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7642195 |
Hydrogen treatment to improve photoresist adhesion and rework consistency
A process for selectively removing photoresist, organic overlayers, and/or polymers/residues from a substrate without altering the surface chemistry and adhesion properties of the underlying...
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7641736 |
Method of manufacturing SiC single crystal wafer
A method of manufacturing an SiC single crystal wafer according to the present invention includes the steps of: (a) preparing an SiC single crystal wafer 10 with a mirror-polished surface; (b)...
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7629270 |
Remote plasma activated nitridation
A nitrogen precursor that has been activated by exposure to a remotely excited species is used as a reactant to form nitrogen-containing layers. The remotely excited species can be, e.g., N 2 , Ar,...
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7622338 |
Method for manufacturing semiconductor device
The present invention provides a method for forming a semiconductor region having a desired shape, and also provides a method for manufacturing a semiconductor device with few variations. Moreover,...
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7622396 |
Method of producing a semiconductor device
A semiconductor device is produced by providing a reaction chamber with a substrate and sequentially repeating steps of: supplying a first kind of gas into the reaction chamber, exhausting the...
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7605084 |
Method of gap-filling using amplitude modulation radio frequency power
A method of filling a gap on a substrate comprises disposing the substrate, on which the gap is formed, on a susceptor in a chamber; applying a source power to the chamber to generate plasmas into...
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7566482 |
SOI by oxidation of porous silicon
A method in which a SOI substrate structure is fabricated by oxidation of graded porous Si is provided. The graded porous Si is formed by first implanting a dopant (p- or n-type) into a...
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7550384 |
Semiconductor device and method for forming pattern in the same
A method for forming a fine pattern of a semiconductor device includes forming a first hard mask layer over a semiconductor substrate and a second hard mask layer over the first hard mask layer,...
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7541295 |
Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device according to one aspect of the present invention comprises: forming a gate insulation film on a semiconductor substrate in which element separation...
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7491656 |
Semiconductor device, method for forming silicon oxide film, and apparatus for forming silicon oxide film
A silicon oxide film ( 1701 ) serving as a gate insulating film of a semiconductor device contains Kr. Therefore, the stress in the silicon oxide film ( 1701 ) and the stress at the interface...
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7446023 |
High-density plasma hydrogenation
A high-density plasma hydrogenation method is provided. Generally, the method comprises: forming a silicon (Si)/oxide stack layer; plasma oxidizing the Si/oxide stack at a temperature of less than...
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7429369 |
Silicon nanoparticle nanotubes and method for making the same
A relatively thick electrode is positioned opposite the surface of a substrate/second electrode. The electrode and the substrate surface are both contacted by a solution including silicon...
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7371697 |
Ion-assisted oxidation methods and the resulting structures
Oxidation methods and resulting structures including providing an oxide layer on a substrate and then re-oxidizing the oxide layer by vertical ion bombardment of the oxide layer in an atmosphere...
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7326652 |
Atomic layer deposition using photo-enhanced bond reconfiguration
An atomic layer deposition process that reduces defective bonds formed when depositing atomic layers on a substrate or atomic layer when forming an integrated circuit device. As the layers are...
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7291566 |
Barrier layer for a processing element and a method of forming the same
In order to mitigate erosion of exposed processing elements in a processing system by the process and any subsequent contamination of the substrate in the processing system, processing elements...
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7288490 |
Increased alignment in carbon nanotube growth
Method and system for fabricating an array of two or more carbon nanotube (CNT) structures on a coated substrate surface, the structures having substantially the same orientation with respect to a...
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7238629 |
Deposition method, method of manufacturing semiconductor device, and semiconductor device
The present invention relates to a deposition method of a low dielectric constant insulating film, which comprises the steps of generating a first deposition gas containing at least one silicon...
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7232772 |
Substrate processing method
A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen...
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7232724 |
Radical oxidation for bitline oxide of SONOS
Methods are disclosed for fabricating multi-bit SONOS flash memory cells, comprising forming a first dielectric layer and a charge trapping layer over a substrate of a wafer and selectively etching...
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7229931 |
Oxygen plasma treatment for enhanced HDP-CVD gapfill
Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas...
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7183143 |
Method for forming nitrided tunnel oxide layer
A method for forming a nitrided tunnel oxide layer is described. A silicon oxide layer as a tunnel oxide layer is formed on a semiconductor substrate, and a plasma nitridation process is performed...
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7129187 |
Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films
A method for low-temperature plasma-enhanced chemical vapor deposition of a silicon-nitrogen-containing film on a substrate. The method includes providing a substrate in a process chamber, exciting...
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7129175 |
Method of manufacturing semiconductor device
A semiconductor device manufacturing method comprises forming a first insulating film including silicon, carbon, nitrogen, and hydrogen above a substrate in a first chamber, carrying the substrate...
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7122487 |
Method for forming an oxide with improved oxygen bonding
A deposition oxide interface with improved oxygen bonding and a method for bonding oxygen in an oxide layer are provided. The method includes depositing an M oxide layer where M is a first element...
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7119033 |
Ion-assisted oxidation methods and the resulting structures
Oxidation methods and resulting structures including providing an oxide layer on a substrate and then re-oxidizing the oxide layer by vertical ion bombardment of the oxide layer in an atmosphere...
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7112541 |
In-situ oxide capping after CVD low k deposition
A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric...
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7102141 |
Flash lamp annealing apparatus to generate electromagnetic radiation having selective wavelengths
Flash lamp apparatuses that generate electromagnetic radiation with wavelengths greater than and/or less than a defined range of wavelengths are disclosed.
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7098147 |
Semiconductor memory device and method for manufacturing semiconductor device
After a lower silicon oxide film is formed on a silicon region, a silicon film is formed on the lower silicon oxide film by, for example, a thermal CVD method. Subsequently, the silicon film is...
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7091129 |
Atomic layer deposition using photo-enhanced bond reconfiguration
An atomic layer deposition process that reduces defective bonds formed when depositing atomic layers on a substrate or atomic layer when forming an integrated circuit device. As the layers are...
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7087536 |
Silicon oxide gapfill deposition using liquid precursors
A silicon oxide film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A liquid Si—C—O—H precursor is...
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7045447 |
Semiconductor device producing method and semiconductor device producing apparatus including forming an oxide layer and changing the impedance or potential to form an oxynitride
A semiconductor device producing method using a plasma processing apparatus including a processing chamber, a substrate-supporting body which supports a substrate in the processing chamber, and a...
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7037861 |
Method and apparatus for oxidizing nitrides
A method for oxidizing a nitride film is disclosed, which includes the steps of: providing a nitride film formed on an electrically conductive substrate; irradiating the nitride film with a light...
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7030038 |
Low temperature method for forming a thin, uniform oxide
This invention pertains generally to forming thin oxides at low temperatures, and more particularly to forming uniformly thick, thin oxides. We disclose a low temperature method for forming a thin,...
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7008878 |
Plasma treatment and etching process for ultra-thin dielectric films
A method for dry etching a dielectric layer including providing a substrate; forming at least one overlying dielectric layer over the substrate; subjecting the at least one overlying layer to a...
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6995097 |
Method for thermal nitridation and oxidation of semiconductor surface
An embodiment of the instant invention is a method of forming a dielectric layer on a silicon-containing structure, the method comprising the steps of: providing a nitrogen-containing gas; heating...
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6987277 |
Systems and method for picking and placing of nanoscale objects utilizing differences in chemical and physical binding forces
A method for manipulating a nanoscale object deposited on a substrate. The surface of the substrate is passive. A target position is formed on the passive surface by the action of the tip of a...
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6930062 |
Methods of forming an oxide layer in a transistor having a recessed gate
A method of forming an oxide layer on a semiconductor substrate includes thermally oxidizing a surface of the substrate to form an oxide layer on the substrate, and then exposing the oxide layer to...
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6916739 |
Structural element and process for its production including bonding through an amorphous hard layer
A method for manufacturing structural elements provides a first part with a surface that is substantially copper and a second part with a surface of a metal. The surface of the first part is coated...
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6887725 |
Micro electron gun of quantum size effect type and flat display using such electron guns as well as methods of their manufacture
A micro electron gun that is capable of extracting electrons from a semiconductor utilizing a quantum size effect and that can be mounted individually for each of pixels is disclosed, as well as a...
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6869892 |
Method of oxidizing work pieces and oxidation system
A method of oxidizing work pieces according to the present invention comprises the steps of: containing a plurality of work pieces W in a processing vessel 22 which has a predetermined length and...
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6861104 |
Method of enhancing adhesion strength of BSG film to silicon nitride film
A method of enhancing adhesion strength of a boro-silicate glass (BSG) film to a silicon nitride film is provided. A semiconductor substrate with a silicon nitride film formed thereon is provided....
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6846752 |
Methods and devices for the suppression of copper hillock formation
The present invention provides embodiments of methods and devices for the suppression of copper hillocks. Copper hillocks are suppressed by capping the copper layer with a dielectric film before...
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6838380 |
Fabrication of high resistivity structures using focused ion beams
The present invention provides a method for creating microscopic high resistivity structures on a target by directing a focused ion beam toward an impact point on the target and directing a...
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6777347 |
Method to produce porous oxide including forming a precoating oxide and a thermal oxide
A method for forming porous silicon oxide film, comprising the following steps. A CVD chamber having inner walls and a wafer chuck/heater is provided. At least a portion of the CVD chamber inner...
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6767847 |
Method of forming a silicon nitride-silicon dioxide gate stack
A method of forming a silicon nitride-silicon dioxide composite insulator layer for use as a gate insulator stack for an MOSFET device, has been developed. The method features formation of the...
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6734072 |
Method of fabricating a MOSFET device using a spike rapid thermal oxidation procedure
A method of forming a conductive gate structure on an underlying gate insulator layer, without the use of a plasma dry etch conductive gate definition procedure, has been developed. After formation...
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6713348 |
Method for forming an etch mask during the manufacture of a semiconductor device
A method used during the formation of a semiconductor device comprises the steps of forming a polycrystalline silicon layer over a semiconductor substrate assembly and forming a silicon nitride...
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6713406 |
Method for depositing dielectric materials onto semiconductor substrates by HDP (high density plasma) CVD (chemical vapor deposition) processes without damage to FET active devices
Improved processes for depositing dielectric layers by HDP (High Density Plasma) CVD (Chemical Vapor Deposition) are described. One method controls the RF power applied to the side source RF power...
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6706643 |
UV-enhanced oxy-nitridation of semiconductor substrates
The oxynitride or oxide layer is formed on a semiconductor substrate by subjecting the substrate to UV radiation while exposed to a gaseous atmosphere of O 2 and one or more of N 2 , N 2 O, H 2 ...
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6696326 |
Cleaning method to prevent watermarks
In a cleaning method and a cleaning apparatus of a silicon substrate, after wet cleaning or etching of the substrate having a silicon surface is carried out, and during or after a pure water rinse...
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