as well as a method of inexpensively manufacturing such an aluminum nitride sintered body at a low temperature are...
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6383962 |
Aluminum nitride sintered product
An aluminum nitride sintered product which is made mainly of aluminum nitride and contains an yttrium compound in an amount of from 0.6 to 5 wt % as calculated as yttrium oxide, a vanadium compound...
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6294275 |
Aluminum-nitride sintered body, method for fabricating the same, and semiconductor substrate comprising the same
An aluminum-nitride sintered body that has both high thermal conductivity and high mechanical strength, a fabricating method for the same, and a semiconductor substrate comprising the same. A...
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6225249 |
Aluminum nitride sintered body, method of producing thereof, electrostatic chuck, susceptor, dummy wafer, clamp ring and particle catcher using the same
The aluminum nitride sintered body of the invention has a thermal conductivity equivalent to that of a high purity aluminum nitride sintered body and a volume resistivity of 1014 Ωcm or less, an...
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6174614 |
Sintered aluminum nitride body and metallized substrate prepared therefrom
A sintered aluminum nitride body comprising aluminum nitride as the main component and containing a calcium compound, an ytterbium compound, and a neodymium compound. Due to the use of the above...
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