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7642204 Methods of forming fluorine doped insulating materials  
In one aspect, the invention includes a method of forming an insulating material comprising: a) providing a substrate within a reaction chamber; b) providing reactants comprising a Si, F and ozone...
7642202 Methods of forming moisture barrier for low k film integration with anti-reflective layers  
A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon,...
7633125 Integration of silicon boron nitride in high voltage and small pitch semiconductors  
Integration of silicon boron nitride in high voltage semiconductors is generally described. In one example, a microelectronic apparatus includes a semiconductor substrate upon which transistors of...
7629272 Ultraviolet assisted porogen removal and/or curing processes for forming porous low k dielectrics  
Processes for forming porous low k dielectric materials from low k dielectric films containing a porogen material include exposing the low k dielectric film to ultraviolet radiation. In one...
7626217 Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices  
Group III-Nitride semiconductor device structures and methods of fabricating Group III-Nitride structures are provided that include an electrically conductive Group III-Nitride substrate, such as a...
7618902 Plasma treatment of a semiconductor surface for enhanced nucleation of a metal-containing layer  
A method for forming a dielectric layer is provided. The method may include providing a semiconductor surface and etching a thin layer of the semiconductor substrate to expose a surface of the...
7615490 Method for fabricating landing plug of semiconductor device  
A method of fabricating a landing plug of a semiconductor device includes performing a double patterning process to separately form a landing plug contact hole for a storage node and a landing plug...
7601649 Zirconium-doped tantalum oxide films  
A dielectric film containing zirconium-doped tantalum oxide arranged as a structure of one or more monolayers and a method of fabricating such a dielectric film produce a reliable dielectric layer...
7598177 Methods of filling trenches using high-density plasma deposition (HDP)  
Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit...
7592273 Semiconductor device with hydrogen barrier and method therefor  
A method of forming a semiconductor device comprises providing a portion of a semiconductor device structure, wherein the portion includes a region susceptible to hydrogen incorporation due to...
7592270 Modulation of stress in stress film through ion implantation and its application in stress memorization technique  
Some example embodiments of the invention provide a method to improve the performance of MOS devices by increasing the stress in the channel region. An example embodiment for a NMOS transistor is...
7592254 Methods for coating and filling high aspect ratio recessed features  
The present invention provides methods for conformally or superconformally coating and/or uniformly filling structures with a continuous, conformal layer or superconformal layer. Methods of the...
7592272 Manufacturing method of semiconductor integrated circuit  
An object of the present invention is to provide a method of depositing yttrium-stabilized hafnia use for a DRAM capacitor insulating film while controlling the composition at a high accuracy by an...
7588996 Oxide pattern forming method and patterning method of semiconductor device  
An oxide pattern forming method comprises forming an oxide layer on a semiconductor substrate, implanting boron ions of not less than 1.0×10 16 atoms/cm 2 onto the oxide layer in a given region,...
7582540 Method for manufacturing SOI wafer  
This method for manufacturing an SOI wafer includes: a step of forming insulating films in a front surface and a mirror-polished rear surface of an active layer wafer; a step of removing the...
7563729 Method of forming a dielectric film  
A method of forming a dielectric film on a substrate surface includes the steps of forming the dielectric film on the substrate surface in plural steps, and reforming, in each of the plural steps...
7541296 Method for forming insulating film, method for forming multilayer structure and method for manufacturing semiconductor device  
Disclosed is a method for effectively forming a Low-k insulating film. The method comprises the steps of: spin-coating on an underlying layer a precursor solution formed by dispersing Low-k...
7531466 Metal organic deposition precursor solution synthesis and terbium-doped SiO2 thin film deposition  
A method of making a doped silicon oxide thin film using a doped silicon oxide precursor solution includes mixing a silicon source in an organic acid and adding 2-methoxyethyl ether to the silicon...
7527991 Light emitting apparatus provided with fluorescent substance and semiconductor light emitting device, and method of manufacturing the same  
In a light emitting apparatus comprising a light emitting device, a fluorescent substance capable of absorbing at least a portion of light emitted by the light emitting device and emitting light...
7517815 Spin-on glass composition, method of preparing the spin-on glass composition and method of forming a porous silicon oxide layer using the spin-on glass composition  
A spin-on glass composition includes a solvent, about 3 to about 20 percent by weight of a porogen, and about 3 to about 20 percent by weight of a silsesquioxane oligomer represented by formula...
7517816 Technique for creating different mechanical stress in different channel regions by forming an etch stop layer having differently modified intrinsic stress  
By providing a contact etch stop layer, the stress in channel regions of different transistor types may be effectively controlled, wherein tensile and compressive stress portions of the contact...
7510942 Molecular modifications of metal/dielectric interfaces  
A method of increasing the work function of micro-electrodes includes providing a metal or silica surface functionalized with reactive groups and contacting the functionalized surface with a...
7511326 ALD of amorphous lanthanide doped TiOx films  
The use of atomic layer deposition (ALD) to form an amorphous dielectric layer of titanium oxide (TiO x ) doped with lanthanide elements, such as samarium, europium, gadolinium, holmium, erbium and...
7510983 Iridium/zirconium oxide structure  
Embodiments of an electronic apparatus and embodiments for methods of forming the electronic apparatus include a conductive layer having an iridium-based layer, where the conductive layer is...
7510982 Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles  
Porous dielectric layers are produced by embedding and removing nanoparticles in composite dielectric layers. The pores may be produced after the barrier material, the metal or other conductive...
7507653 Method of fabricating metal compound dots dielectric piece  
A method of fabricating a dielectric piece which includes metal compound dots is provided. A stacked layer formed over the substrate includes a metal compound layer and an energy barrier layer. A...
7501354 Formation of low K material utilizing process having readily cleaned by-products  
Nano-porous low dielectric constant films are deposited utilizing materials having reactive by-products readily removed from a processing chamber by plasma cleaning. In accordance with one...
7494939 Methods for forming a lanthanum-metal oxide dielectric layer  
Atomic layer deposited lanthanum-metal oxide dielectric layers and methods of fabricating such dielectric layers provide an insulating layer in a variety of structures for use in a wide range of...
7476609 Forming of a cavity in an insulating layer  
A method for forming, by dry etch, an opening of a given shape in a silica glass layer, the layer having a doping profile similar to the shape and the etch plasma being a non-carbonated fluorinated...
7470606 Masking methods  
The invention includes masking methods. In one implementation, a masking material which includes boron doped amorphous carbon is formed over a feature formed on a semiconductor substrate. The...
7432126 Substrate with semiconductor layer, electronic component, electronic circuit, printable composition and method for production thereof  
A substrate comprises at least one semiconductor layer applied to a substrate material, whereby the semiconductor layer comprises an inert matrix material, in which an inorganic semiconductor...
7429541 Method of forming trench isolation in the fabrication of integrated circuitry  
This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of...
RE40507 Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG  
A method of forming a pre-metal dielectric film having good as deposited gapfill characteristics, as well as good mobile-ion gettering capability. The method involves first depositing a layer of...
7419903 Thin films  
Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting...
7419919 Method of manufacturing semiconductor device  
A method for manufacturing a semiconductor device, in which a substrate is disposed in a chamber and a fluorine-containing silicon oxide film is formed on the substrate using a plasma CVD process....
7419920 Metal thin film and semiconductor comprising a metal thin film  
A metal oxide thin film may be obtained by providing a source gas and an oxidizer gas. The source gas may include a hydrolyzable metallic compound. The oxidizer gas may include a hydrate of a metal...
7410913 Method of manufacturing silicon rich oxide (SRO) and semiconductor device employing SRO  
Provided are methods for manufacturing silicon rich oxide (SRO) layers useful in the fabrication of semiconductor devices, for example, non-volatile memory devices, and methods for fabricating...
7402532 Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layer  
An interconnect structure in which the adhesion between an upper level low-k dielectric material, such as a material comprising elements of Si, C, O, and H, and an underlying diffusion capping...
7402533 Masking without photolithography during the formation of a semiconductor device  
A method for forming a semiconductor device comprises forming a dielectric layer over a semiconductor wafer substrate assembly having closely spaced regions, such as a memory transistor array, and...
7371698 Method of forming film pattern, active matrix substrate, electro-optic device, and electronic apparatus  
A method of forming a film pattern includes the steps of forming a bank for partitioning a pattern forming area including a first pattern forming area and a second pattern forming area having an...
7368401 Integrated circuit having a doped porous dielectric and method of manufacturing the same  
In one aspect of the invention, a method for forming an integrated circuit having an at least substantially doped porous dielectric includes forming a semiconductor device. The semiconductor device...
7361611 Doped nitride film, doped oxide film and other doped films  
Adding at least one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film...
7342290 Semiconductor metal contamination reduction for ultra-thin gate dielectrics  
A bilayer dielectric structure for substantially reducing or eliminating metal contaminants formed during subsequent polysilicon deposition is provided. The bilayer dielectric structure includes an...
7335610 Ultraviolet blocking layer  
Semiconductor structures and methods of fabricating semiconductor structures are disclosed. The method comprises the steps of: providing an initial semiconductor structure; forming a non-silicon...
7335598 Chemical-mechanical polishing method  
A chemical-mechanical polishing process for forming a metallic interconnect includes the steps of providing a semiconductor substrate having a first metallic line thereon, and then forming a...
7335609 Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials  
A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the...
7320944 Deposition of phosphosilicate glass film  
A method of forming a phosphosilicate glass, includes flowing a pre-deposition gas comprising an inert gas into a deposition chamber containing a substrate, where the temperature of the substrate...
7312165 Codeposition of hafnium-germanium oxides on substrates used in or for semiconductor devices  
Methods of film deposition using metals and metal oxides. A thin film of germanium oxide and an oxide of a non-germanium metal is deposited by ALD by alternating deposition of first and second...
7309650 Memory device having a nanocrystal charge storage region and method  
A memory device having a metal nanocrystal charge storage structure and a method for its manufacture. The memory device may be manufactured by forming a first oxide layer on the semiconductor...
7294556 Method of forming trench isolation in the fabrication of integrated circuitry  
This invention includes methods of forming a phosphorus doped silicon dioxide comprising layers, and methods of forming trench isolation in the fabrication of integrated circuitry. In one...
Matches 1 - 50 out of 329 1 2 3 4 5 6 7 >