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7623937 |
Semiconductor device manufacturing system and method for manufacturing semiconductor devices including calculating oxide film thickness using real time simulator
The present invention provides a solution for interleaving data frames, in a semiconductor device manufacturing system in which the processing apparatus for conducting a process on any one of a...
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7622402 |
Method for forming underlying insulation film
The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an...
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7618901 |
Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3
This invention is embodied in an improved process for growing high-quality silicon dioxide layers on silicon by subjecting it to a gaseous mixture of nitrous oxide (N 2 O) and ozone (O 3 ). The...
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7618891 |
Method for forming self-aligned metal silicide contacts
The present invention relates to a method for forming self-aligned metal silicide contacts over at least two silicon-containing semiconductor regions that are spaced apart from each other by an...
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7615499 |
Method for oxidizing a layer, and associated holding devices for a substrate
A method is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at...
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7611949 |
Method of fabricating metal-oxide-semiconductor transistor
A method of fabricating a metal-oxide-semiconductor (MOS) transistor is provided. First, a patterned hard mask layer with an opening therein is formed over the substrate. A spacer is formed on the...
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7611579 |
Systems and methods for synthesis of extended length nanostructures
A system for synthesizing nanostructures using chemical vapor deposition (CVD) is provided. The system includes a housing, a porous substrate within the housing, and on a downstream surface of the...
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7605095 |
Heat processing method and apparatus for semiconductor process
A heat processing method for a semiconductor process includes placing a plurality of target substrates stacked at intervals in a vertical direction within a process field of a process container....
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7598145 |
Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germanium
A method for producing a microelectronic device comprising a plurality of Si 1-y Ge y based semi-conductor zones (wherein 0<y≦1) that have different respective Germanium contents.
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7598140 |
Method of producing a semiconductor device having an oxide film
A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the...
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7569494 |
Apparatus and method for deposition of thin films
An apparatus for forming a multicomponent thin film, such as a superconducting thin film, on a substrate includes a holder for holding at least one substrate and a deposition/reaction vessel. The...
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7569487 |
Method for atomic layer deposition of materials using a pre-treatment for semiconductor devices
A method for forming atomic layer deposition. The method includes placing a semiconductor substrate (e.g., wafer, LCD panel) including an upper surface in a chamber. The upper surface includes one...
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7563628 |
Fabrication of optical waveguide devices
Disclosed is a method of fabricating an optical waveguide device including the steps of forming a mask over a waveguide core material layer so as to leave a portion of the layer exposed, and...
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7553704 |
Antifuse element and method of manufacture
An antifuse element ( 102, 152, 252, 302, 352, 402, 602, 652, 702 ) and method of fabricating the antifuse element, including a substrate material ( 101 ) having an active area ( 106 ) formed in an...
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7541297 |
Method and system for improving dielectric film quality for void free gap fill
A method of forming a silicon oxide layer on a substrate. The method includes providing a substrate and forming a first silicon oxide layer overlying at least a portion of the substrate, the first...
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7541295 |
Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device according to one aspect of the present invention comprises: forming a gate insulation film on a semiconductor substrate in which element separation...
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7541246 |
Method of manufacturing semiconductor device
A gate insulating film and a gate electrode are formed on a silicon substrate. The gate insulating film contains at least hafnium, oxygen, fluorine, and nitrogen. The fluorine concentration is high...
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7538008 |
Method for producing a layer structure
A layer structure comprising a smoothed interlayer and an overlying layer applied on the interlayer, wherein the interlayer is treated with a gaseous etchant containing hydrogen fluoride, a...
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7534731 |
Method for growing a thin oxynitride film on a substrate
A method for growing an oxynitride film on a substrate includes positioning the substrate in a process chamber, heating the process chamber, flowing a wet process gas comprising water vapor and a...
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7534730 |
Producing method of semiconductor device and substrate processing apparatus
Disclosed is a method for manufacturing a semiconductor device which comprises a step for carrying a plurality of substrates ( 1 ) in a process chamber ( 4 ), a step for supplying an...
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7531431 |
Methods for reducing contamination of semiconductor devices and materials during wafer processing
Methods of processing a semiconductor structure including a metal layer in the presence of organic material include flowing an aqueous mixture including an oxidizing agent over the semiconductor...
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7528041 |
Method of manufacturing semiconductor device that utilizes oxidation prevention film to form thick and thin gate insulator portions
A method of manufacturing a semiconductor device, including including preparing a semiconductor substrate having first to fourth active regions and field oxides, the third and fourth active regions...
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7528015 |
Tunable antifuse element and method of manufacture
A tunable antifuse element ( 102, 202, 204, 504, 952 ) and method of fabricating the tunable antifuse element, including a substrate material ( 101 ) having an active area ( 106 ) formed in a...
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7524745 |
Method and device for doping, diffusion and oxidation of silicon wafers under reduced pressure
Method and device for doping or diffusion, or oxidation of silicon wafers ( 4 ), the wafers being introduced into the chamber ( 2 ) of an oven ( 1 ) wherein is introduced at least a gas for...
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7524744 |
Method of producing SOI wafer and SOI wafer
The present invention provides a method of producing an SOI wafer, comprising at least steps of forming an oxygen ion-implanted layer by implanting oxygen ions into a silicon wafer from one main...
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7521375 |
Method of forming an oxinitride layer
In methods of forming an oxide layer and an oxynitride layer, a substrate is loaded into a reaction chamber having a first pressure and a first temperature. The oxide layer is formed on the...
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7521325 |
Semiconductor device and method for fabricating the same
A permeation preventing film of a silicon nitride film 16 is inserted between a silicon substrate 10 and a High-k gate insulation film 18 to thereby prevent the High-k gate insulation film ...
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7517813 |
Two-step oxidation process for semiconductor wafers
An efficient method for the thermal oxidation of preferably silicon semiconductor wafers using LOCOS (local oxidation of silicon) processes is described. The mechanical stresses of the wafers are...
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7514315 |
Methods of forming capacitor structures having aluminum oxide diffusion barriers
A multilayer electrode structure has a conductive layer including aluminum, an oxide layer formed on the conductive layer, and an oxygen diffusion barrier layer. The oxide layer includes zirconium...
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7498270 |
Method of forming a silicon oxynitride film with tensile stress
A method for forming a densified silicon oxynitride film with tensile stress and a semiconductor device including the densified silicon oxynitride film. The densified silicon oxynitride film can be...
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7494940 |
Post thermal treatment methods of forming high dielectric layers over interfacial layers in integrated circuit devices
High dielectric layers formed from layers of hafnium oxide, zirconium oxide, aluminum oxide, yttrium oxide, and/or other metal oxides and silicates disposed on silicon substrates or ozone oxide...
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7491656 |
Semiconductor device, method for forming silicon oxide film, and apparatus for forming silicon oxide film
A silicon oxide film ( 1701 ) serving as a gate insulating film of a semiconductor device contains Kr. Therefore, the stress in the silicon oxide film ( 1701 ) and the stress at the interface...
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7488652 |
Manufacturing method of gate oxidation films
After forming a field insulating film 12 on a substrate, sacrificing or gate oxidation films are formed as oxidation films 14 a and 14 b . An ion implantation layer 18 is formed by one or...
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7442655 |
Selective oxidation methods and transistor fabrication methods
The invention includes selective oxidation methods and transistor fabrication methods. In one implementation, a selective oxidation method includes positioning a substrate within a chamber. The...
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7439165 |
Method of fabricating tensile strained layers and compressive strain layers for a CMOS device
A process for forming both tensile and compressive strained silicon layers to accommodate channel regions of MOSFET or CMOS devices has been developed. After formation of shallow trench isolation...
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7435691 |
Micromechanical component and suitable method for its manufacture
A micromechanical component having a silicon substrate; a cavity provided in the substrate; and a diaphragm, provided on the surface of the substrate, which closes the cavity; the diaphragm...
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7435690 |
Method of preparing a silicon dioxide layer by high temperature oxidation on a substrate having, at least on the surface, germanium or a silicon-germanium alloy
Method of preparing a silicon dioxide layer by high-temperature oxidation on a substrate of formula Si 1-x Ge x in which x is greater than 0 and less than or equal to 1, the said method comprising...
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7429539 |
Nitriding method of gate oxide film
A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen...
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7425480 |
Semiconductor device and method of manufacture thereof
A method of manufacturing a MOS transistor incorporating a silicon oxide film serving as a gate insulating film and containing nitrogen and a polycrystalline silicon film serving as a gate...
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7420202 |
Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device
An electronic device can include a transistor structure of a first conductivity type, a field isolation region, and a layer of a first stress type overlying the field isolation region. For example,...
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7410911 |
Method for stabilizing high pressure oxidation of a semiconductor device
A method and apparatus for preventing N 2 O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus...
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7396729 |
Methods of forming semiconductor devices having a trench with beveled corners
A semiconductor device is formed by providing a substrate. A trench is formed in the substrate. Beveled surfaces are formed at upper portions of sidewalls of the trench opposite a bottom surface of...
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7387972 |
Reducing nitrogen concentration with in-situ steam generation
In-situ steam generation (ISSG) is used to reduce the nitrogen concentration in silicon and silicon oxide areas.
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7381658 |
Encapsulation of nano-dimensional structures by oxidation
This invention relates to a method of encapsulating nano-dimensional structures, comprising: depositing at least one material upon a substrate such that the material includes at least one portion;...
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7381620 |
Oxygen elimination for device processing
A method includes forming at least a portion of a semiconductor device in a processing chamber containing oxygen and removing substantially all of the oxygen from the processing chamber. The method...
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7378319 |
Method of forming double gate dielectric layers and semiconductor device having the same
A method of forming double gate dielectric layers composed of an underlying oxide layer and an overlying oxy-nitride layer is provided to prevent degradation of gate dielectric properties due to...
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7371630 |
Patterned backside stress engineering for transistor performance optimization
Some embodiments of the present invention include selectively inducing back side stress opposite transistor regions to optimize transistor performance.
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7368400 |
Method for forming oxide film in semiconductor device
The present invention relates to a method for forming an oxide film in semiconductor devices. According to the present invention, after an oxide film is formed, interface trap charge and oxide trap...
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7365028 |
Methods of forming metal oxide and semimetal oxide
The invention includes methods of forming metal oxide and/or semimetal oxide. The invention can include formation of at least one metal-and-halogen-containing material and/or at least one...
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7358171 |
Method to chemically remove metal impurities from polycide gate sidewalls
An embodiment includes a process of forming a gate stack that acts to resist the redeposition to the semiconductive substrate of mobilized metal such as from a metal gate electrode. An embodiment...
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