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7622398 |
Semiconductor device, semiconductor layer and production method thereof
A semiconductor device is prepared by the use of a vapor phase method and is provided with a semiconductor layer composed of boron phosphide (BP) having a band gap at room temperature of not less...
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7618902 |
Plasma treatment of a semiconductor surface for enhanced nucleation of a metal-containing layer
A method for forming a dielectric layer is provided. The method may include providing a semiconductor surface and etching a thin layer of the semiconductor substrate to expose a surface of the...
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7618900 |
Semiconductor device and method of fabricating semiconductor device
A semiconductor device may be fabricated according to a method that reduces stain difference of a passivation layer in the semiconductor device. The method may include forming top wiring patterns...
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7615491 |
Defectivity and process control of electroless deposition in microelectronics applications
Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and...
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7615490 |
Method for fabricating landing plug of semiconductor device
A method of fabricating a landing plug of a semiconductor device includes performing a double patterning process to separately form a landing plug contact hole for a storage node and a landing plug...
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7615386 |
Thick oxide film for wafer backside prior to metalization loop
A method for reducing wafer backside large particle contamination, comprising: performing front end of line processing of a memory device, depositing a thick oxide on the wafer backside so that at...
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7611988 |
Defectivity and process control of electroless deposition in microelectronics applications
Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and...
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7611987 |
Defectivity and process control of electroless deposition in microelectronics applications
Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and...
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7611615 |
Process for manufacturing a metal electrode
The present invention provides a process for manufacturing a porous metal electrode, wherein the porosity degree is in the range of 30 to 50% and the metal is capable of forming a stable, uniform,...
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7605095 |
Heat processing method and apparatus for semiconductor process
A heat processing method for a semiconductor process includes placing a plurality of target substrates stacked at intervals in a vertical direction within a process field of a process container....
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7601649 |
Zirconium-doped tantalum oxide films
A dielectric film containing zirconium-doped tantalum oxide arranged as a structure of one or more monolayers and a method of fabricating such a dielectric film produce a reliable dielectric layer...
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7601608 |
Memory array buried digit line
A method of forming a buried digit line is disclosed. Sacrificial spacers are formed along the sidewalls of an isolation trench, which is then filled with a sacrificial material. One spacer is...
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7601567 |
Method of preparing organic thin film transistor, organic thin film transistor, and organic light-emitting display device including the organic thin film transistor
A method of forming an organic thin film transistor is disclosed. The method includes forming source and drain electrodes on a substrate; forming an insulating layer covering the source and drain...
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7598183 |
Bi-layer capping of low-K dielectric films
A method is provided for processing a substrate surface by delivering a first gas mixture comprising a first organosilicon compound, a first oxidizing gas, and one or more hydrocarbon compounds...
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7595270 |
Passivated stoichiometric metal nitride films
Methods for forming passivated stoichiometric metal nitride films are provided along with structures incorporating such films. The preferred methods include contacting a substrate with alternating...
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7592270 |
Modulation of stress in stress film through ion implantation and its application in stress memorization technique
Some example embodiments of the invention provide a method to improve the performance of MOS devices by increasing the stress in the channel region. An example embodiment for a NMOS transistor is...
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7592268 |
Method for fabricating semiconductor device
A method for fabricating a semiconductor device is provided. The method includes: forming a plurality of gate lines on a substrate by performing an etching process; forming an oxide layer on the...
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7592267 |
Method for manufacturing semiconductor silicon substrate and apparatus for manufacturing the same
This invention provides a method for manufacturing a semiconductor silicon substrate by use of carbon dioxide in a supercritical state, which method is capable of making the semiconductor silicon...
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7589028 |
Hydroxyl bond removal and film densification method for oxide films using microwave post treatment
Methods of forming dielectric films with increased density and improved film properties are provided. The methods involve exposing dielectric films to microwave radiation. According to various...
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7588988 |
Method of forming apparatus having oxide films formed using atomic layer deposition
A dielectric layer containing an atomic layer deposited insulating metal oxide film having multiple metal components and a method of fabricating such a dielectric layer produce a reliable...
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7582969 |
Hermetic interconnect structure and method of manufacture
A hermetic interconnect is fabricated on a substrate by forming a stud of conductive material over a metallization layer, and then overcoating the stud of conductive material and the metallization...
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7582561 |
Method of selectively depositing materials on a substrate using a supercritical fluid
A method for depositing one or more materials on a substrate, such as for example, a semiconductor substrate that includes providing the substrate; applying a polymer film to at least a portion of...
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7582540 |
Method for manufacturing SOI wafer
This method for manufacturing an SOI wafer includes: a step of forming insulating films in a front surface and a mirror-polished rear surface of an active layer wafer; a step of removing the...
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7579051 |
Method for manufacturing an electron emitter
A method for manufacturing an electron emitter, the method includes discharging a droplet of a function liquid containing a material for forming the conductive film onto a discharge surface of the...
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7576016 |
Process for manufacturing semiconductor device
An objective of this invention is to solve the problem that in ALD film deposition using a vertical batch processing machine advantageous for improving a throughput, reliability in a dielectric...
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7576015 |
Methods for manufacturing alignment layer, active device array substrate and color filter substrate
A method for manufacturing an alignment layer is provided, which includes the following steps. First, a substrate is provided. Next, an auxiliary layer is formed on the substrate. Then, an...
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7576014 |
Semiconductor device and manufacturing method thereof
A semiconductor device with a fuse 3 a to be cut for a circuit modification, of which passivation film coating the uppermost wiring layer is formed in a two-layer structure including a first...
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7572709 |
Method, apparatus, and system for low temperature deposition and irradiation annealing of thin film capacitor
Some embodiments of the invention include thin film capacitors formed in a package substrate of an integrated circuit package. At least one of the thin film capacitors includes a first electrode...
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7570411 |
Optical limiter having trimetallic nitride endohedral metallofullerence films
An exemplary optical limiter device ( 100 ) has an optically transmissive substrate ( 102 ) and a layer ( 104 ) on a first surface ( 106 ) of the substrate, the layer having a trimetallic nitride...
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7563728 |
Methods of modifying interlayer adhesion
Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method...
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7563727 |
Low-k dielectric layer formed from aluminosilicate precursors
A method for forming a high mechanical strength, low k, interlayer dielectric material with aluminosilicate precursors so that aluminum is facilely incorporated into the silicon matrix of the...
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7563628 |
Fabrication of optical waveguide devices
Disclosed is a method of fabricating an optical waveguide device including the steps of forming a mask over a waveguide core material layer so as to leave a portion of the layer exposed, and...
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7560395 |
Atomic layer deposited hafnium tantalum oxide dielectrics
A dielectric layer containing hafnium tantalum film arranged as a structure of one or more monolayers and a method of fabricating such a dielectric layer produce a dielectric layer for use in a...
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7557048 |
Methods of forming semiconductor constructions
The invention includes methods of forming and/or passivating semiconductor constructions. In particular aspects, various oxides of a semiconductor substrate can be formed by exposing semiconductive...
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7557047 |
Method of forming a layer of material using an atomic layer deposition process
Disclosed is a method of forming a layer of material using an atomic layer deposition (ALD) process in a process chamber of a process tool. In one illustrative embodiment, the method includes...
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7556970 |
Method of repairing damaged film having low dielectric constant, semiconductor device fabricating system and storage medium
A damaged layer repairing method repairs a damaged layer formed in a surface of a SiOCH film having a low dielectric constant film, containing silicon, carbon, oxygen and hydrogen and formed on a...
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7553749 |
Method of hiding transparent electrodes on a transparent substrate
A method of hiding transparent electrodes on a transparent substrate coats a solution of non-conductive nanoparticles onto the transparent substrate and the transparent electrodes after forming a...
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7553720 |
Non-volatile memory device and fabrication method thereof
A non-volatile memory device includes a buffer oxide film on a substrate; a polysilicon layer on the buffer oxide film; a silicon oxy-nitride (SiON) layer on the polysilicon layer, a first...
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7550356 |
Method of fabricating strained-silicon transistors
A method of fabricating strained-silicon transistors includes providing a semiconductor substrate, in which the semiconductor substrate includes a gate, at least a spacer, and a source/drain...
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RE40748 |
Process for producing semiconductor device
A process for producing a semiconductor device for forming a highly reliable wiring structure is provided that solves the problem occurring on using a xerogel or a fluorine resin in an inter level...
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7544625 |
Silicon oxide thin-films with embedded nanocrystalline silicon
A method is provided for forming a silicon oxide (SiOx) thin-film with embedded nanocrystalline silicon (Si). The method deposits SiOx, where x is in the range of 1 to 2, overlying a substrate,...
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7541297 |
Method and system for improving dielectric film quality for void free gap fill
A method of forming a silicon oxide layer on a substrate. The method includes providing a substrate and forming a first silicon oxide layer overlying at least a portion of the substrate, the first...
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7541296 |
Method for forming insulating film, method for forming multilayer structure and method for manufacturing semiconductor device
Disclosed is a method for effectively forming a Low-k insulating film. The method comprises the steps of: spin-coating on an underlying layer a precursor solution formed by dispersing Low-k...
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7541226 |
Manufacturing process of thin film transistor
A manufacturing process of a thin film transistor, includes:
forming a silicon film of a preset thickness, in which film stress becomes under 2.0×10 9 dyne/cm 2 in absolute value, on one...
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7528077 |
Semiconductor device and method for manufacturing the same
The present invention provides a semiconductor device having a coating film of a predetermined thickness provided along the circumference of a semiconductor light emitting element, and provide a...
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7524775 |
Method for producing a dielectric layer for an electronic component
A method for producing a dielectric layer extending between two or more elements of an electronic component includes arranging a free-standing dielectric layer above the elements and a deformable...
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7524735 |
Flowable film dielectric gap fill process
Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The...
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7521379 |
Deposition and densification process for titanium nitride barrier layers
In one embodiment, a method for forming a titanium nitride barrier material on a substrate is provided which includes depositing a titanium nitride layer on the substrate by a metal-organic...
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7521376 |
Method of forming a semiconductor structure using a non-oxygen chalcogen passivation treatment
A method and structure in which Ge-based semiconductor devices such as FETs and MOS capacitors can be obtained are provided. Specifically, the present invention provides a method of forming a...
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7514709 |
Organo-silsesquioxane polymers for forming low-k dielectrics
A low dielectric constant polymer, comprising monomeric units derived from a compound having the general formula I (R 1 —R 2 ) n —Si—(X 1 ) 4-n , wherein each X 1 is independently selected...
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