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7619311 Memory cell device with coplanar electrode surface and method  
A memory device described herein includes a bit line having a top surface and a plurality of vias. The device includes a plurality of first electrodes each having top surfaces coplanar with the top...
7618841 Hydrazine-free solution deposition of chalcogenide films  
A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing...
7618840 Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof  
A contact structure for a PCM device is formed by an elongated formation having a longitudinal extension parallel to the upper surface of the body and an end face extending in a vertical plane. The...
7615401 Methods of fabricating multi-layer phase-changeable memory devices  
A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second...
7615400 Method for producing multijunction solar cell  
There is provided a method for producing a multijunction solar cell having four-junctions, the method allowing the area of a device to be increased. On a nucleation site formed on a substrate 2, ...
7612365 Strained silicon with elastic edge relaxation  
A thin blanket epitaxial layer of SiGe is grown on a silicon substrate to have a biaxial compressive stress in the growth plane. A thin epitaxial layer of silicon is deposited on the SiGe layer,...
7606064 Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device  
According to one embodiment, at least a portion of the phase change material including a first crystalline phase is converted to one of a second crystalline phase and an amorphous phase. The second...
7606056 Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array thereby manufactured  
A process for manufacturing a phase change memory array includes the steps of: forming a plurality of phase change memory cells in an array region of a semiconductor wafer, the phase change memory...
7599216 Phase change memory devices and fabrication methods thereof  
In a memory device, a transistor may be formed on a substrate, and a first electrode may be electrically connected thereto. A phase change material film may be vertically formed on the first...
7598113 Phase change memory device and fabricating method therefor  
A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography....
7598112 Phase change memory devices and their methods of fabrication  
In an embodiment, a phase change memory device includes a semiconductor substrate of a first conductivity type and a first interlayer insulating layer disposed on the semiconductor substrate. A...
7595218 Programmable resistive RAM and manufacturing method  
Programmable resistive RAM cells have a resistance that depends on the size of the programmable resistive elements. Manufacturing methods and integrated circuits for programmable resistive elements...
7582568 Method of forming a phase changeable structure  
The present invention relates to a method of forming a phase changeable structure wherein an upper electrode is formed on a phase changeable layer. A material including fluorine can be provided to...
7582506 Precursor containing copper indium and gallium for selenide (sulfide) compound formation  
The present invention relates to systems and methods for preparing metallic precursor thin films for the growth of semiconductor compounds to be used for radiation detector and solar cell...
7579210 Planar segmented contact  
An electronic device including a planar segmented contact. A method for forming the device includes depositing a first insulator on a substrate, forming an opening in the first insulator, disposing...
7575950 Semiconductor device and a method of manufacturing the same  
A semiconductor device having improved performance and improvement manufacturing yield is provided. After a semiconductor integrated circuit including a phase change memory and a nonvolatile memory...
7572666 Reduced area intersection between electrode and programming element  
A method comprising forming a first dielectric layer over an electrode formed to a first contact point on a substrate, the electrode having a contact area; patterning the first dielectric layer...
7570512 Phase change memory device with reduced unit cell size and improved transistor current flow and method for manufacturing the same  
A phase change memory device includes: a semiconductor substrate having active areas; a pair of word lines formed over the active areas and connected with each other at each end thereof; source...
7569417 Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device  
A phase changeable material layer usable in a semiconductor memory device and a method of forming the same are disclosed. The method includes forming a plasma in a chamber having a substrate...
7563639 Phase-changeable memory device and method of manufacturing the same  
In a semiconductor memory device and a method of manufacturing the same, an insulating layer is formed on a substrate having a logic region on which a first pad is provided and a cell region on...
7560337 Programmable resistive RAM and manufacturing method  
Programmable resistive RAM cells have a resistance that depends on the size of the contacts. Manufacturing methods and integrated circuits for lowered contact resistance are disclosed that have...
7553692 Phase-change memory device and method of manufacturing the same  
Disclosed are a phase-change memory device and its manufacturing method, which can reduce a contact area between a bottom electrode and a phase-change layer, thereby reducing the quantity of...
7550818 Method of manufacture of a PCRAM memory cell  
The invention provides a method of forming a resistance variable memory element and the resulting element. The method includes forming an insulating layer having an opening therein; forming a metal...
7550313 Method for delineation of phase change memory (PCM) cells separated by PCM and upper electrode regions modified to have high film resistivity  
A method for forming a Phase Change Material (PCM) cell structure comprises forming both a lower electrode composed of a PCM layer and a conductive encapsulating upper electrode layer. The PCM is...
7534647 Damascene phase change RAM and manufacturing method  
A method for manufacturing a memory device uses a damascene process to define memory elements. The device comprises a first electrode having a top side, a second electrode having a top side and an...
7531378 Forming an intermediate electrode between an ovonic threshold switch and a chalcogenide memory element  
An intermediate electrode between an ovonic threshold switch and a memory element may be formed in the same pore with the memory element. This may have many advantages including, in some...
7527985 Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas  
A method for manufacturing a memory device comprises patterning a dielectric layer and a conductive layer to align near the center of the top surface of a first contact drain plug and near the...
7521281 Methods of forming phase-changeable memory devices  
Phase-changeable memory devices include non-volatile memory cells. Each of these non-volatile memory cells may include a phase-changeable diode on a semiconductor substrate and a phase-changeable...
7517718 Method for fabricating an inorganic nanocomposite  
An inorganic nanocomposite is prepared by obtaining a solution of a soluble hydrazine-based metal chalcogenide precursor; dispersing a nanoentity in the precursor solution; applying a solution of...
7514704 Phase-change memory device and method of manufacturing the same  
In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to...
7514367 Method for manufacturing a narrow structure on an integrated circuit  
A method of manufacturing for providing a narrow line, such as a phase change bridge, on a substrate having a top surface, includes first forming a layer of first material on the substrate. Then, a...
7514288 Manufacturing methods for thin film fuse phase change ram  
A method for manufacturing a memory device comprises forming an electrode layer on a substrate which comprises circuitry made using front-end-of-line procedures. The electrode layer includes a...
7511297 Phase change memory device and method of fabricating the same  
A phase change memory device and a method of fabricating the same are disclosed. The phase change memory device includes a first conductor pattern having a first conductivity type and a sidewall. A...
7501307 Method of fabricating semiconductor memory device  
In a semiconductor memory device and a method of fabricating the same, a semiconductor memory device having a transistor and a data storing portion includes a heating portion interposed between the...
7494841 Solution-based deposition process for metal chalcogenides  
A solution of a hydrazine-based precursor of a metal chalcogenide is prepared by adding an elemental metal and an elemental chalcogen to a hydrazine compound. The precursor solution can be used to...
7491574 Reducing oxidation of phase change memory electrodes  
A phase change memory may be formed in a way which reduces oxygen infiltration through a chalcogenide layer overlying a lower electrode. Such infiltration may cause oxidation of the lower electrode...
7491573 Phase change materials for applications that require fast switching and high endurance  
A memory device utilizing a phase change material as the storage medium, the phase change material based on antimony as the solvent in a solid solution.
7485891 Multi-bit phase change memory cell and multi-bit phase change memory including the same, method of forming a multi-bit phase change memory, and method of programming a multi-bit phase change memory  
A multi-bit phase change memory cell including a stack of a plurality of conductive layers and a plurality of phase change material layers, each of the phase change material layers disposed between...
7485487 Phase change memory cell with electrode  
The present invention in one embodiment provides a method of forming a memory device including providing a first dielectric layer including at least one via containing a metal stud; providing a...
7482616 Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same  
In one embodiment, a phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a...
7479405 PRAMS having a plurality of active regions located vertically in sequence and methods of forming the same  
There are provided PRAMS having a plurality of active regions located vertically in sequence and methods of forming the same. The PRAM and the method provide an approach to rapidly changing phase...
7473576 Method for making a self-converged void and bottom electrode for memory cell  
A base layer, comprising an electrically conductive element, is formed. An upper layer, including a third, lower planarization stop layer, a second layer and a first, upper layer is formed on the...
7473574 Memory element with improved contacts  
A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall...
7468146 Metal chalcogenide composite nano-particles and layers therewith  
A metal chalcogenide composite nano-particle comprising a metal capable of forming p-type semiconducting chalcogenide nano-particles and a metal capable of forming n-type semiconducting...
7465604 Methods of fabricating alignment key structures in semiconductor devices including protected electrode structures  
An integrated circuit device includes a storage cell including an upper electrode and a lower electrode on a substrate, and a conductive hard mask pattern directly on the upper electrode of the...
7462858 Fabrication of phase change memory element with phase-change electrodes using conformal deposition  
A phase change memory element with phase change electrodes, and method of making the same. Exemplary embodiments include a phase change bridge, including a bottom contact layer, a first insulating...
7459336 Method of forming a chalcogenide material containing device  
Embodiments of the invention provide a method of forming a chalcogenide material containing device, and particularly resistance variable memory elements. A stack of one or more layers is formed...
7456420 Electrode for phase change memory device and method  
An electrode for a memory material of a phase change memory device is disclosed. The electrode includes a first layer adhered to the memory material, the first layer including a nitride (AN x ),...
7453716 Semiconductor memory device with stacked control transistors  
In a semiconductor memory device and method, phase-change memory cells are provided, each including a plurality of control transistors formed on different layers and variable resistance devices...
7433227 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication  
A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a chalcogenide glass region is provided with a plurality of alternating tin chalcogenide and...
Matches 1 - 50 out of 411 1 2 3 4 5 6 7 8 9 >