Matches 1 - 38 out of 38
Match Document Document Title
7374960 Stress measurement and stress balance in films  
Methods and systems are provided of fabricating a compound nitride semiconductor structure. A substrate is disposed within a processing chamber into which a group-III precursor and a nitrogen...
7345297 Nitride semiconductor device  
A semiconductor device includes an active layer, an n-side contact layer, and a p-side contact layer. The nitride semiconductor device includes at least a first n-side layer, a second n-side layer,...
7297569 Semiconductor devices with reduced active region defects and unique contacting schemes  
A method of making a semiconductor device having a predetermined epitaxial region, such as an active region, with reduced defect density includes the steps of: (a) forming a dielectric cladding...
7279698 System and method for an optical modulator having a quantum well  
The optical modulator may include a strained layer of SiGe to confine carriers in a quantum well. The strained layer of SiGe may be doped with arsenic to provide electrons. The optical modulator...
7208133 Method for the preparation of IV-VI semiconductor nanoparticles  
A high temperature non-aqueous synthetic procedure for the preparation of substantially monodisperse IV-VI semiconductor nanoparticles is provided. The procedure includes introducing a first...
7008814 Method and apparatus for increasing digital color imaging utilizing tandem RGB photodiodes  
An apparatus is directed to increasing the resolution of digital color imaging that includes a photosensing semiconductor structure. The apparatus provides a monocrystalline silicon substrate, a...
6967345 Dual band QWIP focal plane array  
A quantum well infrared photodetector (QWIP) that provides two-color image sensing. Two different quantum wells are configured to absorb two different wavelengths. The QWIPs are arrayed in a focal...
6967119 Semiconductor laser device and method of fabricating the same  
There is provided a semiconductor laser device having on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, the plurality of laser portions...
6958257 Tantalum sputtering target and method of manufacture  
Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials...
6955938 Tantalum sputtering target and method of manufacture  
Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials...
6902945 Tapered threshold reset FET for CMOS imagers  
A sensor may be formed with a transistor comprising a gate that has both n-type and p-type regions to increase the gate work function. In combination with moving the p-type well such that the...
6784074 Defect-free semiconductor templates for epitaxial growth and method of making same  
A method for fabrication of defect-free epitaxial layers on top of a surface of a first defect-containing solid state material includes the steps of selective deposition of a second material,...
6781211 Photodiode having an active region shaped in a convex lens  
Disclosed is a photodiode with improved light-receiving efficiency and coupling effect with an optical fiber, whose capacitance may be decreased. The inventive photodiode includes a substrate; a...
6734452 Infrared radiation-detecting device  
An Al x Ga 1−x As/GaAs/Al x Ga 1−x As quantum well exhibiting a bound-to-quasibound intersubband absorptive transition is described. The bound-to-quasibound transition exists when the first...
6724059 Magnetoelectric transducer and method for producing the same  
The present invention provides a thin magnetoelectric transducer which has a projected size substantially equal to that of a pellet and which can be subjected to an inspection test...
6709903 Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing  
A method to obtain thin (<300 nm) strain-relaxed Si 1−x Ge x buffer layers on Si or silicon-on-insulator (SOI) substrates. These buffer layers have a homogeneous distribution of misfit...
6653701 Semiconductor device and production method thereof  
A semiconductor device having laminated successively a porous semiconductor layer, an inorganic semiconductor layer, and optionally an organic substance layer formed therebetween is disclosed. The...
6653166 Semiconductor device and method of making same  
The method produces coherent dislocation-free regions from initially dislocated and/or defect-rich lattice mismatched layer grown on top of the substrate having a different lattice constant, which...
6635505 Method of manufacturing an active matrix type semiconductor display device  
There is provided an active matrix type semiconductor display device which realizes low power consumption and high reliability. In the active matrix type semiconductor display device of the present...
6566161 Tantalum sputtering target and method of manufacture  
Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials...
6559058 Method of fabricating three-dimensional components using endpoint detection  
One embodiment of the present invention provides a system for using selective etching to form three-dimensional components on a substrate. The system operates by receiving a substrate composed of a...
6492193 Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure  
An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer...
6431455 Contactless data carrier  
A data carrier for noncontacting control of persons with nontransferable entitlement to utilize a service is integrated into a bracelet ( 1 ) so as to be useless after the bracelet ( 1 ) is opened.
6380601 Multilayer semiconductor structure with phosphide-passivated germanium substrate  
A multilayer semiconductor structure includes a germanium substrate having a first surface. The germanium substrate has two regions, a bulk p-type germanium region, and a phosphorus-doped n-type...
6380005 Charge transfer device and method for manufacturing the same  
In a charge transfer device of the two-layer electrode, two-phase drive type, an N −− semiconductor region 108 and a first insulator film 103 are formed on a P-type semiconductor substrate...
6355511 Method of providing a frontside contact to substrate of SOI device  
A method for making frontside contact to a substrate through an SOI structure thereon is provided. An etching step is undertaken to form a trench in the SOI structure so as to expose and define a...
6323055 Tantalum sputtering target and method of manufacture  
Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials...
6239354 Electrical isolation of component cells in monolithically interconnected modules  
A monolithically interconnected photovoltaic module having cells which are electrically connected which comprises a substrate, a plurality of cells formed over the substrate, each cell including a...
6211529 Infrared radiation-detecting device  
An Al x Ga 1 -x As/GaAs/Al x Ga 1 -x As quantum well exhibiting a bound-to-quasibound intersubband absorptive transition is described. The bound-to-quasibound transition exists when the first...
5906708 Silicon-germanium-carbon compositions in selective etch processes  
Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for...
5877520 Trench lateral overflow drain antiblooming structure for virtual phase charge coupled devices with virtual gate element  
The lateral overflow drain for charge coupled devices includes: a semiconductor region 70 of a first conductivity type having a trench 92; a drain region 24 of a second conductivity type below the...
5130259 Infrared staring imaging array and method of manufacture  
Monolithic InSb array devices are described for staring infrared imaging systems operating in the 3-5 μm spectral region. These devices are fabricated with only 4 mask levels compared to 5 mask...
4749659 Method of manufacturing an infrared-sensitive charge coupled device  
A charge coupled device (CCD) sensitive to infrared radiation composed of a succession of three layers of Group III-V semiconductor material. The layers are a window layer, a sensitive layer and a...
4559695 Method of manufacturing an infrared radiation imaging device  
An array of photovoltaic infrared radiation detector elements are formed in a body of infrared sensitive material, e.g. of cadmium mercury telluride. The body is present on a circuit substrate,...
4377904 Method of fabricating a narrow band-gap semiconductor CCD imaging device  
A monolithic charge-coupled infrared imaging device (CCIRID) is fabricated on N-type HgCdTe. A native oxide layer on the semiconductor is used, in combination with ZnS to provide first level...
4273596 Method of preparing a monolithic intrinsic infrared focal plane charge coupled device imager  
An infrared (IR) detector device comprised of a solid state, radiation ha and high resolution monolithic IR focal plane array for imaging applications. The monolithic IR focal plane array has a...
4231149 Narrow band-gap semiconductor CCD imaging device and method of fabrication  
A monolithic charge-coupled infrared imaging device (CCIRID) is fabricated on N-type HgCdTe. A native oxide layer on the semiconductor is used, in combination with ZnS to provide first level...
4228365 Monolithic infrared focal plane charge coupled device imager  
An infrared (IR) detector device comprised of a solid state, radiation ha and high resolution monolithic IR focal plane array for imaging applications. The monolithic IR focal plane array has a...
Matches 1 - 38 out of 38