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7429541 Method of forming trench isolation in the fabrication of integrated circuitry  
This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of...
7429338 Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization  
A composition and an associated method for chemical mechanical planarization (or other polishing) are described. The composition includes a surface-modified abrasive modified with at least one...
7427570 Porous organosilicate layers, and vapor deposition systems and methods for preparing same  
The present invention provides porous organosilicate layers, and vapor deposition systems and methods for preparing such layers on substrates. The porous organosilicate layers are useful, for...
7427544 Semiconductor device and method of manufacturing the same  
A semiconductor device includes an element isolation insulating film provided in a semiconductor substrate between first and second element regions, a gate electrode running over the element...
RE40507 Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG  
A method of forming a pre-metal dielectric film having good as deposited gapfill characteristics, as well as good mobile-ion gettering capability. The method involves first depositing a layer of...
7425346 Method for making hybrid dielectric film  
A method of forming a hybrid inorganic/organic dielectric layer on a substrate for use in an integrated circuit is provided, wherein the method includes forming a first dielectric layer on the...
7420202 Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device  
An electronic device can include a transistor structure of a first conductivity type, a field isolation region, and a layer of a first stress type overlying the field isolation region. For example,...
7419920 Metal thin film and semiconductor comprising a metal thin film  
A metal oxide thin film may be obtained by providing a source gas and an oxidizer gas. The source gas may include a hydrolyzable metallic compound. The oxidizer gas may include a hydrate of a metal...
7419919 Method of manufacturing semiconductor device  
A method for manufacturing a semiconductor device, in which a substrate is disposed in a chamber and a fluorine-containing silicon oxide film is formed on the substrate using a plasma CVD process....
7419888 Method of forming a silicon-rich nanocrystalline structure by an atomic layer deposition process and method of manufacturing a non-volatile semiconductor device using the same  
In a method of forming a silicon-rich nanocrystalline structure by an ALD process, a first gas including a first silicon compound is provided onto an object to form a silicon-rich chemisorption...
7419849 Method for producing single electron semiconductor element  
The present invention provides a method for production of a single electron semiconductor element (SET) in which a quantum dot is selectively arranged in a nano gap between fine electrodes, whereby...
7419613 Method and device for plasma-etching organic material film  
A support electrode ( 2 ) and a counter electrode ( 16 ) constituting parallel plate electrodes are disposed in a process vessel ( 1 ). A substrate (W) with an organic material film formed thereon...
7416993 Patterned nanowire articles on a substrate and methods of making the same  
Nanowire articles and methods of making the same are disclosed. A conductive article includes a plurality of inter-contacting nanowire segments that define a plurality of conductive pathways along...
7411275 Semiconductor device comprising an inorganic insulating film and method of manufacturing the same  
It is an object to provide an insulating film having a very low dielectric constant and a great mechanical strength. Moreover, it is another object to provide a semiconductor device capable of...
7410913 Method of manufacturing silicon rich oxide (SRO) and semiconductor device employing SRO  
Provided are methods for manufacturing silicon rich oxide (SRO) layers useful in the fabrication of semiconductor devices, for example, non-volatile memory devices, and methods for fabricating...
7407893 Liquid precursors for the CVD deposition of amorphous carbon films  
Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing...
7402535 Method of incorporating stress into a transistor channel by use of a backside layer  
The present invention provides the method includes forming source/drain regions 170 in a semiconductor wafer substrate 110 adjacent a gate structure 130 located on a front side of the...
7402534 Pretreatment processes within a batch ALD reactor  
Embodiments of the invention provide methods for forming a material on a substrate which includes exposing a plurality of substrates within a batch process chamber to a first oxidizing gas during a...
7402445 Method of forming micro-structures and nano-structures  
Methods of forming a nano-structure for electron extraction are disclosed. One method of forming a nano-structure comprises irradiating an area on a first surface of a thermal conductive film to...
7396777 Method of fabricating high-k dielectric layer having reduced impurity  
Methods of fabricating high-k dielectric layers having reduced impurities for use in semiconductor applications are disclosed. The methods include the steps of: forming a stacked dielectric layer...
7396774 Methods for forming an enriched metal oxide surface  
Methods of forming a metal oxide surface that is enriched with metal oxide in its higher oxidation state are provided. A metal oxide surface that is enriched with metal oxide in its higher...
7393935 Method of selective arrangement of ferritin  
A method for selectively arranging ferritin in a specified inorganic material part formed on a substrate is provided. The method for arranging ferritin of the present invention is characterized in...
7393796 Composite dielectric forming methods and composite dielectrics  
A composite dielectric forming method includes atomic layer depositing alternate layers of hafnium oxide and lanthanum oxide over a substrate. The hafnium oxide can be thermally stable, crystalline...
7393795 Methods for post-etch deposition of a dielectric film  
Methods for post-etch deposition on a dielectric film are provided in the present invention. In one embodiment, the method includes providing a substrate having a low-k dielectric layer disposed...
7393736 Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics  
The use of atomic layer deposition (ALD) to form a nanolaminate dielectric of zirconium oxide (ZrO 2 ), hafnium oxide (HfO 2 ) and tin oxide (SnO 2 ) acting as a single dielectric layer with a...
7393731 Semiconductor device and method of manufacturing the same  
A silicon nitride film is formed between interlayer insulating films covering an upper surface of an element formed on a surface of a semiconductor layer. With this structure, a semiconductor...
7390746 Multiple deposition for integration of spacers in pitch multiplication process  
Pitch multiplication is performed using a two step process to deposit spacer material on mandrels. The precursors of the first step react minimally with the mandrels, forming a barrier layer...
7390743 Methods for forming a structured tungsten layer and forming a semiconductor device using the same  
A method for forming a structured tungsten layer and a method for forming a semiconductor device using the same. A first tungsten layer is formed with an atomic layer deposition (ALD) method. A...
7390434 Method and apparatus for producing film from polymer solution, and optical polymer film  
A dope containing cellulose acylate as a main content of polymer is cast on a front surface of a moving belt in a method of producing a film from a solution. A drying apparatus is confronted to a...
7387973 Method for improving low-K dielectrics by supercritical fluid treatments  
A method for treating an inter-metal dielectric (IMD) layer to improve a mechanical strength and/or repair plasma etching damage including providing a low-K silicon oxide containing dielectric...
7387923 ISFET using PbTiO3 as sensing film  
A PbTiO 3 /SiO 2 -gated ISFET device comprising a PbTiO 3 thin film as H + -sensing film, and a method of forming the same. The PbTiO 3 thin film is formed through a sol-gel process which offers...
7384872 Method of producing substrate having patterned organosilane layer and method of using the substrate having the patterned organosilane layer  
Provided are a method of producing a substrate having a patterned organosilane layer and a method of using the substrate having the patterned organosilane layer. The method of producing the...
7381659 Method for reducing film stress for SiCOH low-k dielectric materials  
A method for reducing the tensile stress of a low-k dielectric layer includes depositing an organosilicate layer on a substrate, the layer having an initial tensile stress value associated...
7381620 Oxygen elimination for device processing  
A method includes forming at least a portion of a semiconductor device in a processing chamber containing oxygen and removing substantially all of the oxygen from the processing chamber. The method...
7378357 Multiple dielectric FinFET structure and method  
Disclosed is a method and structure for a fin-type field effect transistor (FinFET) structure that has different thickness gate dielectrics covering the fins extending from the substrate. These...
7378356 Biased pulse DC reactive sputtering of oxide films  
A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the...
7374635 Forming method and forming system for insulation film  
A gate insulation film ( 104 ) of a MISFET ( 100 ) is constituted of a silicon oxide film ( 106 ), silicon nitride film ( 107 ), and high-permittivity film ( 108 ). The silicon oxide film ( 106 )...
7368402 Systems and methods for forming tantalum oxide layers and tantalum precursor compounds  
A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum...
7368370 Site-specific nanoparticle self-assembly  
Disclosed herein are methods of self-assembling nanoparticles on specific sites of a substrate. The method generally includes introducing a p-type dopant species to at least a portion of an n-type...
7368365 Memory array buried digit line  
A method of forming a buried digit line is disclosed. Sacrificial spacers are formed along the sidewalls of an isolation trench, which is then filled with a sacrificial material. One spacer is...
7365027 ALD of amorphous lanthanide doped TiOx films  
The use of atomic layer deposition (ALD) to form an amorphous dielectric layer of titanium oxide (TiO x ) doped with lanthanide elements, such as samarium, europium, gadolinium, holmium, erbium and...
7365023 Porous underlayer coating and underlayer coating forming composition for forming porous underlayer coating  
There is provided an underlayer coating causing no intermixing with photoresist layer and having a high dry etching rate compared with photoresist, which is used in lithography process of...
7365003 Carbon nanotube interconnects in porous diamond interlayer dielectrics  
A method and structure for using porous diamond interlayer dielectrics (ILDs) in conjunction with carbon nanotube interconnects is herein described. A diamond ILD is deposited on an underlaying...
7361614 Method of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry  
This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of...
7361611 Doped nitride film, doped oxide film and other doped films  
Adding at least one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film...
7358187 Coating process for patterned substrate surfaces  
The present invention provides a coating process for patterned substrate surfaces, in which a substrate ( 101 ) is provided, the substrate having a surface ( 105 ) which is patterned in a substrate...
7358185 Device having contact pad with a conductive layer and a conductive passivation layer  
A method and apparatus is disclosed for sequential processing of integrated circuits, particularly for conductively passivating a contact pad with a material which resists formation of resistive...
7358170 Methods of forming conductive interconnects, and methods of depositing nickel  
The invention includes methods of electroless plating of nickel selectively on exposed conductive surfaces relative to exposed insulative surfaces. The electroless plating can utilize a bath which...
7354872 Hi-K dielectric layer deposition methods  
Methods of forming a high dielectric constant dielectric layer are disclosed including providing a process chamber including a holder for supporting a substrate, introducing a first gas comprising...
7351670 Method for producing silicon nitride films and process for fabricating semiconductor devices using said method  
Silicon nitride film is formed on a silicon wafer mounted in a boat in an LPCVD tool by feeding a silicon source (SiH 2 Cl 2 , SiCl 4 , Si 2 Cl 6 , etc.) from an injector and feeding a mixed gas of...
Matches 1 - 50 out of 1131 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >