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7629272 Ultraviolet assisted porogen removal and/or curing processes for forming porous low k dielectrics  
Processes for forming porous low k dielectric materials from low k dielectric films containing a porogen material include exposing the low k dielectric film to ultraviolet radiation. In one...
7622399 Method of forming low-k dielectrics using a rapid curing process  
A method of forming a low dielectric constant structure. The method comprises providing at a first temperature a dielectric material having a first dielectric constant and a first elastic modulus,...
7615473 Method of introducing ion and method of manufacturing semiconductor device  
When an ion is introduced into a semiconductor on which a resist is formed, the ion and the resist react with each other to generate a gas (dissociated gas) and a component of the thus-generated...
7611983 Semiconductor device and a manufacturing method of the same  
A first BPSG film covering a transistor is formed. Next, a second BPSG film is formed on the first BPSG film. The B concentration in the first BPSG film is about five times higher than the B...
7598173 Electro-optic displays, and components for use therein  
An electro-optic display comprises a substrate ( 100 ), non-linear devices ( 102 ) disposed substantially in one plane on the substrate ( 100 ), pixel electrodes ( 106 ) connected to the non-linear...
7598166 Dielectric layers for metal lines in semiconductor chips  
A semiconductor structure and methods for forming the same. The structure includes (a) a substrate; (b) a first device and a second device each being on the substrate; (c) a device cap dielectric...
7589026 Method for fabricating a fine pattern in a semiconductor device  
A method for fabricating a fine pattern in a semiconductor device includes forming a first polymer layer and a second polymer layer over an etch target layer. The second polymer layer is patterned...
7585785 Sacrificial benzocyclobutene copolymers for making air gap semiconductor devices  
A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor...
7582572 Method of manufacturing insulating film, method of manufacturing transistor, and method of manufacturing electronic device  
A method of manufacturing an insulating film includes coating a first liquid material in which polysilazane is dissolved on a substrate; decreasing dangling bonds of silicon (Si) in the first...
7576015 Methods for manufacturing alignment layer, active device array substrate and color filter substrate  
A method for manufacturing an alignment layer is provided, which includes the following steps. First, a substrate is provided. Next, an auxiliary layer is formed on the substrate. Then, an...
7576000 Molded dielectric layer in print-patterned electronic circuits  
A method forms a first active electronic layer, prints an array of pillars on the first active electronic layer, dispenses a curable polymer over the array of pillars, molds the curable polymer by...
7569499 Semiconductor device made by multiple anneal of stress inducing layer  
The invention provides a method of fabricating a semiconductor device. In one aspect, the method comprises forming a stress inducing layer over a semiconductor substrate, subjecting the stress...
7569497 Method and apparatus for forming insulating layer  
In a method for forming an insulating film, a film containing an organic curable material and provided on a substrate for an electronic device is irradiated with an energy plasma produced by a...
7569469 Dielectric nanostructure and method for its manufacture  
The present invention relates to dielectric nanostructures useful in semiconductor devices and other electronic devices and methods for manufacturing the dielectric nanostructures. The...
7557023 Implantation of gate regions in semiconductor device fabrication  
A semiconductor fabrication method. The method includes providing a semiconductor structure which includes (i) a semiconductor layer, (ii) a gate dielectric layer on the semiconductor layer, and...
7547645 Method for coating a structure comprising semiconductor chips  
A method for coating a structure that includes at least one semiconductor chip involves electrostatically depositing coating particles on the areas of the structure to be coated. The coating...
7544069 Method for fabricating thin film pattern and method for fabricating flat panel display device using the same  
A method for fabricating a thin film pattern and a method for fabricating a flat panel display device using the same to form an organic material pattern by not using a photo process are disclosed....
7534717 Method of manufacturing semiconductor device  
The formation of an interlayer insulating film above a substrate, the formation of an insulating film of an organic material on the interlayer insulating film thereafter, and the irradiation of the...
7531465 Method of manufacturing nitride-based semiconductor light emitting device  
Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having an improved structure in which optical extraction efficiency is improved. The method of...
7527991 Light emitting apparatus provided with fluorescent substance and semiconductor light emitting device, and method of manufacturing the same  
In a light emitting apparatus comprising a light emitting device, a fluorescent substance capable of absorbing at least a portion of light emitted by the light emitting device and emitting light...
7521378 Low temperature process for polysilazane oxidation/densification  
Semiconductor devices, structures and systems that utilize a polysilazane-based silicon oxide layer or fill, and methods of making the oxide layer are disclosed. In one embodiment, a polysilazane...
7517817 Method for forming a silicon oxide layer using spin-on glass  
A method is provided for forming silicon oxide layers during the processing of semiconductor devices by applying a SOG layer including polysilazane to a substrate and then substantially converting...
7517808 Method for forming and removing a patterned silicone film  
A method for reworking semiconductor materials includes: (i) applying a silicone composition to a surface of a substrate to form a film, (ii) exposing a portion of the film to radiation to produce...
7514709 Organo-silsesquioxane polymers for forming low-k dielectrics  
A low dielectric constant polymer, comprising monomeric units derived from a compound having the general formula I (R 1 —R 2 ) n —Si—(X 1 ) 4-n , wherein each X 1 is independently selected...
7514338 Method of manufacturing a semiconductor device  
A method of manufacturing a semiconductor device, includes preparing a work piece having a trench on its main surface side, forming a polymer film containing a polymer containing silicon, hydrogen...
7510959 Method of manufacturing a semiconductor device having damascene structures with air gaps  
A method of manufacturing a semiconductor device having damascene structures with air gaps is provided. In one embodiment, the method comprises the steps of depositing and patterning a disposable...
7501353 Method of formation of a damascene structure utilizing a protective film  
Disclosed is a method for the formation of features in a damascene process. According to the method, vias are formed in a dielectric layer and then covered by a layer of high molecular weight...
7494938 Advanced low dielectric constant organosilicon plasma chemical vapor deposition films  
A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter “SiCOH”) in a covalently bonded tri-dimensional network structure having a dielectric constant of...
7491658 Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality  
A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon...
7485585 Method of forming a thin film, method of manufacturing a gate structure using the same and method of manufacturing a capacitor using the same  
In a method of forming a thin film and methods of manufacturing a gate structure and a capacitor, a hafnium precursor including one alkoxy group and three amino groups, and an oxidizing agent are...
7482676 Compositions for preparing low dielectric materials  
Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as...
7482265 UV curing of low-k porous dielectrics  
A method of manufacturing a semiconductor device having a low-k dielectric layer is provided. An embodiment comprises forming a dielectric layer on a substrate, wherein the layer comprises a pore...
7482244 Method of preventing a peeling issue of a high stressed thin film  
A wafer including a high stressed thin film thereon is lifted, and a pre-heating process is performed while the wafer is lifted. Subsequently, a dielectric layer is deposited on the high stressed...
7479463 Method for heating a chemically amplified resist layer carried on a rotating substrate  
Embodiments of an apparatus and methods for heating a substrate and a sacrificial layer are generally described herein. Other embodiments may be described and claimed.
7479306 SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same  
A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in...
7473653 Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups  
Methods of preparing a low stress porous low-k dielectric material on a substrate are provided. The methods involve the use of a structure former precursor and/or porogen precursor with one or more...
7473579 Self-aligned wafer level integration system  
A polymer-based, self-aligned wafer-level heterogeneous integration system, SA WLIT, for integrating semiconductor integrated circuit (IC) chips to a substrate is presented. The system includes a...
7470634 Method for forming interlayer dielectric film for semiconductor device by using polyhedral molecular silsesquioxane  
Disclosed herein is a method for forming an interlayer dielectric film for a semiconductor device by using a polyhedral molecular silsesquioxane. According to the method, the polyhedral molecular...
7470554 Forming method of stacking structure and manufacturing method of electron source and image display apparatus using such method  
A method of forming a stacking structure by forming an electroconductive layer precursor pattern by an electroconductive paste made of a resin component, electroconductive fine particles, and glass...
7468330 Imprint process using polyhedral oligomeric silsesquioxane based imprint materials  
A method of forming a structure. The method including: forming a layer of a polymerizable composition including one or more polyhedral silsesquioxane oligomers each having one or more polymerizable...
7468287 Method of fabricating a heterojunction of organic semiconducting polymers  
Provided is a method of forming a heterojunction of contiguous layers of organic semiconducting polymers. The method comprises firstly forming a layer of a first organic semiconducting polymer on a...
7465977 Method for producing a packaged integrated circuit  
There is described a method for producing a packaged integrated circuit. The method comprises a first step of building an integrated circuit having a micro-structure suspended above a micro-cavity,...
7456045 Low temperature melt-processing of organic-inorganic hybrid  
The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a...
7452735 Carbon nanotube deposition with a stencil  
Composition of carbon nanotubes (CNTs) are produced into inks that are dispensable via printing or stencil printing processes. The CNT ink is dispensed into wells formed in a cathode structure...
7446058 Adhesion enhancement for metal/dielectric interface  
An interconnect structure and method of fabricating the same in which the adhesion between a chemically etched dielectric material and a noble metal liner is improved are provided. In accordance...
7446057 Fabrication method  
A method for forming a multilevel structure on a surface by depositing a curable liquid layer on the surface; pressing a stamp having a multilevel pattern therein into the liquid layer to produce...
7445953 Low temperature curable materials for optical applications  
The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices. A substantially crack-free and substantially...
7442633 Decoupling capacitor for high frequency noise immunity  
Systems and methods are provided for an on-chip decoupling device and method. One aspect of the present subject matter is a capacitor. One embodiment of the capacitor includes a substrate, a high K...
7439111 Semiconductor device and manufacturing method thereof  
An object of the invention is to form an insulating film having favorable insulation and planarity. An insulating film is formed by performing heat treatment a resin containing a siloxane polymer...
7432218 Method for producing porous body  
A process of a porous body comprises the steps of disposing a first material in which pores are formed by anodization on a substrate to form a first layer, disposing on the first layer a second...
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