Matches 351 - 400 out of 557 < 1 2 3 4 5 6 7 8 9 10 11 12 >
Match Document Document Title
6245660 Process for production of semiconductor device having contact plugs with reduced leakage current  
A method for making a semiconductor device having an inter-layer insulating film formed on a semiconductor substrate and contact plugs contacting with the surface of the semiconductor substrate...
6245689 Process for reliable ultrathin oxynitride formation  
A process for growing an ultra-thin dielelctric layer for use as a MOSFET gate or a tunnel oxide for EEPROM's is described. A silicon oxynitride layer, with peaks in nitrogen concentration at the...
6239045 Semiconductor producing apparatus and producing method for epitaxial wafer using same  
By perfectly preventing a particle from being attached on a silicon wafer or a silicon epitaxial wafer before and after the silicon epitaxial growth, pit formation on the silicon epitaxial layer in...
6235615 Generation of low work function, stable compound thin films by laser ablation  
Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example,...
6235591 Method to form gate oxides of different thicknesses on a silicon substrate  
A method of fabricating gate oxides of different thicknesses has been achieved. Active area isolations are provided in a silicon substrate to define low voltage sections and high voltage sections...
6232244 Methodology for achieving dual gate oxide thicknesses  
Dual gate oxide layer thicknesses are achieved by depositing a thin blocking layer on active regions of a semiconductor substrate, such as silicon nitride, oxynitride, or oxide. Selected active...
6221788 Semiconductor and a method for manufacturing an oxide film on the surface of a semiconductor substrate  
The semiconductor of the present invention comprises at least an oxide film and a metal thin film on the surface of the semiconductor. The metal thin film includes a metal serving as an oxidation...
6221789 Thin oxides of silicon  
An oxidation process that produces multi-layer, yet very thin oxides of silicon, formed on silicon substrates, includes pushing wafers at a particular range of speeds, into a furnace at a...
6214724 Semiconductor device and manufacturing method therefor  
The semiconductor device comprises a semiconductor substrate, a gate insulating film formed on the semiconductor substrate and a gate electrode formed on the gate insulating film. The gate...
6211091 Self-aligned eetching process  
The invention describes a self-aligned etching process. A conductive layer and a first insulating layer are formed on a substrate in sequence, and then the conductive layer and the first insulating...
6207591 Method and equipment for manufacturing semiconductor device  
A silicon wafer is heated from an initial pre-heating temperature (T 0 ) up to a first annealing temperature (T 1 ) by a rapid heating up step using an IR lamp. A first annealing is executed at the...
6207531 Shallow trench isolation using UV/O3 passivation prior to trench fill  
A method of forming a shallow trench isolation on a substrate is disclosed. The method comprises: forming a pad oxide layer on the substrate; forming a dielectric layer on the pad oxide layer;...
6204198 Rapid thermal annealing of doped polycrystalline silicon structures formed in a single-wafer cluster tool  
An embodiment of the instant invention is a method of fabricating an electronic device over a semiconductor substrate, the method comprising the steps of: forming a doped polycrystalline silicon...
6204205 Using H2anneal to improve the electrical characteristics of gate oxide  
A new method is provided to anneal the gate oxide after the gate oxide has been grown. The first embodiment of the invention teaches a two step anneal, a first anneal using H 2 followed by a...
6200872 Semiconductor substrate processing method  
A purchased silicon substrate 10 is subjected to D-HF treatment, SC-1 treatment, etc. to expose the surface of the silicon substrate 10. Then, the silicon substrate 10 having the surface exposed...
6191051 Wafer storing system having vessel coated with ozone-proof material and method of storing semiconductor wafer  
A gate oxide layer grown on a semiconductor wafer is liable to be contaminated by organic compound particles in a clean room between the growth of the oxide and the next deposition step, and the...
6187665 Process for deuterium passivation and hot carrier immunity  
A process sequence for forming a semiconductor device utilizes a passivation annealing process using deuterium which enhances immunity to hot carrier effects and extends device lifetime. The...
6180539 Method of forming an inter-poly oxide layer  
A method of forming an inter-poly oxide layer is provided. A substrate having a field oxide layer thereon is provided. A first polysilicon layer is formed on the field oxide layer. The surface of...
6171104 Oxidation treatment method and apparatus  
In a method wherein semiconductor wafers are accommodated within a treatment furnace that has been heated beforehand to a predetermined temperature, the temperature within the treatment furnace is...
6169035 Method of local oxidation using etchant and oxidizer  
A LOCOS method uses a reagent mixed of etchant and oxidizer to simultaneously perform the step of forming the FOX layer and the step of removing a mask layer of the conventional LOCOS method. The...
6165914 Method for fabricating semiconductor devices with thick high quality oxides  
The rapid growth of thick thermally grown oxide layers on silicon wafers is described herein. By patterning and etching a plurality of pillars on the surface of the silicon wafer, oxide growth is...
6156603 Manufacturing method for reducing the thickness of a dielectric layer  
The thickness of a capacitor dielectric layer is reduced by a manufacturing method. A first polysilicon layer is deposited on a substrate that has an isolation structure. Subsequently, nitrogen...
6150277 Method of making an oxide structure having a finely calibrated thickness  
A process of growing silicon oxide to a highly calibrated thickness is provided. In one embodiment, a silicon precursor material is deposited to a first thickness on a substrate, such as a fused...
6150283 Thin film transistor fabrication method, active matrix substrate fabrication method, and liquid crystal display device  
To provide a TFT fabrication method capable of forming on a large-surface area substrate with uniform film thickness and at high deposition rate of film, while being a low-temperature process, a...
6150220 Insulation layer structure and method for making the same  
A dual thickness gate insulation layer, for use with, e.g., a dual gate MOSFET (Metal Oxide Semiconductor Field Effect Transistor), is formed using a more simplified method and improves the...
6147008 Creation of multiple gate oxide with high thickness ratio in flash memory process  
A new method is provided for the creation of an oxide layer that contains three different thicknesses. A first layer of oxide is grown on the surface of a substrate; a first layer of photoresist is...
6146948 Method for manufacturing a thin oxide for use in semiconductor integrated circuits  
A method for forming a gate dielectric having different thickness begins by providing a substrate (12). A sacrificial oxide (14) is formed overlying the substrate (12). A first portion (11) of the...
6143608 Barrier layer decreases nitrogen contamination of peripheral gate regions during tunnel oxide nitridation  
This invention describes methods for producing gate oxide regions in periphery regions of semiconductor chips, wherein the gate oxide regions have improved electrical properties. The methods...
6143669 Method of growing gate oxides  
A method for manufacturing a gate oxide film in a semiconductor device includes: preparing a semiconductor substrate having a first and a second active region; implanting germanium ions into the...
6136671 Method for forming gate oxide layers  
A method of forming gate oxide layers. A first and a second poly-silicon gates are formed over a substrate. An amorphous silicon layer is formed on the first poly-silicon gate, followed by...
6130164 Semiconductor device having gate oxide formed by selective oxide removal and method of manufacture thereof  
A semiconductor device having a gate oxide layer formed by selective removal of the gate oxide layer and a process for manufacturing such a device is disclosed. A gate oxide layer is formed on a...
6124210 Method of cleaning surface of substrate and method of manufacturing semiconductor device  
The present invention relates to a method of cleaning a surface of a substrate employed prior to film formation by using the CVD method which uses a reaction gas containing an ozone containing gas...
6114258 Method of oxidizing a substrate in the presence of nitride and oxynitride films  
A system and method of forming an oxide in the presence of a nitrogen-containing material. A substrate having a nitrogen-containing material on a surface is placed in a reaction chamber. An...
6114257 Process for modified oxidation of a semiconductor substrate using chlorine plasma  
A process for thermal oxidation of a semiconductor substrate comprising exposing the substrate to a chlorine plasma, and then heating the substrate in an oxidizing ambient. The substrate may...
6110842 Method of forming multiple gate oxide thicknesses using high density plasma nitridation  
A method for forming integrated circuits having multiple gate oxide thicknesses. A high density plasma is used for selective plasma nitridation to reduce the effective gate dielectric thickness in...
6103599 Planarizing technique for multilayered substrates  
The present invention provides a multilayered wafer 10 such as an SOI wafer having a novel implanted layer. This implanted layer is removable and provides a resulting wafer having a substantially...
6096613 Method for poly-buffered locos without pitting formation  
The present invention proposes a method for fabricating field oxide regions for isolation by an improved poly-buffered local oxidation of silicon (PBLOCOS) process. A polysilicon layer is utilized...
6093659 Selective area halogen doping to achieve dual gate oxide thickness on a wafer  
A method for forming an integrated circuit having multiple gate oxide thicknesses is disclosed herein. The circuit (10) is processed up to gate oxide formation. A pattern (36) is then formed...
6090682 Isolation film of semiconductor device and method for fabricating the same comprising a lower isolation film with a upper isolation film formed on top  
Disclosed are an isolation film of a semiconductor device and a method for fabricating the same, which prevent the isolation film from being damaged due to misalignment when forming a contact hole...
6087238 Semiconductor device having reduced-width polysilicon gate and non-oxidizing barrier layer and method of manufacture thereof  
A semiconductor device having a reduced polysilicon gate electrode width is provided along with a process for manufacturing such a device. In accordance with the present invention, a semiconductor...
6080683 Room temperature wet chemical growth process of SiO based oxides on silicon  
Disclosed is a room temperature wet chemical growth (RTWCG) process of SiO-based insulator coatings on silicon substrates for electronic and photonic (optoelectronic) device applications. The...
6063680 MOSFETS with a recessed self-aligned silicide contact and an extended source/drain junction  
The method of the present invention includes forming a silicon dioxide layer, a first conductive layer and a first oxide layer on a silicon substrate to define a gate region of transistors. Then, a...
6040207 Oxide formation technique using thin film silicon deposition  
A semiconductor process in which a silicon film is chemically vapor deposited upon a native oxide film as part of the gate oxide formation process. The invention contemplates a method of forming a...
6040019 Method of selectively annealing damaged doped regions  
A method of forming a region of impurity in a semiconductor substrate with minimal damage. The method includes the steps of: forming a reaction-inhibiting impurity region in the semiconductor...
6030873 Semiconductor device with a semiconductor layer formed on an insulating film and manufacturing method thereof  
A semiconductor device which can prevent formation of a parasitic transistor and degradation in its threshold voltage is obtained. In the semiconductor device, a sidewall insulating film the width...
6024801 Method of cleaning and treating a semiconductor device including a micromechanical device  
A method of cleaning and treating a device, including those of the micromechanical (10) and semiconductor type. The surface of a device, such as the landing electrode (22) of a digital micromirror...
6025280 Use of SiD.sub.4 for deposition of ultra thin and controllable oxides  
This invention includes a novel synthesis of a three-step process of growing, depositing and growing SiO 2 under low pressure, e.g., 0.2-10 Torr, to generate high quality, robust and reliable gate...
6022784 Method for manufacturing a semiconductor device  
A method (50) for designing a semiconductor device (10). The method (50) has an annealing step (59). In the annealing step (59), the semiconductor device (10) is annealed in an ambient containing...
6022796 Geometrical control of device corner threshold  
Corner conduction in a conduction channel of a field effect transistor is controlled by the geometrical configuration of the gate oxide and gate electrode at the sides of the conduction channel....
6017786 Method for forming a low barrier height oxide layer on a silicon substrate  
This invention relates to a method for forming a low barrier height oxide layer on the surface of a crystalline silicon substrate, comprising: (A) forming spaced field oxide regions on the surface...
Matches 351 - 400 out of 557 < 1 2 3 4 5 6 7 8 9 10 11 12 >