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7622403 Semiconductor processing system with ultra low-K dielectric  
A semiconductor processing system with ultra low-K dielectric is provided including providing a substrate having an electronic circuit, forming an ultra low-K dielectric layer, having porogens,...
7622397 InN/TiO2 photosensitized electrode  
The present invention is a photosensitized electrode which absorbs sun light to obtain pairs of separated electron and hole. The photosensitized electrode is fabricated with simple procedure and...
7622394 Method of fabricating semiconductor device including forming a protective layer and removing after etching a trench  
The method of fabricating a semiconductor device includes subjecting a semiconductor substrate to trench etching by alternately repeating an etching step and a deposition step. The etching step...
7618903 Soft mold, method of manufacturing the same, and patterning method using the same  
The patterning method includes forming a synthetic resin layer on a substrate, providing a mold in which a predetermined pattern is formed and metal particles are distributed on the surface of the...
7615501 Method for making a thin film layer  
A method of making a patterned layer comprises directing a beam of vaporized material toward a reflector such that the beam of vaporized material impinges an impingement surface of the reflector...
7615431 Manufacturing method of semiconductor device  
Before applying a resist on a first gate insulating film, a thinner is provided on an entire surface including a surface of the first gate insulating film to wash the surface of the first gate...
7605092 Passive elements, articles, packages, semiconductor composites, and methods of manufacturing same  
Systems and methods associated with semiconductor articles are disclosed, including forming a first layer of material on a substrate, etching trenches within regions defining a passive element in...
7605086 Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof  
A corrosion resistant component of a plasma chamber includes a liquid crystalline polymer. In a preferred embodiment, the liquid crystalline polymer (LCP) is provided on an aluminum component...
7605050 Method of bonding a polymer surface to a conducting or semiconducting surface and application of the same  
The invention relates to a method of bonding a polymer surface to an electrically conductive or semiconductive surface, which method is characterized in that it comprises: a) the...
7592272 Manufacturing method of semiconductor integrated circuit  
An object of the present invention is to provide a method of depositing yttrium-stabilized hafnia use for a DRAM capacitor insulating film while controlling the composition at a high accuracy by an...
7592271 Method of fabricating a flash memory device  
A method of fabricating a flash memory device, in which a pre-metal dielectric layer, a hard mask layer, and a first etch mask pattern are sequentially formed over a semiconductor substrate; an...
7591863 Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip  
The invention provides a laminating system in which one of second and third substrates for sealing a thin film integrated circuit is supplied to a first substrate having the plurality of thin film...
7589015 Fabrication of semiconductor devices using anti-reflective coatings  
Techniques are disclosed for fabricating a device using a photolithographic process. The method includes providing a first anti-reflective coating over a surface of a substrate. A layer which is...
7585785 Sacrificial benzocyclobutene copolymers for making air gap semiconductor devices  
A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor...
7582555 CVD flowable gap fill  
The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a...
7582507 Catalyst support substrate, method for growing carbon nanotubes using the same, and the transistor using carbon nanotubes  
A catalyst supporting substrate includes a first region ( 54 ) which is formed on a substrate ( 50 ); and a second region ( 55 ) which is formed covering a part of the first region. The first...
7582495 Inkjet head, method for producing inkjet head, inkjet recorder and inkjet coater  
A method for producing an inkjet head for jetting an ink from a nozzle that is formed on a nozzle main body formed of a metal material, the method includes smoothening a surface of the nozzle main...
7580279 Flash memory cells with reduced distances between cell elements  
An anti-reflective coating (ARC) is formed over the various layers involved in a cell fabrication process. The ARC is selectively etched such that the edges of the etched areas of the ARC slope...
7579228 Disposable organic spacers  
A method for making a semiconductor device is provided, comprising (a) providing a semiconductor structure comprising a first gate electrode ( 210 ); (b) forming a first set of organic spacers (...
7576015 Methods for manufacturing alignment layer, active device array substrate and color filter substrate  
A method for manufacturing an alignment layer is provided, which includes the following steps. First, a substrate is provided. Next, an auxiliary layer is formed on the substrate. Then, an...
7576000 Molded dielectric layer in print-patterned electronic circuits  
A method forms a first active electronic layer, prints an array of pillars on the first active electronic layer, dispenses a curable polymer over the array of pillars, molds the curable polymer by...
7573063 Organic thin film transistors  
A thin film transistor having an improved gate dielectric layer is disclosed. The gate dielectric layer comprises a poly(4-vinylphenol-co-acrylonitrile) based polymer. The resulting gate dielectric...
7572667 Method of forming an organic semiconductor pattern and method of manufacturing an organic thin film transistor using the same  
A method of forming an organic semiconductor pattern is provided. A pattern is formed on a first substrate. An adhesive is coated on the pattern to form an adhesive pattern. An organic...
7571424 Diffused aerial image model semiconductor device fabrication  
A lithography method has a simulation method for mathematically approximating a photoresist film pattern with a Diffused Aerial Image Model (“DAIM”) for semiconductor device fabrication. The...
7570411 Optical limiter having trimetallic nitride endohedral metallofullerence films  
An exemplary optical limiter device ( 100 ) has an optically transmissive substrate ( 102 ) and a layer ( 104 ) on a first surface ( 106 ) of the substrate, the layer having a trimetallic nitride...
7569498 Manufacturing method of semiconductor device  
A manufacturing method of a semiconductor device, includes forming a porous organo-siloxane film containing a porogen component having carbon as a main component above a semiconductor substrate,...
7569497 Method and apparatus for forming insulating layer  
In a method for forming an insulating film, a film containing an organic curable material and provided on a substrate for an electronic device is irradiated with an energy plasma produced by a...
7569403 Pattern evaluation method, manufacturing method of semiconductor device, correction method of mask pattern and manufacturing method of exposure mask  
A pattern evaluation method using a circuit arrangement provided with N (N is a natural number of 2 or greater) circuit groups having wiring whose widths are different to each other, each circuit...
7566598 Method of mask reduction for producing a LTPS-TFT array by use of photo-sensitive low-K dielectrics  
The present invention discloses a method of mask reduction for producing a low-temperature polysilicon thin film transistor array by use of a photo-sensitive low-K dielectric, which comprises the...
7557049 Producing method of wired circuit board  
A producing method of a wired circuit board includes the step of preparing a wired circuit board including an insulating layer and a conductive pattern having a wire covered with the insulating...
7553776 Patterned functionalized silicon surfaces  
The present invention provides a method for preparing a silicon substrate and a silicon substrate having a silicon surface comprising a pattern of covalently bound monolayers. Each of the...
7553769 Method for treating a dielectric film  
A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to a C x H y containing material, wherein x and y are each integers greater than or...
7547645 Method for coating a structure comprising semiconductor chips  
A method for coating a structure that includes at least one semiconductor chip involves electrostatically depositing coating particles on the areas of the structure to be coated. The coating...
7547561 Advanced process control model incorporating a target offset term  
An advanced process control (APC) architecture comprising a process model that incorporates a target offset term is provided. The APC architecture may be applied to a so-called develop inspect...
7544966 Three-terminal electrical bistable devices  
A three terminal electrical bistable device that includes a tri-layer composed of an electrically conductive mixed layer sandwiched between two layers of low conductivity organic material that is...
7541234 Methods of fabricating integrated circuit transistors by simultaneously removing a photoresist layer and a carbon-containing layer on different active areas  
Integrated circuit transistors may be fabricated by simultaneously removing a photoresist layer on a first active area of an integrated circuit substrate and a carbon-containing layer on a second...
7528077 Semiconductor device and method for manufacturing the same  
The present invention provides a semiconductor device having a coating film of a predetermined thickness provided along the circumference of a semiconductor light emitting element, and provide a...
7521377 SiCOH film preparation using precursors with built-in porogen functionality  
A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor...
7521354 Low k interlevel dielectric layer fabrication methods  
A low k interlevel dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. An oxide comprising interlevel dielectric layer...
7514339 Method for fabricating shallow trench isolation structures using diblock copolymer patterning  
A method of isolating semiconductor devices formed on a semiconductor substrate having a silicon on insulator (SOI) layer is provided. The method includes forming at least one shallow trench area...
7507677 Removable amorphous carbon CMP stop  
A method is provided for processing a substrate including removing amorphous carbon material disposed on a low k dielectric material with minimal or reduced defect formation and minimal dielectric...
7507675 Device manufacturing method and device  
A method for patterning a polished silicon surface is disclosed, the method including steps leading to an organic monolayer on at least a part of the silicon surface, the monolayer being...
7504709 Electronic device, method of manufacturing an electronic device, and electronic apparatus  
An electronic device including: a pair of electrodes; an organic semiconductor layer; and an organic film formed of organic compounds including nonconjugated organic compounds coupled to at least...
7504344 Method of forming a carbon polymer film using plasma CVD  
A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a...
7504343 Semiconductor device and method for manufacturing the same  
An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film...
7501353 Method of formation of a damascene structure utilizing a protective film  
Disclosed is a method for the formation of features in a damascene process. According to the method, vias are formed in a dielectric layer and then covered by a layer of high molecular weight...
7501350 Plasma processing method  
Disclosed is a plasma processing method for processing a target object by using a plasma of a process gas containing a fluorocarbon compound. Used is a fluorocarbon compound having at least one...
7498662 Dielectric media including surface-treated metal oxide particles  
Briefly, the present invention provides an electronic device, typically a transistor or a capacitor, comprising at least one electrically conductive electrode and, adjacent to the electrode, a...
7494938 Advanced low dielectric constant organosilicon plasma chemical vapor deposition films  
A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter “SiCOH”) in a covalently bonded tri-dimensional network structure having a dielectric constant of...
7488505 Coating film forming method and system  
When a coating film is formed on a substrate, the inplane uniformity of the thickness of the coating film is enhanced to improve through put. Above the substrate, there are provided main and...