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9029739 Apparatus and methods for rapid thermal processing  
Embodiments of the present invention provide apparatus and methods for performing rapid thermal processing. One embodiment of the present invention provides an apparatus for processing a...
9029251 Transistor performance using a two-step damage anneal  
A two-step thermal treatment method consists of performing ion implantation in a silicon substrate of the semiconductor device. A first thermal treatment procedure is performed on the...
9029809 Movable microchamber system with gas curtain  
A movable microchamber system with a gas curtain is disclosed. The microchamber system has a top member with a light-access feature and a stage assembly that supports a substrate to be processed....
9023741 Method for surface treatment  
A method for surface treatment is disclosed which relates to the technical field of producing thin-film devices by printing and solves the problem that the treatment of a substrate surface in the...
9023739 Site-isolated rapid thermal processing methods and apparatus  
Methods and apparatus are described that allow the investigation of process variables used in RTP systems to be varied in a combinatorial manner across a plurality of site-isolated regions...
9023740 Heat treatment method and heat treatment apparatus for heating substrate by irradiating substrate with light  
A surface of a semiconductor wafer with a gate of a high dielectric constant film formed thereon is heated to a target temperature for a short time by irradiating the surface with a flash of...
9018080 Wafer processing method  
A wafer processing method of dividing a wafer along a plurality of crossing streets formed on the wafer to obtain individual chips. The wafer processing method includes a modified layer forming...
9018110 Apparatus and methods for microwave processing of semiconductor substrates  
Methods and apparatus for radiation processing of semiconductor substrates using microwave or millimeter wave energy are provided. The microwave or millimeter wave energy may have a frequency...
9012337 Platen control  
A system and method for maintain a desired degree of platen flatness is disclosed. A laser system is used to measure the flatness of a platen. The temperature of the platen is then varied to...
9012338 Laser annealing method and laser annealing apparatus  
In the present invention, At least one row of lens arrays, in which a plurality of lenses are arranged in a direction intersecting with the conveying direction of a substrate to correspond to the...
9006104 Methods of forming metal silicide regions on semiconductor devices using millisecond annealing techniques  
In one example, the method includes forming a metal layer on a silicon-containing structure, after forming the metal layer, performing an ion implantation process to implant silicon atoms into at...
8999865 Laser annealing apparatus and laser annealing method  
A laser annealing apparatus carries out an annealing treatment an amorphous silicon film on a TFT substrate. The apparatus includes: a mask having a plurality of apertures; a microlens substrate...
8999864 Silicon wafer and method for heat-treating silicon wafer  
A silicon wafer for preventing a void defect in a bulk region from becoming source of contamination and slip generation in a device process is provided. And a heat-treating method thereof for...
8993461 Method for curing defects in a semiconductor layer  
A method for curing defects associated with the implantation of atomic species into a semiconductor layer transferred onto a receiver substrate, wherein the semiconductor layer is thermally...
8989899 Transfer system  
A transfer system according to an embodiment includes a robot and a determination unit. The robot includes robot hands that hold a workpiece in a thin plate shape and that are located at different...
8987123 Heat treatment apparatus and heat treatment method for heating substrate by irradiating substrate with flash of light  
After the completion of the transport of a semiconductor wafer into a chamber, the flow rate of nitrogen gas supplied into the chamber is decreased. In this state, a preheating treatment and flash...
8987645 Substrate processing apparatus having rotatable slot-type antenna and method of manufacturing semiconductor device using the same  
Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device that are capable of uniformly heating a substrate while reducing an increase in substrate...
8987148 Semiconductor device manufacturing method  
With a stage kept in an as-heated state, a semiconductor wafer is placed over the stage. Then, with the elapse of a first time, a controller causes a pressure inside a vacuum chamber to rise to a...
8980769 Multi-station sequential curing of dielectric films  
The present invention provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity,...
8975139 Manufacturing method of silicon carbide semiconductor device  
A manufacturing method of a silicon carbide semiconductor device includes: forming a drift layer on a silicon carbide substrate; forming a base layer on or in a surface portion of the drift layer;...
8969220 Methods and systems for laser processing of coated substrates  
Examples of methods and systems for laser processing of materials are disclosed. Methods and systems for singulation of a wafer comprising a coated substrate can utilize a laser outputting light...
8956885 Method and process to reduce stress based overlay error  
Thermal processing and alignment methods and processes used during fabrication of semiconductor devices are provided. One method includes, for instance: obtaining a device after at least one laser...
8956944 Semiconductor device and method for manufacturing the same  
In the transistor including an oxide semiconductor film, which includes a film for capturing hydrogen from the oxide semiconductor film (a hydrogen capture film) and a film for diffusing hydrogen...
8951816 Film forming method  
One embodiment of the present invention is a film forming method comprising: arranging a surface of a film formation substrate 10 including an absorption layer 12 on a first substrate 11 and a...
8952429 Transistor and method for forming the same  
The present invention relates to a stress-enhanced transistor and a method for forming the same. The method for forming the transistor according to the present invention comprises the steps of...
8946098 Device for a laser lift-off method and laser lift-off method  
A device is intended for a laser lift-off method to sever at least one layer from a carrier. The device includes a laser that generates pulsed laser radiation and at least one beam splitter. The...
8946097 Semiconductor device and manufacturing method thereof  
A manufacturing method of a semiconductor device, which includes the steps of forming a gate electrode layer over a substrate having an insulating surface, forming a gate insulating layer over the...
8936834 Computer readable medium for high pressure gas annealing  
Novel methods and apparatuses for annealing semiconductor devices in a high pressure gas environment. According to an embodiment, the annealing vessel has a dual chamber structure, and potentially...
8926321 Heating method for maintaining a stable thermal budget  
The present invention discloses a heating method for maintaining a stable thermal budget. By following the primary procedure with a virtual procedure in such a manner that the total duration of...
8927419 Chip comprising an integrated circuit, fabrication method and method for locally rendering a carbonic layer conductive  
A method can be used for locally rendering a carbonic isolating layer conductive. In one embodiment, a laser beam is directed onto the carbonic isolating layer so as to convert amorphous carbon of...
8921239 Process for recycling a substrate  
A process for recycling a support substrate of a material substantially transparent to at least a wavelength of electromagnetic radiation. The process includes providing an initial substrate;...
8921193 Pre-gate dielectric process using hydrogen annealing  
The preferred embodiment of the present invention provides a novel method of forming MOS devices using hydrogen annealing. The method includes providing a semiconductor substrate including a first...
8916482 Method of making a lithography mask  
A method of making a lithography mask with a stress-relief treatment is disclosed. The method includes providing a substrate and depositing an opaque layer on the substrate. The opaque layer is...
8912103 Method of fabricating and correcting nanoimprint lithography templates  
A method of fabricating a nanoimprint lithography template includes installing a reticle on a reticle stage of scanning lithography equipment having a light source, the reticle stage and a...
8912102 Laser annealing  
A system for and method of processing an article such as a semiconductor wafer is disclosed. The wafer includes first and second surfaces which are segmented into a plurality of first and second...
8906749 Method for fabricating a semiconductor device  
A semiconductor device and a method for making a semiconductor device are disclosed. In an embodiment a semiconductor device includes a semiconductor chip and a fiber reinforced encapsulation...
8906742 Two-beam laser annealing with improved temperature performance  
Systems and methods are disclosed for performing laser annealing in a manner that reduces or minimizes wafer surface temperature variations during the laser annealing process. The systems and...
8900952 Gate stack including a high-k gate dielectric that is optimized for low voltage applications  
A method of forming a semiconductor device that includes forming a high-k gate dielectric layer on a semiconductor substrate, wherein an oxide containing interfacial layer can be present between...
8896105 Microelectronic devices and methods for manufacturing microelectronic devices  
Microelectronic devices and methods for manufacturing microelectronic devices are disclosed herein. In one embodiment, a method includes constructing a radiation sensitive component in and/or on a...
8895416 Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material  
Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a...
8895942 Dielectric treatment module using scanning IR radiation source  
A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of...
8889569 Systems and methods for non-periodic pulse sequential lateral soldification  
The disclosed systems and method for non-periodic pulse sequential lateral solidification relate to processing a thin film. The method for processing a thin film, while advancing a thin film in a...
8888916 Thermal reactor with improved gas flow distribution  
Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for...
8884293 Display device, method of manufacturing the same, and electronic unit  
A display device includes: a thin film transistor; and a wiring layer; the thin film transistor including a control electrode, a semiconductor layer facing the control electrode, a first electrode...
8865501 Method of fabricating thermoelectric material and thermoelectric material fabricated thereby  
The object of the present invention is to provide a method of fabricating a thermoelectric material and a thermoelectric material fabricated thereby. According to the present invention, since...
8865602 Edge ring lip  
Embodiments of the invention generally relate to a support ring to support a substrate in a process chamber. In one embodiment, the support ring comprises an inner ring, an outer ring connecting...
8865556 Using fast anneal to form uniform Ni(Pt)Si(Ge) contacts on SiGe layer  
Techniques for forming a smooth silicide without the use of a cap layer are provided. In one aspect, a FET device is provided. The FET device includes a SOI wafer having a SOI layer over a BOX and...
8866271 Semiconductor device manufacturing method, substrate processing apparatus and semiconductor device  
A semiconductor device manufacturing method includes loading a substrate, on which a high-k film is formed, into a processing chamber, performing a reforming process by heating the high-k film...
8865603 Laser annealing systems and methods with ultra-short dwell times  
Laser annealing systems and methods for annealing a semiconductor wafer with ultra-short dwell times are disclosed. The laser annealing systems can include one or two laser beams that at least...
8859436 Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon  
Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a...