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5989962 Semiconductor device having dual gate and method of formation  
The invention comprises a method of forming a semiconductor device is provided where a first gate insulator layer 26 is formed on an outer surface of semiconductor substrate 24. A mask body 28 is...
5972742 Method of making thin film transistor with anodic oxidation  
An improved method of forming insulated gate field effect transistors is described. In accordance with the method, gate electrodes are formed from metal such as aluminum together with wirings...
5972800 Method for fabricating a semiconductor device with multi-level structured insulator  
A method for fabricating a semiconductor device with a multi-level insulator formed on a semiconductor substrate is provided, which enables restraint of impurity atoms doped into a material...
5972801 Process for reducing defects in oxide layers on silicon carbide  
A method is disclosed for obtaining improved oxide layers and resulting improved performance from oxide based devices. The method comprises exposing an oxide layer on a silicon carbide layer to an...
5972802 Prevention of edge stain in silicon wafers by ozone dipping  
A method of preventing edge stain in silicon wafers from the edge polishing step with an alkaline slurry, the method consisting of formation of an oxide layer by an ozone dipping step prior to edge...
5960289 Method for making a dual-thickness gate oxide layer using a nitride/oxide composite region  
A method for forming a dual gate oxide (DGO) structure begins by forming a first oxide layer (106) within active areas (110) and (112). A protection layer (108a) is then formed over the layer...
5946588 Low temperature sub-atmospheric ozone oxidation process for making thin gate oxides  
A process for making thin gate oxides comprising the layering of a semiconductor substrate with at least an oxide layer and a nitride layer. The layers are then patterned and etched, thereby...
5940692 Method of forming a field effect transistor  
A method of reducing diffusion of impurity dopants within a semiconductive material beneath a field effect transistor gate in a process of forming a field effect transistor includes, a) providing a...
5940736 Method for forming a high quality ultrathin gate oxide layer  
This invention includes a novel synthesis of a three-step process of growing, depositing and growing SiO 2 under low pressure, e.g., 0.2-10 Torr, to generate high quality, robust and reliable gate...
5940722 Method of manufacturing a semiconductor comprising an oxygen-containing silicon wafer  
Si melt is prepared in a crucible with a quartz surface, the crucible and a seed crystal are rotated at a relative speed of 30 rpm or more to melt quartz into Si melt, and a Si single crystal ingot...
5930620 Resistance to gate dielectric breakdown at the edges of shallow trench isolation structures  
A semiconductor process in which at least one isolation structure is formed in a semiconductor substrate. An oxygen bearing species is introduced into portions of the semiconductor substrate...
5926741 Method of forming gate dielectric films for MOSFETs without generation of natural oxide films  
In a method of forming gate dielectric films, a surface of a Si wafer is first cleaned in an inert gas ambient into a clean state having no naturally oxidized films. Then, after replacing the inert...
5912068 Epitaxial oxides on amorphous SiO.sub.2 on single crystal silicon  
A process for forming a structure including an epitaxial layer of a oxide material such as yttria-stabilized zirconia on a thick layer of amorphous silicon dioxide having a thickness of at least...
5908316 Method of passivating a semiconductor substrate  
A method of passivating a semiconductor substrate includes singulating (13) a semiconductor substrate (23) from a semiconductor wafer, coupling (14) a heatsink (21) to the semiconductor substrate...
5908312 Semiconductor device fabrication  
A method of preventing diffusion penetration of the dopant used to dope polysilicon gate material in a MOSFET is disclosed. Atomic nitrogen is introduced into the substrate prior to gate oxide...
5904575 Method and apparatus incorporating nitrogen selectively for differential oxide growth  
A method for forming an oxide on the surface of a semiconductor substrate. The method includes the steps of: placing the semiconductor substrate in an atmosphere containing an atmosphere of an...
5904514 Method for producing electrodes of semiconductor device  
A first pair electrodes consisting of an anode to which a plurality of wiring lines to be anodized are connected and a cathode that is opposed to the anode, and a second pair electrodes for...
5904574 Process of making semiconductor device and improved semiconductor device  
A semiconductor device and a method for making the semiconductor device is provided. The semiconductor device has a silicon surface of a silicon substrate from which particles and metallic...
5902135 Method for removing crystal defects in silicon wafers  
A method of removing vacancies in the crystal lattice of silicon wafers is provided. In particular, silicon wafers obtained from drawn rods have significantly higher defect densities in the central...
5891809 Manufacturable dielectric formed using multiple oxidation and anneal steps  
A method of forming a thin, robust nitrided oxide layer. The process results in a manufacturable, uniform, low-defect density, reliable nitrided oxide that may be used as a gate dielectric, as a...
5885904 Method to incorporate, and a device having, oxide enhancement dopants using gas immersion laser doping (GILD) for selectively growing an oxide layer  
A method for forming a uniform and reliable oxide layer on the surface of a semiconductor substrate using projection gas immersion laser doping (P-GILD) is provided. A semiconductor substrate is...
5885870 Method for forming a semiconductor device having a nitrided oxide dielectric layer  
In one embodiment a non-volatile memory device having improved reliability is formed by oxidizing a first portion of a semiconductor substrate (12) to form a first silicon dioxide layer (14). The...
5883013 Method of producing semiconductor device  
A method of forming a silicone resin film for protecting a semiconductor substrate on the substrate for a certain period of time and then removing the film from the substrate including the steps...
5879960 Manufacturing method of thin film diode for liquid crystal display device  
A thin film diode (8) between a data line (12) and a drive electrode (13), which is free from breakage in an upper layer film (4), is formed on one inner surface of a glass substrate (1) sealing a...
5869405 In situ rapid thermal etch and rapid thermal oxidation  
At least both a rapid thermal etch step and a rapid thermal oxidation step are performed on a semiconductor substrate in situ in a rapid thermal processor. A method including an oxidation step...
5856242 Method of producing dielectric thin film element  
A method for preparing an oxide dielectric thin film, for use in a dielectric thin film device, is described. Briefly, a film forming chamber is heated, and a thin film of dielectric, about 200 nm...
5851892 Fabrication sequence employing an oxide formed with minimized inducted charge and/or maximized breakdown voltage  
A semiconductor structure is provided having an improved oxide with minimal irregularities and charge trap densities. The oxide is formed by an oxidation process which controls temperature and...
5851888 Controlled oxide growth and highly selective etchback technique for forming ultra-thin oxide  
A method for fabrication a gate dielectric in which an initial dielectric layer comprising a sacrificial portion and a permanent portion is formed on the semiconductor substrate. Thereafter the...
5849102 Method of cleaning a surface of a semiconductor substrate by a heat treatment in an inert gas atmosphere  
A method of cleaning a surface of a semiconductor comprising the steps of a) washing the semiconductor surface with chemicals to remove particles and metal impurities from the surface; b) inserting...
5846887 Method for removing defects by ion implantation using medium temperature oxide layer  
Disclosed is a method for the shallow junction having a low sheet resistance and an improved electric characteristics, using the medium temperature CVD oxide layer deposited on the source/drain...
5846888 Method for in-situ incorporation of desirable impurities into high pressure oxides  
A desirable impurity, such as reactive gases and inert gases, is safely introduced into a substrate/oxide interface during high pressure thermal oxidation. Desirable impurities include chlorine,...
5840610 Enhanced oxynitride gate dielectrics using NF.sub.3 gas  
A semiconductor manufacturing process in which single crystal silicon substrate is immersed into an oxidation chamber maintained at a first temperature between 400° and 700° C. for a first...
5834353 Method of making deep sub-micron meter MOSFET with a high permitivity gate dielectric  
The method of the present invention includes forming a silicon oxynitride layer on a substrate. Then, a dielectric layer with high permitivity is deposited by chemical vapor deposition on the...
5830532 Method to produce ultrathin porous silicon-oxide layer  
A method for producing a porous film on a silicon substrate is described. The substrate 14 is placed in a vacuum chamber in the presence of oxygen at specified pressure and temperature for a period...
5821172 Oxynitride GTE dielectrics using NH.sub.3 gas  
A semiconductor manufacturing process in which a single crystal silicon semiconductor substrate is immersed in an oxidation chamber maintained at a first temperature preferably between 400° and...
5817557 Process of fabricating tunnel-oxide nonvolatile memory devices  
A process including the steps of forming a gate oxide layer on a semiconductor substrate; masking the gate oxide layer with a nitride mask forming openings in the gate oxide layer using the nitride...
5817581 Process for the creation of a thermal SiO.sub.2 layer with extremely uniform layer thickness  
Disclosed is a reproducible process for making an SiO 2 layer by thermal oxidation which assures an extremely uniform thickness of the SiO 2 layer of approximately 1%. The process of the...
5798303 Etching method for use in fabrication of semiconductor devices  
An etching method includes providing a first surface and a second surface with the second surface lying substantially vertical to the first surface. A material is provided over at least a portion...
5798141 Method for semiconductor filming  
A method of semiconductor filming wherein a thin film is deposited on a wafer under an atmospheric pressure, which comprises the steps of simultaneously supplying a reactive gas and an inert gas to...
5786254 Hot-carrier reliability in submicron MOS devices by oxynitridation  
A method of manufacturing a semiconductor device with reduced hot-carrier induced degradation wherein a nitrogen species is introduced into the gate oxide layer. The introduction of the nitrogen...
5786277 Method of manufacturing a semiconductor device having an oxide film of a high quality on a semiconductor substrate  
On manufacturing a semiconductor device comprising a semiconductor substrate having a principal surface and an objective oxide film on the semiconductor substrate, the semiconductor substrate is...
5780342 Method for fabricating dielectric films for non-volatile electrically erasable memories  
A method for forming a high-performance oxide as a tunneling dielectric for non-volatile memory applications. A silicon film containing amorphous silicon and good crystalline silicon micrograins is...
5776821 Method for forming a reduced width gate electrode  
A method for fabricating a semiconductor integrated circuit structure having a reduced width gate electrode. A pre-gate electrode having a width is first delineated by conventional lithography...
5770495 Method of fabricating semiconductor device including high temperature heat treatment  
The invention provides a method of fabricating a semiconductor device, including the steps of (a) forming an impurity region at a surface of a silicon substrate, (b) depositing an insulative film...
5750428 Self-aligned non-volatile process with differentially grown gate oxide thickness  
A method of fabricating a novel electrically erasable programmable read only memory (EEPROM) cell for use in semiconductor memories is disclosed herein. Since the degree of ion implantation in the...
5750436 Thermal processing method and apparatus therefor  
An Si 3 N 4 layer is formed on a surface of a wafer, which is an object to be processed, at a high temperature of, for example, 780° C., using a vertical thermal processing apparatus having a...
5736459 Method to fabricate a polysilicon stud using an oxygen ion implantation procedure  
A process for creating a MOSFET device, using a polysilicon contact stud, in a sub-micron diameter contact hole, used to interconnect an underlying active device region, in a semiconductor...
5735949 Method of producing electronic, electrooptical and optical components  
A buried amorphous layer on a crystalline substrate with a monocrystalline surface layer, which is transformed into a mixed-crystal or chemical compound, avoids the formation of lattice defects at...
5736454 Method for making a silicon dioxide layer on a silicon substrate by pure water anodization followed by rapid thermal densification  
The present invention relates to a method for forming a silicon dioxide layer on a silicon substrate, which is suitable for use as a thin-gate oxide. The method includes conducting an electrolytic...
5731246 Protection of aluminum metallization against chemical attack during photoresist development  
A conductive layer in a semiconductor device is protected against chemical attack by a photoresist developer by forming a protective film overlying the conductive layer. The protective film is...
Matches 401 - 450 out of 555 < 1 2 3 4 5 6 7 8 9 10 11 12 >