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7622403 |
Semiconductor processing system with ultra low-K dielectric
A semiconductor processing system with ultra low-K dielectric is provided including providing a substrate having an electronic circuit, forming an ultra low-K dielectric layer, having porogens,...
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7622397 |
InN/TiO2 photosensitized electrode
The present invention is a photosensitized electrode which absorbs sun light to obtain pairs of separated electron and hole. The photosensitized electrode is fabricated with simple procedure and...
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7622394 |
Method of fabricating semiconductor device including forming a protective layer and removing after etching a trench
The method of fabricating a semiconductor device includes subjecting a semiconductor substrate to trench etching by alternately repeating an etching step and a deposition step. The etching step...
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7618903 |
Soft mold, method of manufacturing the same, and patterning method using the same
The patterning method includes forming a synthetic resin layer on a substrate, providing a mold in which a predetermined pattern is formed and metal particles are distributed on the surface of the...
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7615501 |
Method for making a thin film layer
A method of making a patterned layer comprises directing a beam of vaporized material toward a reflector such that the beam of vaporized material impinges an impingement surface of the reflector...
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7615431 |
Manufacturing method of semiconductor device
Before applying a resist on a first gate insulating film, a thinner is provided on an entire surface including a surface of the first gate insulating film to wash the surface of the first gate...
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7605092 |
Passive elements, articles, packages, semiconductor composites, and methods of manufacturing same
Systems and methods associated with semiconductor articles are disclosed, including forming a first layer of material on a substrate, etching trenches within regions defining a passive element in...
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7605086 |
Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof
A corrosion resistant component of a plasma chamber includes a liquid crystalline polymer. In a preferred embodiment, the liquid crystalline polymer (LCP) is provided on an aluminum component...
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7605050 |
Method of bonding a polymer surface to a conducting or semiconducting surface and application of the same
The invention relates to a method of bonding a polymer surface to an electrically conductive or semiconductive surface, which method is characterized in that it comprises:
a) the...
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7592272 |
Manufacturing method of semiconductor integrated circuit
An object of the present invention is to provide a method of depositing yttrium-stabilized hafnia use for a DRAM capacitor insulating film while controlling the composition at a high accuracy by an...
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7592271 |
Method of fabricating a flash memory device
A method of fabricating a flash memory device, in which a pre-metal dielectric layer, a hard mask layer, and a first etch mask pattern are sequentially formed over a semiconductor substrate; an...
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7591863 |
Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip
The invention provides a laminating system in which one of second and third substrates for sealing a thin film integrated circuit is supplied to a first substrate having the plurality of thin film...
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7589015 |
Fabrication of semiconductor devices using anti-reflective coatings
Techniques are disclosed for fabricating a device using a photolithographic process. The method includes providing a first anti-reflective coating over a surface of a substrate. A layer which is...
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7585785 |
Sacrificial benzocyclobutene copolymers for making air gap semiconductor devices
A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor...
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7582555 |
CVD flowable gap fill
The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a...
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7582507 |
Catalyst support substrate, method for growing carbon nanotubes using the same, and the transistor using carbon nanotubes
A catalyst supporting substrate includes a first region ( 54 ) which is formed on a substrate ( 50 ); and a second region ( 55 ) which is formed covering a part of the first region. The first...
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7582495 |
Inkjet head, method for producing inkjet head, inkjet recorder and inkjet coater
A method for producing an inkjet head for jetting an ink from a nozzle that is formed on a nozzle main body formed of a metal material, the method includes smoothening a surface of the nozzle main...
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7580279 |
Flash memory cells with reduced distances between cell elements
An anti-reflective coating (ARC) is formed over the various layers involved in a cell fabrication process. The ARC is selectively etched such that the edges of the etched areas of the ARC slope...
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7579228 |
Disposable organic spacers
A method for making a semiconductor device is provided, comprising (a) providing a semiconductor structure comprising a first gate electrode ( 210 ); (b) forming a first set of organic spacers (...
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7576015 |
Methods for manufacturing alignment layer, active device array substrate and color filter substrate
A method for manufacturing an alignment layer is provided, which includes the following steps. First, a substrate is provided. Next, an auxiliary layer is formed on the substrate. Then, an...
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7576000 |
Molded dielectric layer in print-patterned electronic circuits
A method forms a first active electronic layer, prints an array of pillars on the first active electronic layer, dispenses a curable polymer over the array of pillars, molds the curable polymer by...
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7573063 |
Organic thin film transistors
A thin film transistor having an improved gate dielectric layer is disclosed. The gate dielectric layer comprises a poly(4-vinylphenol-co-acrylonitrile) based polymer. The resulting gate dielectric...
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7572667 |
Method of forming an organic semiconductor pattern and method of manufacturing an organic thin film transistor using the same
A method of forming an organic semiconductor pattern is provided. A pattern is formed on a first substrate. An adhesive is coated on the pattern to form an adhesive pattern. An organic...
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7571424 |
Diffused aerial image model semiconductor device fabrication
A lithography method has a simulation method for mathematically approximating a photoresist film pattern with a Diffused Aerial Image Model (“DAIM”) for semiconductor device fabrication. The...
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7570411 |
Optical limiter having trimetallic nitride endohedral metallofullerence films
An exemplary optical limiter device ( 100 ) has an optically transmissive substrate ( 102 ) and a layer ( 104 ) on a first surface ( 106 ) of the substrate, the layer having a trimetallic nitride...
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7569498 |
Manufacturing method of semiconductor device
A manufacturing method of a semiconductor device, includes forming a porous organo-siloxane film containing a porogen component having carbon as a main component above a semiconductor substrate,...
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7569497 |
Method and apparatus for forming insulating layer
In a method for forming an insulating film, a film containing an organic curable material and provided on a substrate for an electronic device is irradiated with an energy plasma produced by a...
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7569403 |
Pattern evaluation method, manufacturing method of semiconductor device, correction method of mask pattern and manufacturing method of exposure mask
A pattern evaluation method using a circuit arrangement provided with N (N is a natural number of 2 or greater) circuit groups having wiring whose widths are different to each other, each circuit...
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7566598 |
Method of mask reduction for producing a LTPS-TFT array by use of photo-sensitive low-K dielectrics
The present invention discloses a method of mask reduction for producing a low-temperature polysilicon thin film transistor array by use of a photo-sensitive low-K dielectric, which comprises the...
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7557049 |
Producing method of wired circuit board
A producing method of a wired circuit board includes the step of preparing a wired circuit board including an insulating layer and a conductive pattern having a wire covered with the insulating...
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7553776 |
Patterned functionalized silicon surfaces
The present invention provides a method for preparing a silicon substrate and a silicon substrate having a silicon surface comprising a pattern of covalently bound monolayers. Each of the...
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7553769 |
Method for treating a dielectric film
A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to a C x H y containing material, wherein x and y are each integers greater than or...
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7547645 |
Method for coating a structure comprising semiconductor chips
A method for coating a structure that includes at least one semiconductor chip involves electrostatically depositing coating particles on the areas of the structure to be coated. The coating...
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7547561 |
Advanced process control model incorporating a target offset term
An advanced process control (APC) architecture comprising a process model that incorporates a target offset term is provided. The APC architecture may be applied to a so-called develop inspect...
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7544966 |
Three-terminal electrical bistable devices
A three terminal electrical bistable device that includes a tri-layer composed of an electrically conductive mixed layer sandwiched between two layers of low conductivity organic material that is...
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7541234 |
Methods of fabricating integrated circuit transistors by simultaneously removing a photoresist layer and a carbon-containing layer on different active areas
Integrated circuit transistors may be fabricated by simultaneously removing a photoresist layer on a first active area of an integrated circuit substrate and a carbon-containing layer on a second...
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7528077 |
Semiconductor device and method for manufacturing the same
The present invention provides a semiconductor device having a coating film of a predetermined thickness provided along the circumference of a semiconductor light emitting element, and provide a...
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7521377 |
SiCOH film preparation using precursors with built-in porogen functionality
A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor...
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7521354 |
Low k interlevel dielectric layer fabrication methods
A low k interlevel dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. An oxide comprising interlevel dielectric layer...
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7514339 |
Method for fabricating shallow trench isolation structures using diblock copolymer patterning
A method of isolating semiconductor devices formed on a semiconductor substrate having a silicon on insulator (SOI) layer is provided. The method includes forming at least one shallow trench area...
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7507677 |
Removable amorphous carbon CMP stop
A method is provided for processing a substrate including removing amorphous carbon material disposed on a low k dielectric material with minimal or reduced defect formation and minimal dielectric...
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7507675 |
Device manufacturing method and device
A method for patterning a polished silicon surface is disclosed, the method including steps leading to an organic monolayer on at least a part of the silicon surface, the monolayer being...
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7504709 |
Electronic device, method of manufacturing an electronic device, and electronic apparatus
An electronic device including: a pair of electrodes; an organic semiconductor layer; and an organic film formed of organic compounds including nonconjugated organic compounds coupled to at least...
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7504344 |
Method of forming a carbon polymer film using plasma CVD
A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a...
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7504343 |
Semiconductor device and method for manufacturing the same
An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film...
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7501353 |
Method of formation of a damascene structure utilizing a protective film
Disclosed is a method for the formation of features in a damascene process. According to the method, vias are formed in a dielectric layer and then covered by a layer of high molecular weight...
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7501350 |
Plasma processing method
Disclosed is a plasma processing method for processing a target object by using a plasma of a process gas containing a fluorocarbon compound. Used is a fluorocarbon compound having at least one...
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7498662 |
Dielectric media including surface-treated metal oxide particles
Briefly, the present invention provides an electronic device, typically a transistor or a capacitor, comprising at least one electrically conductive electrode and, adjacent to the electrode, a...
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7494938 |
Advanced low dielectric constant organosilicon plasma chemical vapor deposition films
A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter “SiCOH”) in a covalently bonded tri-dimensional network structure having a dielectric constant of...
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7488505 |
Coating film forming method and system
When a coating film is formed on a substrate, the inplane uniformity of the thickness of the coating film is enhanced to improve through put. Above the substrate, there are provided main and...
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