Match Document Document Title
9034686 Manufacturing methods for semiconductor devices  
Embodiments of the present invention include a method. The method includes heating a layer stack. The layer stack includes a first layer comprising cadmium and tin, a metal layer disposed over the...
9029187 Using multi-layer MIMCAPs with defective barrier layers as selector element for a cross bar memory array  
Selector devices that can be suitable for memory device applications can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents...
9018083 Electrically actuated device and method of controlling the formation of dopants therein  
In an example of a method for controlling the formation of dopants in an electrically actuated device, a predetermined concentration of a dopant initiator is selected. The predetermined amount of...
9018032 CIGS solar cell structure and method for fabricating the same  
A method for manufacturing a CIGS thin film photovoltaic device includes forming a back contact layer on a substrate, forming an Se-rich layer on the back contact layer, forming a precursor layer...
9012881 Resistive-switching memory elements having improved switching characteristics  
Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between...
9011763 Nanocomposites with high thermoelectric figures of merit  
The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components,...
9006020 Method and system of providing dopant concentration control in different layers of a semiconductor device  
A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.
8999746 Method of forming metal chalcogenide dispersion, metal chalcogenide dispersion, method of producing light absorbing layer of solar cell, method of producing solar cell  
A method of producing a metal chalcogenide dispersion usable in forming a light absorbing layer of a solar cell, the method including: a metal chalcogenide nano particle formation step in which at...
8999745 Phase-change memory device and fabrication method thereof  
A phase-change memory device and a method of fabricating the same are provided. The phase-change memory device includes a semiconductor substrate in which a word line is arranged, a diode line...
8993371 Method of manufacturing light absorbing layer for solar cell using selenization process under element selenium vapor ambience and thermal treatment apparatus for manufacturing light absorbing layer  
The method of manufacturing a light absorbing layer for a solar cell by performing thermal treatment on a specimen configured to include thin films of one or more of copper, indium, and gallium on...
8993370 Reverse stack structures for thin-film photovoltaic cells  
In one embodiment, a method includes depositing a photoactive layer onto a first substrate, depositing a contact layer onto the photoactive layer, attaching a second substrate onto the contact...
8980709 Resistive-switching memory element  
A resistive-switching memory element is described. The memory element includes a first electrode, a porous layer over the first electrode including a point defect embedded in a plurality of pores...
8981328 Back to back resistive random access memory cells  
A resistive random access memory cell formed in an integrated circuit includes first and second resistive random access memory devices, each including an anode and a cathode. The anode of the...
8980681 Method for fabricating solar cell  
The disclosure provides a method for fabricating a solar cell, including: providing a first substrate; forming a light absorption precursor layer on the first substrate; conducting a thermal...
8980679 Apparatus and methods for forming phase change layer and method of manufacturing phase change memory device  
Provided are apparatus and methods for forming phase change layers, and methods of manufacturing a phase change memory device. A source material is supplied to a reaction chamber, and purges from...
8980682 Methods for fabricating ZnOSe alloys  
Methods of forming absorber layers in a TFPV device are provided. Methods are described to provide the formation of metal oxide films and heating the metal oxide films in the presence of a...
8975513 Quantum dot-sensitized wide bandgap semiconductor heterojunction photovoltaic devices  
A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the...
8969720 Photoelectronically active, chalcogen-based thin film structures incorporating tie layers  
The present invention provides improved chalcogen-containing, photovoltaic structures as well as related compositions, photovoltaic devices incorporating these structures, methods of making these...
8969124 Method for fabricating Cu—In—Ga—Se film solar cell  
A method for fabricating a Cu—In—Ga—Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu—In—Ga—Se absorbing layer on...
8962378 Photodiode and method for making the same  
A method for manufacturing a photodiode including the steps of providing a substrate, solution depositing a quantum nanomaterial layer onto the substrate, the quantum nanomaterial layer including...
8962379 Method of producing CIGS film, and method of producing CIGS solar cell by using same  
A CIGS film production method is provided which ensures that a CIGS film having a higher conversion efficiency can be produced at lower costs at higher reproducibility even for production of a...
8956698 Process and hardware for deposition of complex thin-film alloys over large areas  
Systems and methods for depositing complex thin-film alloys on substrates are provided. In particular, systems and methods for the deposition of thin-film Cd1-xMxTe ternary alloys on substrates...
8952349 Switching device having a non-linear element  
A switching device includes a substrate; a first electrode formed over the substrate; a second electrode formed over the first electrode; a switching medium disposed between the first and second...
8946838 Radiation converter comprising a directly converting semiconductor layer and method for producing such a radiation converter  
A radiation converter includes a directly converting semiconductor layer having grains whose interfaces predominantly run parallel to a drift direction—constrained by an electric field—of...
8946073 Phase change memory cell with large electrode contact area  
A phase change memory cell and a method for fabricating the phase change memory cell. The phase change memory cell includes a bottom electrode and a first non-conductive layer. The first...
8946669 Resistive memory device and fabrication methods  
A method for forming a resistive memory device includes providing a substrate comprising a first metal material, forming a conductive silicon-bearing layer on top of the first metal material,...
8945980 Alkali metal-doped solution-processed metal chalcogenides  
A method is provided for forming an alkali metal-doped solution-processed metal chalcogenide. A first solution is formed that includes a first material group of metal salts, metal complexes, or...
8932897 Phase change memory cell  
A phase change memory cell includes a first contact, a phase change region above and in contact with the first contact, an electrode region, and a second contact above and in contact with the...
8933430 Variable resistance memory device and method of manufacturing the same  
A variable resistance memory device and a method of manufacturing the same are provided. The variable resistance memory device includes a multi-layered insulating layer including a plurality of...
8921691 Solar cell and manufacturing method thereof  
There is provided a solar cell in which a lower electrode layer, a photoelectric conversion layer having a chalcopyrite structure that includes a Group Ib element, a Group IIIb element, and a...
8921817 Phase-change random access memory device having multi-levels and method of manufacturing the same  
A phase-change random access memory (PCRAM) device and a method of manufacturing the same. The PCRAM includes a heating electrode having an upper surface protruding in a stepped shape and a...
8921822 Phase-change random access memory device and method of manufacturing the same  
A phase-change random access memory (PRAM) device and a method of manufacturing the same are provided. The PRAM device includes a semiconductor substrate in which a switching device is formed, a...
8921821 Memory cells  
Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the...
8921147 Method and apparatus providing multi-step deposition of thin film layer  
A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.
8916412 High efficiency cadmium telluride solar cell and method of fabrication  
A method of forming an ohmic contact and electron reflector on a surface of a CdTe containing compound film as may be found, for example in a photovoltaic cell. The method comprises forming a...
8916413 Phase change memory and manufacturing method therefor  
The present invention discloses a phase change memory and a manufacturing method thereof. The phase change memory according to the present invention uses top electrodes provided on the top of...
8916414 Method for making memory cell by melting phase change material in confined space  
To form a memory cell with a phase change element, a hole is formed through an insulator to a bottom electrode, and a phase change material is deposited on the insulator surface covering the hole....
8912515 Manufacturing method for pipe-shaped electrode phase change memory  
A method for manufacturing a memory cell device includes forming a bottom electrode comprising a pipe-shaped member, a top, a bottom and sidewalls having thickness in a dimension orthogonal to the...
8912037 Method for making photovoltaic devices using oxygenated semiconductor thin film layers  
A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the...
8906732 Method and device for cadmium-free solar cells  
A method for fabricating a thin film photovoltaic device is provided. The method includes providing a substrate comprising a surface region made of a thin-film photovoltaic absorber including...
8907205 Combined Pn junction and bulk photovoltaic device  
A solar cell comprising a semiconductor solar cell of a first band gap; a buffer layer formed on a surface of the semiconductor solar cell; and at least one layer of a multiferroic or a...
8900664 Method of fabricating high efficiency CIGS solar cells  
A method is disclosed for fabricating high efficiency CIGS solar cells including the deposition of a multi-component metal precursor film on a substrate. The substrate is then inserted into a...
8894826 Copper indium gallium selenide (CIGS) thin films with composition controlled by co-sputtering  
A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering...
8895401 Method of forming a memory device incorporating a resistance variable chalcogenide element  
A method of forming a memory device, such as a PCRAM, including selecting a chalcogenide glass backbone material for a resistance variable memory function and devices formed using such a method.
8889468 Method and structure for thin film tandem photovoltaic cell  
A tandem photovoltaic cell. The tandem photovoltaic cell includes a bifacial top cell and a bottom cell. The top bifacial cell includes a top first transparent conductive oxide material. A top...
8889466 Protective insulating layer and chemical mechanical polishing for polycrystalline thin film solar cells  
A method for forming a photovoltaic device includes forming an absorber layer with a granular structure on a conductive layer; conformally depositing an insulating protection layer over the...
8890107 Semiconductor memory  
Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting...
8889469 Multi-nary group IB and VIA based semiconductor  
Methods and devices are provided for forming multi-nary semiconductor. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor...
8883602 Memory devices having electrodes comprising nanowires, systems including same and methods of forming same  
Memory devices having memory cells comprising variable resistance material include an electrode comprising a single nanowire. Various methods may be used to form such memory devices, and such...
8883549 p-Doping of CdTe polycrystalline thin film based on Cd vacancy theory  
Exemplary embodiments of the present disclosure are directed to improve p-type doping (p-doping) of cadmium telluride (CdTe) for CdTe-based solar cells, such as cadmium Sulfide (Cds)/CdTe solar...