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7615502 Laser anneal of vertically oriented semiconductor structures while maintaining a dopant profile  
A method to laser anneal a silicon stack (or a silicon-rich alloy) including a heavily doped region buried beneath an undoped or lightly doped region is disclosed. By F selecting laser energy at a...
7611970 Wafer processing method  
A water processing method for providing a gettering sink effect to a wafer having a plurality of streets which are formed in a lattice pattern on the front surface of a substrate and devices which...
7598160 Method for manufacturing thin film semiconductor  
A method for manufacturing thin film semiconductor device is provided. The semiconductor thin film includes a semiconductor thin film and a gate electrode and has an active region turned into a...
7592274 Method for fabricating semiconductor element  
A method for fabricating a semiconductor element includes the steps of: providing a semiconductor wafer; forming an oxide layer on the semiconductor wafer; carrying out a high-temperature thermal...
7589027 Method of manufacturing semiconductor device  
Provided is a method of manufacturing a semiconductor device. A first gate oxide layer is formed on a semiconductor substrate in which a core region and an input/output region are defined. The...
7585793 Method for applying a high temperature heat treatment to a semiconductor wafer  
The invention provides methods for applying high temperature treatments to semiconductor wafers that limit surface tearing-off defects and surface particle contamination. In preferred embodiments,...
7585791 Laser irradiation method, laser irradiation apparatus and method for manufacturing semiconductor device  
In conducting laser annealing using a CW laser or a quasi-CW laser, productivity is not high as compared with an excimer laser and thus, it is necessary to further enhance productivity. According...
7585790 Method for forming semiconductor device  
A method of forming a semiconductor device. The method comprises steps of providing a substrate having a first transistor, a second transistor and non-salicide device formed thereon and the...
7579285 Atomic layer deposition method for depositing a layer  
The invention is related to an ALD method for depositing a layer including the steps of a) providing a semiconductor substrate in a reactor; b) providing a pulse of a first precursor gas into the...
7569503 Contact doping and annealing systems and processes for nanowire thin films  
Embodiments of the present invention are provided for improved contact doping and annealing systems and processes. In embodiments, a plasma ion immersion implantation (PIII) process is used for...
7557050 Method of manufacturing polysilicon thin film and method of manufacturing thin film transistor having the same  
In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy...
7521383 Manufacturing method of semiconductor device  
A first layer (an insulating layer), a second layer (a metal layer), and a third layer (an insulating layer) are formed over a substrate. Then, a fourth layer including a semiconductor element is...
7521378 Low temperature process for polysilazane oxidation/densification  
Semiconductor devices, structures and systems that utilize a polysilazane-based silicon oxide layer or fill, and methods of making the oxide layer are disclosed. In one embodiment, a polysilazane...
7510986 Production method for semiconductor device  
In a production process for a semiconductor device employing an SiC semiconductor substrate ( 1 ), the SiC semiconductor substrate ( 1 ) is mounted on a susceptor ( 23 ), and a C heating member ( 3...
7510959 Method of manufacturing a semiconductor device having damascene structures with air gaps  
A method of manufacturing a semiconductor device having damascene structures with air gaps is provided. In one embodiment, the method comprises the steps of depositing and patterning a disposable...
7507648 Methods of fabricating crystalline silicon film and thin film transistors  
A method by which solid phase crystallization (SPC) thermal budget for crystallizing an undoped (or a lightly doped) amorphous Si (a-Si) is significantly reduced. First, a composite layer structure...
7485575 Method of manufacturing semiconductor device  
A semiconductor substrate is inserted into a heat treatment apparatus at a low temperature ranging from room temperature to about 50° C., and organic substances included in a metal on the...
7485551 Semiconductor-on-insulator type heterostructure and method of fabrication  
The present invention relates to a method of fabricating a semiconductor-on-insulator-type heterostructure that includes at least one insulating layer interposed between a receiver substrate of...
7479466 Method of heating semiconductor wafer to improve wafer flatness  
A method of heating-treating a semiconductor wafer is provided. In one embodiment, a first layer is formed over a first side of a substrate. A second layer is formed over the first layer and over a...
7479465 Transfer of stress to a layer  
A strained semiconductor layer is achieved by a method for transferring stress from a dielectric layer to a semiconductor layer. The method comprises providing a substrate having a semiconductor...
7476597 Methods and systems for laser assisted wirebonding  
The invention provides methods and systems for laser assisted wirebonding. One or more conditioning laser pulses are used to prepare a bonding surface for wirebonding by removing impurities such as...
7473656 Method for fast and local anneal of anti-ferromagnetic (AF) exchange-biased magnetic stacks  
A method of thermally treating a magnetic layer of a wafer, includes annealing, for a predetermined short duration, a magnetic layer of a single wafer, applying at least one local magnetic field to...
7466907 Annealing process and device of semiconductor wafer  
A device for use in a thermal annealing process for a wafer (T) of material chosen among the semiconductor materials for the purpose of detaching a layer from the wafer at an weakened zone. During...
7465977 Method for producing a packaged integrated circuit  
There is described a method for producing a packaged integrated circuit. The method comprises a first step of building an integrated circuit having a micro-structure suspended above a micro-cavity,...
7465645 Method of detaching a layer from a wafer using a localized starting area  
A method for detaching a layer from a wafer. A weakened zone is created in the wafer to define the layer to be detached and a remainder portion of the wafer, such that the weakened zone includes a...
7439198 Method for fabricating a buried metallic layer in a semiconductor body and semiconductor component having a buried metallic layer  
A method for fabricating a buried metallic layer at a predetermined vertical position in a semiconductor body having a first and second side includes a step of applying a metal layer to one of the...
7439196 Method for manufacturing pattern formed structure  
The main object of the present invention is to provide a method for manufacturing efficiently a pattern formed structure which has a surface having a property-varied pattern and can be used to...
7410355 Method for the heat treatment of substrates  
A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas...
7402533 Masking without photolithography during the formation of a semiconductor device  
A method for forming a semiconductor device comprises forming a dielectric layer over a semiconductor wafer substrate assembly having closely spaced regions, such as a memory transistor array, and...
7402517 Method and apparatus for selective deposition of materials to surfaces and substrates  
Methods are disclosed for depositing materials selectively and controllably from liquid, near-critical, and/or supercritical fluids to a substrate or surface controlling the location and/or...
7402445 Method of forming micro-structures and nano-structures  
Methods of forming a nano-structure for electron extraction are disclosed. One method of forming a nano-structure comprises irradiating an area on a first surface of a thermal conductive film to...
7381632 Semiconductor thin film crystallization device and semiconductor thin film crystallization method  
A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to...
7358200 Gas-assisted rapid thermal processing  
A system, method and apparatus for processing a semiconductor device including a processing chamber and a heating assembly positioned within the processing chamber. The heating assembly including...
7357963 Apparatus and method of crystallizing amorphous silicon  
A sequential lateral solidification apparatus includes a laser generator for generating and emitting a laser beam; an X-Y stage movable in two orthogonal axial directions; and a mask arranged...
7332448 Manufacturing method of semiconductor device and semiconductor manufacturing device  
A manufacturing method of a semiconductor device, comprises; a process of heat-treating a semiconductor substrate under the ordinary pressure and in an oxidizing atmosphere; and a process of...
7326658 Method for preparing nitrogen-doped annealed wafer and nitrogen-doped and annealed wafer  
The present invention provides a method for producing a nitrogen-doped annealed wafer, wherein before a wafer sliced from a silicon single crystal doped with at least nitrogen and polished is...
7309617 MRAM memory cell with a reference layer and method for fabricating  
The invention relates to a method for fabricating a reference layer for MRAM memory cells and an MRAM memory cell equipped with a reference layer of this type. A reference layer of this type...
7300856 Process for detaching layers of material  
A process for detaching two layers of material according to a weakened zone defined between the layers. This process includes the thermal annealing of a structure that incorporates the layers, with...
7294586 Method of processing a substrate, heating apparatus, and method of forming a pattern  
A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image...
7282456 Self-repair and enhancement of nanostructures by liquification under guiding conditions  
In accordance with the invention, the structure of a patterned nanoscale or near nanoscale device (“nanostructure”) is repaired and/or enhanced by liquifying the patterned device in the...
7276175 Semiconductor device fabrication method  
A semiconductor device fabrication method comprises (1) forming a patterned mask layer on an oxide layer of a Mn-containing perovskite type oxide; (2) heat-treating the oxide layer; and (3)...
7232774 Polycrystalline silicon layer with nano-grain structure and method of manufacture  
A method of forming polycrystalline silicon with ultra-small grain sizes employs a differential heating of the upper and lower sides of the substrate of a CVD apparatus, in which the lower side of...
7208696 Method of forming a polycrystalline silicon layer  
A method of forming a polycrystalline silicon layer. An amorphous silicon layer on a substrate is completely melted using a laser beam passed through a mask so as to form a polycrystalline silicon...
7202145 Strained Si formed by anneal  
A semiconductor structure includes a silicon substrate layer, a relaxed silicon-germanium layer on the silicon substrate layer and a strained single crystal silicon layer on the silicon-germanium...
7138344 Method for minimizing slip line faults on a semiconductor wafer surface  
A method for minimizing slip line faults on a surface of a semiconductor wafer that has been obtained using a transfer technique. The method includes heating the semiconductor wafer from an ambient...
7122482 Methods for fabricating patterned features utilizing imprint lithography  
One embodiment of the present invention is a method for generating patterned features on a substrate that includes: (a) forming a first layer on at least a portion of a surface of the substrate,...
7122409 Semiconductor device and a method of manufacturing the same  
To provide a TFT that can operate at a high speed by forming a crystalline semiconductor film while controlling the position and the size of a crystal grain in the film to use the crystalline...
7115503 Method and apparatus for processing thin metal layers  
A method and apparatus for processing a thin metal layer on a substrate to control the grain size, grain shape, and grain boundary location and orientation in the metal layer by irradiating the...
7101817 System and method for determining line widths of free-standing structures resulting from a semiconductor manufacturing process  
A apparatus and method for determining minimum line widths of free standing structures built by a semiconductor (S/C) manufacturing process. Free standing structures are created in a semiconductor...
7101814 Masking without photolithography during the formation of a semiconductor device  
A method for forming a semiconductor device comprises forming a dielectric layer over a semiconductor wafer substrate assembly having closely-spaced regions, such as a memory transistor array, and...
Matches 1 - 50 out of 220 1 2 3 4 5 >