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7674650 Semiconductor device and manufacturing method thereof  
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide...
7670966 Method of processing a semiconductor substrate by thermal activation of light elements  
Method of processing a substrate containing at least one semiconductor of the Si X A Y type and comprising at least four separate types of light elements, comprising at least the following steps: ...
7608853 Semiconductor light emitting diode that uses silicon nano dot and method of manufacturing the same  
Provided is a semiconductor light emitting diode that uses a silicon nano dot and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting layer that...
7588803 Multi step ebeam process for modifying dielectric materials  
According to one embodiment of the invention, a method of modifying a mechanical, physical and/or electrical property of a dielectric layer comprises exposing the dielectric layer to a first dose...
7569693 Naphthalene-based semiconductor materials and methods of preparing and use thereof  
Provided are mono- and diimide naphthalene compounds for use in the fabrication of various device structures. In some embodiments, the naphthalene core of these compounds are mono-, di-, or...
7517776 Method for controlling dislocation positions in silicon germanium buffer layers  
A method for controlling dislocation position in a silicon germanium buffer layer located on a substrate includes irradiating one or more regions of the silicon germanium layer with a dislocation...
7510986 Production method for semiconductor device  
In a production process for a semiconductor device employing an SiC semiconductor substrate ( 1 ), the SiC semiconductor substrate ( 1 ) is mounted on a susceptor ( 23 ), and a C heating member ( 3...
7504345 Method for eliminating defects from semiconductor materials  
Using a helium cryostat, the temperature for a substrate wafer(s) is reduced to 2.2 Kelvin over a period of twenty-four hours. Next, a soak segment will hold the temperature of the substrate wafer...
7459406 Laser processing unit, laser processing method, and method for manufacturing semiconductor device  
Objects of the present invention is to reduce a number of scanning a linear laser, to shorten the amount of time for laser annealing, and to reduce a manufacturing process, a manufacturing time,...
7256147 Porous body and manufacturing method therefor  
It is an object of the present invention to provide a porous body containing an oxide semiconductor in which more efficient photocatalytic reactions and photoelectrode reactions occur. The present...
7227172 Group-III-element nitride crystal semiconductor device  
In a Group-III-element nitride semiconductor device including a Group-III-element nitride crystal layer stacked on a Group-III-element nitride crystal substrate, the substrate is produced by...
7205033 Method for forming polycrystalline silicon film of polycrystalline silicon TFT  
Disclosed is a method for forming a polycrystalline silicon film of a polycrystalline silicon thin film transistor. The method includes a step of crystallizing an amorphous silicon film deposited...
7179678 EBIC response enhancement in type III-VI semiconductor material on silicon  
A method of processing a type III–VI semiconductor material on a silicon substrate to improve minority carrier diffusion length and EBIC response is provided. The semiconductor material is heated...
7151060 Device and method for thermally treating semiconductor wafers  
A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive...
7122734 Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers  
A method of reducing propagation of threading dislocations into active areas of an optoelectronic device having a III–V material system includes growing a metamorphic buffer region in the...
7078329 Method of manufacturing silicon carbide semiconductor device  
An insulating film ( 2 ) is formed on a semiconductor substrate ( 1 ) formed of silicon carbide. A contact hole ( 3 ) is formed in the insulating film ( 2 ) to expose a part of the upper surface of...
7071042 Method of fabricating silicon integrated circuit on glass  
A method of fabricating a silicon integrated circuit on a glass substrate includes preparing a glass substrate; fabricating a silicon layer on the glass substrate; implanting ions into the active...
7041577 Process for manufacturing a substrate and associated substrate  
A process for producing a substrate is described. The process includes providing an assembly having a first layer weakly bonded to a temporary support at an interface therebetween. At least a...
7033961 Epitaxy/substrate release layer  
The present invention relates to an epitaxial structure having one or more structural epitaxial layers, including a gallium nitride (GaN) layer, which is deposited on a substrate, and a method of...
7026258 Method for making thin-film semiconductors based on I-III-VI2 compounds, for photovoltaic applications  
The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe 2 ; then rapidly annealing said...
7018941 Post treatment of low k dielectric films  
A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric...
6962884 Monitoring low temperature rapid thermal anneal process using implanted wafers  
A method for processing integrated circuit devices. The method includes providing a monitor wafer, which comprising a silicon material. The method introduces a plurality of particles within a depth...
6960486 Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber material  
A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr 2+ thin film of controllable thickness on the ZnS...
6946368 Reduction of native oxide at germanium interface using hydrogen-based plasma  
A germanium substrate is positioned in a process chamber. A plasma is generated from a treatment gas that includes a flow of a hydrogen-containing gas. The plasma is provided to the process chamber...
6905983 Apparatus and method for manufacturing semiconductor devices, and semiconductor device  
An apparatus of manufacturing a semiconductor device is disclosed which comprises at least one heat/light source opposing at least one major surface of a to-be-processed substrate, the heat/light...
6903032 Method for preparing a semiconductor wafer surface  
A method for preparing a semiconductor wafer wherein rapid thermal annealing is conducted to smooth a free surface of a superficial zone that is supported by the wafer. The improvement includes...
6893894 Method of manufacturing a compound semiconductor by heating a layered structure including rare earth transition metal  
A method of manufacturing a compound semiconductor includes the steps of forming a layered structure of dielectric layers including oxygen or sulfur, and an inter layer formed between the...
6881658 Process of and apparatus for heat-treating II-VI compound semiconductors and semiconductor heat-treated by the process  
A process of heat-treating II-VI compound semiconductors reduces the electrical resistivity without the decrease in crystallinity resulting from the increase in dislocation density. The process...
6861335 Method for fabricating a semiconductor device that includes light beam irradiation to separate a semiconductor layer from a single crystal substrate  
A spacer layer is formed on a single-crystal substrate and an epitaxially grown layer composed of a group III-V compound semiconductor layer containing a nitride or the like is further formed on...
6861340 Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device  
A method of heat-treating a nitride compound semiconductor layer, comprising heating a nitride compound semiconductor layer doped with a p-type impurity at a temperature that is at least 200° C....
6833332 Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same  
A method of fabricating relaxed SiGe buffer layers with low threading dislocation densities on silicon-on-insulator (SOI) substrates is provided. The relaxed SiGe buffer layers are fabricated by...
6818569 Method of fabricating annealed wafer  
A method of fabricating an annealed wafer of high quality by forming a defect-free active region of a device and controlling an irregular resistivity characteristic. The method includes a first...
6812039 Method for producing a magnetic tunnel contact and magnetic tunnel contact  
Disclosed is a method for producing a magnetic tunnel contact. A metal layer is disposed on a first ferromagnetic layer ( 1 ) and is oxidised for producing an insulation layer ( 3 ). A second...
6780796 Method of forming relaxed SiGe layer  
A method of forming a SiGe layer having a relatively high Ge content includes preparing a silicon substrate; depositing a layer of strained SiGe to a thickness of between about 100 nm to 500 nm,...
6750158 Method for producing a semiconductor device  
A first semiconductor layer is formed on a mother substrate, and the mother substrate is irradiated with irradiation light from a surface opposite to the first semiconductor layer, so that a...
6737288 Method for fabricating a semiconductor device  
A heterojunction structure has an Al x Ga 1−x As layer (0<x≦1), on which an Al y Ga 1−y As layer (0≦y≦1 and y<x) is provided and having a band gap energy smaller than that of the Al...
6737367 UV-supported thermal treatment of compound semiconductors in RTP systems  
A method of formally treating at least one layer for activating foreign atoms passivated in the layer by hydrogen is provided. The at least one layer is heated, in a first time interval of less...
6683198 Group(III)-metal-hydrides with a guanidino-type ligand  
A compound of formula (I) wherein X is aluminium, gallium or indium; each Y, which may be the same or different, is nitrogen or phosphorus; R 1 and R 2 , which may be the same or different, are...
6667252 Method of manufacturing compound semiconductor substrate  
A compound semiconductor substrate is manufactured by forming a higher-quality compound semiconductor layer having a smaller number of crystalline defects on a single-crystal substrate, and...
6620643 Light-emitting device using group III nitride compound semiconductor  
A group III nitride compound semiconductor light-emitting device provides a multiple quantum well (MQW) active layer formed on an intermediate layer. The MQW active layer may include, for example,...
6586328 Method to metallize ohmic electrodes to P-type group III nitrides  
The metallization method of the invention uses an oxide-forming metal layer to improve adhesion and getter surface contamination or oxides. A high work function metal is then formed on the...
6573117 GaN related compound semiconductor and process for producing the same  
A layer comprising cobalt (Co) is formed on a p + layer by vapor deposition, and a layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a...
6563145 Methods and apparatus for a composite collector double heterojunction bipolar transistor  
A compound collector double heterojunction bipolar transistor (CCHBT) incorporates a collector comprising two layers: a wide bandgap collector region (e.g., GaAs), and a narrow bandgap collector...
6534421 Method to fabricate thin insulating film  
The invention grows SiO 2 films over silicon at temperatures as low as room temperature and at pressures as high as 1 atmosphere. The lower temperature oxidation is made possible by creation of...
6506692 Method of making a semiconductor device using a silicon carbide hard mask  
A method of converting a hydrophobic surface of a silicon carbide layer to a hydrophilic surface is described. That method comprises forming a silicon carbide containing layer on a substrate, then...
6465374 Method of surface preparation  
A semiconductor substrate is heated via exposure to ultraviolet radiation substantially in the absence of a halogen containing chemical and subsequently exposed to a halogen-containing gas in the...
6432847 Method of activating P-type compound semiconductor by using lasers for reducing the resistivity thereof  
A novel method of using lasers for generating driving energy for activating P-type compound semiconductor films and reducing the resistivity thereof. The P-type compound semiconductor films are...
6420283 methods for producing compound semiconductor substrates and light emitting elements  
Methods are provided for producing a compound semiconductor substrate including: a mica substrate; and a III-V group compound semiconductor layer containing nitrogen as its main component grown on...
6313016 Method for producing epitaxial silicon germanium layers  
A method for producing relaxed epitaxy layers on a semiconductor substrate by an epitaxy process, particularly molecular beam epitaxy, with a hydrogen source, wherein the following steps occur...
6303404 Method for fabricating white light emitting diode using InGaN phase separation  
Disclosed is a method for fabricating a white LED which comprises, as a single active layer, an InGaN thin film which enables emission of white light. The InGaN thin film is constructed by taking...
Matches 1 - 50 out of 219 1 2 3 4 5 >