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7618880 |
Apparatus and method for transformation of substrate
A method is disclosed for forming a layer of a wide bandgap material in a non-wide bandgap material. The method comprises providing a substrate of a non-wide bandgap material and converting a layer...
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7605084 |
Method of gap-filling using amplitude modulation radio frequency power
A method of filling a gap on a substrate comprises disposing the substrate, on which the gap is formed, on a susceptor in a chamber; applying a source power to the chamber to generate plasmas into...
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7588803 |
Multi step ebeam process for modifying dielectric materials
According to one embodiment of the invention, a method of modifying a mechanical, physical and/or electrical property of a dielectric layer comprises exposing the dielectric layer to a first dose...
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7585704 |
Method of producing highly strained PECVD silicon nitride thin films at low temperature
A method for increasing the level of stress for amorphous thin film stressors by means of modifying the internal structure of such stressors is provided. The method includes first forming a first...
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7582492 |
Method of doping impurities, and electronic element using the same
The invention provides a method of doping impurities that includes a step of doping impurities in a solid base substance by using a plasma doping method, a step of forming a light antireflection...
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7579287 |
Surface treatment method, manufacturing method of semiconductor device, and manufacturing method of capacitive element
A method for processing an object containing moisture is provided to efficiently remove the moisture and to prevent re-adsorption of the moisture. In particular, the method has a step of removing...
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7576341 |
Lithography systems and methods for operating the same
A lithography system and method for operating the same. The lithography system may include a cathode adapted to emit an electron beam, a beam-homogenizing structure, capable of increasing at least...
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7566482 |
SOI by oxidation of porous silicon
A method in which a SOI substrate structure is fabricated by oxidation of graded porous Si is provided. The graded porous Si is formed by first implanting a dopant (p- or n-type) into a...
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7563718 |
Method for forming tungsten layer of semiconductor device and method for forming tungsten wiring layer using the same
A semiconductor substrate is loaded into a reaction chamber to form a tungsten layer. A source gas including tungsten (W) is introduced into the reaction chamber to grow a crystal nucleus of the...
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7560366 |
Nanowire horizontal growth and substrate removal
The present invention provides processes for producing horizontal nanowires that are separate and oriented and allow for processing directly on a substrate material. The nanowires grow horizontally...
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7557050 |
Method of manufacturing polysilicon thin film and method of manufacturing thin film transistor having the same
In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy...
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7553772 |
Process and apparatus for simultaneous light and radical surface treatment of integrated circuit structure
Process and apparatus provide reactive radicals generated from a remote plasma source which contact a portion of a substrate surface simultaneous with a contact of the same substrate surface with a...
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7524777 |
Method for manufacturing an isolation structure using an energy beam treatment
The invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, among others, may include forming one or more layers of material...
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7524776 |
Surface-activation of semiconductor nanostructures for biological applications
Means and methods for producing surface-activated semiconductor nanoparticles suitable for in vitro and in vivo applications that can fluoresce in response to light excitation. Semiconductor...
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7521382 |
High resistivity silicon structure and a process for the preparation thereof
The present invention generally relates to a high resistivity CZ silicon wafer, or a high resistivity silicon structure derived therefrom, and a process for the preparation thereof. In particular,...
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7521312 |
Method and system for creating self-aligned twin wells with co-planar surfaces in a semiconductor device
A method and system for providing a twin well in a semiconductor device is described. The method and system include providing at least one interference layer and providing a first mask that covers...
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7517776 |
Method for controlling dislocation positions in silicon germanium buffer layers
A method for controlling dislocation position in a silicon germanium buffer layer located on a substrate includes irradiating one or more regions of the silicon germanium layer with a dislocation...
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7514377 |
Plasma generator, ozone generator, substrate processing apparatus and manufacturing method of semiconductor device
To provide a generator capable of generating plasma and ozone with high efficiency and easy to handle, with a simple structure. An electrode part 10 is formed of electrodes 11 and 12 without...
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7498242 |
Plasma pre-treating surfaces for atomic layer deposition
Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Preferred embodiments are directed to providing conformal lining over openings formed in...
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7485473 |
Methods for forming semiconducting device with titanium nitride orientation layer
A method for manufacturing a semiconductor device, the method including the steps of: (a) forming a titanium layer above a substrate; (b) forming a barrier layer above the titanium layer; (c)...
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7482289 |
Methods and apparatus for depositing tantalum metal films to surfaces and substrates
Methods and an apparatus are disclosed for depositing tantalum metal films in next-generation solvent fluids on substrates and/or deposition surfaces useful, e.g., as metal seed layers. Deposition...
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7482288 |
Method for producing a grid cap with a locally increased dielectric constant
A method for producing a semiconductor product. Semiconductor product components are formed in a semiconductor product region of the substrate. A layer made of low-k material is subsequently formed...
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7479466 |
Method of heating semiconductor wafer to improve wafer flatness
A method of heating-treating a semiconductor wafer is provided. In one embodiment, a first layer is formed over a first side of a substrate. A second layer is formed over the first layer and over a...
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7466907 |
Annealing process and device of semiconductor wafer
A device for use in a thermal annealing process for a wafer (T) of material chosen among the semiconductor materials for the purpose of detaching a layer from the wafer at an weakened zone. During...
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7465680 |
Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2
A plasma treatment process for increasing the tensile stress of a silicon wafer is described. Following deposition of a dielectric layer on a substrate, the substrate is lifted to an elevated...
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7459403 |
Method for reducing device and circuit sensitivity to electrical stress and radiation induced aging
In microelectronic circuits involving dielectric/semiconductor interfaces having interstitial sites in the dielectric, a method for hardening these interfaces by introducing a small atomic diameter...
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7456032 |
Method and system for measuring laser induced phenomena changes in a semiconductor device
A method and system for measuring laser induced phenomena changes of at least one of a resistance, a capacitance and an inductance in a semiconductor device. The method comprises interconnecting an...
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7446023 |
High-density plasma hydrogenation
A high-density plasma hydrogenation method is provided. Generally, the method comprises: forming a silicon (Si)/oxide stack layer; plasma oxidizing the Si/oxide stack at a temperature of less than...
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7439197 |
Method of fabricating a capacitor
A method of preparing a semiconductor film on a substrate is disclosed. The method includes arranging an insulating substrate in a deposition chamber and depositing a semiconductor film onto the...
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7410839 |
Thin film transistor and manufacturing method thereof
The present invention provides a thin film transistor in which a substantial length of a channel is shortened to miniaturize a semiconductor device and a manufacturing method thereof. In addition,...
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7396745 |
Formation of ultra-shallow junctions by gas-cluster ion irradiation
Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.
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7387946 |
Method of fabricating a substrate for a planar, double-gated, transistor process
A semiconductor fabrication process includes forming a sacrificial layer on a substrate of a donor wafer and implanting hydrogen ions into the substrate through the sacrificial layer to create a...
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7381943 |
Neutral particle beam processing apparatus
The present invention relates to a neutral particle beam processing apparatus. More specifically, the present invention relates to a neutral particle beam processing apparatus comprising a plasma...
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7372049 |
Lithographic apparatus including a cleaning device and method for cleaning an optical element
An EUV lithographic apparatus includes an EUV radiation source, an optical element and a cleaning device. The cleaning device includes a hydrogen radical source and a flow tube in communication...
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7358200 |
Gas-assisted rapid thermal processing
A system, method and apparatus for processing a semiconductor device including a processing chamber and a heating assembly positioned within the processing chamber. The heating assembly including...
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7357963 |
Apparatus and method of crystallizing amorphous silicon
A sequential lateral solidification apparatus includes a laser generator for generating and emitting a laser beam; an X-Y stage movable in two orthogonal axial directions; and a mask arranged...
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7351669 |
Method of forming a substantially closed void
To form a substantially closed void between two structures on a substrate, a flowable liquid dielectric material is deposited to fill partially the space between the structures, and a surface is...
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7314838 |
Method for forming a high density dielectric film by chemical vapor deposition
A method for forming a high density dielectric film by chemical vapor deposition. The method comprises: (a) a substrate is provided in a processing chamber; (b) a first gas is introduced into the...
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7294590 |
System and method for removing charges with enhanced efficiency
Method and apparatus for removing and neutralizing charges. The method includes loading a structure into a chamber. The structure includes a first surface and a plurality of charges away from the...
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7288294 |
Method of crystallizing amorphous silicon using nanoparticles
A method of crystallizing amorphous silicon, wherein the method includes supplying nanoparticles over a surface of an amorphous silicon layer; intermittently melting nanoparticles that reach the...
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7265038 |
Method for forming a multi-layer seed layer for improved Cu ECP
A copper filled damascene structure and method for forming the same the method including providing a substrate comprising a semiconductor substrate; forming an insulator layer on the substrate;...
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7262142 |
Semiconductor device fabrication method
The semiconductor device fabrication method comprises the step of forming a first porous insulation film 38 over a semiconductor substrate 10; the step of forming a second insulation film 40 ...
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7256148 |
Method for treating a wafer edge
A method for treating an edge portion of a wafer with a plasma or select chemical formulation in order to enhance adhesion characteristics and inhibit delamination of a layer of material from the...
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7232773 |
Liquid drop jetting apparatus using charged beam and method for manufacturing a pattern using the apparatus
The invention drastically improves the accuracy of adhesion position of a liquid drop discharged by a liquid drop discharge method and makes it possible to form a fine and highly accurate pattern...
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7229911 |
Adhesion improvement for low k dielectrics to conductive materials
Methods are provided for processing a substrate for depositing an adhesion layer between a conductive material and a dielectric layer. In one aspect, the invention provides a method for processing...
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7220497 |
Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
Yttria-coated ceramic components of semiconductor material processing apparatuses include a substrate and at least one yttria-containing coating on the substrate. The components are made by...
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7208396 |
Permanent adherence of the back end of a wafer to an electrical component or sub-assembly
A plurality of successive layers are firmly adhered to one another and to a wafer surface and an electrical component or sub-assembly even when the wafer surface is not even and the layers are...
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7203565 |
Temperature abnormality detection method and semiconductor manufacturing apparatus
A semiconductor manufacturing apparatus includes: a hot plate that heats an article to be processed; a temperature control section that controls temperature of the hot plate; a main body control...
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7202153 |
Method for forming, under a thin layer of a first material, portions of another material and/or empty areas
A method for forming a empty area under a layer of a given material, including forming on a substrate a stacking of a photosensitive layer and of a layer of the given material; insolating a portion...
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7199048 |
Method for preventing metalorganic precursor penetration into porous dielectrics
Methods and structures are provided for conformal lining of dual damascene structures in semiconductor devices that contain porous or low k dielectrics. Features, such as trenches and contact vias...
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