Matches 51 - 97 out of 97 < 1 2
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6140251 Method of processing a substrate  
A method of processing a semiconductor substrate, comprising the steps of: heating a substance within a first chamber, at a selected temperature which is above the minimum decomposition temperature...
6130164 Semiconductor device having gate oxide formed by selective oxide removal and method of manufacture thereof  
A semiconductor device having a gate oxide layer formed by selective removal of the gate oxide layer and a process for manufacturing such a device is disclosed. A gate oxide layer is formed on a...
6114258 Method of oxidizing a substrate in the presence of nitride and oxynitride films  
A system and method of forming an oxide in the presence of a nitrogen-containing material. A substrate having a nitrogen-containing material on a surface is placed in a reaction chamber. An...
6114257 Process for modified oxidation of a semiconductor substrate using chlorine plasma  
A process for thermal oxidation of a semiconductor substrate comprising exposing the substrate to a chlorine plasma, and then heating the substrate in an oxidizing ambient. The substrate may...
6103601 Method and apparatus for improving film stability of halogen-doped silicon oxide films  
A fluorine-doped silicate glass (FSG) layer having a low dielectric constant and a method of forming such an insulating layer is described. The FSG layer is treated with a post-treatment step to...
6066572 Method of removing carbon contamination on semiconductor substrate  
A method of removing carbon contamination. On a semiconductor substrate having carbon contamination thereon, a sacrificial oxide layer is formed. During the formation of the sacrificial oxide...
6037258 Method of forming a smooth copper seed layer for a copper damascene structure  
A method for fabricating a copper interconnect structure, in a damascene type opening, comprised a thick copper layer, obtained via an electro-chemical deposition procedure, and comprised of an...
5858844 Method for construction and fabrication of submicron field-effect transistors by optimization of poly oxide process  
The present invention comprises an innovative gate oxidation process after the disposition of the gate and prior to the disposition of the source and the drain by exposing the gate to oxygen at a...
5846888 Method for in-situ incorporation of desirable impurities into high pressure oxides  
A desirable impurity, such as reactive gases and inert gases, is safely introduced into a substrate/oxide interface during high pressure thermal oxidation. Desirable impurities include chlorine,...
5721176 Use of oxalyl chloride to form chloride-doped silicon dioxide films of silicon substrates  
A process of forming chlorine-doped silicon dioxide films on a silicon substrate comprising oxidizing said silicon substrate in the presence of a chlorine source, thereby forming said...
5693578 Method of forming thin silicon oxide film with high dielectric breakdown and hot carrier resistance  
A method of forming a silicon oxide film by setting a silicon wafer in a chamber capable of introducing oxidizing gas and being evacuated and by heating the silicon wafer in an oxidizing...
5672525 Polysilicon gate reoxidation in a gas mixture of oxygen and nitrogen trifluoride gas by rapid thermal processing to improve hot carrier immunity  
A method of forming an FET transistor comprises forming a stack of a gate oxide layer and a control gate electrode on a surface of a doped semiconductor substrate with counterdoped source/drain...
5637528 Semiconductor device manufacturing method including dry oxidation  
A method of manufacturing a semiconductor device including the steps of: (a) forming a mask layer of a desired pattern on a silicon substrate surface or on an SiO 2 strain absorbing layer formed...
5599425 Predecomposition of organic chlorides for silicon processing  
A process for the use of organic chlorides having the general formula C x H y Cl y , C z Cl s , C r O u Cl 2 (r-u+1), C r O u Cl r -u+1 H r -u+1, wherein x=1-10, more preferably 1-6; y=x+1,...
5571734 Method for forming a fluorinated nitrogen containing dielectric  
This disclosure reveals a manufacturable and controllable method to fabricate a dielectric which increases the device current drive. A nitrogen-containing ambient is used to oxidize a surface of a...
5494852 High capacity semiconductor dopant deposition/oxidization process using a single furnace cycle  
A semiconductor deposition and oxidation process using a single furnace cycle. The temperature and gas mixture is stabilized inside the furnace prior to introduction of a dopant at a relatively low...
5360769 Method for fabricating hybrid oxides for thinner gate devices  
A method and system for fabricating semiconductor wafers is disclosed wherein an atomically clean, semiconductor substrate having a surface is provided in a rapid thermal processing chamber. One...
5294571 Rapid thermal oxidation of silicon in an ozone ambient  
Disclosed are methods for preparing SiO 2 layers in semiconductor devices by the rapid thermal oxidation of silicon in an ozone ambient.
5288662 Low ozone depleting organic chlorides for use during silicon oxidation and furnace tube cleaning  
A process for thermal oxidation of silicon or cleaning of furnace tubes used in semiconductor manufacturing by exposing the silicon or tube to temperatures above 700° C. while flowing a carrier...
5132244 Growth-modified thermal oxidation for thin oxides  
A method is disclosed for growing relatively thin (e.g., <250 Å) thermal oxides which results in lowering the defect density, mobile ion concentration, interface trapped charge density, and...
5057463 Thin oxide structure and method  
A method for forming a thin oxide layer structure includes the step of first growing a dry oxide layer. A layer grown in steam and chlorine is formed next, followed by a final dry oxide layer. An...
5043224 Chemically enhanced thermal oxidation and nitridation of silicon and products thereof  
A process for enhanced thermal oxidation and nitridation of silicon by introduction of fluorine into the oxidation and nitridation ambients.
4894353 Method of fabricating passivated tunnel oxide  
A method of fabricating a high-quality tunnel oxide layer includes a two-step oxidation process. The first oxidation step includes oxidizing a substrate in an atmosphere comprising oxygen and...
4612258 Method for thermally oxidizing polycide substrates in a dry oxygen environment and semiconductor circuit structures produced thereby  
A method of thermally oxidizing polycide substrates in a dry oxygen environment as well as a MOSFET structure provided by the method are disclosed. The method includes heating a plurality of...
4567061 Method for manufacture of insulating film and interface between insulation film and semiconductor  
An insulation film of improved properties and an interface of similarly improved properties between the insulation film and a semiconductor are produced by heating silicon, a silicon compound or a...
4557950 Process for deposition of borophosphosilicate glass  
A process for chemical vapor deposition of borophosphosilicate glass on a silicon wafer at reduced pressure is disclosed herein. The process includes a step of placing a silicon wafer within a...
4518630 Method for forming silicon oxide films  
Method for forming silicon oxide layers on silicon surfaces with at least two oxidation steps, in which a first step (B 1 ) is performed at a low oxidation temperature (T 1 ) in an atmosphere...
4490900 Method of fabricating an MOS memory array having electrically-programmable and electrically-erasable storage devices incorporated therein  
A method for fabricating an MOS memory array is disclosed, wherein the method includes steps for constructing electrically-programmable and electrically-erasable memory cells (2, 198, 200) in...
4409260 Process for low-temperature surface layer oxidation of a semiconductor substrate  
The specification discloses a process for forming a coherent, uniform oxide layer on the surface of a selected semiconductor material by heating a wafer of the selected semiconductor material at a...
4401691 Oxidation of silicon wafers to eliminate white ribbon  
Disclosed is a process for eliminating the migration of nitrogen or nitrogen hydrides (e.g., NH 3 ) to a Si-SiO 2 interface site during silicon-nitride-masked oxidation--using an HCl additive to...
4377605 Method for forming an insulating layer on a polycrystalline silicon layer of a semiconductor device using a two-step thermal oxidation technique  
When an insulating layer is formed on a polycrystalline silicon layer by thermally oxidizing the polycrystalline silicon layer, ambient gas to be used as an oxidizing gas comprises an oxygen gas...
4268538 High-pressure, high-temperature gaseous chemical method for silicon oxidation  
Apparatus and method for growing oxide on silicon wafers or silicon-coated wafers or other semiconductors for the semiconductor industry wherein the oxide growth is produced under high pressure and...
4231809 Method of removing impurity metals from semiconductor devices  
A process is disclosed for gettering deleterious metal impurities, particularly the transition metals such as Cu, Fe, Co, Ni and Cr from silicon wafers by high temperature treatment for a...
4155802 Method of producing semiconductor device involving the use of silicon nitride as an oxidation mask  
A method of producing a semiconductor device comprises removing all of the masking films used for forming desired semiconductor regions in the substrate, newly forming an insulation film and...
4139658 Process for manufacturing a radiation hardened oxide  
A pyrogenic oxide is grown on a silicon wafer in a furnace by oxidizing hydrogen in the presence of an excess amount of oxygen as well as anhydrous hydrogen chloride to produce steam within the...
4109030 Method for thermally oxidizing silicon  
A method of thermally oxidizing heated silicon substrates with a mixture of oxygen and nitrosyl chloride in an inert gas diluent such as nitrogen. The ratio of oxygen to nitrosyl chloride is...
4098924 Gate fabrication method for MNOS memory devices  
An improved method for growing the silicon oxide memory insulator of an MNOS memory transistor is disclosed. The oxide is grown by passing a mixture of inert gas and anhydrous HCL over the...
T954009 Method for the thermal oxidation of silicon with added chlorine  
the dry thermal oxidation of silicon semiconductor material to produce an oxide layer, such as the gate oxide of a field effect transistor, is carried out by flowing oxygen over the surface of the...
3837905 THERMAL OXIDATION OF SILICON  
Silicon dioxide is thermally grown on a silicon surface in an oxygen atmosphere containing trichloroethylene (C 2 HCl 3 ) vapor. Smaller concentrations of trichloroethylene provide clean oxide...
3447238 METHOD OF MAKING A FIELD EFFECT TRANSISTOR BY DIFFUSION,COATING WITH AN OXIDE AND PLACING A METAL LAYER ON THE OXIDE  
3301706 Process of forming an inorganic glass coating on semiconductor devices  
3287162 Silica films  
3260626 Method of producing an oxide coating on crystalline semiconductor bodies  
3711324 Title is not available  
3556880 Title is not available  
3692571 Title is not available  
3556879 Title is not available  
Matches 51 - 97 out of 97 < 1 2