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7622400 Method for improving mechanical properties of low dielectric constant materials  
Methods of forming a dielectric layer having a low dielectric constant and high mechanical strength are provided. The methods involve depositing a sub-layer of the dielectric material on a...
7585789 Method for forming porous insulation film  
A method of forming a porous film on a semiconductor substrate includes: supplying a silicon compound containing at least one Si—O bond in its molecule in a gaseous phase into a reaction chamber;...
7579271 Method for forming low dielectric constant fluorine-doped layers  
A method for forming a semiconductor device is provided. In one embodiment, the method includes providing a semiconductor substrate with a surface region. The surface region includes one or more...
7504343 Semiconductor device and method for manufacturing the same  
An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film...
7470454 Non-thermal process for forming porous low dielectric constant films  
Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In...
RE40507 Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG  
A method of forming a pre-metal dielectric film having good as deposited gapfill characteristics, as well as good mobile-ion gettering capability. The method involves first depositing a layer of...
7419919 Method of manufacturing semiconductor device  
A method for manufacturing a semiconductor device, in which a substrate is disposed in a chamber and a fluorine-containing silicon oxide film is formed on the substrate using a plasma CVD process....
7410916 Method of improving initiation layer for low-k dielectric film by digital liquid flow meter  
A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid...
7396779 Electronic apparatus, silicon-on-insulator integrated circuits, and fabrication methods  
An electronic apparatus includes an insulative substrate containing an aluminum-based glass and a layer containing a semiconductive material over the substrate. The insulative substrate can include...
7368384 Film formation apparatus and method of using the same  
A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation...
7297640 Method for reducing argon diffusion from high density plasma films  
A two-step high density plasma-CVD process is described wherein the argon content in the film is controlled by using two different argon concentrations in the argon/silane/oxygen gas mixture used...
7273822 Methods and apparatus for forming thin films for semiconductor devices  
Methods and apparatus are provided for forming thin films for semiconductor devices, which enable supplying and removing reactants containing constituent elements of a thin film to be formed, by...
7253121 Method for forming IMD films  
A method for forming IMD films. A substrate is provided. A plurality of dielectric films are formed on the substrate, wherein each of the dielectric layers are deposited in-situ in one chamber with...
7253084 Deposition from liquid sources  
A liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process. The injector is connected...
7241706 Low k ILD layer with a hydrophilic portion  
Embodiments of the invention provide a relatively hydrophilic layer in a low k dielectric layer. The hydrophilic layer may be formed by exposing the dielectric layer to light having enough energy...
7241703 Film forming method for semiconductor device  
A method of forming films in a semiconductor device that can appropriately control a resistance value of a thin film resistance on an ozone TEOS film while preventing a metal thin film from...
7220685 Method for depositing porous films  
A processing method for depositing porous silica and doped silica films is provided. The method uses a cyclic scheme wherein each cycle comprises first codepositing silica with silicon, then...
7189659 Method for fabricating a semiconductor device  
A method for fabricating a semiconductor device comprises the step of depositing an insulation film 32 a with a first pressure set in a deposition chamber; the step of gradually decreasing the...
7176147 Combination insulator and organic semiconductor formed from self-assembling block co-polymers  
A semiconductor structure including an insulator layer formed of a first polymer. The structure also includes an organic semiconductor layer formed of a second polymer. The polymers self-assemble...
7166546 Planarization for integrated circuits  
A method of planarizing a layer of an integrated circuit. In one embodiment, a liquid film is applied over the layer, using extrusion coating techniques. In another embodiment, the layer itself may...
7148157 Use of phoslon (PNO) for borderless contact fabrication, etch stop/barrier layer for dual damascene fabrication and method of forming phoslon  
A method of forming phoslon (PNO) comprising the following steps. A CVD reaction chamber having a reaction temperature of from about 300 to 600° C. is provided. From about 10 to 200 sccm PH 3 ...
7144824 Method for controlling the properties of DARC and manufacturing DARC  
A method for controlling the properties of a dielectric anti-reflective coating (DARC) is provided. In the process of forming the DARC, a nitrogen-containing gas is added to a reaction gas...
7138607 Determining method of thermal processing condition  
The invention is a method of determining a set temperature profile of a method of controlling respective substrate temperatures of plurality of groups in accordance with respective corresponding...
7132374 Method for depositing porous films  
A processing method for depositing porous silica and doped silica films is provided. The method uses a cyclic scheme wherein each cycle comprises first codepositing silica with silicon, then...
7125815 Methods of forming a phosphorous doped silicon dioxide comprising layer  
This invention includes methods of forming phosphorus doped silicon dioxide comprising layers, and methods of forming trench isolation in the fabrication of integrated circuitry. In one...
7117064 Method of depositing dielectric films  
A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon...
7112543 Methods of forming assemblies comprising silicon-doped aluminum oxide  
The invention encompasses a method of forming a silicon-doped aluminum oxide. Aluminum oxide and silicon monoxide are co-evaporated. Subsequently, at least some of the evaporated aluminum oxide and...
7105463 Load lock chamber having two dual slot regions  
Provided herein is a substrate processing system, which comprises a cassette load station; a load lock chamber; a centrally located transfer chamber; and one or more process chambers located about...
7101787 System and method for minimizing increases in via resistance by applying a nitrogen plasma after a titanium liner deposition  
A system and method is disclosed for minimizing increases in via resistance by applying a nitrogen plasma after a titanium liner deposition. A via in a semiconductor device is formed by placing a...
7081376 Kinetically sprayed aluminum metal matrix composites for thermal management  
Disclosed is a method for forming a heat sink laminate and a heat sink laminate formed by the method. In the method a particle mixture is formed from a metal, an alloy or mixtures thereof with a...
7078356 Low K interlevel dielectric layer fabrication methods  
A low k interlevel dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. An oxide comprising interlevel dielectric layer...
7064087 Phosphorous-doped silicon dioxide process to customize contact etch profiles  
A method for depositing a doped silicon dioxide layer is provided that allows the dopant concentration in the silicon dioxide layer to be controlled throughout the layer. By controlling the dopant...
7060323 Method of forming interlayer insulating film  
A material containing, as a main component, an organic silicon compound represented by the following general formula: R 1 x Si(OR 2 ) 4-x...
7052552 Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD  
A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma...
7041530 Method of production of nano particle dispersed composite material  
A method of the production of a nanoparticle dispersed composite material capable of controlling a particle size and a three dimensional arrangement of the nanoparticles is provided. The method of...
7030045 Method of fabricating oxides with low defect densities  
A method and system for forming a low defect oxide in a plasma processing chamber. By pulsing at least one of an RF power source and a processing gas, the growth of the oxide can be regulated....
7001854 Hydrogen-based phosphosilicate glass process for gap fill of high aspect ratio structures  
Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.13 micron) gaps with significantly...
6943126 Deuterium incorporated nitride  
A method of forming a semiconductor structure comprises forming an etch-stop layer comprising nitride, on a stack. The stack is on a semiconductor substrate, and the stack comprises (i) a gate...
6893983 Method for depositing a very high phosphorus doped silicon oxide film  
A thermal activated SACVD method for depositing a phosphorus oxide layer onto a silicon oxide wafer comprising the steps of: loading an SACVD device with a silicon oxide wafer; depositing a...
6861366 Packaged semiconductor device having stacked die  
The present invention provides a packaged semiconductor device that includes two semiconductor die. The first semiconductor die is attached to a package substrate using adhesive. A first set of...
6852649 Multi-step high density plasma (HDP) process to obtain uniformly doped insulating film  
A method of forming an essentially uniform doped insulating layer is disclosed. Variations in a substrate temperature that may result in a dopant gradient within a doped insulating layer can be...
6852595 Method of manufacturing a flash memory cell  
Methods of manufacturing flash memory cells. During a cleaning process after an etching process for forming a control gate is performed, polymer remains at the sidewall of a tungsten silicide...
6831015 Fabrication method of semiconductor device and abrasive liquid used therein  
A fabrication method of a semiconductor device improved in the polishing rate of an insulation film and less likely to generate a defect during polishing is obtained. In this fabrication of a...
6818558 Method of manufacturing a dielectric layer for a silicon-oxide-nitride-oxide-silicon (SONOS) type devices  
A method of forming a charge storing layer is disclosed. According to an embodiment, a method may include the steps of forming a first portion of a charge storing layer with a first gas flow rate...
6812043 Method for forming a carbon doped oxide low-k insulating layer  
A method for forming a dielectric insulating layer with a reduced dielectric constant and increased hardness for semiconductor device manufacturing including providing a semiconductor wafer having...
6797646 Method of nitrogen doping of fluorinated silicate glass (FSG) while removing the photoresist layer  
Embodiments of the present invention provide nitrogen doping of a fluorinated silicate glass (FSG) layer to improve adhesion between the nitrogen-containing FSG layer and other layers such as...
6787477 Methods of forming dielectric layers and methods of forming capacitors  
Methods of forming dielectric layers and methods of forming capacitors are described. In one embodiment, a substrate is placed within a chemical vapor deposition reactor. In the presence of...
6784121 Integrated circuit dielectric and method  
A xerogel aging system includes an aging chamber ( 190 ) with inlets and outlet and flows a gel catalyst in gas phase over a xerogel precursor film on a semiconductor wafer. Preferred embodiments...
6777352 Variable flow deposition apparatus and method in semiconductor substrate processing  
In one embodiment of the present inventions, an exhaust outlet in a vacuum processing chamber includes a nonsealing flow restrictor which can facilitate rapid opening and closing of the flow...
6770332 Method for forming film by plasma  
In a case where a CF film is used as an interlayer dielectric file for a semiconductor device, when a wiring of tungsten is formed, the CF film is heated to a temperature of, e g., about 400 to...
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