|
Match
|
Document |
Document Title |
|
|
7582515 |
Multi-junction solar cells and methods and apparatuses for forming the same
Embodiments of the present invention generally relate to solar cells and methods and apparatuses for forming the same. More particularly, embodiments of the present invention relate to thin film...
|
|
|
7569432 |
Method of manufacturing an LED
A method of manufacturing an LED of high reflectivity includes forming a substrate; depositing an n-type GaN layer on the substrate; depositing an active layer on a first portion of the n-type GaN...
|
|
|
7553690 |
Starved source diffusion for avalanche photodiode
This disclosure is concerned with starved source diffusion methods for forming avalanche photodiodes are provided for controlling an edge effect. In one example, a method for manufacturing an...
|
|
|
7547587 |
Method for manufacturing semiconductor light emitting device
A laminated structure having light-emitting units is formed on a single-crystal wafer. Electrode patterns are formed on the single-crystal wafer opposite the light-emitting units. Dummy patterns...
|
|
|
7528017 |
Method of manufacturing complementary diodes
Process variation-tolerant diodes and diode-connected thin film transistors (TFTs), printed or patterned structures (e.g., circuitry) containing such diodes and TFTs, methods of making the same,...
|
|
|
7510903 |
Transient voltage suppression device
A bi-directional transient voltage suppression (“TVS”) device ( 101 ) includes a semiconductor die ( 201 ) that has a first avalanche diode ( 103 ) in series with a first rectifier diode ( 104...
|
|
|
7474011 |
Method for improved single event latch up resistance in an integrated circuit
A process and system for estimating the occurrence of single event latch-up in an integrated circuit. The process involves determining the resistance between each junction and the closest...
|
|
|
7429761 |
High power diode utilizing secondary emission
A high power diode includes a cathode for emitting a primary electron discharge, an anode, and a porous dielectric layer, e.g. a honeycomb ceramic, positioned between the cathode and the anode for...
|
|
|
7384854 |
Method of forming low capacitance ESD robust diodes
A method of forming a diode having a capacitance below 0.1 pF and a breakdown voltage of at least 500V. The method including forming an anode of a first conductivity type and a cathode of a second...
|
|
|
7309638 |
Method of manufacturing a semiconductor component
A semiconductor component comprises a first semiconductor region ( 110, 310 ), a second semiconductor region ( 120, 320 ) above the first semiconductor region, a third semiconductor region ( 130,...
|
|
|
7268339 |
Large area semiconductor detector with internal gain
A method is provided for forming a semiconductor-detection device that provides internal gain. The method includes forming a plurality of bottom trenches in a bottom surface of an n-doped...
|
|
|
7268010 |
Method of manufacturing an LED
The present invention related to a method of manufacturing an LED, including the steps of: first, forming a tape coppery metal strip; then, continuously pressing circuits on the tape coppery metal...
|
|
|
7229932 |
Method and structure for fabricating a halftone mask for the manufacture of semiconductor wafers
A method for manufacturing a mask for integrated circuit devices. The method includes providing a quartz substrate having a surface and forming a MoSi film overlying the surface of the quartz...
|
|
|
7169634 |
Design and fabrication of rugged FRED
An improved Fast Recovery Diode comprises a main PN junction defining a central conduction region for conducting high current in a forward direction and a peripheral field spreading region...
|
|
|
7091527 |
Semiconductor photodetection device
A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting...
|
|
|
7056761 |
Avalanche diode with breakdown voltage controlled by gate length
In an avalanche structure, different breakdown voltages are achieved by making use of a polygate and forming a highly doped p-n junction beneath the polygate, and adjusting the gate length and...
|
|
|
6946318 |
Method of forming GE photodetectors
A photodetector device includes a plurality of Ge epilayers that are grown on a substrate and annealed in a defined temperature range. The Ge epilayers form a tensile strained Ge layer that allows...
|
|
|
6933169 |
Optical semiconductor device
A LED has a thin highly resistive or insulative layer formed below an electrode pad in order to divert current flow from the region below an electrode pad, which region does not contribute to light...
|
|
|
6885039 |
Semiconductor photodetector and avalanche photodiode
There is provided a semiconductor photodetector which comprises (i) an InP substrate( 1 ), (ii) an optical waveguide( 5 ) having an N-type semiconductor layer( 32 ) formed on the InP substrate( 1...
|
|
|
6869820 |
High efficiency light emitting diode and method of making the same
A high efficiency light emitting diode (LED) with metal reflector and the method of making the same is disclosed. The metal reflector is composed of at least two layers with one transparent...
|
|
|
6855587 |
Gate-controlled, negative resistance diode device using band-to-band tunneling
A new gate-controlled, negative resistance diode device is achieved. The device comprises, first, a semiconductor layer in a substrate. The semiconductor layer contains an emitter region and a...
|
|
|
6833284 |
Method for subdividing wafers into chips
In order to subdivide a wafer ( 1 ) into chips, recesses ( 7 ) are introduced from a rear side ( 6 ), said recesses weakening the wafer ( 1 ) at the breaking points. As a result, it is possible to...
|
|
|
6821831 |
Electrostatic discharge protection in double diffused MOS transistors
The specification describes a DMOS transistor that is fully integrated with an electrostatic protection diode (ESD). The ESD diode is isolated from the DMOS device by a trench. The trench is...
|
|
|
6797581 |
Avalanche photodiode for photon counting applications and method thereof
A method for manufacturing an improved APD structure and an improved manner of operating APD's particularly beneficial for a single photon detection applications are provided. An APD is provided...
|
|
|
6774460 |
IMPATT diodes
The present invention relates to an impact ionisation avalanche transit time (IMPATT) diode device comprising an avalanche region and a drift region, wherein at least one narrow bandgap region,...
|
|
|
6743657 |
Method for combined fabrication of indium gallium arsenide/indium phosphide avalanche photodiodes and P-I-N photodiodes
An Indium/Gallium/Arsenide (InGaAs) detector having avalanche photodiodes (APD's) and p-i-n photodiodes on a single chip is provided. A method of fabricating the InGaAs device is also provided. The...
|
|
|
6686647 |
Gunn diode and method of manufacturing the same
Indium phosphor (InP) Gunn diode that realizes improvements in thermal characteristics, yield factor of good products and easy assembly to planar circuits is provided. In a Gunn diode of the...
|
|
|
RE38072 |
Fabrication method for AlGaInNPAsSb based devices
A fabrication process for a semiconductor device including a plurality of semiconductor layers, the plurality of semiconductor layers including at least a nitrogen-containing alloy semiconductor Al...
|
|
|
6492239 |
Method for fabricating avalanche photodiode
An avalanche photodiode fabricating method with a simplified fabrication process and an improved reproducibility is disclosed. The method for fabricating an avalanche photodiode includes the steps...
|
|
|
6489659 |
Non-hermetic APD
A non-hermetic APD for operation in a moisture-containing ambient comprises an InP/InGaAsP-containing Group III-V compound semiconductor body and a p-n junction formed in the body. Typically the...
|
|
|
6482671 |
Integrated optoelectronic device with an avalanche photodetector and method of making the same using commercial CMOS processes
An integrated optoelectronic circuit chip for optical data communication systems includes a silicon substrate, at least one MOS field effect transistor (MOSFET) formed on a portion of the silicon...
|
|
|
6437233 |
Solar cell having multi-quantum well layers transitioning from small to large band gaps and method of manufacture therefor
A solar cell comprises a superstrate formed from a material that is transparent to light, a first layer formed of delta doped silicon, a plurality of layers formed from semiconductor materials,...
|
|
|
6344368 |
Method for forming CMOS sensor
The present invention is related to a method for forming a CMOS image sensor device. A CMOS image device has a first MOS device acting as a source follower of an active pixel, a second MOS device...
|
|
|
6066510 |
Method for forming a photodiode with improved photoresponse behavior
The quantum efficiency of a photodiode is substantially increased by forming the photodiode on a heavily-doped layer of semiconductor material which, in turn, is formed on a semiconductor...
|
|
|
6027955 |
Method of making an active pixel sensor integrated with a pinned photodiode
The optimization of two technologies (CMOS and CCD) wherein a pinned photodiode is integrated into the image sensing element of an active pixel sensor. Pinned photodiodes are fabricated with CCD...
|
|
|
6015721 |
Method of manufacturing an avalanche photodiode
A method of manufacturing an avalanche photodiode capable of effectively preventing edge breakdown is disclosed. First, so as to manufacture an avalanche photodiode an absorption layer, a grading...
|
|
|
5937274 |
Fabrication method for AlGaIn NPAsSb based devices
A fabrication process for a semiconductor device including a plurality of semiconductor layers, the plurality of semiconductor layers including at least a nitrogen-containing alloy semiconductor Al...
|
|
|
5858808 |
Process and auxiliary device for fabricating semiconductor devices
An auxiliary device is constituted by a U-bolt-shaped, pincer-like implement which, during the fabrication of semiconductor devices with a mesa structure from a starting substrate forming a wafer,...
|
|
|
5843804 |
Method of making avalanche photodiodes with epitaxially-regrown guard rings
A SAM avalanche photodiode formed with an epitaxially regrown guard ring and a planar P-N junction defined between a cap layer and a multiplication layer. The multiplication layer is part of a...
|
|
|
5670383 |
Method for fabrication of deep-diffused avalanche photodiode
A method of forming a planar semiconductor device, such as an array of APDs, includes the steps of doping a substantially planar block of n type semiconductor material with a p type dopant in...
|
|
|
5500376 |
Method for fabricating planar avalanche photodiode array
A method of forming a planar photosensitive device, such as an array of APDs, includes the steps of doping a substantially planar block of n type semiconductor material with a p type dopant in...
|
|
|
5346837 |
Method of making avalanche photodiode
A method of making an avalanche photodiode includes depositing a light-absorbing semiconductor layer of a first conductivity type on a semiconductor substrate of the first conductivity type;...
|
|
|
5343055 |
Avalanche photodiode structure with Mg doping and method
An avalanche photodiode structure has a graded magnesium guard ring formed by diffusion from an organic-metallic source. Suitably masked APD layers are placed in an open flow reactor and heated...
|
|
|
5134090 |
Method of fabricating patterned epitaxial silicon films utilizing molecular beam epitaxy
A method of producing patterned epitaxial silicon films and devices fabricated thereby is described. The method forms a first layer of a refractory material on a substrate and pattern delineates...
|
|
|
5116773 |
Method for manufacturing a junction field effect transistor
The present invention provides a method for manufacturing a field effect transistor which overcomes problems occurring in the manufacture of InP material junction field effect transistors. Because...
|
|
|
5114866 |
Fabricating an avalanche photo diode having a step-like distribution
Disclosed is a preferable method for producing an avalanche photo diode in which an impurity-doped region having a relatively high concentration and a step-like distribution has a step portion in...
|
|
|
4992386 |
Method of manufacturing a semiconductor light detector
A semiconductor light detector includes a first semiconductor layer of a first conductivity type having a multi-layer structure including a light absorbing layer and an avalanche multiplicating...
|
|
|
4906583 |
Making a semiconductor photodetector
A semiconductor photodetector, such as a PIN photodiode and an avalanche photodiode, comprising an InP substrate, a first InP layer, a GaInAs or GaInAsP light absorbing layer, and a second InP...
|
|
|
4876209 |
Method of making avalanche photodiode
The disclosed invention as directed to a semiconductor material avalanche photodiode of a separate multiplication and absorption region heterostructure design (SAM-APD). The improved SAM-APD of...
|
|
|
4840916 |
Process for fabricating an avalanche photodiode
Disclosed is an avalanche photodiode wherein a light absorption layer and a multiplication layer are first grown on substrate. The multiplication layer is then mesa-etched and another semiconductor...
|