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7632707 Electronic device package and method of manufacturing the same  
The present invention discloses an electronic device package and a method of the package. In particular, an electronic device package and a method of the package suitable for a bumpless electronic...
7605095 Heat processing method and apparatus for semiconductor process  
A heat processing method for a semiconductor process includes placing a plurality of target substrates stacked at intervals in a vertical direction within a process field of a process container....
7541246 Method of manufacturing semiconductor device  
A gate insulating film and a gate electrode are formed on a silicon substrate. The gate insulating film contains at least hafnium, oxygen, fluorine, and nitrogen. The fluorine concentration is high...
7531464 Semiconductive device fabricated using a substantially disassociated chlorohydrocarbon  
The invention provides a method of fabricating a semiconductive device. In one aspect, the method comprises heating a gas mixture [ 225 ] comprising chlorohydrocarbon having a general formula of C...
7524742 Structure of metal interconnect and fabrication method thereof  
A process and structure for a metal interconnect includes providing a substrate with a first electric conductor, forming a first dielectric layer and a first patterned hard mask, using the first...
7358171 Method to chemically remove metal impurities from polycide gate sidewalls  
An embodiment includes a process of forming a gate stack that acts to resist the redeposition to the semiconductive substrate of mobilized metal such as from a metal gate electrode. An embodiment...
7326655 Method of forming an oxide layer  
A method for forming an oxide layer on a substrate. The method includes exposing a process gas containing H 2 , an oxygen-containing gas, and a halogen-containing oxidation accelerant gas to the...
7304002 Method of oxidizing member to be treated  
A method for oxidation of an object to be processed is provided wherein an oxide film can provide favorable film quality and a laminate structure of nitride film and oxide film can be obtained by a...
7256143 Semiconductor device having self-aligned contact plug and method for fabricating the same  
Provided are a semiconductor device having a self-aligned contact plug and a method of fabricating the semiconductor device. The semiconductor device includes conductive patterns, a first...
7235498 Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3  
This invention is embodied in an improved process for growing high-quality silicon dioxide layers on silicon by subjecting it to a gaseous mixture of nitrous oxide (N 2 O) and ozone (O 3 ). The...
7196021 HDP-CVD deposition process for filling high aspect ratio gaps  
A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a...
7183143 Method for forming nitrided tunnel oxide layer  
A method for forming a nitrided tunnel oxide layer is described. A silicon oxide layer as a tunnel oxide layer is formed on a semiconductor substrate, and a plasma nitridation process is performed...
7169714 Method and structure for graded gate oxides on vertical and non-planar surfaces  
A method for forming an oxide layer on a vertical, non-planar semiconductor surface provides a low stress oxide layer having a pristine interface characterized by a roughness of less than 3...
7148103 Multilevel poly-Si tiling for semiconductor circuit manufacture  
Method of manufacturing a semiconductor device, including a first baseline technology electronic circuit ( 1 ) and a second option technology electronic circuit ( 2 ) as functional parts of a...
7132362 Semiconductor device with contacts having uniform contact resistance and method for manufacturing the same  
A semiconductor device having a contact hole capable of maintaining contact resistance of a contact connecting multi-layered interconnections with each other and a method for manufacturing the same...
7129187 Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films  
A method for low-temperature plasma-enhanced chemical vapor deposition of a silicon-nitrogen-containing film on a substrate. The method includes providing a substrate in a process chamber, exciting...
7119033 Ion-assisted oxidation methods and the resulting structures  
Oxidation methods and resulting structures including providing an oxide layer on a substrate and then re-oxidizing the oxide layer by vertical ion bombardment of the oxide layer in an atmosphere...
7087536 Silicon oxide gapfill deposition using liquid precursors  
A silicon oxide film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A liquid Si—C—O—H precursor is...
6992370 Memory cell structure having nitride layer with reduced charge loss and method for fabricating same  
According to one embodiment, a memory cell structure comprises a semiconductor substrate, a first silicon oxide layer situated over the semiconductor substrate, a charge storing layer situated over...
6949478 Oxide film forming method  
A method of forming an oxide film having high insularity capability is performed within an ultra clean environment, using charged particles.
6933248 Method for transistor gate dielectric layer with uniform nitrogen concentration  
The instant invention describes a method for forming a dielectric film with a uniform concentration of nitrogen. The films are formed by first incorporating nitrogen into a dielectric film using...
6927121 Method for manufacturing ferroelectric random access memory capacitor  
A method for manufacturing an FeRAM capacitor is employed to enhance an adhesive property between a dielectric layer and a first bottom electrode of iridium. The method including the steps of:...
6887797 Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer  
An apparatus and method of forming an oxynitride insulating layer on a substrate performed by putting the substrate at a first temperature within the main chamber of a furnace, exposing the...
RE38674 Process for forming a thin oxide layer  
A novel process for forming a robust, sub-100 Å oxide is disclosed. Native oxide growth is tightly controlled by flowing pure nitrogen during wafer push and nitrogen with a small amount of oxygen...
6808993 Ultra-thin gate dielectrics  
An in-situ ultra dilute ammonia nitridation process and apparatus of the following ultra-thin chemically tailored gate dielectrics: DCE/O 2 (Trans 1,2-Dichloroethylene) based ultra-thin gate...
6723662 Methods of forming gate oxide films in integrated circuit devices using wet or dry oxidization processes with reduced chloride  
Methods of forming gate oxide films in integrated circuit devices using wet or dry oxidization processes with a reduced amount of chloride are disclosed. A gate oxide film is formed on a substrate...
6645884 Method of forming a silicon nitride layer on a substrate  
The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semiconductor wafer is located on a susceptor within a semiconductor processing...
6638877 Ultra-thin SiO2using N2O as the oxidant  
N 2 O is used as the oxidant for forming an ultra-thin oxide ( 14 ). The low oxidation efficiency of N 2 O compared to O 2 allows the oxidation temperature to be raised to greater than 850° C....
6624038 Capacitor electrode having uneven surface formed by using hemispherical grained silicon  
A lower electrode of a capacitor which has uneven surface formed by using HSG-Si (hemispherical grained silicon) and which is used, for example, in a semiconductor device such as DRAM device. Such...
6610614 Method for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates  
A method of forming an ultra-thin dielectric layer, including the steps of: providing a substrate having a semiconductor surface; forming an oxygen-containing layer on the semiconductor surface;...
6541393 Method for fabricating semiconductor device  
A semiconductor device is fabricated by a method comprising the steps of: selectively introducing a halogen element or argon into a device region 14 of a silicon substrate 10 ; and wet oxidizing...
6514879 Method and apparatus for dry/catalytic-wet steam oxidation of silicon  
A configuration of various chemical compound generators coupled to a furnace provides the environment for formation of extremely thin oxides of silicon on a wafer. Dichloroethylene is reacted with...
6448651 Semiconductor device having a multi-level metallization and its fabricating method  
Provided is a semiconductor device having a multi-level metallization. The device includes a semiconductor substrate having an active area, a first insulating layer deposited on the substrate, and...
6444593 Surface treatment of low-K SiOF to prevent metal interaction  
A method for using low dielectric SiOF in a process to manufacture semiconductor products, comprising the steps of obtaining a layer of SiOF, and depleting fluorine from a surface of the SiOF...
6407008 Method of forming an oxide layer  
Methods for forming nitrided oxides in semiconductor devices by rapid thermal oxidation, in which a semiconductor substrate having an exposed silicon surface is placed into a thermal process...
6387823 Method and apparatus for controlling deposition process using residual gas analysis  
A method for controlling a deposition process, includes providing a wafer in a chamber of a deposition tool, the deposition tool being adapted to operate in accordance with a recipe; providing...
6387827 Method for growing thin silicon oxides on a silicon substrate using chlorine precursors  
A method of growing a silicon oxide layer on a silicon substrate by means of a thermal oxidation in a furnace in the presence of a gaseous mixture, said mixture comprising oxygen and Cl 2 , said Cl...
6380103 Rapid thermal etch and rapid thermal oxidation  
At least both a rapid thermal etch step and a rapid thermal oxidation step are performed on a semiconductor substrate in situ in a rapid thermal processor. A method including an oxidation step...
6372667 Method of manufacturing a capacitor for semiconductor memory devices  
A method of manufacturing a capacitor for semiconductor memory devices is disclosed. According to the present invention, a lower electrode is formed on the semiconductor substrate. A Ta 2 O 5 ...
6368949 Post-spacer etch surface treatment for improved silicide formation  
Sub-micron dimensioned, ultra-shallow junction MOS and/or CMOS transistor devices have been reduced or a minimal junction leakage are formed by a salicide process wherein carbonaceous residue on...
6362114 Semiconductor processing methods of forming an oxynitride film on a silicon substrate  
A semiconductor processing method of forming an oxynitride film on a silicon substrate comprises placing a substrate in a reactor, the substrate having an exposed silicon surface, and combining...
6355581 Gas-phase additives for an enhancement of lateral etch component during high density plasma film deposition to improve film gap-fill capability  
A method for fabricating a silicon oxide and silicon glass layers at low temperature using High Density Plasma CVD with silane or inorganic or organic silane derivatives as a source of silicon,...
6316371 Method for the chemical treatment of a semiconductor substrate  
Method for the chemical treatment of a semiconductor substrate at a raised temperature, such as oxidization. To achieve a uniform treatment of comparatively large wafers in the radial direction, as...
6303522 Oxidation in an ambient comprising ozone and the reaction products of an organic chloro-carbon precursor  
The present invention is related to an efficient thermal oxidation process that allows the controlled growth of in-situ cleaned high quality thin oxides on a silicon-containing substrate. Said...
6291365 Method for manufacturing thin gate silicon oxide layer  
In a method for manufacturing a semiconductor device where a silicon substrate is loaded in an oxidation furnace whose temperature is a first value, the temperature of the oxidation furnace is...
6277765 Low-K Dielectric layer and method of making same  
A low dielectric constant material, suitable for use as an interlayer dielectric in microelectronic structures includes a porous silicon oxide layer. In a further aspect of the present invention, a...
6271152 Method for forming oxide using high pressure  
Field oxide is formed using high pressure. Oxidation of field regions between active regions is accomplished in a two-step process. A first oxide layer is formed in the field region. Then, a second...
6204199 Method for producing a semiconductor device  
A method and apparatus for producing a semiconductor device can provide a uniform film on a substrate. A substrate is introduced into a reaction chamber or tube (51) which has gas feed ports (52,...
6169035 Method of local oxidation using etchant and oxidizer  
A LOCOS method uses a reagent mixed of etchant and oxidizer to simultaneously perform the step of forming the FOX layer and the step of removing a mask layer of the conventional LOCOS method. The...
6162702 Self-supported ultra thin silicon wafer process  
A silicon wafer 2 has an ultra thin central portion 2 that is supported by a circumferential rim 3 of thicker silicon. The central region is thinned by conventional means using conventional removal...
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