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9443989 Manufacturing method of semiconductor film, manufacturing method of semiconductor device, and manufacturing method of photoelectric conversion device  
A method for forming an amorphous semiconductor which contains an impurity element and has low resistivity and a method for manufacturing a semiconductor device with excellent electrical...
9281200 Enhanced patterning uniformity of gate electrodes of a semiconductor device by late gate doping  
When forming sophisticated semiconductor-based gate electrode structures of transistors, the pre-doping of one type of gate electrode structure may be accomplished after the actual patterning of...
9281358 Semiconductor device and method for manufacturing semiconductor device  
A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor...
9275858 Semiconductor device and manufacturing method thereof  
A semiconductor device having favorable electric characteristics and a manufacturing method thereof are provided. A transistor includes an oxide semiconductor layer formed over an insulating...
9252066 Semiconductor device and method of forming interconnect structure for encapsulated die having pre-applied protective layer  
A semiconductor device has a protective layer formed over an active surface of a semiconductor wafer. The semiconductor die with pre-applied protective layer are moved from the semiconductor wafer...
9230947 Method of forming 3D integrated microelectronic assembly with stress reducing interconnects  
A microelectronic assembly and method of making, which includes a first microelectronic element (including a substrate with first and second opposing surfaces, a semiconductor device, and...
9190268 Method for producing Ga-containing group III nitride semiconductor  
A method for producing a Ga-containing group III nitride semiconductor having reduced threading dislocation is disclosed. A buffer layer in a polycrystal, amorphous or polycrystal/amorphous mixed...
9171938 Semiconductor element and method for manufacturing the same  
An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a...
9166058 Method for manufacturing semiconductor device  
To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps....
9142648 Semiconductor device and manufacturing method thereof  
Disclosed is a semiconductor device including an oxide semiconductor film. A first oxide semiconductor film with a thickness of greater than or equal to 2 nm and less than or equal to 15 nm is...
9136422 Texturing a layer in an optoelectronic device for improved angle randomization of light  
Embodiments generally relate to optoelectronic devices and more specifically, to textured layers in optoelectronic devices. In one embodiment, a method for providing a textured layer in an...
9129848 Method and structure for integrating capacitor-less memory cell with logic  
Methods for fabricating integrated circuits include fabricating a logic device on a substrate, forming an intermediate semiconductor substrate on a surface of the logic device, and fabricating a...
9123584 In-line metrology system  
A metrology system for gauging and spatially mapping a semiconductor material on a substrate can be used in controlling deposition and thermal activation processes.
9123595 Method for fabricating a semiconductor device by bonding a layer to a support with curvature  
The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a...
9111804 Semiconductor device and method for manufacturing the same  
It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device...
9111961 Semiconductor devices with field plates  
A III-N device is described with a III-N material layer, an insulator layer on a surface of the III-N material layer, an etch stop layer on an opposite side of the insulator layer from the III-N...
9111950 Process for preparing a semiconductor structure for mounting  
A process for preparing a semiconductor structure for mounting to a carrier is disclosed. The process involves causing a support material to substantially fill a void defined by surfaces formed in...
9093435 Package-on-package assembly with wire bonds to encapsulation surface  
A method of making a microelectronic package includes forming a dielectric encapsulation layer on an in-process unit having a substrate having a first surface and a second surface remote...
9093457 Stacked microelectronic packages having patterned sidewall conductors and methods for the fabrication thereof  
Embodiments of a method for fabricating stacked microelectronic packages are provided, as are embodiments of a stacked microelectronic package. In one embodiment, the method includes arranging...
9082683 Method of manufacturing silicon carbide semiconductor device  
A first impurity region is formed by ion implantation through a first opening formed in a mask layer. By depositing a spacer layer on an etching stop layer on which the mask layer has been...
9082832 Semiconductor device and method of forming protection and support structure for conductive interconnect structure  
A semiconductor device has a semiconductor wafer with a plurality of contact pads. A first insulating layer is formed over the semiconductor wafer and contact pads. A portion of the first...
9080752 Illumination apparatus  
A light emitting element array for an illumination apparatus, an illumination apparatus and method of manufacture of the same in which an array of light-emitting elements and an array of light...
9076839 Method for manufacturing SOI substrate  
An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of...
9054134 Method for manufacturing semiconductor device  
A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of...
9054315 Method for manufacturing organic light-emitting device  
A method for manufacturing a light-emitting device includes a step of forming an etching resistant protection layer on a substrate provided with an organic planarizing layer, a step of forming a...
9048200 Semiconductor integrated circuit device and method of manufacturing same  
In manufacturing an LSI, or semiconductor integrated circuit device, the step of assembling device (such as resin sealing step) is normally followed by a voltage-application test in an environment...
9048100 Nitride semiconductor and nitride semiconductor crystal growth method  
A base at least one principal plane of which is a nitride is prepared for use in epitaxial growth. The base is placed on a susceptor in an epitaxial growth reactor and heated to a predetermined...
9048161 Method for fabricating sensor  
A method for fabricating a sensor includes: forming, on a base substrate, a pattern of a source electrode and a drain electrode, a pattern of a data line, a pattern of a receiving electrode, a...
9041207 Method to increase I/O density and reduce layer counts in BBUL packages  
An apparatus including a die including a dielectric material on a device side, an insulating layer surrounding a die area and embedding a thickness dimension of the die; and a carrier including a...
9040411 Advanced low k cap film formation process for nano electronic devices  
A method of forming a carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or...
9040969 Organic electroluminescence display device and method for manufacturing the same  
The organic electroluminescence display device has a laminated portion on a base substrate. The device may have a cavernous portion formed by exploding a part of the laminated portion in a...
9041181 Land grid array package capable of decreasing a height difference between a land and a solder resist  
A land grid array (LGA) package including a substrate having a plurality of lands formed on a first surface of the substrate, a semiconductor chip mounted on a second surface of the substrate, a...
9040369 Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric  
The present disclosure provides a method for forming a semiconductor device that includes forming a replacement gate structure overlying a channel region of a substrate. A mandrel dielectric layer...
9041058 Metal oxide semiconductor having epitaxial source drain regions and method of manufacturing same using dummy gate process  
A method of manufacturing a transistor by which sufficient stress can be applied to a channel region within allowable ranges of concentrations of Ge and C in a mixed crystal layer. A semiconductor...
9040386 Method for varied topographic MEMS cap process  
A device includes sidewalls formed in a wafer surface, where the sidewalls descend to a recessed surface. The recessed surface generally promotes resist coverage on the wafer surface, including...
9041009 Method and structure for forming high-K/metal gate extremely thin semiconductor on insulator device  
A semiconductor device is provided that includes a gate structure present on a substrate. The gate structure includes a gate conductor with an undercut region in sidewalls of a first portion of...
9040434 Film deposition method and film deposition apparatus  
A film deposition method includes a step of condensing hydrogen peroxide on a substrate including a concave portion formed in a surface thereof by supplying a gas containing the hydrogen peroxide,...
9040354 Chip comprising a fill structure  
A chip includes a dielectric layer and a fill structure in the dielectric layer, wherein the fill structure extends along a dicing edge of the chip, with the fill structure abutting the dicing edge.
9040408 Techniques for wafer-level processing of QFN packages  
Semiconductor package devices, such as wafer-level package semiconductor devices, are described that have pillars for providing electrical interconnectivity. In an implementation, the wafer-level...
9041133 BSI image sensor package with embedded absorber for even reception of different wavelengths  
A microelectronic image sensor assembly for backside illumination and method of making same are provided. The assembly includes a microelectronic element having contacts exposed at a front face...
9039916 In situ oxide removal, dispersal and drying for copper copper-oxide  
A method for removing copper-oxide from copper powder, the method comprising: providing a copper powder defined by each particle having a copper core and a copper-oxide layer surrounding the...
9040330 Method of manufacturing organic light-emitting display apparatus  
A deposition apparatus includes (i) a sheet including a slit area, first and second dummy slit areas, and a binding area; and (ii) a frame. The slit area has a plurality of patterning slits that...
9041109 Field effect transistor including a recessed and regrown channel  
At least one doped semiconductor material region is formed over a crystalline insulator layer. A disposable gate structure and a planarization dielectric layer laterally surrounding the disposable...
9040370 Anti-fuses on semiconductor fins  
A device includes a substrate, isolation regions at a surface of the substrate, and a semiconductor region over a top surface of the isolation regions. A conductive feature is disposed over the...
9040363 FinFET with reduced capacitance  
An improved finFET structure, and method forming the same, including a plurality of fins etched from a semiconductor substrate, a plurality of gates above and perpendicular to the plurality of...
9040352 Film-assist molded gel-fill cavity package with overflow reservoir  
A semiconductor device package having a cavity formed using film-assisted molding techniques is provided. Through the use of such techniques the cavity can be formed in specific locations in the...
9039909 Plasma etching method, semiconductor device manufacturing method and computer-readable storage medium  
There is provided a plasma etching method for forming a hole in a silicon oxide film formed on an etching stopper layer. The plasma etching method includes a main etching process for etching the...
9040425 Methods of forming printable integrated circuit devices and devices formed thereby  
Methods of forming integrated circuit devices include forming a sacrificial layer on a handling substrate and forming a semiconductor active layer on the sacrificial layer. A step is performed to...
9040331 Diode-based devices and methods for making the same  
In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening having an aspect ratio of at least...
9040377 Low loss SiC MOSFET  
A Vertical Multiple Implanted Silicon Carbide Power MOSFET (VMIMOSFET) includes a first conductivity semiconductor substrate, a first conductivity semiconductor drift layer on the top of the...