Matches 251 - 300 out of 559 < 1 2 3 4 5 6 7 8 9 10 11 12 >
Match Document Document Title
6599845 Oxidizing method and oxidation system  
An oxidation method of oxidizing surfaces of workpieces heated at a predetermined temperature in a vacuum atmosphere in a processing vessel produces active hydroxyl and active oxygen species. The...
6593253 Method of manufacturing semiconductor device  
A high quality thermal oxide film is provided. For the purpose of the film, a cooling step is conducted after replacing an atmosphere in the diffusion furnace ( 1 ) with a high purity gas mixture...
6593077 Method of making thin films dielectrics using a process for room temperature wet chemical growth of SiO based oxides on a substrate  
Disclosed is a room temperature wet chemical growth (RTWCG) process of SiO-based insulator coatings on silicon substrates for electronic and photonic (optoelectronic) device applications. The...
6586345 Method of manufacturing a semiconductor device wiring layer having an oxide layer between the polysilicon and silicide layers  
In forming a conduction film in a semiconductor device, after an uneven natural oxide film on a silicon film has been once removed, an even and clean silicon oxide film is formed by an oxidizing...
6573192 Dual thickness gate oxide fabrication method using plasma surface treatment  
A method of forming on a common semiconductor body (substrate) silicon oxide layers of different thicknesses uses plasma treatment on selected portions of an original thermally grown silicon oxide...
6573141 In-situ etch and pre-clean for high quality thin oxides  
The present invention provides a method for improving the quality of thin oxides formed upon a semiconductor body. The etch and pre-clean processes are performed in situ, taking place in a single...
6573193 Ozone-enhanced oxidation for high-k dielectric semiconductor devices  
A low temperature ozone-enhanced oxidation process is presented whereby amorphous high dielectric constant film devices are subject to oxidation processes at temperatures whereby crystallization of...
6566199 Method and system for forming film, semiconductor device and fabrication method thereof  
An object of the present invention is to provide a film-forming method, a film-forming system, etc. capable of achieving adequate thickness repeatability and uniformity and sufficiently large...
6566263 Method of forming an HDP CVD oxide layer over a metal line structure for high aspect ratio design rule  
A method of forming an HDP CVD oxide layer over a metal line structure, comprising the following steps. A semiconductor structure having metal lines formed thereon to form a metal line structure is...
6559069 Process for the electrochemical oxidation of a semiconductor substrate  
In a process for the electrochemical oxidation of a semiconductor substrate that has recesses, such as for example, capacitor trenches or mesopores, formed in a silicon surface region, self-limited...
6559068 Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor  
A method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor (MOSFET) is provided. Specifically, the present invention provides a method...
6551947 Method of forming a high quality gate oxide at low temperatures  
A method of low-temperature oxidation of a silicon substrate includes placing a silicon wafer in a vacuum chamber; maintaining the silicon wafer at a temperature of between about room temperature...
6551946 TWO-STEP OXIDATION PROCESS FOR OXIDIZING A SILICON SUBSTRATE WHEREIN THE FIRST STEP IS CARRIED OUT AT A TEMPERATURE BELOW THE VISCOELASTIC TEMPERATURE OF SILICON DIOXIDE AND THE SECOND STEP IS CARRIED OUT AT A TEMPERATURE ABOVE THE VISCOELASTIC TEMPERATURE  
A process for forming an oxide layer includes forming a first oxide portion over a substrate at a temperature below a threshold temperature. A second oxide portion is formed under the first oxide...
6548363 Method to reduce the gate induced drain leakage current in CMOS devices  
A method for forming FET devices with attenuated gate induced drain leakage current. There is provided a silicon semiconductor substrate employed within a microelectronics fabrication. There is...
6548422 Method and structure for oxide/silicon nitride interface substructure improvements  
A transistor gate dielectric structure includes an oxide layer formed on a substrate, a superjacent nitride layer and a transition layer interposed therebetween. The presence of the transition...
6548335 Selective epitaxy to reduce gate/gate dielectric interface roughness  
Channel carrier mobility is increased by reducing gate/gate dielectric interface roughness, thereby reducing surface scattering. Embodiments include depositing a layer of silicon by selective...
6544907 Method of forming a high quality gate oxide layer having a uniform thickness  
The present invention provides a method for manufacturing a high quality oxide layer having a uniform thickness. The method includes providing a semiconductor substrate, and forming an oxide layer...
6541394 Method of making a graded grown, high quality oxide layer for a semiconductor device  
A method for making an oxide layer on a silicon substrate produces an oxide layer including graded portions with greatly reduced stress. The method includes growing a first oxide portion over a...
6537926 Process for improving the thickness uniformity of a thin oxide layer in semiconductor wafer fabrication  
A two-step progressive thermal oxidation process is provided to improve the thickness uniformity of a thin oxide layer in semiconductor wafer fabrication. A semiconductor wafer, e.g., of silicon,...
6537911 Chemical vapor deposition method  
In a CVD method using a CVD system in which the inside of the vacuum container of the said CVD system is separated into a plasma generating space and a film forming space by a conductive partition...
6534380 Semiconductor substrate and method of manufacturing the same  
Before a semiconductor substrate and a base substrate is directly bonded to one another, in a protective film removing step, a contamination protective film formed on the semiconductor substrate to...
6521545 Method of a surface treatment on a fluorinated silicate glass film  
The invention shows a method of a surface treatment on a fluorine silicate glass film. At first a fluorine silicate glass layer is deposited on a semiconductor wafer. Partial fluorine ions in the...
6521496 Non-volatile memory semiconductor device including a graded, grown, high quality control gate oxide layer and associated methods  
A memory cell of a non-volatile memory includes a control gate oxide layer having graded portions with greatly reduced stress on a polysilicon floating gate layer. The method of making the control...
6514825 Technique for reducing 1/f noise in MOSFETs  
An improved gate structure for a MOSFET device exhibits a reduced level of 1/f noise or “flicker noise”, while maintaining the control of boron penetration into the substrate of the MOSFET...
6514843 Method of enhanced oxidation of MOS transistor gate corners  
A method of enhancing the rate of transistor gate corner oxidation, without significantly increasing the thermal budget of the overall processing scheme is provided. Specifically, the method of the...
6511921 Methods for reducing the reactivity of a semiconductor substrate surface and for evaluating electrical properties of a semiconductor substrate  
A process for effectively reducing reactivity of a surface of a semiconductor substrate is described. The process includes: (1) oxidizing in an oxidizing environment the semiconductor substrate...
6509283 Thermal oxidation method utilizing atomic oxygen to reduce dangling bonds in silicon dioxide grown on silicon  
Atomic oxygen, or a mixture of atomic oxygen and atomic nitrogen, is utilized in thermally oxidizing silicon to form a layer of silicon dioxide, or nitrogen-doped silicon dioxide, on a surface of...
RE37960 Method for forming an oxynitride film in a semiconductor device  
A method for forming an oxide film in a semiconductor device comprises a pre-oxidation process, a main oxidation process and a post-oxidation process. N 2 O gas is used for the pre-oxidation...
6488038 Method for cleaning semiconductor substrates  
A method and apparatus for cleaning organic material from a semiconductor substrate suppresses the oxidation of a conductive film or layer on the substrate. A semiconductor substrate is immersed...
6486076 Thin film deposition apparatus  
To suppress the deposition of thin films on exposed positions inside the process chamber and facilitate the selective deposition of good quality thin films with high productivity, disilane gas is...
6482754 Method of forming a carbon doped oxide layer on a substrate  
A method of forming a carbon doped oxide layer on a substrate is described. That method comprises introducing into a chemical vapor deposition apparatus a precursor gas that is selected from those...
6475862 Semiconductor device having gate insulating layers different in thickness and material and process for fabrication thereof  
Field effect transistors of an integrated circuit are fabricated on a silicon substrate, and require gate insulating layers appropriate for the purpose of individual component circuits, the active...
6468926 Manufacture method and system for semiconductor device with thin gate insulating film of oxynitride  
A manufacture method for a semiconductor device includes the steps of: (a) transporting a silicon wafer into a reaction chamber having first and second gas introducing inlet ports; (b) introducing...
6461919 Method for fabricating semiconductor device with different gate oxide compositions  
First, an isolation region is formed on a surface portion of a semiconductor substrate of silicon, thereby defining first and second regions, which are isolated from each other by the isolation...
6458714 Method of selective oxidation in semiconductor manufacture  
Disclosed is a method of selective oxidation of components of a semiconductor transistor containing silicon in the presence of high conductivity metal or metal alloys. A high temperature annealing...
6458639 MOS transistor with stepped gate insulator  
A field effect transistor (FET) is formed on a silicon substrate, with a nitride gate insulator layer being deposited on the substrate and an oxide gate insulator layer being deposited on the...
6455440 Method for preventing polysilicon stringer in memory device  
In accordance with the present invention, a method for preventing polysilicon stringers in memory devices is disclosed. The key aspect of the present invention is the formation of a floating gate...
6451713 UV pretreatment process for ultra-thin oxynitride formation  
The oxynitride or oxide layer formed on a semiconductor substrate is pre-treated with UV-excited gas (such as chlorine or nitrogen) to improve the layer surface condition and increase the density...
6451660 Method of forming bipolar transistors comprising a native oxide layer formed on a substrate by rinsing the substrate in ozonated water  
A bipolar device ( 10 ) includes an oxide layer ( 24 ) which is grown on the surface ( 16 ) of a semiconductor substrate ( 12 ) by immersing the surface in ozonated deionized water. By selecting an...
6448192 Method for forming a high dielectric constant material  
Highe quality silicon oxide having a plurality of monolayers is grown at a high temperature on a silicon substrate. A monolayer of silicon oxide is a single layer of silicon atoms and two oxygen...
6448178 Heat treating method for thin film and forming method for thin film  
A heat treatment method for heat treating a thin film is a method for heat treating the thin film having a metallic silicide layer, comprising a heating step, a temperature keeping step and a...
6444592 Interfacial oxidation process for high-k gate dielectric process integration  
A method for integrating a high-k material into CMOS processing schemes is provided. The method includes forming an interfacial oxide, oxynitride and/or nitride layer on a device region of a...
6436848 Method for forming nitrogen-rich silicon oxide-based dielectric materials  
A nitrogen-rich silicon oxide layer is formed using an apparatus for oxidizing semiconductor substrates having a process zone or chamber fluidically coupled to a torch zone or chamber. Generally, a...
6436846 Combined preanneal/oxidation step using rapid thermal processing  
A combined preanneal/oxidation step using a rapid thermal process (RTP) for treatment of a silicon wafer to form a thermal oxide of a given thickness while simultaneously adjusting the denuded zone...
6432317 Method to produce masking  
This is a method for masking a structure 12 for patterning micron and submicron features, the method comprises: forming at least one monolayer 32 of adsorbed molecules on the structure;...
6429040 Device comprising a bipolar semi-conducting film  
An organic semiconducting material having bi-polar charge transport characteristics is described which may comprise the active layer of a field-effect transistor. The semiconducting material...
6426271 Method of rounding the corner of a shallow trench isolation region  
The present invention provides a method of rounding the corner of the shallow trench isolation region, comprising the steps of: etching silicon substrate using a patterned mask layer and a pad...
6423648 Controllable oxidation technique for the formation of high-quality ultra-thin gate oxide using carbon dioxide as the oxidizing agent  
A method of forming an ultra-thin gate oxide ( 14 ) for a field effect transistor ( 10 ). The gate oxide ( 14 ) is formed by combining an oxidizing agent (e.g., N 2 O, CO 2 ) with an etching agent...
6423647 Formation of dielectric regions of different thicknesses at selective location areas during laser thermal processes  
For fabricating regions of dielectric material on a semiconductor substrate, a first layer of metal is deposited on the semiconductor substrate, and a first opening is etched through the first...
6423649 Method and apparatus for stabilizing high pressure oxidation of a semiconductor device  
A method and apparatus for preventing N 2 O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus...
Matches 251 - 300 out of 559 < 1 2 3 4 5 6 7 8 9 10 11 12 >